Effects of helium plasmas on tungsten surfaces characterized by helium ion microscopy ion channeling and in-situ spectroscopic ellipsometry.
Abstract not provided.
Kolasinski, Robert↗
SEARCH · Engineering Papers
Results for “Ellipsometry”
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Epitaxy of polar semiconductor Co{sub 3}O{sub 4} (110): Growth, structure, and characterization
The (110) plane of Co{sub 3}O{sub 4} spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co{sup 3+} species at the surface. However, experimental studies of Co{sub 3}O{sub 4} (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co{sub 3}O{sub 4} films grown by molecular beam epitaxy in the polar (110) direction on MgAl{sub 2}O{sub 4} substrates. Reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and transmission electron microscopy measurements attest to the high quality of the as-grown films. Furthermore, we investigate the electronic structure of this material by core level and valence band x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Ellipsometry reveals a direct band gap of 0.75 eV and other interband transitions at higher energies. A valence band offset of 3.2 eV is measured for the Co{sub 3}O{sub 4}/MgAl{sub 2}O{sub 4} heterostructure. Magnetic measurements show the signature of antiferromagnetic ordering at 49 K. FTIR ellipsometry finds three infrared-active phonons between 300 and 700 cm{sup −1}.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Visible light carrier generation in co-doped epitaxial titanate films
Perovskite titanates such as SrTiO{sub 3} (STO) exhibit a wide range of important functional properties, including ferroelectricity and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications; however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr, we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr{sup 3+} dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to 2.4–2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Quantum confinement in transition metal oxide quantum wells
We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique
In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8 μm wavelength.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Understanding the Decreased Segmental Dynamics of Supported Thin Polymer Films Reported by Incoherent Neutron Scattering
Incoherent neutron scattering (INS) has commonly reported a suppression of segmental dynamics for supported thin polymer films as thickness is decreased, which is counter to expectations based on other measurement techniques such as ellipsometry and fluorescence. We utilized INS in order to measure the dynamics of thin films of comb polystyrene (PS) from 50 to 525 K. There is a significant suppression in dynamics as determined from the similar to 5 ns DebyeWaller factor, < u(2)>, as measured via INS for films as thick as 213 nm, while there is no change in the glass transition temperature (T-g) as determined by ellipsometry for films as thin as 20 nm. This poor correlation between T-g from ellipsometry and dynamics as measured by is attributed to contamination of nanosecond by incipient relaxation processes, differences in sensitivity to the postulated dynamically dead layer near the substrate due to the relative weighting of the distribution of dynamics between the two techniques, differences in the time scales probed, and possible decoupling between fast and slow dynamics under nanoconfinement. Moreover, these results suggest that branching of PS significantly increases the interactions with the substrate to suppress the dynamics. Both technique-specific sensitivity to time scales and its weighing of the average over the gradient in dynamic properties present at the interfaces are important to consider when qualitatively different phenomena are inferred from different measurements.
36 MATERIALS SCIENCE↗
Crystalline Silicon Solar Cells
Most solar cells are fabricated from crystalline or semicrystalline silicon since they are relatively inexpensive starting materials and the resulting solar cells are very efficient. As a result, the optical properties of silicon are extremely important in many aspects of solar cell manufacture, and have been determined by many groups using several techniques. The most reliable values of the optical functions of silicon have been determined using spectroscopic ellipsometry, augmented by optical transmission measurements of the absorption coefficient for wavelengths greater than 700 nm. Obviously, these optical functions depend on the wavelength of light, but they also depend significantly on temperature and morphology. Several thin films are very important to solar cell manufacture, including silicon nitride, silicon dioxide, and aluminum oxide. While the optical properties of these thin films are strong functions of deposition conditions, spectroscopic ellipsometry is ideal for characterizing them. This work will present recent spectroscopic ellipsometry data and optical transmission data from which the optical functions of silicon are obtained. The optical transmission data have been fit from 700 to 1200 nm to a modification of Macfarlane’s et al. formula [Phys. Rev. 111, (1958) 759], resulting in a reduced χ2 of 0.84. This formulation is particularly valuable in that it gives the optical absorption coefficient from 700 to 1200 nm as a function of both wavelength and temperature.
