Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GaN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the < 11$ \overline{20}\ $ > and < 110 > directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ~29% at room temperature along with intrinsic and extrinsic defect energy levels of ~124 and ~344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Altogether, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.

42 ENGINEERING↗
DOE OSTI2016

Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 °C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt{sub 3} and N{sub 2}/H{sub 2} plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm{sup 3} for GaN grown on Si (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2–3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9–10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

GaN Initiative for Grid Applications (GIGA)

For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Adroit Materials Final Scientific/Technical Report kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

The primary aim of this research was to develop GaN-based Junction Barrier Schottky (JBS) diodes using an innovative ion implantation process previously established in ARPA-E funded projects. The central focus of our proposed technology revolves around selective area p-type doping, accomplished through the implantation of Mg ions. This approach builds upon our successes in the ARPA-E PNDIODES program, advancing towards commercial device integration. Selective area p-doping plays a pivotal role in realizing the next generation of GaN-based power devices, capable of significantly reducing the carbon footprint in the United States by several million tons. While ion implantation is a well-established technique for achieving selective area doping in SiC and Si materials, its feasibility in GaN had not been demonstrated until now. To fabricate high voltage GaN JBS diodes, we initially created thick n-type drift layers with high carrier concentrations ranging from 5×1015 cm-3 to 2×1016 cm-3 and very high mobilities. Subsequently, Mg ions were selectively implanted to form p-type islands within the n-type drift layer. To reduce electric field crowding at the edge of the diode and to achieve high breakdown voltage, junction edge termination (JTE) and floating field rings (FFRs) were formed using Mg implantation. A high temperature, high-pressure post-implantation annealing process was carried out to activate the implanted Mg ions. As a result, we were able to demonstrate GaN JBS diodes with a breakdown voltage of 915 V and an on-resistance of 0.6 mΩ·cm2. These diodes exhibited a forward bias current density of 1 kA/cm2 at 1.5 V. Subsequently, we achieved GaN JBS diodes with a remarkable breakdown voltage of 1900 V and an on-resistance of 1.9 mΩ·cm2, capable of sustaining a forward bias current density of 0.5 kA/cm2 at 1.5 V. Importantly, the ON and OFF state performance of these GaN JBS diodes surpassed that of Si and SiC-based power diodes reported in existing literature. Lastly, we successfully grew 60 μm thick GaN:Si layers using HVPE with a carrier concentration of approximately 3 to 5×1015 cm-3. Based on simulation and empirical data these devices represent 5 kV GaN JBS power diodes, leveraging the developed processes in this project.

36 MATERIALS SCIENCE↗
DOE OSTI2023

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high-power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional-MOCVD (C-MOCVD) and laser-assisted MOCVD (LA-MOCVD) is compared and analyzed. C-incorporation effects are compared through quantitative secondary-ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m-plane over a wide range of growth rates by C-MOCVD and LA-MOCVD. For both growth techniques investigated, a significant reduction in C-incorporation is observed when a high-offcut-angle (4°) substrate is used as compared to a lower-offcut-angle (0.3°) substrate. Furthermore, with C-MOCVD, at the fastest growth condition investigated (17.26 μm h −1 at 0.3°-offcut, 15.25 μm h −1 at 4°-offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA-MOCVD on GaN with 4° offcut angle (9.78 μm h −1 ) as compared to C-MOCVD at 0.3° offcut angle (17.26 μm h −1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Electronic and Optical Properties of Two-Dimensional GaN from First-Principles

