Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “DIODE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

System and method for high power diode based additive manufacturing

The present disclosure relates to a system for performing an Additive Manufacturing (AM) fabrication process on a powdered material, deposited as a powder bed and forming a substrate. The system makes use of a laser for generating a laser beam, and an optical subsystem. The optical subsystem is configured to receive the laser beam and to generate an optical signal comprised of electromagnetic radiation sufficient to melt or sinter the powdered material. The optical subsystem uses a digitally controlled mask configured to pattern the optical signal as needed to melt select portions of a layer of the powdered material to form a layer of a 3D part. A power supply and at least one processor are also included for generating a plurality of different power density levels selectable based on a specific material composition, absorptivity and diameter of the powder particles, and a known thickness of the powder bed. The powdered material is used to form the 3D part in a sequential layer-by-layer process.

El-Dasher, Bassem S.↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2024

Perovskite Grown in Gallium Nitride Nanowire Matrix for Stable and High‐Efficiency X‐Ray Detection

High-quality quasi-2D perovskites in a GaN nano-wire matrix are grown to build a 3D hetero-structure for high-performance X-ray sensing. In the 3D hetero-structure, GaN nano-wire matrix serves as an n-type charge collector that can rapidly extract carriers through the bulk film of the perovskite layer. Together with a p-type top electrode, a p–i–n diode with the 3D hetero-structure is built, that exhibits a rectified current–voltage characteristic. After analyzing the interface energy alignment, it is found that the fermi levels of the perovskite and GaN are aligned in the dark, and a quasi-fermi level splits upon illumination, introducing a built-in electrical field at the interface. As a result, strong photo-induced current is observed from the diode without an external field. Finally, the 3D diode for X-ray detection demonstration is used, revealing a sensitivity of 308.9 µC Gy air -1 cm -2 at an exceptionally low applied field of 0.125 V µm -1 . The X-ray-induced signal from the 3D diode is stable after 155 cycles of X-ray irradiation under a constant electric field. This demonstration informs a new 3D architecture for high-performance X-ray sensing, and it shows that GaN is a robust n-type interface for perovskite optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Excessive charge, beam loading, and impedance collapse thresholds for a velvet emitter

Excess emission has been observed from velvet cathodes with total emission times >150 ns. In this diode experiment, we produce a sub-relativistic electron beam with the ability to consistently change γ from 1.2 to 1.5 and β = 0.5–0.75. Electron emission in this particular diode geometry requires electric fields >40 kV/cm. The current increases at steady rates >0.05 A/ns after the head of the pulse, indicating an expansion of the emission surface and reduction in the effective AK gap. Small transients of excess emission (or arcs) are consistently observed for current pulses exceeding 150 ns. The excess emission results in beam loaded levels ≥10 kV on the diode voltage. The effects described here are compounded as diode voltage is increased. The principal objective of these experiments is to quantify electric field emission thresholds, current ramps, excess emission delays, effective beam loading, and impedance collapse.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

STARFIRE – Science and Technology Accelerated Research for Fusion Innovation and Reactor Engineering progress report

The STARFIRE hub leverages foundational science and technology (S&T) research and integrated plant modeling tools to advance Inertial Fusion Energy (IFE). S&T breakthroughs achieved in each thrust are incorporated into an integrated modeling tool to assess and prioritize remaining gaps to bridge for IFE to become viable. Scientific highlights span high-gain target design, diode-pumped solid-state lasers, and innovative target manufacturing. Key highlights include the investigation of shock propagation through various foam structures among other limiting factors of compression of IFE target, exploration of novel 3D printing techniques such as light-sheet additive manufacturing for 2-photon polymerization foams, and diode-pumped solid-state laser architectures required for several IFE approaches. In addition, the STARFIRE team has established two public-private working groups to address laser diode supply chain issues and test advanced laser diode configurations. Finally, a lite version of the integrated modeling tool has been developed to facilitate outreach and engage with private companies. STARFIRE’s management structure has been designed to ensure agile resource allocation, robust performance assessment, and alignment with the broader fusion energy mission. STARFIRE’s breakthroughs are disseminated to the community via reports, presentations, and publications, while agreements with private companies are set in place to protect proprietary information.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Thermal Management of Discretized Heaters Using CuW Microchannel Heat Sinks and FC3283

