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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

First-principles theory of direct-gap optical emission in hexagonal Ge and its enhancement via strain engineering

The emergence of hexagonal Ge (2H-Ge) as a candidate direct-gap group-IV semiconductor for Si photonics mandates a rigorous understanding of its optoelectronic properties. Theoretical predictions of a “pseudodirect” band gap, characterized by weak oscillator strength, contrast with a claimed high radiative recombination coefficient 𝐵 comparable to conventional (cubic) InAs. We compute 𝐵 in 2H-Ge from first principles and quantify its dependence on temperature, carrier density, and strain. For unstrained 2H-Ge, our calculated spontaneous emission spectra corroborate that measured photoluminescence corresponds to direct-gap emission, but with 𝐵 being approximately three orders of magnitude lower than in InAs. We confirm a pseudodirect-to-direct-gap transition under ∼2% [0001] uniaxial tension, which can enhance 𝐵 by up to 3 orders of magnitude, making it comparable to that of InAs. Beyond quantifying the strong enhancement of 𝐵 via strain engineering, our analysis suggests the dominance of additional, as-yet unquantified recombination mechanisms in this nascent material.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Collinear antiferromagnetic order in a quasi-two-dimensional triangular lattice compound DyNiAl 4 Ge 2

The two-dimensional magnetic triangular lattice, with rare-earth local moments coupled through long-range interactions and hosting strong spin-orbit coupling, serves as an ideal platform for exploring novel quantum phenomena. Here, we report the physical properties of DyNiAl 4 Ge 2 single crystals through comprehensive structural, magnetic, heat capacity, electrical transport, and neutron powder diffraction measurements. DyNiAl 4 Ge 2 crystallizes in a trigonal lattice with the space group $R\bar{3}m$, where Dy atoms form two-dimensional triangular lattice layers within the 𝑎𝑏 plane and stack along the 𝑐 axis. Magnetic susceptibility measurement reveals a magnetic phase transition at 𝑇 𝑁 = 9.0 K, further confirmed by the 𝜆-shaped peak in the heat capacity curve. The obtained temperature-magnetic field phase diagram is relatively simple compared to other isostructural compounds, suggesting the absence of magnetic frustration. This is further evidenced by neutron powder diffraction, which shows a collinear antiferromagnetic ground state with a propagation vector 𝒌 = (0, 0, 1.5), implying the absence of magnetic frustration in DyNiAl 4 Ge 2 . In this magnetic structure, Dy moments are aligned ferromagnetically within each triangular layer and arranged antiferromagnetically between adjacent layers along the 𝑐 axis. In conclusion, our results establish DyNiAl 4 Ge 2 as a model system for understanding the interplay between RKKY interaction and geometrical frustration in this family of compounds.

Wu, HengHeng [Chinese Academy of Sciences (CAS), S↗
DOE OSTI2020

Itinerant ferromagnetism in van der Waals Fe 5 – x Ge Te 2 crystals above room temperature

Two-dimensional (2D) van der Waals (vdW) magnets have recently attracted increasing attention, as they provide a novel system for exploring 2D magnetism. However, intrinsic ferromagnetism in 2D systems has almost exclusively been observed at low temperatures, limiting their technological relevance. Fe N Ge Te 2 ( N = 3 , 4, and 5) systems are currently becoming the most attractive 2D vdW materials due to their relatively high Curie temperatures and large saturation magnetization. However, the nature of their complex yet intriguing magnetic behaviors is still unclear, in part due to the multiple inequivalent iron sites and iron vacancies. In this study, we show evolution of magnetic ordering transitions in Fe 5 – x Ge Te 2 with high Curie temperature and a strong saturation magnetization using photoemission electron microscopy and transport measurements. At 275 K, the ferromagnet transitions to a ferrimagnet, and below 110 K transitions to a state with glassy clusters. These are evidenced from temperature-dependent magnetic stripe domain evolution and anisotropic magnetoresistance measurements. Our findings show a clear magnetic ground state of Fe 5 – x Ge Te 2 at room temperature which signals that Fe 5 – x Ge Te 2 system is a very promising candidate for spintronic devices and provides a material design pathway to further increase the Curie temperature and saturation moments in vdW ferromagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Avoided ferromagnetic quantum critical point in pressurized La 5 Co 2 Ge 3