Gallium nitride (GaN) is a vital commercial semiconductor for solid-state lighting applications. Atomically thin GaN, a recently synthesized two-dimensional material, is of particular interest because the extreme quantum confinement enables additional control of its light-emitting properties. We performed first-principles calculations based on density functional and many-body perturbation theory to investigate the electronic, optical, and excitonic properties of monolayer and bilayer two-dimensional (2D) GaN as a function of strain. These findings demonstrate that light emission from monolayer 2D GaN is blueshifted into the deep ultraviolet range, which is promising for sterilization and water-purification applications. Light emission from bilayer 2D GaN occurs at a similar wavelength to its bulk counterpart due to the cancellation of the effect of quantum confinement on the optical gap by the quantum-confined Stark shift. Polarized light emission at room temperature is possible via uniaxial in-plane strain, which is desirable for energy-efficient display applications. We compare the electronic and optical properties of freestanding two-dimensional GaN to atomically thin GaN wells embedded within AlN barriers in order to understand how the functional properties are influenced by the presence of barriers. Our results offer microscopic understanding of the electronic and optical characteristics of GaN at the few-layer regime.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Abstract GaN‐based vertical transistors have demonstrated its excellent properties for high‐power and high‐frequency electronic devices. This work introduces a GaN‐based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p ‐type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub‐micrometer fin width involves photoresist (PR)‐assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device's triode‐like output characteristics with high current density (0.65 kA cm −2 ) and low ON resistance (1.48 mΩ cm 2 ) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub‐micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next‐generation high‐power and high‐frequency electronics.

Chun, Jaeyi↗
DOE OSTI2014

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural effects of field emission from GaN nanofilms on SiC substrates

GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High optical and structural quality of GaN epilayers grown on (2{sup ¯}01) β-Ga{sub 2}O{sub 3}

Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2{sup ¯}01) oriented β-Ga{sub 2}O{sub 3} are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼10{sup 8 }cm{sup −2}. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2{sup ¯}01) β-Ga{sub 2}O{sub 3} with in-plane epitaxial orientation relationships between the β-Ga{sub 2}O{sub 3} and the GaN thin film defined by (010) β-Ga{sub 2}O{sub 3} || (112{sup ¯}0) GaN and (2{sup ¯}01) β-Ga{sub 2}O{sub 3} || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ultrafast carrier dynamics in GaN nanorods

We present ultrafast time-resolved optical spectroscopy on GaN nanorods at room temperature. The studied GaN nanorods, with diameters of ∼50 nm and lengths of ∼400 nm, were grown on the silicon substrate. After femtosecond optical pulses excited carriers in the GaN nanorods, the carriers thermalized within a few picoseconds. Subsequently, the electrons are trapped by the surface states on the order of 20 ps. After the surface electric field was reformed in the GaN nanorods, we found the lifetime of the residue carriers in GaN nanorods is longer than 1.7 ns at room temperature, while the lifetime of carriers in GaN thin film is typically a few hundred picoseconds. Our findings indicate that GaN nanorods have higher electrical quality compared with GaN thin film.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers

Er-doped GaN (Er:GaN) is a promising candidate as a gain medium for solid-state high energy lasers (HELs) at the technologically important and eye-safe 1.54 μm wavelength window, as GaN has superior thermal properties over traditional laser gain materials such as Nd:YAG. However, the attainment of wafer-scale Er:GaN bulk or quasi-bulk crystals is a prerequisite to realize the full potential of Er:GaN as a gain medium for HELs. We report the realization of freestanding Er:GaN wafers of 2-in. in diameter with a thickness on the millimeter scale. These freestanding wafers were obtained via growth by hydride vapor phase epitaxy in conjunction with a laser-lift-off process. An Er doping level of 1.4 × 10{sup 20} atoms/cm{sup 3} has been confirmed by secondary ion mass spectrometry measurements. The freestanding Er:GaN wafers exhibit strong photoluminescent emission at 1.54 μm with its emission intensity increasing dramatically with wafer thickness under 980 nm resonant excitation. A low thermal quenching of 10% was measured for the 1.54 μm emission intensity between 10 K and 300 K. This work represents a significant step in providing a practical approach for producing Er:GaN materials with sufficient thicknesses and dimensions to enable the design of gain media in various geometries, allowing for the production of HELs with improved lasing efficiency, atmosphere transmission, and eye-safety.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
DOE OSTI2015

High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

36 MATERIALS SCIENCE↗