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At least 127 records · Page 7

Performances Of Arrays Of Ge:Ga Far-Infrared Detectors

Report presents evaluation of performances of two electronic modules containing few-element linear focal-plane arrays of Ge:Ga photodetectors and associated multiplexing readout circuitry. Tested to demonstrate feasibility of many-element, two-dimensional focal-plane arrays of far-infrared detectors and associated circuitry for use in astronomical and other low-background scientific observations. Revealed deficiencies that must be overcome in future designs.

Mccreight, C.↗

Early Archean (approximately 3.4 Ga) prokaryotic filaments from cherts of the apex basalt, Western Australia: The oldest cellularly preserved microfossils now known

In comparison with that known from later geologic time, the Archean fossil record is miniscule: although literally hundreds of Proterozoic formations, containing more that 2800 occurrences of bona fide microfossils are now known, fewer than 30 units containing some 43 categories of putative microfossils (the vast majority of which are of questionable authenticity) have been reported from the Archean. Among the oldest known fossils are Early Archean filaments reported from cherts of the Towers Formation and the Apex Basalt of the 3.3-3.6 Ga-old Warrawoona Group of Western Australia. The paleobiologic significance of the Towers Formation microstructures is open to question: thin aggregated filaments are properly regarded as dubiomicrofossils (perhaps biogenic, but perhaps not); therefore, they cannot be regarded as firm evidence of Archean life. Although authentic, filamentous microfossiles were reported from a second Towers Formation locality, because the precise layer containing the fossiliferous cherts was not relocated, this discovery can neither be reconfirmed by the original collector nor confirmed independently by other investigators. Discovery of microfossils in bedded cherts of the Apex Basalt, the stratigraphic unit immediately overlying the Towers Formation, obviates the difficulties stored above. The cellularly preserved filaments of the Apex Basalt meet all of the criteria required of a bona fide Archean microfossils. Recent studies indicate that the Apex assemblage includes at least six morphotypes of uniseriate filaments, composed of barrel-shaped, discoidal, or quadrate cells and exhibiting rounded or conical terminal cells and medial bifurcated and paired half-cells that reflect the occurrence of prokaryotic binary cell division. Interestingly, the majority of these morphotypes are morphologically more similar to extant cyanobacteria than to modern filamentous bacteria. Prokaryotes seem clearly to have been hypobradytelic, and the evidence suggests (but does not prove) that physiologically advanced oxygen-producing photosynthesizers may have been represented in the Early Archean biota.

Schopf, J. W.↗

Extended long-wavelength lambda = 11-15-micron GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors

Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.

Zussman, A.↗

A resistive-gate In(0.53)Ga(0.47)As/InP heterostructure CCD

The first InGaAs/InP charge-coupled device is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In(0.53)Ga(0.47)As bandgap makes this structure applicable to direct-detection short-wavelength infrared imagers.

Rossi, D. V.↗

Evaluation of a far infrared Ge:Ga multiplexed detector array

The performance of a multielement Ge:Ga linear array under low-background conditions is investigated. On-focal plane switching is accomplished by MOSFET switches and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the responsivity was measured to be nominally 584 A/W, and the NEP was 1.0 x 10 exp -16 W/sq rt Hz. A detailed description of the test setup and the procedure is presented.

Farhoomand, Jam↗

The temperature dependent variation of bulk and surface composition of In(x)Ga(1-x)As on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

The paper investigates the bulk as well as near-surface composition of In(x)Ga(1-x)As epilayers on GaAs grown by chemical beam epitaxy (CBE) as a function of triethylindium flow rate and substrate temperature by reflection high energy electron diffraction (RHEED), X-ray diffraction, and XPS. To clarify whether the bulk stoichiometry of CBE-grown ternaries can be extracted from the growth rate change as determined by the change in the period of RHEED oscillations from binary to ternary compound growth, a systematic study of growth rate change as a function of ternary bulk composition determined by X-ray diffraction was performed at various temperatures. It is shown that for low growth temperatures there is a linear relationship between the two methods of determination, whereas no correlation is found for higher growth temperatures, in contrast to the MBE case where the two methods of determination yield identical results. In the near surface region the epilayer composition is determined in situ by XPS.

Hansen, H. S.↗

Near-infrared cathodoluminescence imaging of defect distributions in In(0.2)Ga(0.8)As/GaAs multiple quantum wells grown on prepatterned GaAs

The defect distribution in a highly strained In(0.2)Ga(0.8)As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near IR. By spatially correlating the luminescence arising from the MQW exciton recombination (950 nm) with the longer wavelength (1000-1200 nm) luminescence arising from the defect-induced recombination, it is demonstrated that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

Rich, D. H.↗

Geological evidence for a 2.6-Ga strewn field of impact spherules in the Hamersley Basin of Western Australia

