Microstructural Development During Thin Film Solidification: Comparison of Experiments and Simulations.
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Rodgers, Theron↗
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Reduction of Resistivity in Cu Thin Films by Partial Oxidation: Microstructural Mechanisms
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Prater, W.↗
Influence of ion-to-atom ratio on the microstructure of evaporated molybdenum thin films grown using low energy argon ions
The authors report the effect of argon ion to molybdenum atom ratio (r) on the microstructure of low energy (70 eV) argon ion assisted electron beam evaporated Mo thin films. Surface roughness, morphology, and crystallinity of Mo films are found to strongly depend on “r.” Increase of “r” from 0 to 100 induces gradual loss in crystallinity, reduction in surface roughness and systematic increase in density of the film. For “r” ∼ 100, average atomic density of the film approaches the bulk value (97%) with lowest surface roughness. Further, increasing “r” up to 170 reduces the atomic density, increases roughness, and increase in crystallinity induced by low energy Ar ion beam. The observed surface roughness and grain size determined by x-ray reflectivity and glancing incidence x-ray diffraction correlate well with atomic force microscopy measurements. This study demonstrates that for r = 100 one gets lowest roughness Mo film with highest density and nearly amorphous microstructure. The growth model is discussed by structural zone model.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Sputter deposition of Ta 1 W 1 Au 1 Bi 7 films for next generation hohlraums
Hohlraum simulation predicts a higher x-ray drive from Ta 1 W 1 Au 1 Bi 7 compared with our current Au hohlraum. Here, we study the effect of deposition process parameters including deposition rate, working pressure, target-to-substrate distance, substrate bias, and substrate temperature on the microstructure of Ta1W1Au1Bi7 films deposited by direct current magnetron sputtering onto planar substrates. We found that the substrate temperature has a pronounced effect on the film microstructure. This is attributed to the Bi low melting point (271°C) causing its adatom mobility to be strongly dependent on the substrate temperature. Additionally, we observed phase separation for films deposited with a high substrate bias. These results have important implications for the development of a robust Ta 1 W 1 Au 1 Bi 7 hohlraum fabrication process.
36 MATERIALS SCIENCE↗
Applications of diamond films and related materials; Proceedings of the 1st International Conference, Auburn, AL, Aug. 17-22, 1991
The present conference discusses the nucleation and growth of diamond from hydrocarbons, the cutting tool performance of CVD thick-film diamond, the characterization of CVD diamond grinding powder, industrial applications of crystalline diamond-coated tools, standardized SEM tribometry of diamond-coated substrates, residual stress in CVD diamond films, the optical properties of CVD diamond films, polycrystalline diamond films for optical applications, and diamond growth on ferrous metals. Also discussed are ion beam-irradiation smoothing of diamond films, electronic circuits on diamond substrates, diamond-laminated surfaces for evaporative spray cooling, electron devices based on the unique properties of diamond, diamond cold cathodes, thin-film diamond microstructure applications, Schottky diodes from flame-grown diamond, diamond films for thermionic applications, methods of diamond nucleation and selective deposition, high-rate/large-area diamond film production, halogen-assisted diamond growth, the economics of diamond technology, and the optical and mechanical properties of diamondlike films.
Tzeng, Yonhua↗
Correlation between microstructure and thermionic electron emission from Os-Ru thin films on dispenser cathodes
Osmium-ruthenium films with different microstructures were deposited onto dispenser cathodes and subjected to 1000 h of close-spaced diode testing. Tailored microstructures were achieved by applying substrate biasing during deposition, and these were evaluated with scanning electron microscopy, x-ray diffraction, and energy dispersive x-ray spectroscopy before and after close-spaced diode testing. Knee temperatures determined from the close-spaced diode test data were used to evaluate cathode performance. Cathodes with a large (10-11) Os-Ru film texture possessed comparatively low knee temperatures. Furthermore, a low knee temperature correlated with a low effective work function as calculated from the close-spaced diode data. It is proposed that the formation of strong (10-11) texture is responsible for the superior performance of the cathode with a multilayered Os-Ru coating.
36 MATERIALS SCIENCE↗
Transition from a nanocrystalline phase to an amorphous phase in In-Si-O thin films: The correlation between the microstructure and the optical properties
We investigated the structural and optical properties of In-Si-O thin films as the phase abruptly changes from nanocrystalline (nc) to amorphous (a) with increasing Si content. In-Si-O thin films were deposited on Si substrate using a co-sputtering deposition method. The RF power of the In{sub 2}O{sub 3} target was fixed at 100 W, while the power applied to the SiO{sub 2} target was varied between 0 W and 60 W. At the Si = 2.8 at. %, i.e., at the onset of amorphous phase, the optical properties, including the dielectric functions, optical gap energies, and phonon modes, changed abruptly which were triggered by changes in the crystallinity and surface morphology. X-ray diffraction (XRD) spectra showed crystalline (c-) In{sub 2}O{sub 3}-like peaks below Si = 2.2%. Additionally, a broad peak associated with an amorphous (a-) In{sub 2}O{sub 3} phase appeared above 2.8%. However, the Raman spectra of In-Si-O showed very weak peaks associated with c-In{sub 2}O{sub 3} below 2.2%, and then showed a strong Raman peak associated with a-In-Si-O above 2.8%. X-ray photoelectron spectroscopy measurements showed that oxygen vacancy-related peak intensities increased abruptly above Si = 2.8%. The contrasting results of XRD and Raman measurements can be explained as follows: first, the large enhancement in Drude tails in the a-In-Si-O phase was caused by Si-induced amorphization and a large increase in the density of oxygen vacancies in the In-Si-O thin films. Second, the apparently drastic increase of the Raman peak intensity near 364 cm{sup −1} (for amorphous phase, i.e., above Si = 2.8%) is attributed to a disorder-activated infrared mode caused by both the amorphization and the increase in the oxygen vacancy density in In-Si-O thin films.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Microstructural and mechanical characteristics of Ni–Cr thin films
Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.
