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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2010

Massive Star Formation of the SGR a East H (sub II) Regions Near the Galactic Center

A group of four compact H II regions associated with the well-known 50 km/s molecular cloud is the closest site of on-going star formation to the dynamical center of the Galaxy, at a projected distance of approximately 6 pc. We present a study of ionized gas based on the [Ne II] (12.8 micron) line, as well as multi-frequency radio continuum, Hubble Space Telescope Pa alpha, and Spitzer Infrared Array Camera observations of the most compact member of the H II group, Sgr A East H II D. The radio continuum image at 6 cm shows that this source breaks up into two equally bright ionized features, D1 and D2. The spectral energy distribution of the D source is consistent with it being due to a 25 =/- 3 solar mass star with a luminosity of 8 +/- 3 x 10(exp 4) Solar luminosity . The inferred mass, effective temperature of the UV source, and the ionization rate are compatible with a young O9-B0 star. The ionized features D1 and D2 are considered to be ionized by UV radiation collimated by an accretion disk. We consider that the central massive star photoevaporates its circumstellar disk on a timescale of 3x (exp 4) years giving a mass flux approximately 3 x 10(exp -5) Solar Mass / year and producing the ionized material in D1 and D2 expanding in an inhomogeneous medium. The ionized gas kinematics, as traced by the [Ne II] emission, is difficult to interpret, but it could be explained by the interaction of a bipolar jet with surrounding gas along with what appears to be a conical wall of lower velocity gas. The other H II regions, Sgr A East A-C, have morphologies and kinematics that more closely resemble cometary flows seen in other compact H II regions, where gas moves along a paraboloidal surface formed by the interaction of a stellar wind with a molecular cloud.

Yusef-Zadeh, F.↗
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗
NASA NTRS2012

Polarization of Directly Imaged Young Giant Planets as a Probe of Mass, Rotation, and Clouds

Young, hot gas giant planets at large separations from their primaries have been directly imaged around several nearby stars. More such planets will likely be detected by ongoing and new imaging surveys with instruments such as the Gemini Planet Imager (GPI). Efforts continue to model the spectra of these planets in order to constrain their masses, effective temperatures, composition, and cloud structure. One potential tool for analyzing these objects, which has received relatively less attention, is polarization. Linear polarization of gas giant exoplanets can arise from the combined influences of light scattering by atmospheric dust and a rotationally distorted shape. The oblateness of gas giant planet increases of course with rotation rate and for fixed rotation also rises with decreasing gravity. Thus young, lower mass gas giant planets with youthful inflated radii could easily have oblateness greater than that of Saturn s 10%. We find that polarizations of over 1% may easily be produced in the near-infrared in such cases. This magnitude of polarization may be measurable by GPI and other instruments. Thus if detected, polarization of a young Jupiter places constraints on the combination of its gravity, rotation rate, and degree of cloudiness. We will present results of our multiple scattering analysis coupled with a self-consistent dusty atmospheric models to demonstrate the range of polarizations that might be expected from resolved exoplanets and the range of parameter space that such observations may inform.

Marley, Mark Scott↗
NASA NTRS1985

The primary cosmic ray mass composition at energies above 10(14) eV

It is shown in this paper that the experimental data on extensive air showers at the energy interval 10 to the 15th power - 10 to the 17th power eV seems to be described best if it is assumed that the Galactic cosmic rays are described by some sort of a two component picture. The first component is of a mixed composition similar to that at lower energies and the second is dominated by protons. Overall spectrum starts to be enriched in protons at energies about 10 to the 15th power eV bu the effective mass of the primaries remains constant up to energies around 10 to the 16th power eV. That results from the fact that composition gradually changes from multi-component to mixture of protons and heavies. That picture receives also some sort of support from recent observations of relatively high number of nergetic protons in JACEE and Concorde experiments.

Gawin, J.↗
NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2001

2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

Svizhenko, Alexei↗
NASA NTRS1972

Premium quality 5A1-2.5 Sn ELI titanium production

Preliminary design and reliability analysis conducted on the turbopump for the NERVA 75,000 full flow cycle engine, indicated that the turbopump bearings were the most critical turbopump parts in meeting the 10 hour life at the required turbopump reliability of .99978. The analysis revealed that significant reductions (approximately a factor of 3.25) in bearing loads would be achieved by fabricating the rotating parts from titanium in lieu of A286 or 718. This is basically due to the difference in density of the materials and the resulting mass effect on the location of the first and second stick mode critical speeds. For the selected rotor configuration, the lighter material has a first critical speed at approximately 36,000 rpm, while that of the heavier material has a first critical at approximately 27,000 rpm. As the operating range of the turbopump is from 0 to 30,000 rpm, the heavier material would have a stick mode critical in the operating range.

Dessau, P. P.↗
NASA NTRS1974

Isotopic composition of cosmic ray nuclei with Z greater than or equal to 10

Results of measurements of the isotopic composition of Z greater than or equal to 10 cosmic ray nuclei using a new technique employing a combination of Cerenkov and total energy counters. An effective mass resolution of about 0.4 AMU is obtained for particles with energies between 400 and 500 MeV/nuc and charges between 12 and 16. The preliminary mass distribution of nuclei with charges from 12 to 28 is presented and discussed.

Webber, W. R.↗
NASA NTRS1974

Tunneling through thin MOS structures - Dependence on energy /E-kappa/

The tunneling characteristics of Cr/SiO2/Si structures in the thickness range from 23 to 34 A are reported. The E-kappa dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness-independent factor which decreases approximately exponentially with the energy below the direct band edge.

Maserjian, J.↗
NASA NTRS1975

A formalism for cosmic ray propagation studies

The continuity equation for cosmic ray propagation is used to derive a set of linear equations interrelating the fluxes of multiply charged nuclei as observed at any particular part of the galaxy. The derivation leads to model independent definitions for cosmic ray storage time, mean density of target nuclei and effective mass traversed. The set of equations form a common framework for comparisons of theories and observations. As an illustration, it is shown that there exists a large class of propagation models which give the same result as the exponential path length model. The formalism is shown to accommodate dynamic as well as equilibrium models of production and propagation.

Golden, R. L.↗