Sand-sized spherules up to 1.7 mm across with spherulitic, vesicular, and other crystalline textures that consist mainly of K-feldspar help define a unique horizon in the well-preserved 2.6-Ga Wittenoom Formation in the Hamersley Basin of Western Australia. This layer is informally known as the spherule marker bed. In the northeastern part of the Hamersley Basin, similar spherules again occur at only one horizon, but here they are a minor constituent of a dolomitic debris-flow deposit known as the dolomixtite layer. The dolomixtite layer occurs in the Carawine Dolomite, which is stratigraphically equivalent to the Wittenoom Formation. Moreover, paleocurrent data from closely associated carbonate and volcaniclastic turbidites indicate the spherule marker bed was deposited in deeper-water paleoenvironments than the dolomixtite layer. Therefore, the dolomixtite layer is believed to be a proximal equivalent of the spherule marker bed. The layers that host the spherules are interpreted to be the deposits of a major sediment gravity flow that exhumed and redeposited most of the spherules after shallow burial, although the flow is not believed to have been a direct result of the proposed impact. The most likely site for the proposed impact would have been in the early Precambrian ocean close to the northeastern edge of the Pilbara Craton. Another thin horizon in the overlying Brockman Iron Formation contains spherules that again consist largely of K-feldspar and have internal textures strikingly similar to those of the Wittenoom Formation and Carawine Dolomite. The close resemblance of these spherules to those of the Wittenoom Formation and Carawine Dolomite suggests they also originated as impact melt droplets, even though they are admixed with volcaniclastic detritus. The stratigraphic separation between the two suggests that a second major impact occurred near the Hamersley Basin after a time interval of about 75 m.y. elapsed. This suggests the record of impacts in early Precambrian strata is richer than is generally appreciated.

Simonson, Bruce M.↗

Stressed and unstressed Ge:Ga detector arrays for airborne astronomy

The construction and operation of 2D arrays of both unstressed and stressed Ge:Ga photoconductive detectors for far-IR astronomy from the Kuiper Airborne Observatory is presented. The 25 element (5 x 5) arrays are designed for a new cryogenically cooled spectrometer. The 2D spatial array described has the advantage of absolute registry between pixels in a map.

Stacey, G. J.↗

Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In(0.2)Ga(0.8)As/GaAs multiple quantum wells

TEM and cathodoluminescence (CL) imaging and spectroscopy have been performed on In(0.2)Ga(0.8)As/GaAs MQW structures. Cross-sectional and plan-view TEM demonstrates that misfit dislocations (MDs) are confined to the MQW-to-GaAs interfacial regions. The observed large variation in the exciton luminescence intensity is interpreted as due to the presence of nonradiative recombination centers spread homogeneously in the MQW region away from interface MDs. These nonradiative recombination centers compete with exciton and midgap radiative centers at wavelengths of 950 nm and 1000-1600 nm, respectively, resulting in spatiallty correlated dark line defects for all CL imaging wavelengths.

Rich, D. H.↗

An analysis of the frequency limitations of an Al(x)Ga(1-x)As/GaAs optical modulator

An analysis is made of the frequency response of an Al(x)Ga(1-x)As/GaAs optical modulator operating at a wavelength of 0.83 micron and utilizing the linear-optic effect in a Mach-Zehnder configuration. It is shown that, in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. It is also shown that, by incorporating an insulator (a semiconductor with a large band gap) between the metallic electrode and the channel, the capacitance of the electroabsorptive modulator can be kept low at a reasonable value under the worst conditions.

Tabib-Azar, M.↗

Characteristics of 0.8- and 0.2-microns gate length In(x)Ga(1-x) As/In(0.52)Al(0.48)As/InP (0.53 less than or equal to x less than or equal to 0.70) modulation-doped field-effect transistors at cryogenic temperatures

The performance characteristics of InP-based In(x)Ga(1-x)As/In(0.52)Al(0.48)As (0.53 is less than or equal to x is less than or equal to 0.70) pseudomorphic modulation-doped field-effect transistors (MODFET's) as a function of strain in the channel, gate, length, and temperature were investigated analytically and experimentally. The strain in the channel was varied by varying the In composition x. The temperature was varied in the range of 40-300 K and the devices have gate lengths L(sub g) of 0.8 and 0.2 microns. Analysis of the device was done using a one-dimensional self consistent solution of the Poisson and Schroedinger equations in the channel, a two-dimensional Poisson solver to obtain the channel electric field, and a Monte Carlo simulation to estimate the carrier transit times in the channel. An increase in the value of the cutoff frequency is predicted for an increase in In composition, a decrease in temperature, and a decrease in gate length. The improvements seen with decreasing temperature, decreasing gate length, and increased In composition were smaller than those predicted by analysis. The experimental results on pseudomorphic InGaAs/InAlAs MODFET's showed that there is a 15-30 percent improvement in cutoff frequency in both the 0.8- and 0.2-micron gate length devices when the temperature is lowered from 300 to 40 K.

Lai, Richard↗

Experimental studies of flow separation of the GA(W)-2 airfoil at low speeds

Wind tunnel tests have been conducted on a NASA GA(W)-2 airfoil section at Reynolds number of 2.2 x 10(exp 6) and Mach number of 0.13. Detailed measurements of flow fields associated with turbulent boundary layers have been obtained at angles of attack of 10.3, 14.4, and 18.3 deg. Pre- and post-separated velocity and pressure survey results over the airfoil and in the associated wake are presented. Extensive force, pressure, tuft survey, hot-film survey, local skin friction, and boundary layer data are also included. Pressure distributions and separation point locations show good agreement with theory for the two lower angles of attack. Boundary layer displacement thickness, momentum thickness, and shape factor agree well with theory up to the point of separation. There is considerable disparity between extent of flow reversal in the wake as measured by pressure and hot-film probes. The difference is attributed to the intermittent nature of the flow reversal.

Seetharam, H. C.↗

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Weinberg, I.↗

Very Long Wavelength In(x)Ga(1-x)As/GaAs Quantum Well Infrared Photodetectors

We demonstrate a long wavelength (lambda(sub c)=20 microns) quantum well infrared photodetector using nonlattice matched In(x),Ga(l-x)As/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7 x 10(exp 10) cm square root of Hz/W at T= 10 K has been achieved.

Gunapala, S. D.↗