Single-phase cooling using microchannel heat sinks (MCHS) has become a popular approach for overcoming the thermal challenges associated with high-powered microelectronic devices. Thermal management is one of the largest barriers to higher power densities in electronics and frequently limits overall device performance. The implementation of forced convective cooling via single-phase liquid cooling in MCHS reduces the thermal resistance resulting in lower device temperatures at high-power conditions, which can decrease the package size and extend the lifespan of devices. The goal of the work described in this article was to investigate practical cooling solutions for laser diode bars. This study examined the effectiveness of a copper tungsten (CuW) microchannel heat sink paired with a dielectric coolant (FC3283) for dissipating both discrete and uniform heat fluxes up to 600 W/cm2 across a 0.25-cm2 surface area through a numerical and experimental study. CuW was chosen as the MCHS material because it is thermal expansion matched to GaAs, which is a common laser diode substrate. FC3283 serves as a dielectric coolant that is compatible with power electronics cooling. The microchannels utilized in this work were approximately $365$ $μ$ m deep and $100$ $μ$ m wide resulting in a hydraulic diameter of $160$ $μ$ m. The study investigated the cooling performance across a variety of applied power loads and flow rates to determine optimal effectiveness. The resulting thermal resistance ranged from 0.15 cm2 K/W at the highest flow rate to 0.26 cm2 K/W at the lowest flow rate. Further, the resulting thermal performance from this study demonstrates the importance of considering discrete heat sources separately from uniform heat sources and proved that the unique combination of CuW microchannels with FC3283 can be a promising cooling option toward future advancements of laser diode bars and other high-power microelectronics.

42 ENGINEERING↗
DOE OSTI2025

The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current

The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential ϕ(x) ∝ (x/D) 4/3 , where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and ϕ(x) ∝ (x/D) 3/2 . Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that ϕ(x) ∝ (x/D)ξ for a general collisional gap, where 4/3 ≤ ξ ≤ 3/2 . Furthermore, ξ is strictly a function of νT, where ν is the collision frequency and T is the electron transit time. Using this definition of ξ, we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general ξ asymptotically recovers the CLL as ν → 0 and the MGL as ν → ∞. As a result, matching these limits shows that ξ ≈ 1.40 and V ∝ D 2 ν 2 at the transition from a vacuum to a collisional diode for any device condition.

Anodes↗
DOE OSTI2025

Field deployable trace radioisotope analysis through combined electrochemical and alpha spectroscopy methods

A method for depositing actinides directly onto a 4H-SiC Schottky barrier diode (SBD) detector as a field deployable actinides sensor was developed to enable off-site analysis, shortening the time to obtain critical information such as elements, concentration, and/or isotopic ratio related to the radiological situation. A thin film of Hg was first electrodeposited onto the Pt contact of the SiC diode, followed by chronoamperometric deposition of microgram levels of actinides under conventional control conditions. The 4H-SiC diode maintained consistent functionality through the electrodeposition process and showed resolved alpha-energy spectra that contained accurate isotopic information demonstrating the feasibility of a combined chemical and radiological sensor for field actinide detection and quantification.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2025

Performance of an X-γ ray detection system based on a thick silicon LGAD

We present the performance of a X-γ ray detection systems based on a 300 µm thick silicon low-gain avalanche diode (LGAD) and of an equivalent Diode structure without the gain layer, read-out by a custom-made low-noise charge amplifier. For the LGAD structure, the multiplication gains M s from 10.2 to 19.3 are measured, and the Equivalent Noise Charge (ENC) components have been studied in detail. As expected, a significant reduction of the white and 1/f voltage series and dielectric ENC components is observed with increasing gain, shortening the optimum peaking time to τ = 0.4÷8 μs depending on the gain value, with respect to the standard diode, while the parallel ENC component increases proportionally to the gain up to M s = 15. Setting the gain M s = 12.7, a minimum ENC = 34.5 electrons r.m.s. (298 eV FWHM) at τ = 1 μs is found. However, the electronic noise, evaluated on the pulser FWHM, is found to only marginally contribute to the width of the spectral lines of a radioactive source, which are dominated instead by the statistical noise of the charge multiplication within the LGAD structure. The spectral lines' excess width is found to be proportional to the signal multiplication gain M s and increases with the energy of the photons. A minimum line width of 850 eV FWHM at 13.9 keV is measured at room temperature, τ = 2 μs and a gain M s = 10.2.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