We present the pressure-temperature phase diagram La 5 Co 2 Ge 3 up to ~ 5 GPa, which was constructed from magnetization, resistivity, and specific heat measurements. At ambient pressure, La 5 Co 2 Ge 3 is an itinerant ferromagnet with a Curie temperature T C ~ 4 K. Upon increasing pressure up to ~ 1.7 GPa, T C is suppressed down to ~ 3 K. Upon further increasing pressure, our results suggest that La 5 Co 2 Ge 3 enters a different low-temperature ground state. The corresponding transition temperature T* has a nonmonotonic pressure dependence up to ~ 5 GPa. Our results demonstrate that the ferromagnetic quantum critical point in La 5 Co 2 Ge 3 is avoided by the appearance of a different, likely magnetically ordered, state that has an antiferromagnetic component.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strong magnetoelastic coupling in Mn 3 X ( X = Ge , Sn)

Here we measure the full elastic tensors of Mn 3 Ge and Mn 3 Sn as a function of temperature through their respective antiferromagnetic phase transitions. Large discontinuities in the bulk moduli at the Néel transitions indicate strong magnetoelastic coupling in both compounds. Strikingly, the discontinuities are nearly a factor of 10 larger in Mn 3 Ge than in Mn 3 Sn. We use the magnitudes of the discontinuities to calculate the pressure derivatives of the Néel temperature, which are 39 K/GPa 14.3 K/GPa for Mn 3 Ge and Mn 3 Sn, respectively. We measured the in-plane shear modulus c 66 , which couples strongly to the magnetic order, in magnetic fields up to 18 T and found quantitatively similar behavior in both compounds. Recent measurements have demonstrated strong piezomagnetism in Mn 3 Sn : Our results suggest that Mn 3 Ge may be an even better candidate for this effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl 4 Ge 2

Magnetic frustration in metallic rare- earth lanthanides (Ln) with 4f electrons is crucial for producing interesting magnetic phases with high magnetic anisotropy where intertwined charge and spin degrees of freedom lead to novel phenomena. Here we report on the magnetic, thermodynamic, and electrical transport properties of TbAuAl 4 Ge 2 . Tb ions form two-dimensional triangular lattice layers which stack along the crystalline c axis. The magnetic phase diagram reveals multiple nearly degenerate ordered states upon applying field along the magnetically easy ab-plane before saturation. The magnetoresistance in this configuration exhibits intricate field dependence that closely follows that of the magnetization while the specific heat reveals a region of highly enhanced entropy, suggesting the possibility of a nontrivial spin textured phase. For fields applied along the c axis (hard axis), we find linear magnetoresistance over a wide range of fields. Further, we compare the magnetic properties and magnetoresistance with an isostructural GdAuAl 4 Ge 2 single crystal. These results identify TbAuAl 4 Ge 2 as an environment for complex quantum spin states and pave the way for further investigations of the broader LnAuAl 4 Ge 2 family of materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re 3 Ge 7

The effect of pressure on the low-temperature states of the Re 3 ⁡Ge 7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re 3 ⁡Ge 7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T 1 =59.4K and T 2 =58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering. Upon applying pressure, the two-step (T 1 ,T 2 ) MIT splits into three steps (T 1 ,T 2 . and T 3 ) above 1 GPa, and all traces of MITs are fully suppressed by ~8 GPa. Subsequently, the onset of bulk superconductivity (SC) occurs between 10.8 and 12.2 GPa and persists to our highest pressure of 26.8 GPa. At 12.2 GPa the superconducting transition temperature, T c , and upper critical field, H c ⁢2 reach the maximum of T c (onset) ~5.9 K and H c ⁢2 (1.8 K) ~14 kOe. Finally, our results not only present the observation of SC under high pressure in Re 3 ⁡Ge 7 but also delineate the interplay between SC and other competing electronic states by creating a T-p phase diagram for this potentially topologically nontrivial system Re 3 ⁡Ge 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Multiple magnetic interactions and large inverse magnetocaloric effect in TbSi and TbSi 0.6 Ge 0.4

