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At least 127 records · Page 7

Dani Sleight Intern Poster

The NRDS Portal is a login-based data storage solution and science data gateway for researchers to centralize and analyze data before publication. Users can upload, edit, review, and approve their own datasets within the site to eventually be published for public use on the main NRDS site. More development was needed to extend NRDS Portal with new Artificial Intelligence features.

99 - GENERAL AND MISCELLANEOUS↗

Semi-Automated, Object-Based Tomography of Dislocation Structures

The characterization of the three-dimensional arrangement of dislocations is important for many analyses in materials science. Dislocation tomography in transmission electron microscopy is conventionally accomplished through intensity-based reconstruction algorithms. Although such methods work successfully, a disadvantage is that they require many images to be collected over a large tilt range. Here, we present an alternative, semi-automated object-based approach that reduces the data collection requirements by drawing on the prior knowledge that dislocations are line objects. Our approach consists of three steps: (1) initial extraction of dislocation line objects from the individual frames, (2) alignment and matching of these objects across the frames in the tilt series, and (3) tomographic reconstruction to determine the full three-dimensional configuration of the dislocations. Drawing on innovations in graph theory, we employ a node-line segment representation for the dislocation lines and a novel arc-length mapping scheme to relate the dislocations to each other across the images in the tilt series. We demonstrate the method for a dataset collected from a dislocation network imaged by diffraction-contrast scanning transmission electron microscopy. Based on these results and a detailed uncertainty analysis for the algorithm, we discuss opportunities for optimizing data collection and further automating the method.

47 OTHER INSTRUMENTATION↗

Line tension induced character angle dependence of dislocation mobility in FCC alloys

Here, we explore the character angle dependence of dislocation-solute interactions in a face-centered cubic random Fe0.70Ni0.11Cr0.19 alloy through molecular dynamics (MD) simulations of dislocation mobility. Using the MD mobility data, we determine the phonon and thermally activated solute drag parameters which govern mobility for each dislocation character angle. The resulting parameter set indicates that, surprisingly, the solute energy barrier does not depend on character angle. Instead, only the zero-temperature flow stress—which is dictated by the activation area for thermal activation—is dependent on character angle. By analyzing the line roughness from MD simulations and the geometry of a bowing dislocation line undergoing thermal activation, we conclude that the character angle dependence of the activation area in this alloy is governed by the dislocation line tension, rather than the dislocation-solute interaction itself. Our findings motivate further investigation into the line geometry of dislocations in solid solutions.

36 MATERIALS SCIENCE↗

Line profile analysis of dislocation densities of the δ-phase 239 Pu-2.0 at%Ga alloy using neutron diffraction

Time-of-flight neutron diffraction measurements were conducted at ambient conditions to study microstructures of the δ-phase 239 Pu-2at% Ga alloy. Based on the line profile analysis of diffraction data we derived dislocation densities using a correction routine to account for the anisotropic strain broadening. Our results show here that the average dislocation density in the as-received sample, previously treated at cryogenic temperatures, is five times higher than the dislocation density measured after annealing the sample, indicating that the neutron instrumentation used in this work has sufficient resolution to detect the dislocation density changes in different sample processing. These results are also in reasonably good agreement with the dislocation densities previously reported based on TEM observations and x-ray diffraction data, suggesting that the simple correction routines applied in this work have a fairly good fidelity for deriving important microstructural information such as dislocation density for elastically highly anisotropic δ-phase 239 Pu-Ga alloys.

36 MATERIALS SCIENCE↗

Quantifying the dislocation content of atomically resolved grain boundary line defects using the Nye tensor

The Nye tensor, which quantifies the density of Burgers vector for a given dislocation line direction, can be effectively used to characterize dislocation content in bulk crystals from atomic-resolution transmission electron microscopy images. The Nye tensor can be calculated from these images, in part because the reference state is simply defined by the lattice of the perfect crystal. The application of the Nye tensor to interfacial line defects, for which the natural reference state is the dichromatic pattern of the two grains in their reference orientation, poses additional challenges. In this work, we present a method that employs the Nye tensor to characterize the edge dislocation content of line defects at grain boundaries from atomic-resolution images. This approach enables us to rapidly characterize all edge dislocation content along a grain boundary. Additionally, the Nye tensor provides information about line defect core structure. Finally, we demonstrate this method on two exemplar defects: a twin boundary disconnection and a facet junction in face-centered cubic Au.

Crystallographic defects↗

Macroscopic and microscopic investigations on uniaxial ratchetting of two-phase Ti–6Al–4V alloy

The uniaxial ratchetting of Ti–6Al–4V alloy with two phases (i.e., primary hexagonal close packed (HCP) α and secondary body-centered cubic (BCC) β phases) was investigated by macroscopic and microscopic experiments at room temperature. Firstly, the effects of cyclic softening/hardening feature, applied mean stress and stress amplitude on the uniaxial ratchetting of the alloy were discussed. The macroscopic investigation of Ti–6Al–4V alloy presents obvious strain-amplitude-dependent cyclic softening, as well as a three-staged evolution curve with regard to the ratchetting strain rate. The ratchetting depends greatly on the applied mean stress and stress amplitude while the ratchetting strain increases with the increasing applied mean stress and stress amplitude. Then, the evolution of dislocation patterns and deformation twinning during the uniaxial ratchetting of two-phase Ti–6Al–4V alloy were observed using transmission electron microscopy (TEM). The microscopic observation shows that deformation twinning occurs in the primary α phase and its amount increases gradually during the uniaxial ratchetting. Simultaneously, the planar dislocation evolves from discrete lines to some dislocation nets and parallel lines with the increasing number of cycles. The deformation twinning in the primary α phase is one of main contributions to the uniaxial ratchetting of Ti–6Al–4V alloy, and should be considered in the construction of corresponding constitutive model. - Highlights: • A three-staged ratchetting occurs in the stress-controlled cyclic tests of Ti–6Al–4V alloy. • Dislocation patterns change from discrete lines to nets and parallel lines. • Deformation twinning occurs during the uniaxial ratchetting. • Both dislocation slipping and twinning are the causes of ratchetting.