36 MATERIALS SCIENCE↗
High-throughput multimodal exploration of a nanocrystalline Cu-Ag library
Sputter-deposited, nanocrystalline Cu-Ag thin films produced across a broad compositional and deposition-parameter space were evaluated to unravel the process-structure-property relationships important for creating hard, conductive electrical contacts and coatings. Combinatorial deposition involving pulsed direct current magnetron sputtering of elemental targets enabled swift examination of nearly the full range of alloy compositions and a relevant portion of deposition atomistics. Several high-throughput characterization modalities were employed to evaluate the chemistry, structure, and properties of the films. The resultant hardness, modulus, film density, crystal texture, and resistivity were analyzed in terms of key deposition characteristics (incident atom kinetic energy and incidence angle) predicted by binary-collision, kinematic Monte Carlo simulations. The study revealed improved hardness, parabolic resistivity dependence on composition, and compositional and process dependencies of film tarnishing. The results are discussed in the context of variations in microstructure and film density. Transmission electron microscopy and X-ray diffraction demonstrate several forms of compositional variation including solute segregation to grain boundaries as well as periodic, intragranular compositional modulations. Annealing of a Cu-rich alloy film exhibiting grain boundary segregation showed that this as-deposited, compositional variation is not stable above 100 °C. Finally, the Cu-Ag system is shown to have potential for hard, conductive, tarnish-resistant and room temperature-stable nanocrystalline thin films across the composition space.
36 MATERIALS SCIENCE↗
Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Advanced Si solid phase crystallization for vertical channel in vertical NANDs
The advanced solid phase crystallization (SPC) method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND) devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM) when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.
36 MATERIALS SCIENCE↗
DOE Final Report: A Unified Understanding of Residual Stress in Thin Films: Kinetic Models, Experiments and Simulations
Thin films are critical for a wide range of advanced technologies. However, the deposited films often have high levels of residual stress that can limit their performance or lead to failure. The stress is known to depend on many variables, including the processing conditions, type of material, deposition technique and the film’s microstructure. The goal of this DOE program was to develop a fundamental understanding of how the different processes that control thin film growth under different conditions can be related to the development of stress. In the program, systematic experiments were performed or analyzed that related the stress to the processing conditions that were used. Measurements of stress were obtained for films that were grown at different rates, different solutions (for electrodeposition), different particle energies (for sputter deposition) and different microstructures. Based on this data, models were developed to explain the observed dependence on the different parameters. The models were based on considering the balance among different stress-inducing mechanism occurring as the film grows (for both non-energetic and energetic deposition). Comparison of the model predictions with the experiments enabled the kinetic parameters to be determined for different materials. The resulting model equations provide a comprehensive picture of how stress changes with the processing conditions that can be used to optimize the growth of thin films.
36 MATERIALS SCIENCE↗
Enhanced Terahertz Emission of GaAs Microstructures
We observed the enhancement of terahertz radiation emitted from GaAs microstructures under wavelength tuned optical excitation. GaAs microstructure thin films were prepared by molecular beam epitaxy method. The peak amplitude of terahertz radiation from GaAs microstructure is more than eight times that from semi-insulating GaAs.