Jellison Jr, Gerald Earle↗
Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma
The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.
36 MATERIALS SCIENCE↗
Surface modification of sol–gel synthesized TiO{sub 2} nanoparticles induced by La-doping
The influence of La-doping in the range of 0.5–6.0 mol% on structural and morphological properties of TiO{sub 2} nanopowders synthesized by sol–gel routine has been investigated by XRPD, AFM, EDS and BET measurements, as well as Raman spectroscopy. The XRPD and Raman measurements have revealed the anatase phase as dominant in all nanopowders, with crystallite size decreasing from ∼ 15 nm in pure TiO{sub 2} to ∼ 12 nm in La-doped samples. The BET data suggest that all samples are fully mesoporous, with mean pore diameters in the range of ∼ 6–8 nm. The specific surface area and the complexity of pore structure are greater in doped samples than in pure TiO{sub 2} sample. The spectroscopic ellipsometry has apparently shown that the band gap has been gradually increased with the increase of La content. The STM and STS techniques have been used successfully to evaluate the surface morphology and electronic properties of La-doped nanopowders. All investigated properties have been related to photocatalytic activity, tested in degradation of a metoprolol tartrate salt (0.05 mM), and induced by UV-radiation. All doped samples showed increased photocatalytic activity compared to pure TiO{sub 2}, among which the 0.65 mol% La-doped sample appeared to be the most efficient. - Highlights: • Effects of La-doping on structural, morphological and electronic properties of TiO{sub 2} nanopowders. • Surface morphology and electronic properties of La-doped nanopowders evaluated by STM/STS. • Spectroscopic ellipsometry shown gradual increase of bandgap with the increase of La content. • Photocatalytic activity of samples was tested in degradation of MET under UV light.
36 MATERIALS SCIENCE↗
Photosensitivity of pulsed laser deposited Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} amorphous thin films
Graphical abstract: - Highlights: • Amorphous Ge{sub 20}As{sub 20}Se{sub 60}/Ge{sub 10}As{sub 30}Se{sub 60} films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge{sub 20}As{sub 20}Se{sub 60} layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge{sub 20}As{sub 20}Se{sub 60} thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.
36 MATERIALS SCIENCE↗
Scalable aqueous-phase fabrication of reduced graphene oxide nanofiltration membranes by an integrated roll-to-roll (R2R) process
Economic fractionation of multicomponent biomass-derived streams is a key challenge in biobased fuels and chemicals production. Kraft black liquor (BL) is generated at ~1 billion tons/yr globally from biomass pulping and contains ~15wt% total solids including lignin, hemicellulose fragments, and inorganics. Membrane-based BL concentration is attractive but challenged by low solute rejections and poor stability in BL, which combines alkaline pH (~13), high dissolved solids content (15+ wt%) and high temperature (70–85°C). Here we discuss the scaled fabrication and characterization of reduced graphene oxide (rGO) nanofiltration membranes by slot die coating on a roll-to-roll (R2R) with integrated vacuum filtration. Here, we obtain high-quality 90×30 cm rGO membranes (referred to as “R2R-rGO membranes” in this work) with ~100 nm average thickness supported on porous poly(ethersulfone) (PES) sheets, and an effective area of 2700cm 2 . We present characterizations of their microstructure and uniformity as mapped over large areas by scanning electron microscopy (SEM), ellipsometry, adhesion test and X-ray photoelectron spectroscopy (XPS). The constructed ellipsometry model for the rGO membrane/PES substrate composite was successfully applied to 48 different locations of the R2R-rGO membranes. The R2R-rGO membranes showed >98% lignin rejection with a steady state flux of ~12 LMH at 50bar in a 15.7wt% total solids (TS) kraft BL stream at 72°C and 2–3 gal/min crossflow rates. Slot die coating on a R2R platform with integrated vacuum filtration can enable rapid fabrication of high-quality GO membranes at scale without organic solvents or volatile organic compounds.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD
An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed increase in the optical bandgap of a-Si:H films close to the a-Si:H/cSi interface.
