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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Map of the Zintl AM 2 Pn 2 Compounds: Influence of Chemistry on Stability and Electronic Structure

The AM 2 Pn 2 (A= Ca, Sr, Ba, Yb, Mg; M = Zn, Cd, Mg; and Pn = N, P, As, Sb, Bi) family of Zintl phases has been known as thermoelectric materials and has recently gained much attention for highly promising materials for solar absorbers in single-junction and tandem solar cells. In this paper, we will, from first principles, explore the entire family of AM 2 Pn 2 compounds in terms of their ground-state structure, thermodynamic stability, and electronic structure. We also perform photoluminescence spectroscopy on bulk powder and thin film samples to verify our results, including the first measurements of the band gaps of SrCd 2 P 2 and CaCd 2 P 2 . The AM 2 Pn 2 compounds exhibit broad stability, are mostly isostructural to CaAl 2 Si 2 (P$\overline{3}$m1), and cover a wide range of band gaps from 0 to beyond 3 eV. This could make them useful for a variety of purposes, for which we propose several candidates, such as CaZn 2 N 2 for tandem top cell solar absorbers and SrCd 2 Sb 2 and CaZn 2 Sb 2 for infrared detectors. By examining the band structures of the AM 2 Pn 2 , we find that Mg 3 Sb 2 has the most promise as a thermoelectric material due to several off-Γ valence band pockets, which are unique to it among the compositions studied here.

14 SOLAR ENERGY↗
NASA NTRS1983

Theory of silicon superlattices - Electronic structure and enhanced mobility

A realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.

Moriarty, J. A.↗
DOE OSTI2020

Exploring Hilbert space on a budget: Novel benchmark set and performance metric for testing electronic structure methods in the regime of strong correlation

This work explores the ability of classical electronic structure methods to efficiently represent (compress) the information content of full configuration interaction (FCI) wave functions. We introduce a benchmark set of four hydrogen model systems of different dimensionalities and distinctive electronic structures: a 1D chain, a 1D ring, a 2D triangular lattice, and a 3D close-packed pyramid. To assess the ability of a computational method to produce accurate and compact wave functions, we introduce the accuracy volume, a metric that measures the number of variational parameters necessary to achieve a target energy error. Using this metric and the hydrogen models, we examine the performance of three classical deterministic methods: (i) selected configuration interaction (sCI) realized both via an a posteriori (ap-sCI) and variational selection of the most important determinants, (ii) an a posteriori singular value decomposition (SVD) of the FCI tensor (SVD-FCI), and (iii) the matrix product state representation obtained via the density matrix renormalization group (DMRG). We find that the DMRG generally gives the most efficient wave function representation for all systems, particularly in the 1D chain with a localized basis. For the 2D and 3D systems, all methods (except DMRG) perform best with a delocalized basis, and the efficiency of sCI and SVD-FCI is closer to that of DMRG. For larger analogs of the models, the DMRG consistently requires the fewest parameters but still scales exponentially in 2D and 3D systems, and the performance of SVD-FCI is essentially equivalent to that of ap-sCI.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Excited state electronic structure of dimethyl disulfide involved in photodissociation at ∼200 nm

Dimethyl disulfide (DMDS), one of the smallest organic molecules with an S–S bond, serves as a model system for understanding photofragmentation in polypeptides and proteins. Prior studies of DMDS photodissociation excited at ∼266 nm and ∼248 nm have elucidated the mechanisms of S–S and C–S bond cleavage, which involve the lowest excited electronic states S 1 and S 2 . Far less is known about the dissociation mechanisms and electronic structure of relevant excited states of DMDS excited at ∼200 nm. Herein we present calculations of the electronic structure and properties of electronic states S 1 –S 6 accessed when DMDS is excited at ∼200 nm. Our analysis includes a comparison of theoretical and experimental UV spectra, as well as theoretically predicted one-dimensional cuts through the singlet and triplet potential energy surfaces along the S–S and C–S bond dissociation coordinates. Finally, we present calculations of spin–orbit coupling constants at the Franck–Condon geometry to assess the likelihood of ultrafast intersystem crossing. We show that choosing an accurate yet computationally efficient electronic structure method for calculating the S 0 –S 6 potential energy surfaces along relevant dissociation coordinates is challenging due to excited states with doubly excited character and/or mixed Rydberg-valence character. Our findings demonstrate that the extended multi-state complete active space second-order perturbation theory (XMS-CASPT2) balances this computational efficiency and accuracy, as it captures both the Rydberg character of states in the Franck–Condon region and multiconfigurational character toward the bond-dissociation limits. In conclusion, we compare the performance of XMS-CASPT2 to a new variant of equation of motion coupled cluster theory with single, double, and perturbative triple corrections, EOM-CCSD(T)(a)*, finding that EOM-CCSD(T)(a)* significantly improves the treatment of doubly excited states compared to EOM-CCSD, but struggles to quantitatively capture asymptotic energies along bond dissociation coordinates for these states.