36 MATERIALS SCIENCE↗
Properties of Nb x Ti (1–x) N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. Here, this study explores the properties of Nb x Ti (1–x) N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, Nb x Ti (1–x) N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, Nb x Ti (1–x) N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of Nb x Ti (1–x) N films at less than 2% thickness variability, 2.4% T c variability and 3% composition variability. Film resistivity (140–375 Ωcm) shows a strong correlation with the film oxygen content, while the critical temperature T c (4.6 K–14.1 K) is strongly affected by film stoichiometry and its microstructure has only a moderate effect on modifying T c . Our results offer insights about the interplay between film stoichiometry, film microstructure and critical temperature.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
FePtC magnetic recording media with (200) textured MoC intermediate layer
The FePt films with thickness of 4–10 nm were deposited on MoC/CrRu/glass at 425 °C by using magnetron sputtering. The Mo{sub 40}C{sub 60} target was used to form the MoC and C two phases after deposition. The MoC intermediate layer was epitaxially grown on the (200) textured CrRu seed layer at 425 °C and the MoC (200) diffraction peak was not clearly indexed below 10 nm but observed at 25 nm. Finally, the FePt film was prepared on (200) textured MoC at 425 °C and shown the strong (001) texture. Perpendicular anisotropy of 1.7 × 10{sup 7} erg/cm{sup 3} and out-of-plane coercivity of 7.5 kOe has been demonstrated in 10 nm thick FePt film. From microstructure, the FePt grains were distributed in- or between-islands like structure and further separated by excess carbon from MoC intermediate layer. Thinner FePt film was more separated by excess carbon and shown higher coercivity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Study of non-linear Hall effect in nitrogen-grown ZnO microstructure and the effect of H{sup +}-implantation
We report magnetotransport studies on microstructured ZnO film grown by pulsed laser deposition in N{sub 2} atmosphere on a-plane Al{sub 2}O{sub 3} substrates and the effect of low energy H{sup +}-implantation. Non-linearity has been found in the magnetic field dependent Hall resistance, which decreases with temperature. We explain this effect with a two-band model assuming the conduction through two different parallel channels having different types of charge carriers. Reduced non-linearity after H{sup +}-implantation in the grown film is due to the shallow-donor effect of hydrogen giving rise to an increment in the electron density, reducing the effect of the other channel.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Mechanical Behavior of Neutron Irradiated Refractory Multi-Principal Element Alloys Processed via Spark Plasma Sintering
The search for advanced materials capable of withstanding the extreme conditions of Generation IV reactors is a critical area in materials science research. These reactors operate under severe environments, including high temperatures, corrosion, stress, and irradiation damage. Consequently, there is a need for innovative alloy systems to ensure the reliability and longevity of proposed Generation IV reactor components. Refractory multi-principal-element alloys (RMPEA) have emerged as a promising candidate due to their exceptional properties. These alloys, characterized by their composition of multiple principal elements in near-equiatomic ratios, exhibit superior resistance to irradiation damage, reduced void swelling, enhanced microstructural stability, and minimal irradiation-induced hardening. While initial studies on RMPEAs have shown promising results, most research has been limited to thin films, nanocrystalline microstructures, and ion irradiation, which do not accurately represent the behavior of bulk materials. To address this gap, our research focused on the neutron irradiation of bulk RMPEAs. We aim to conduct comprehensive post-irradiation examinations (PIE) of RMPEAs irradiated at the Advanced Test Reactor at Idaho National Laboratory. The RMPEAs were synthesized using spark plasma sintering (SPS) with mechanically alloyed metallurgical powder. The RMPEA specimens are a MoNbTi alloy system with additions of -Zr, and -ZrV. Furthermore, PIE consisted of mechanical testing and advanced materials characterization. The mechanical testing consisted of sub-sized tensile testing, micro- and nano- indentation. Microstructural characterization included scanning electron microscopy and transmission electron microscopy. Mechanical testing coupled with advanced microscopy techniques provides insight into phase morphology and its effects on the mechanical properties of the RMPEA specimens. The results indicate that both pristine and irradiated RMPEA specimens exhibited brittle behavior during tensile testing, which can be attributed to their heterogeneous microstructure. The SPS manufacturing process did not include any post treatment, which resulted in a heterogeneous microstructure. Energy-dispersive X-ray spectroscopy revealed the presence of intermetallic such as laves phases within the microstructure. Specifically, Ti-rich precipitates were observed in the MoNbTi specimen, while Mo-rich precipitates were found in the MoNbTiZrV specimen. Nano-hardness testing of pristine samples showed that the laves phases exhibited higher hardness values compared to the matrix phase, suggesting that precipitate hardening is likely the dominant hardening mechanism in these specimens. The results from this work will be used to build a finite element model to predict mechanical behavior of future MPEA compositions. Thus, enabling for a streamlined approach to developing novel MPEAs for the nuclear industry.
36 - MATERIALS SCIENCE↗
Phase-field modeling of aging-induced microstructure evolution in pentaerythritol tetranitrate thin films and ramifications for shock initiation
Aging of energetic materials may change performance and affect their safety and reliability, but the relationship between microstructure changes induced by aging and consequent performance changes has not been fully established. This work presents results of phase-field method simulations used to model microstructure evolution of vapor-deposited pentaerythritol tetranitrate (PETN) thin films. Simulated aging is shown to induce grain coarsening and substantial changes of the configuration of porosity in the film: Specifically, we show that porosity tends to concentrate in large pores to a greater degree in aged films, a state that is arrived at by closure or consolidation of small pores. To evaluate the performance of the as-deposited and aged films, we perform two-dimensional hydrocode flyer-film impact simulations that incorporate the phase-field output microstructures directly, permitting us to connect features therein to changes in reactivity, a key metric of energy output for shock initiation. The results demonstrate that declining sensitivity obtained for the simulated aged films can be correlated with the loss of fine-structured pores relatively early in the aging process, while long-term microstructure evolution that gradually alters the shape of large, branching pores is less impactful. Finally, we discuss commonalities and discrepancies between our simulation results and high-throughput initiation experiments on shock initiation of aged PETN thin films.
36 MATERIALS SCIENCE↗