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At least 127 records · Page 7

Magmatic, hydrothermal and ore element transfer processes of the southeastern Archean Superior Province implied from electrical resistivity structure

Although magmatic- and metamorphic- derived fluids are widely recognized mineralizing agents, the role of crustal architecture in defining source and sink zones within the middle to lower crust and upper mantle of ancient orogens remains enigmatic. The globally largest and best-preserved Archean greenstone belts lie in the Superior Province, Canada. They provide an ideal location to investigate the influence of igneous construction and subsequent syn-deformational plutonism and metamorphism on the localization of metal-rich melts and fluids throughout the crustal column. Integration of three-dimensional magnetotelluric modelling and seismic reflection sections across the Abitibi subprovince reveals details of a 'whole-of-crust' magmatic and hydrothermal system. East-west low resistivity structures broadly underlie the surface traces of the major deformation zones that are host to significant gold endowment (>200 Moz), while mid-crustal cross trends suggest mineralized fluids flowed along 'pipes' within fault planes. Most low resistivity structures are inferred to represent domains containing interconnected zones of graphite and/or sulfide. Furthermore, these delineate relict mantle source/transit domains and crustal pathways enriched by the flow of magmas or metamorphic fluids genetically related to a late-stage pulse of ore-bearing magmatism, possibly as a result of slab break-off or delamination. Using the combined MT and seismic data, we develop a 3-D crustal-scale model which highlights how evolving orogenic architecture-controlled mass transfer and metallogenic processes developed.

58 GEOSCIENCES↗

Nm-scale electrical resistance imaging on CdTe by scanning spreading resistance microscopy

Local resistance imaging can provide information on nm-scale carrier distribution in semiconductor devices. Scanning spreading resistance microscopy (SSRM), an atomic force microscopy-based nm-scale resistance mapping technique, has been developed for carrier delineation in Si microdevices. We report on the development and validation of SSRM on CdTe materials, by testing on molecular beam epitaxy (MBE) grown CdTe films. The probe/CdTe contact resistance was suppressed sufficiently below sample's spreading resistance by pressing the probe into the sample with ∼mN contact force and applying a large sample/probe forward bias voltage (V s ), which was understood by analyzing current-voltage (I-V) involving a serially connected insulating top layer with underlying spreading resistance. The carrier concentration as deduced from the resistance measurement, using a single mobility value, is consistent with Hall measurement with a standard deviation of 14% based on a set of MBE films with carrier concentrations in the range of 10 15 –10 16 /cm 3 . The doping polarity was readily identified by flipping V s polarity, where the resistance with reverse V s is orders of magnitude larger than forward V s . While focusing on the SSRM technique validation, we also show an example on an As-doped Cd(Se,Te) polycrystalline thin film of a high-performance CdTe solar cell, which illustrates the local resistance nonuniformity with up to two orders of magnitude differences, indicating if local mobility is roughly constant, local carrier concentration can have significant nonuniformity.

14 SOLAR ENERGY↗

Near net shape bulk laminated silicon iron electric steel for improved electrical resistance and low high frequency loss

The invention involves producing discontinuous, flake-shaped particles of a soft magnetic material, coating the flake-shaped particles with an electrically insulating coating, and consolidating the coated flaked-shaped particles to form a soft magnetic bulk shape. The consolidated bulk shape can comprise a layer or a simple or complex 3D magnet part shape, which has a consolidated layered microstructure that includes laminated soft magnetic regions that are substantially encapsulated by an electrical insulating layer to increase the resistivity of soft magnetic material, especially when used in silicon iron magnet parts.

Cui, Jun↗

Sputter deposition of high electrical resistivity Au-Ta alloy coatings on rotating substrates

Sputter deposition of gold-tantalum alloy coatings is a key process for manufacturing hohlraums for magnetically-assisted inertial confinement fusion implosions. In this report we describe direct current magnetron sputter deposition of ~ 10 - μ~ 10 - μm-thick films of Au-80 at.% Ta onto rotating sphero-cylindrical hohlraum and planar Si witness substrates. Emphasis is given to how film microstructure and properties are affected by main deposition parameters, including argon working gas pressure, substrate bias, and the source composition (a single alloyed target compared to co-sputtering from two elemental targets). Experimental findings are correlated with distributions of landing energies and incident angles of depositing species calculated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Deposition conditions characterized by low energetics of depositing species favor the formation of a β-Ta-like phase. Implications of these results to hohlraum fabrication are discussed.

36 MATERIALS SCIENCE↗