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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Shieh, Tsay-Jiu↗
NASA NTRS1990

Experimental investigation of a new device to control the asymmetric flowfield on forebodies at large angles of attack

An exploratory experimental investigation of a new device to control the asymmetric flowfield on forebodies at large angles of attack has been conducted. The device is a rotatable forebody tip, which varies in cross section from circular at its base to elliptic at its tip. The device itself extends over a small portion of the aircraft or missile forebody. The device provides two important improvements. First, it replaced the normally random behavior of the nose side force as a function of nose tip orientation with a predictable and generally sinusoidal distribution and, second, the device showed promise for use as part of a vehicle control system, to be deflected in a prescribed manner to provide additional directional control for the vehicle. The device was tested on a cone/cylinder model having a 10 deg semiapex angle and on a 3.0 caliber tangent ogive model, each with a base diameter of 3.5 in, for angles of attack from 30 to 60 deg. Data were taken from 3 circumferential rows of pressure taps on each model at a Reynolds number of 84,000 based on cylinder diameter and by a helium-bubble flow visualization technique at a Reynolds number of 24,000.

Moskovitz, Cary A.↗
NASA NTRS1990

Liquid acquisition devices for superfluid helium transfer

To transfer superfluid helium (He II) in the milli-g or micro-g environment in orbit, it is necessary to provide a reasonably steady supply of liquid to the inlet of the pump in the supply dewar. To accomplish this without providing an artificial gravity through acceleration requires a liquid acquisition device. Fluid swirl and electrostatic devices have been proposed to orientate the fluid. However, the simplest mechanisms appear to be the use of surface tension or the thermomechanical effect. This paper examines four concepts for providing He II to the inlet of a thermomechanical pump. The devices are a distributed thermomechanical pump, a distributed pump with a main thermomechanical pump, a screened channel system and a vane/sponge combination. Calculations on the efficiency of these types of liquid acquisition devices are made using laboratory data from tests involving small scale devices where applicable. These calculations show that the latter two types of liquid acquisition devices are the most efficient. Questions as to the probability of cavitation and the effect of the residual shuttle acceleration on their operation remain to be answered, however.

Dipirro, M. J.↗
NASA NTRS1990

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗
NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗
NASA NTRS1991

Technique for calibrating angular measurement devices when calibration standards are unavailable

A calibration technique is proposed that will allow the calibration of certain angular measurement devices without requiring the use of absolute standard. The technique assumes that the device to be calibrated has deterministic bias errors. A comparison device must be available that meets the same requirements. The two devices are compared; one device is then rotated with respect to the other, and a second comparison is performed. If the data are reduced using the described technique, the individual errors of the two devices can be determined.

Finley, Tom D.↗
NASA NTRS1991

The Application of a Cylindrical-spherical Floating Ring Bearing as a Device to Control Stability of Turbogenerators

The development of a new device to control stability of turbogenerators is described. The device comprises a floating ring installed between the journal and bearing housing of a fluid film bearing. The journal and the inner surface of the ring are cylindrical while the outer surface of the ring and bearing surface are spherical providing axial location of the ring and self-alignment of the bearing. The employment of this device would lead to a consistent machine performance. System stability may be controlled by changing a number of bearing and floating ring parameters. This device also offers an additional advantage of having a very low frictional characteristic. A feasibility study was carried out to investigate the suitability of the new device to turbogenerator applications. Both theoretical analysis and experimental observations were carried out. Initial results suggest that the new floating ring device is a competitive alternative to other conventional arrangements.

Leung, P. S.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS1992

Conceptual design of a fleet of autonomous regolith throwing devices for radiation shielding of lunar habitats

This report presents refinements in two areas of the initial design presented in the report entitled 'Conceptual Design of a Fleet of Autonomous Regolith Throwing Devices for Radiation Shielding of Lunar Habitats'. The first section presents an evaluation of the critical areas of the design and presents alternative solutions for these areas. The areas for design refinement are the traction required by the device and the stability of the device when throwing regolith. Several alternative methods are presented to solve these problems. First, the issue of required traction is covered. Next, the design is refined to provide a more stable device. The issue of stability is addressed both by presenting solutions for the configuration chosen for the computer simulation and by presenting two more device configurations. The next section presents the selected solutions. To prevent inadequate traction, the depth of dig-per-pass is reduced. A method combining a dynamic counterweight and an outrigger is chosen to provide a stable device.

Armstrong, Karem↗
NASA NTRS1995

Non-parabolic hydrodynamic formulations for the simulation of inhomogeneous semiconductor devices

Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models can not fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations of the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship (hk)(exp 2)/2m = W(1 + alpha(W)). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(sup y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships: parabolic, Kane dispersion, and power low dispersion.

Smith, Arlynn W.↗
NASA NTRS1999

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 micron, 3C-SiC film grown at 1600 K on a 500 micron-thick, Si substrate. The analysis includes, temperature-dependent properties, shape change due to volume expansion with temperature, and thermal stress caused by differential thermal expansion of different materials. Two designs are considered: type I has anchor locations close to the geometric centroid and a small shuttle; type 11 has a large shuttle with anchors far from the centroid, The resonant frequency decreases approximately 3.5% over a 1000 K temperature increase for the type-I device, and behaves according to theory. The resonant frequency of the type-11 device decreases by 2% over the first 400 K, then rises slightly over the remaining 600 K. This device deviates from theory because of the high thermal stress induced in the beams. The thermal stress is caused by the differential thermal expansion of the suspended element relative to the substrate. The results show that the device geometry must be properly chosen if the resonant frequency of that device will be used to calculate the temperature coefficient of Young's modulus. These results apply only to resonators of one material on a substrate of a different material.