Rishi, Varun↗
DOE OSTI2025

The electronic structure, crystal fields, and magnetic anisotropy in RECo 5 magnets

The current progress in describing rare-earth-based magnets' electronic structure and magnetic properties is discussed. We use several currently popular electronic structure methods to show the typical values of critical parameters that define the physics of RECo 5 (RE = rare earth atom) materials. The magnetic moments and magnetic anisotropy of 4f atoms are obtained using several approaches, including anisotropic 4f-charge density-constrained DFT and DFT+HI methods. We also suggest the introduction of "penalty" functional for obtaining correct variational total energy in the traditional Hund's rule-constrained DFT-based techniques. The applicability and future extensions are discussed. The proposed combination of methods is potentially suitable for high-throughput computational searches of new rare-earth-containing magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Relationship between atomic and electronic structure in Ln-bearing oxides

Metastable states of matter are of great interest as they offer the promise of novel functionality. They are often a natural consequence of exposure to nonequilibrium environments. In oxides, metastability can take the form of new polymorphs, chemical disorder, and even amorphization. While significant attention has been given to the impact those changes have on the atomic properties of the material, the corresponding changes in the electronic structure have received less attention. Here, using density functional theory, we consider how the electronic structure varies with potential metastable structures in two classes of lanthanide-bearing oxides—pyrochlores and interlanthanide sesquioxides. We find that the changes depend strongly on both the crystal structure and crystal chemistry of the compound with, for example, disordering and amorphization either increasing or decreasing the bandgap depending on the chemistry. For the 𝐴 2 ⁢𝐵 2 ⁢O 7 pyrochlores, we find different dependencies of the bandgap on the 𝐴 = 𝐿⁢𝑛 cations as the 𝐵 cation is changed, which we relate to the nature of the density of states at the conduction band minimum for different 𝐵 chemistries. Our calculations are validated by electron energy loss spectroscopy measurements for two pyrochlore compounds in which amorphization does reduce the bandgap, consistent with our calculations on these two compounds. In conclusion, our results highlight the relationship between atomic and electronic structure and how radiation can be used to modify and potentially control the electronic properties of oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2024

GPAW: An open Python package for electronic structure calculations

We review the GPAW open-source Python package for electronic structure calculations. GPAW is based on the projector-augmented wave method and can solve the self-consistent density functional theory (DFT) equations using three different wave-function representations, namely real-space grids, plane waves, and numerical atomic orbitals. The three representations are complementary and mutually independent and can be connected by transformations via the real-space grid. This multi-basis feature renders GPAW highly versatile and unique among similar codes. By virtue of its modular structure, the GPAW code constitutes an ideal platform for the implementation of new features and methodologies. Moreover, it is well integrated with the Atomic Simulation Environment (ASE), providing a flexible and dynamic user interface. In addition to ground-state DFT calculations, GPAW supports many-body GW band structures, optical excitations from the Bethe–Salpeter Equation, variational calculations of excited states in molecules and solids via direct optimization, and real-time propagation of the Kohn–Sham equations within time-dependent DFT. A range of more advanced methods to describe magnetic excitations and non-collinear magnetism in solids are also now available. In addition, GPAW can calculate non-linear optical tensors of solids, charged crystal point defects, and much more. Recently, support for graphics processing unit (GPU) acceleration has been achieved with minor modifications to the GPAW code thanks to the CuPy library. We end the review with an outlook, describing some future plans for GPAW.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Electronic structure of the kagome metal YbTi 3 Bi 4 studied using torque magnetometry

This study investigates the electronic structure of the kagome metal YbTi 3 ⁢Bi 4 using high-field torque magnetometry. The torque signal measured at a maximum field of 41.5 T reveals clear de Haas–van Alphen (dHvA) oscillations with a major frequency peak at F δ ~ 130 T. By rotating the sample at various tilt angles Θ, we observed that F δ exhibits a nearly 1/cos⁡Θ dependence, indicating the presence of a quasi-two-dimensional (2D) Fermi surface (FS) in YbTi 3 ⁢Bi 4 . This argument is further supported by the detection of a forward-leaning, sawtoothlike waveform in the dHvA effect, a hallmark of 2D FS characteristics. Notably, we identified two high-frequency peaks near F χ ~ 1900 T and F λ ~ 5600 T; however, these peaks quickly disappear at Θ greater than 21°. To better understand experimental observations, we computed the electronic band structure and FS using ab initio density-functional theory (DFT). The electronic bands reveal the presence of several Dirac points, flat bands, and van Hove singularities near the Fermi level. Five bands cross the Fermi level and contribute to the FS of this material. The FS comprises cylindrical sheets, with theoretical frequencies from the FS pockets aligning well with the experimental dHvA frequencies. Several FS parameters characterizing F δ were determined by analyzing the temperature and field dependence of the dHvA oscillations using the Lifshitz-Kosevich theory. Further, the detailed electronic properties presented in this work provide critical insights into the electronic structure of YbTi 3 ⁢Bi 4 and other titanium-based kagome compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Chemical and Electronic Structure at the Interface between a Sputter-Deposited Zn(O,S) Buffer and a Cu(In,Ga)(S,Se) 2 Solar Cell Absorber