We present a comprehensive investigation of the electronic structure, magnetization, specific heat, and crystallography of TbSi (FeB structure type) and TbSi 0.6 ⁢Ge 0.4 (CrB structure type) compounds. Both TbSi and TbSi 0.6 ⁢Ge 0.4 exhibit two antiferromagnetic (AFM) transitions at T N⁢1 ≈ 58 and 57 K, and T N⁢2 ≈ 36 and 44 K, respectively, along with an onset of weak metamagneticlike transition around 6 T between T N⁢1 and T N⁢2 . High-resolution specific heat (C P ) measurements show the second- and first-order nature of the magnetic transition at T N⁢1 and T N⁢2 , respectively, for both samples. However, in the case of TbSi, the low-temperature (LT) AFM to high-temperature (HT) AFM transition takes place via an additional AFM phase at the intermediate temperature (IT), where both LT to IT AFM and IT to HT AFM phase transitions exhibit a first-order nature. Both TbSi and TbSi 0.6 ⁢Ge 0.4 manifest significant magnetic entropy changes (Δ⁢S M ) of 9.6 and 11.6 J/kg-K, respectively, for Δ⁢μ 0 ⁢H=7 T, at T N⁢2 . The HT AFM phase of TbSi 0.6 ⁢Ge 0.4 is found to be more susceptible to the external magnetic field, causing a significant broadening in the peaks of Δ⁢S M curves at higher magnetic fields. Temperature- and field-dependent specific-heat data have been utilized to construct the complex HT phase diagram of these compounds. As a result, temperature-dependent x-ray diffraction measurements demonstrate substantial magnetostriction and anisotropic thermal expansion of the unit cell in both samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Search for double-β decay of 76 Ge to excited states of 76 Se with the Majorana Demonstrator

The M AJORANA DEMONSTRATOR is a neutrinoless double-β decay search consisting of a low-background modular array of high-purity germanium detectors, ~2/3 of which are enriched to 88% in 76 Ge. The experiment is also searching for double-beta decay of 76 Ge to excited states (e.s.) in 76 Se. 76 Ge can decay into three daughter states of 76 Se, with clear event signatures consisting of a ββ-decay followed by the prompt emission of one or two γ rays. This results with high probability in multi-detector coincidences. In this work, the granularity of the DEMONSTRATOR detector array enables powerful discrimination of this event signature from backgrounds. Using 41.9 kg yr of isotopic exposure, the DEMONSTRATOR has set world leading limits for each e.s. decay of 76 Ge, with 90% CL lower half-life limits in the range of (0.75–4.0) × 10 24 yr. In particular, for the 2ν transition to the first 0 + e.s. of 76 Se, a lower half-life limit of 7.5 × 10 23 yr at 90% CL was achieved.

59 ≤ A ≤ 89↗
DOE OSTI2023

Triaxiality and the nature of low-energy excitations in Ge 76

The deformation properties of the low-lying states in 76 Ge have been investigated following a safe energy Coulomb excitation measurement with the GRETINA tracking array and CHICO2 heavy-ion counter at the ATLAS accelerator facility at Argonne National Laboratory. A comprehensive set of transition and static E2 matrix elements were extracted from the measured differential Coulomb cross-sections, and compared with results of configuration interaction shell-model calculations and computations carried out within the framework of the generalized triaxial rotor model. The remarkable agreement between the calculated and experimental data supports a near-maximum triaxial deformation for the ground state of 76 Ge. Additionally, the degree of softness of the asymmetry in 76 Ge and 76 Se was investigated using rotational invariants generated from configuration interaction shell-model wave functions computed with the jj44b and JUN45 effective interactions. The resulting invariants are shown to be consistent with a stiff triaxial deformation in 76 Ge and a predominantly soft triaxial potential for 76 Se, in agreement with the conclusions of recent works by this collaboration.

59 ≤ A ≤ 89↗
DOE OSTI2024

Half-life of Ge 71 and the gallium anomaly

Recent discussions about the origin of the so-called gallium anomaly have motivated a remeasurement of the half-life of 71 Ge. Here, we have conducted three separate measurements using dedicated planar Ge detectors—one with 55 Fe as a standard, one with 57 Co as a standard, and one standalone 71 Ge measurement. Our results yield a half-life of 11.468±0.008 days, which is consistent with, but significantly more precise than, the currently accepted value. With this experiment, the potential explanation of the gallium anomaly being due to an unexpectedly long 71 Ge half-life has been ruled out, leaving the anomaly's origin as an open question.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Absence of Low-Energy Shape Coexistence in 80 Ge: The Nonobservation of a Proposed Excited 0 2 + Level at 639 keV