DeAnna, Russell G.↗
NASA NTRS1996

Non-Parabolic Hydrodynamic Formulations for the Simulation of Inhomogeneous Semiconductor Devices

Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models cannot fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations or the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship ((hk)(exp 2)/2m = W(1 + alphaW). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(exp y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships; parabolic, Kane dispersion and power law dispersion.

Smith, A. W.↗
NASA NTRS2001

Computational Hemodynamics Involving Artificial Devices

This paper reports the progress being made towards developing complete blood flow simulation capability in human, especially, in the presence of artificial devices such as valves and ventricular assist devices. Devices modeling poses unique challenges different from computing the blood flow in natural hearts and arteries. There are many elements needed such as flow solvers, geometry modeling including flexible walls, moving boundary procedures and physiological characterization of blood. As a first step, computational technology developed for aerospace applications was extended in the recent past to the analysis and development of mechanical devices. The blood flow in these devices is practically incompressible and Newtonian, and thus various incompressible Navier-Stokes solution procedures can be selected depending on the choice of formulations, variables and numerical schemes. Two primitive variable formulations used are discussed as well as the overset grid approach to handle complex moving geometry. This procedure has been applied to several artificial devices. Among these, recent progress made in developing DeBakey axial flow blood pump will be presented from computational point of view. Computational and clinical issues will be discussed in detail as well as additional work needed.

Kwak, Dochan↗
NASA NTRS2001

Assembly For Moving a Robotic Device Along Selected Axes

An assembly for moving a robotic device along selected axes includes a programmable logic controller (PLC) for controlling movement of the device along selected axes to effect movement of the device to a selected disposition. The PLC includes a plurality of single axis motion control modules, and a central processing unit (CPU) in communication with the motion control modules. A human-machine interface is provided for operator selection of configurations of device movements and is in communication with the CPU. A motor drive is in communication with each of the motion control modules and is operable to effect movement of the device along the selected axes to obtain movement of the device to the selected disposition.

Brentley Craig Nowlin↗
NASA NTRS2003

Portable Wireless LAN Device and Two-way Radio Threat Assessment for Aircraft Navigation Radios

Measurement processes, data and analysis are provided to address the concern for Wireless Local Area Network devices and two-way radios to cause electromagnetic interference to aircraft navigation radio systems. A radiated emission measurement process is developed and spurious radiated emissions from various devices are characterized using reverberation chambers. Spurious radiated emissions in aircraft radio frequency bands from several wireless network devices are compared with baseline emissions from standard computer laptops and personal digital assistants. In addition, spurious radiated emission data in aircraft radio frequency bands from seven pairs of two-way radios are provided, A description of the measurement process, device modes of operation and the measurement results are reported. Aircraft interference path loss measurements were conducted on four Boeing 747 and Boeing 737 aircraft for several aircraft radio systems. The measurement approach is described and the path loss results are compared with existing data from reference documents, standards, and NASA partnerships. In-band on-channel interference thresholds are compiled from an existing reference document. Using these data, a risk assessment is provided for interference from wireless network devices and two-way radios to aircraft systems, including Localizer, Glideslope, Very High Frequency Omnidirectional Range, Microwave Landing System and Global Positioning System. The report compares the interference risks associated with emissions from wireless network devices and two-way radios against standard laptops and personal digital assistants. Existing receiver interference threshold references are identified as to require more data for better interference risk assessments.

Nguyen, Truong X.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS1954

An Investigation in the Ames 40- by 80-Foot Wind Tunnel of a YT-56A Turboprop Engine Incorporating a Decoupler and a Controlled-Feathering Device

An investigation of a decoupler and a controlled-feathering device incorporated with the YT-56A turboprop engine has been made to determine the effectiveness of these devices in reducing the high negative thrust (drag) which accompanies power failure of this type of engine. Power failures were simulated by fuel cut-off, both without either device free to operate, and with each device free to operate singly. The investigation was made through an airspeed range from 50 to 230 mph. It was found that with neither device free to operate, the drag levels realized after power failures at airspeeds above 170 mph would impose vertical tail loads higher than those allowable for the YC-130, the airplane for which the test power package was designed. These levels were reached in approximately one second. The maximum drag realized after power failure was not appreciably altered by the use of the decoupler although the decoupler did put a limit on the duration of the peak drag. The controlled-feathering device maintained a level of essentially zero drag after power failure. The use of the decoupler in the YT-56A engine complicates windmilling air-starting procedures and makes it necessary to place operating restrictions on the engine to assure safe flight at low-power conditions,

Rogallo, Vernon L.↗
NASA NTRS1946

Preliminary Tests of a Buffet Stall-Warning Device on a 1/5-Scale Model of the Republic XP-84 Airplane

During the first flight tests of the Republic XP-84 airplane it was discovered that there was a complete lack of stall warning. A short series of development tests of a suitable stall-warning device for the airplane was therefore made on a 1/5-scale model in the Langley 300 MPH 7- by 10-foot tunnel. Two similar stall-warning devices, each designed to produce early root stall which would provide a buffet warning, were tested. It appeared that either device would give a satisfactory buffet warning in the flap-up configuration, at the cost of an increase of 8 or 10 miles per hour in minimum speed. Although neither device seemed to give a true buffet warning in the flaps-down configuration, it appeared that either device would improve the flaps-down stalling characteristics by lessening the severity of the stall and by maintaining better control at the stall. The flaps-down minimum-speed increase caused by the devices was only 1 or 2 miles per hour.

Tucker, Warren A.↗