The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer layer and an industrial Cu(In,Ga)(S,Se) 2 (CIGSSe) absorber for thin-film solar cells is investigated with X-ray and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy. We find a CIGSSe absorber surface band gap of 1.61 (±0.14) eV, which is significantly increased as compared to the minimal value derived with bulk-sensitive methods (≈1.1 eV). We find no indication for diffusion of absorber elements into the buffer layer. Surface- and bulk-sensitive measurements of the buffer layer suggest the presence of S-Zn and S-O bonds in the Zn(O,S) layer. We find that the naturally existing downward band bending toward the CIGSSe absorber surface is increased by the formation of the interface, likely enhancing carrier separation under illumination. We also derive a flat conduction band alignment, in line with the reported high conversion efficiencies of corresponding large-area solar cells.

14 SOLAR ENERGY↗
DOE OSTI2024

An under-approximation of entropy for elemental multiconfigurational ground state electronic structures

A combinatorial approach has been applied to the allowable permutations of quantum electronic configurations under the constraints of Hund's rule for established ground state configurations toward an under-approximation of electronic structure entropy. Combined with a previously reported over-approximation, the approximations are used in conjunction in an attempt to bracket the upper and lower entropy limits for multiconfigurational ground state electronic structure entropy and compared to known standard molar entropies for the elements. This formality has been used for the application of a classical statistical mechanics methodology to be applied to the discrete sets of quantum mechanical states of Pu in order to calculate orbital occupancies in Pu's multiconfigurational ground state. Without consideration of the relative energies of various possible electronic configurations contributing to the multiconfigurational ground state, the calculations are performed under a general energy degeneracy assumption weighted to the number of permutations for specific configurations. The number of configurations assumed to significantly contribute is gradually constrained in order to approach a low-order approximation of orbital occupancies in Pu that are then compared to experimental and other calculated results from the literature.

Beaux, II, Miles F. (ORCID:000000032192626X)↗
DOE OSTI2020

Valence band electronic structure of the van der Waals ferromagnetic insulators: VI 3 and CrI 3

Ferromagnetic van der Waals (vdW) insulators are of great scientific interest for their promising applications in spintronics. It has been indicated that in the two materials within this class, CrI 3 and VI 3 , the magnetic ground state, the band gap, and the Fermi level could be manipulated by varying the layer thickness, strain or doping. To understand how these factors impact the properties, a detailed understanding of the electronic structure would be required. However, the experimental studies of the electronic structure of these materials are still very sparse. Here, we present the detailed electronic structure of CrI 3 and VI 3 measured by angle-resolved photoemission spectroscopy (ARPES). Our results show a band-gap of the order of 1 eV, sharply contrasting some theoretical predictions such as Dirac half-metallicity and metallic phases, indicating that the intra-atomic interaction parameter (U) and spin-orbit coupling (SOC) were not properly accounted for in the calculations. We also find significant differences in the electronic properties of these two materials, in spite of similarities in their crystal structure. In CrI 3 , the valence band maximum is dominated by the I 5p, whereas in VI 3 it is dominated by the V 3d derived states. Our results represent valuable input for further improvements in the theoretical modeling of these systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Complex structure due to As bonding and interplay with electronic structure in superconducting BaNi 2 As 2

BaNi 2 As 2 is a superconductor chemically related to the Fe-based superconductors, with a complex and poorly understood structural phase transition. We show, based on first-principles calculations, that, in fact, there are two distinct competing structures. These structures are different from the electronic, transport, and bonding points of view but are close in energy. These arise due to complex As bonding patterns and drive distortions of the Ni layers. This is supported by photoemission experiments. This is very distinct from views of the distortion as being primarily driven by electrons at the Fermi surface as in a classical charge density wave, or by correlated electron physics associated with the Ni d electrons and the Ni d orbitals. The structural distortion, although connected with As does lead to an interplay of electronic and structural behavior including induced anisotropic electronic transport. Here, the local bonding nature of the instabilities and the competition between distortions is discussed in the context of the complex behavior observed in BaNi 2 As 2 samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1978