36 MATERIALS SCIENCE↗

Transonic dislocation propagation in diamond

Here, the motion of line defects (dislocations) has been studied for more than 60 years, but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motion between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We used femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.

36 MATERIALS SCIENCE↗

Interaction between cast silicon properties and solar cell performance

Three types of cast silicon, Silso, HEM (Heat-Exchanger Method) and UCP (Ubiquitous Crystallization Process) were studied for their use as solar cells. Optical microscopy after etching revealed a high density of uniform dislocations (approaching 1,000,000/sq cm), lines of dislocations indicating stress during crystal growth, and precipitates, some of which generate dislocations. Solar cells were fabricated by three processes. Results of solar cell processing revealed that these materials produce cells of lower efficiency than Czochralski control cells, and that the efficiencies of the three materials were quite close. Diffusion length and spectral response data are shown. Certain structural features are correlated with solar cell efficiency, diffusion length, and spectral response. Electron-beam induced current (EBIC) and light spot scanning are used to back up other measurements.

Hyland, S.↗

Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.

36 MATERIALS SCIENCE↗

High-temperature damage evolution in 10 keV He+ irradiated W and W-5Re

Highlights: • High-temperature damage in pure W appeared strongly dependent upon foil thickness. • Visible bubbles occurred at above a threshold fluence of ~ 4.5×10{sup 19} He{sup +}/m{sup 2}. • Dislocations with b = ½ were identified and exhibited a wavy morphology. • The bypass of bubbles by dislocations operated through simple shear. • Rhenium gave rise to ~ 10-40% increase in bubble size and a pronounced change in bubble morphology. - Abstract: High-temperature damage evolution in pure W and W-5Re has been studied by combining transmission electron microscopy and in-situ irradiations with 10 keV He{sup +} ions. The irradiations covered a temperature range of T{sub irr} = 773–1473 K and a fluence range of (4.5–15) × 10{sup 19} He{sup +}/m{sup 2}. In pure W, detailed characterizations have shown that damage evolution is highly dependent upon the foil thickness. Regions of thickness irr from 773 K to 1473 K, a pronounced bubble growth and an increased degree of bubble ordering were observed. In thicker regions (≳100 nm), 1/2<111> dislocation loops and line entanglements were found up to 1473 K, and were often seen to be decorated with helium bubbles. In W-5Re, areas of different foil thickness exhibited only small differences in damage evolution. The densities of bubbles were comparable to those seen in pure W at all temperatures, while the average size of bubbles was found to be ~10–40% higher. The damage microstructure transformed from a mixture of dislocation loops and bubbles at 773 K to dislocation line entanglements decorated with bubbles at 1473 K.

36 MATERIALS SCIENCE↗

Free energy change of a dislocation due to a Cottrell atmosphere

The free energy reduction of a dislocation due to a Cottrell atmosphere of solutes is computed using a continuum model. In this work, we show that the free energy change is composed of near-core and far-field components. The far-field component can be computed analytically using the linearized theory of solid solutions. Near the core the linearized theory is inaccurate, and the near-core component must be computed numerically. The influence of interactions between solutes in neighbouring lattice sites is also examined using the continuum model. We show that this model is able to reproduce atomistic calculations of the nickel–hydrogen system, predicting hydride formation on dislocations. The formation of these hydrides leads to dramatic reductions in the free energy. Lastly, the influence of the free energy change on a dislocation’s line tension is examined by computing the equilibrium shape of a dislocation shear loop and the activation stress for a Frank–Read source using discrete dislocation dynamics.

42 ENGINEERING↗

Parquet: Regions of areal plastic dislocations (on Venus)

The extensive flat elevations of the Northern Hemisphere of Venus are covered with frequently intersecting lines of dislocations, resembling the outline of a giant parquet. In the internal sections of these regions we find grabens and regions of extension, and on the periphery lobe-shaped flow structures. The parquet was formed after the beginning of the formation of the lava plains, but covered by the youngest lava. These structures apparently arose partly because of the dragging of blocks of crust by the asthenospheric flows, and partly in the gravitational sliding of such heated blocks in the partial melting of their base. It is possible that these elevations occupy on Venus the place of the Earth's rift systems.

Sukhanov, A. L.↗

The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations

A canonical quantization procedure is applied to the interaction of elastic waves—phonons—with infinitely long dislocations that can oscillate about an equilibrium, straight line, configuration. The interaction is implemented through the well-known Peach–Koehler force. For small dislocation excursions away from the equilibrium position, the quantum theory can be solved to all orders in the coupling constant. We study in detail the quantum excitations of the dislocation line and its interactions with phonons. The consequences for the drag on a dislocation caused by the phonon wind are pointed out. We compute the cross-section for phonons incident on the dislocation lines for an arbitrary angle of incidence. The consequences for thermal transport are explored, and we compare our results, involving a dynamic dislocation, with those of Klemens and Carruthers, involving a static dislocation. In our case, the relaxation time is inversely proportional to frequency, rather than directly proportional to frequency. As a consequence, the thermal transport anisotropy generated on a material by the presence of a highly-oriented array of dislocations is considerably more sensitive to the frequency of each propagating mode, and, therefore, to the temperature of the material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