36 MATERIALS SCIENCE↗
Optical properties of large-area ultrathin MoS{sub 2} films: Evolution from a single layer to multilayers
We investigated the optical properties of ultrathin MoS{sub 2} films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS{sub 2} film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS{sub 2} thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d{sup 2}ε(E)/dE{sup 2}), we determined several critical point energies. The d{sup 2}ε(E)/dE{sup 2} spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electronic and optical properties of NbO{sub 2}
In the present study, we combine theoretical and experimental approaches in order to gain insight into the electronic properties of both the high-temperature, rutile (metallic) and low-temperature, body-centered tetragonal (insulating) phase of niobium dioxide (NbO{sub 2}) as well as the optical properties of the low-temperature phase. Theoretical calculations performed at the level of the local density approximation, Hubbard U correction, and hybrid functional are complemented with the spectroscopic ellipsometry (SE) of epitaxial films grown by molecular beam epitaxy. For the rutile phase, the local density approximation (LDA) gives the best description and predicts Fermi surface nesting consistent with wave vectors that lead to niobium-niobium dimerization during the phase transition. For the insulating phase, LDA provides a good quantitative description of the lattice, but only a qualitative description for the band gap. Including a Hubbard U correction opens the band gap at the expense of correctly describing the valence band and lattice of both phases. The hybrid functional slightly overestimates the band gap. Ellipsometric measurement is consistent with insulating behavior with a 1.0 eV band gap. Comparison with the theoretical dielectric functions, obtained utilizing a scissors operator to adjust the LDA band gap to reproduce the ellipsometry data, allows for identification of the SE peak features.
36 MATERIALS SCIENCE↗
Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO{sub 3}){sub n} films by means of metalorganic aerosol deposition
We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO{sub 3}){sub n} (n = ∞, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO{sub 3}(001) substrates by means of a sequential deposition of Sr-O/Ti-O{sub 2} atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2–4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5–6 repetitions of the SrO(SrTiO{sub 3}){sub 4} block at the level of 2.4%. This identifies the SrTiO{sub 3} substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Evidence and detailed study of a second-order phase transition in the (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] organic-inorganic hybrid material
The thermal properties of the organic-inorganic hybrid material (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] are investigated using diffuse reflectivity, spectroscopic ellipsometry, differential scanning calorimetry, Raman spectroscopy, and X-ray diffraction. The diffuse reflectivity, performed in heating mode, clearly evidences the presence of a singularity at 336 K. This is confirmed by the temperature dependence of the spectroscopic ellipsometry spectra, which points out a second-order phase transition at 336 K with a critical exponent ∼0.5. Differential scanning calorimetry measurements on a polycrystalline powder of (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] show a reversible phase transition detected at T{sub C} = 336 K without hysteresis. Raman spectroscopy data suggest that this transition arises from a change in the interactions between inorganic sheets (([PbI{sub 4}]{sup 2−}){sub ∞}) and organic protonated molecules ([C{sub 6}H{sub 11}NH{sub 3}]{sup +}). The structural analysis from power X-ray diffraction reveals an incomplete order-disorder transition of the cyclohexylammonium cation, causing a subtle contraction of the inter-plane distance. The transition results from repulsive close contacts between the organic molecules in the interlayer spacing.
36 MATERIALS SCIENCE↗
Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition
Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations
Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G{sub 0}W{sub 0}, GW{sub 0} to partially self-consistent sc-GW{sub 0}, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW{sub 0}-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