The 80 Ge structure was investigated in a high-statistics β-decay experiment of 80 Ga using the GRIFFIN spectrometer at TRIUMF-ISAC through γ, β-e, e-γ and γ-γ spectroscopy. No evidence was found for the recently reported 0 2 + 639-keV level suggested as evidence for low-energy shape coexistence in 80Ge. Large-scale shell model calculations performed in 78,80,82 Ge place the 0 2 + level in 80 Ge at 2 MeV. The new experimental evidence combined with shell model predictions indicate that low-energy shape coexistence is not present in 80 Ge.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Performance of III–V Solar Cells Grown on Reformed Mesoporous Ge Templates

We demonstrate a solar cell on reformed porous Ge with an efficiency of 7.7%. We generate mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high temperature. The pores coalesce deep in the structure rather than at the surface as desired, although resulting in coarse superficial morphology unsuitable for device growth. To combat this issue, we developed a surface treatment involving an HBr dip, annealing at 415 degrees C, and a postannealing ultrasonic De-ionized water dip to improve the surface structure, resulting in a smoother reformed surface on which we grow a GaInAs solar cell. The structure retains embedded pores after growth and the transitions between Ge and III-V layers are distinct. The solar cell fabricated using the improved coalescence has an efficiency of 4.5%. The efficiency improves to 7.7% by isolating the rest of the device from three limiting localized shunt areas. Protruding defects in the porous Ge and III-V layers still limit the performance, but this work establishes a step toward the technical viability of this exfoliation approach, showing decent efficiency if protruding defects can be removed or reduced.

14 SOLAR ENERGY↗
DOE OSTI2024

Magneto-transport study on Sn-rich Sn 1–x Ge x thin films enabled by CdTe buffer layer

α-Sn, generally known as gray tin, has attracted significant scientific interest due to its potential to host novel topological phases. Studying the transport properties of α-Sn thin films grown on the InSb substrate has been challenging, as the InSb substrate also significantly contributes to the transport properties. In this article, we report a novel approach to epitaxially grow α-Sn thin films on an InSb substrate with a resistive buffer layer of CdTe. Thin films of α–Sn 1–x Ge x (x = 0, 0.025) alloy of 15 nm thickness have been grown using molecular beam epitaxy. The high quality of the samples has been determined through high-resolution x-ray diffraction. The CdTe buffer layer has high resistance and acts as an insulating virtual substrate, which significantly suppresses contribution from InSb. Magnetotransport measurements show clear Shubnikov–de Hass oscillations in α–Sn 1–x Ge x (x = 0, 0.025) thin films. A change in oscillation frequency is observed upon alloying with Ge, implying a modification in the electronic structure and demonstrating the effectiveness of the CdTe buffer layer approach. Furthermore, this work provides a new approach that enables the electronic transport characterization of the α–Sn 1–x Ge x alloy system, which enables the study of the topological quantum states using electronic transport and their device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Role of Oxygen on Chemical Segregation in Uncapped Ge 2 Sb 2 Te 5 Thin Films on Silicon Nitride

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this paper, the segregation of Ge in a Ge 2 Sb 2 Te 5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. Furthermore, Ge 2 Sb 2 Te 5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O island boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and can significantly impact its electrical and thermal properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1979

Nebular condensation of Ga, Ge and Sb and the chemical classification of iron meteorites

The quantization of the Ga and Ge contents in iron meteorites, which is used as a key parameter in the chemical classification of iron meteorites, is discussed in terms of nebular condensation. The calculation of nebular equilibrium condensation is examined, taking into account the dependence of the activity coefficient on temperature and composition, and recent calculations of the condensation temperatures of Ga, Ge, Sb, Au, As and Cu are presented, noting that Ge is the most volatile siderophile, followed by Ga and Sb. The narrow intragroup ranges of Ga and Ge are interpreted in terms of minimal fractionation during core crystallization, while the larger ranges of Sb are attributed to its significantly smaller solid/liquid distribution coefficient in IIIAB meteorites.

Wai, C. M.↗
NASA NTRS1990

Si-Ge-metal ternary phase diagram calculations

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Fleurial, J. P.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