Electronic structure of CaO. I

Electronic wavefunctions for 15 states of CaO arising (nominally) from six electron occupancies are calculated at the single configuration (sc) SCF level and analyzed qualitatively in terms of Mulliken populations and an approximate overlap criterion. The accuracy of the sc approximation is assessed and shown to be highly inadequate in several cases. Approximate Te's are extracted from these results when warranted by the quality of the sc wavefunctions. An improved two configuration wavefunction for the lowest 1 Sigma + state is also determined and discussed in detail.

Bauschlicher, C. W., Jr.↗
DOE OSTI2025

Dimensional Reduction Guides Electronic Structure Evolution in the A n Cu 4–n SnS 4 Semiconductor Series

The search for new functional materials with tunable properties remains a central challenge in chemistry, particularly for applications in energy and electronics. In this work, we present a framework for predictive crystal design in alkali metal chalcogenides that enables controlled dimensional reduction of a parent covalent motif, yielding a broad range of electronic structures, which systematically evolve from one parent to the other. We present 11 new members of the A n Cu 4–n SnS 4 family (A = alkali metal; n = 0–4), which reduce the three-dimensional (3D) covalent network of Cu 4 SnS 4 into various 3D, 2D, 1D, and 0D [Cu 4–n SnS 4 ] n− motifs through the substitution of Cu with alkali metals of various radii. The end members of the family set the range in achievable band gaps at 0.99 eV for fully covalent Cu 4 SnS 4 (n = 0) and 3.38 eV for K 4 SnS 4 (n = 4) with 0D [SnS 4 ] n− tetrahedra. As the dimensionality of [Cu 4–n SnS 4 ] n− systematically reduces within A n Cu 4–n SnS 4 (n = 1–3), a stepwise increase in band gap energy occurs through a gradual decrease in the energy of the valence band maximum and an increase in the conduction band minimum, with an increase in the effective masses of charge carriers. Furthermore, irrespective of the alkali metal, the thermal stability decreases with decreasing [Cu 4–n SnS 4 ] n− dimensionality within the quaternary members. Most importantly, we demonstrate that predictable crystal structure and property evolution for a given composition space is possible by deriving a general formula based on substituting the covalent metals of a parent structure with alkali metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Interstitial Atoms and the Frustrated and Allowed Structural Transitions Principle: Tunability in the Electronic Structure of AuCu 3 ‐type Frameworks in Dy 4 T 1− x Ga 12 (T = Ag, Ir)

In this Article, we explore how the chemical pressure (CP) features of an intermetallic phase may provide opportunities to couple perturbations in electron count with the stabilization of the underlying geometrical structure. AuCu 3 ‐type LnGa 3 (Ln = lanthanide or group 3 metal) phases contain octahedral cavities of negative CP held open by overly compressed Ln–Ga interactions, leading to a series of transition metal‐stuffed derivatives. We present new additions to this family with the synthesis and crystal structures of Dy 4 T 1−x Ga 12 with (T, x) = (Ag, 0.29) and (Ir, 0.15), adopting Y 4 PdGa 12 ‐type superstructures of the AuCu 3 ‐type. density functional Ttheory (DFT)‐CP calculations, when adjusted to avoid dipolar CP features, affirm that T atom incorporation provides a mechanism for the relief of packing tensions, while electronic density of states distributions illustrate that the T atoms serve largely as electron or hole donors to the band structure, as needed for them to attain d 10 configurations. The maximum obtainable value for x may be limited by a mismatch between the Fermi energy and pseudogap, in line with the balance of factors envisioned by the frustrated and allowed structural transitions principle. Furthermore, trends in resistivity measurements on T = Ir, Pd, and Ag compounds are interpretable in terms of the varying degrees of disorder arising from x < 1.0.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Photon energy and polarization-dependent electronic structure of Cr-doped Bi 2 Se 3

In this article, we report a comparative study of the electronic structure of Cr-doped and pristine Bi 2 Se 3 . Circular dichroism and photon-energy-dependent angle-resolved photoemission experiments were performed. Even though the surface states seen on the Cr-doped samples are gapped, they exhibit strong circular dichroism, for which we provide its origin in accordance with the nontrivial band structure of the bulk. We note the surface electronic structure measurements with linear and circular polarized light show signatures that the orbital composition of the surface states is changed with Cr doping. Our observations not only provide further spectroscopic information about topological materials, but also promotes an alternative experimental tool to control their spin-orbital texture.

36 MATERIALS SCIENCE↗