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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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122 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Unravelling chemical pathways of H 2 on Ga 2 O 3 surfaces with spectro-electrochemistry

This work highlights the capability of coupled spectroscopic and electrochemical techniques to probe dynamic surface processes under realistic operating conditions. By simultaneously employing in situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) and electrochemical impedance spectroscopy (EIS), we elucidate the mechanistic interaction between Ga 2 O 3 and hydrogen under elevated temperatures in a low-oxygen environment. This novel spectro-electrochemical approach allows chemistry to be correlated with the surface charge density of Ga 2 O 3 . Our results reveal a concentration-dependent transition in reaction pathway. At low concentrations, hydrogen reacts with ambient oxygen to form surface hydroxyls. At intermediate concentrations, hydrogen interacts with surface adsorbed oxygen to generate hydroxyl groups along with reducing the surface. Finally, at high H 2 concentrations, hydrogen reduces both hydroxyls and surface oxygen, leading to a highly conductive grain surface. As a result, hydrides form on the reduced Ga 2 O 3 surface. The gained insights are relevant for heterogeneous catalysis and gas sensing.

08 HYDROGEN↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Mg:Ga 2 O 3 via Three-Step Synthesis Process

Gallium oxide (Ga 2 O 3 ) is being actively explored for electronics that can operate at high power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other applications due to its ultra-wide bandgap (UWBG) and low projected fabrication cost of large-size and high-quality crystals. Efficient n-type doping of monoclinic beta-phase of Ga 2 O 3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from the challenges of achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga 2 O 3 -based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a three-step growth-annealing-quench synthesis protocol for hydrogen-assisted Mg doping in ß-Ga 2 O 3 . The simulations take into account the gas phase equilibrium between H 2 , O 2 , and H 2 O, which determines the H chemical potential. We predict Ga 2 O 3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to Mg acceptor activation by H removal in GaN. For equilibrium annealing with re-equilibration of compensating O vacancies, there is an optimal temperature that maximizes the Ga 2 O 3 net acceptor density for a given Mg doping level; the acceptor density is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga 2 O 3 Fermi level drops below mid-gap down to about 1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral Mg Ga 0 acceptors. The resulting free hole concentration in Ga 2 O 3 is very low even at elevated operating temperature (~10 8 cm -3 at 400°C) due to the deep energy level of these Mg acceptors, and hole conductivity is further impeded by the polaron hopping mechanism. However, the Fermi-level reduction and suppression of free electron density in this doping-type converted (NA>ND) Ga 2 O 3 material are important for improved designs of Ga 2 O 3 electronic devices. These results illustrate the power of computational predictions not only for new materials but also for their synthesis science.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

Nano-membrane tri-gate β-gallium oxide (β-Ga 2 O 3 ) field-effect transistors (FETs) on SiO 2 /Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga 2 O 3 and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al 2 O 3 ) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec –1 , high drain current (I DS ) ON/OFF ratio of 1.5 × 10 9 , and negligible transfer characteristic hysteresis. Furthermore, we also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2019

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

The ultra-wide bandgap (~4.8 eV) and melt-grown substrate availability of β-Ga 2 O 3 gives promise to the development of next generation power electronic devices with dramatically improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-SiC and GaN. Also, with recent advancements made in GHz frequency RF applications, the potential for monolithic or heterogenous integration of RF and power switches has attracted researchers’ attention. Yet, it is expected that Ga 2 O 3 devices will suffer from self-heating due to the poor thermal conductivity of the material. Thermoreflectance thermal imaging and infrared thermography were used to understand the thermal characteristics of a MOSFET fabricated via homo-epitaxy. A 3D coupled electro-thermal model was constructed based on the electrical and thermal characterization results. The device model shows that a homo-epitaxial device suffers from an unacceptable junction temperature rise of ~1500°C under a targeted power density of 10 W/mm indicating the importance of employing device level thermal managements to individual Ga 2 O 3 transistors. The effectiveness of various active and passive cooling solutions was tested to achieve a goal of reducing the device operating temperature below 200°C at a power density of 10 W/mm. Results show that flip-chip hetero-integration is a viable option to enhance both the steady-state and transient thermal characteristics of Ga 2 O 3 devices without sacrificing the intrinsic advantage of high-quality native substrates. Also, it is not an active thermal management solution that entails peripherals requiring additional size and cost implications.

42 ENGINEERING↗
DOE OSTI2021

Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature

Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Hydrogen passivation of calcium and magnesium doped β-Ga 2 O 3

Calcium and magnesium doped beta-phase gallium oxide (β-Ga 2 O 3 ) single crystals were Czochralski grown in an iridium crucible and subsequently annealed in hydrogen at ~800° C. IR spectroscopy was used to investigate the roles of Mg and Ca dopants as well as H and Ir impurities. An IR peak at 3492 cm -1 was previously assigned to an O-H bond-stretching mode of a MgH complex in hydrogen-annealed Ga 2 O 3 :Mg and an IR peak at 3541 cm -1 is tentatively assigned to a similar mode in a CaH complex for H annealed Ga 2 O 3 :Ca. An IR peak at 5148 cm -1 is attributed to the presence of Ir 4+ when magnesium is present. Excitation with several different wavelengths used to confirm the position of the Ir level within the band gap. Our results suggest that isolated substitutional Ca dopants are less effective as deep acceptors than Mg. Polarization dependence of the iridium IR spectra is also discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Gallium Oxide Large Area UV Sensors

In this Phase I Program, we demonstrated the feasibility of a new generation of sensitive wide bandgap UV tunable photodiodes, which can detect small, fast pulses of UV lights and support detection of the Cherenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments. We believe the new tunable UV photodetector can replace the photomultiplier tubes in Cherenkov, neutrino, and dark matter detectors and save on size, weight, and required power. Furthermore, the SBIR team anticipates a variety of commercial applications for the UV photodetectors developed in this program. Solar- and visible-blind UV PDs are widely used in military, industrial, and commercial applications and are needed for applications, from solar observations, UV astronomy, missile tracking, automatization, short-range communication security, as well as environmental and biological research. Efficient large area wide bandgap semiconductor PDs can be used to support the detection of spacecraft based radiation as well. In summary, Ga 2 O 3 –based UV photodiodes were fabricated and characterized in this project. β-Ga 2 O 3 layers were grown on sapphire and single crystal bulk Ga 2 O 3 substrates. Tunability of energy bandgap of the Ga 2 O 3 in UVA, UVB, and UVC ranges were accomplished by alloying Ga 2 O 3 with Al 2 O 3 and In 2 O 3 . Feasibility of the Ga 2 O 3 –based UV photodiodes was tested using MOCVD growth of Ga 2 O 3 and its alloys on sapphire and bulk Ga 2 O 3 substrates, both of which were successfully demonstrated. High photo-to-dark current ratio and very low dark currents are achieved for the UV photodiodes.

(AlGa)2O3↗