High-Spectral Resolution Lidar (HSRL) Instrument Handbook

High-spectral-resolution lidar (HSRL) systems provide vertical profiles of optical depth, backscatter cross-section, depolarization, and backscatter phase function. All HSRL measurements are calibrated by reference to molecular scattering, which is measured at each point in the lidar profile. Like the Raman lidar (RL), but unlike simple backscatter lidars such as the micropulse lidar (MPL), this enables the HSRL to measure backscatter cross-sections and optical depths without prior assumptions about the scattering properties of the atmosphere. The depolarization observations allow robust discrimination between ice and water clouds. Rigorous error estimates can be computed for all measurements. A very narrow angular field of view reduces multiple scattering contributions. The small field of view, coupled with a narrow optical bandwidth, nearly eliminates noise due to scattered sunlight. The laser transmitter is a diode-pumped, frequency-doubled Nd:YAG laser. Narrow-band, single-frequency operation is provided by injection seeding with a single-frequency, cw-diode-pumped diode laser. The main laser cavity is maintained in resonance with the seed laser by adjusting the cavity length to minimize the time between the Q-switch trigger and the emission of the laser pulse. The emission wavelength is tuned via temperature control of the seed laser crystal and is locked to line #1109 of the iodine absorption spectra. Locking is accomplished by minimizing the transmission through a 2-cm-long iodine absorption cell. Use of a high-repetition-rate laser and expansion of the transmitted beam through a 400-mm telescope reduces the transmitted energy density to eye-safe levels. It is possible to look directly into the output beam without hazard. The receiver and transmitter use the same afocal telescope, simplifying the maintenance of stable alignment of the transmitter and receiver although the angular FOV is only 100 μrad. The small FOV and the 4-kHz repetition rate also limit the near-field signal strength, making it possible to record continuous profiles that start at an altitude of ~100 m and extend to 30 km using photon counting detectors. The small FOV also suppresses multiple scattering contributions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for PN Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

2D/3D integration↗
DOE OSTI2025

Plasmon-enhanced ultralow-threshold solid-state triplet fusion upconversion

Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold I th by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve I th values as low as 3.4 mW cm −2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. As a result, this scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions

We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theoretical response of a silicon Esaki diode. These anomalous behaviors include current suppression at low voltages in the forward-bias response and a much lower valley voltage at cryogenic temperatures than theoretically expected for a silicon diode. To investigate the potential causes of these anomalies, we studied the effects of a few possible transport mechanisms, including band-to-band tunneling, bandgap narrowing, potential impact of non-Ohmic contacts, band quantization, impact of leakage, and inelastic trap-assisted tunneling, through semi-classical simulations. We find that a combination of two sets of band-to-band tunneling (BTBT) parameters can qualitatively approximate the shape of the tunneling current at low bias. This can arise from band quantization and realignment due to the strong potential confinement in δ-layers. We also find that the lower-than-theoretically-expected valley voltage can be attributed to modifications in the electronic band structure within the δ-layer regions, leading to a significant bandgap narrowing induced by the high density of dopants. Finally, we extend our analyses to room temperature operation and predict that trap-assisted tunneling (TAT) facilitated by phonon interactions may become significant, leading to a complex superposition of BTBT and TAT transport mechanisms in the electrical measurements.

band gap↗
DOE OSTI2026

Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga 2 O 3 interfaces

Chromium (Cr) is a common impurity in β-Ga 2 O 3 crystals, where its characteristic R1 and R2 luminescence lines are susceptible to both the host crystal field and externally applied fields. Here, in this work, we demonstrate that the Cr cathodoluminescence (CL) quenches toward the bulk of the crystal but enhances with applied reverse bias, reflecting the effect of free carrier depletion with increasing electric field. Furthermore, we illustrate that the R1/R2 CL intensity ratio, measured as the integrated area ratio of R1 to R2, can be used as a direct probe of the electric field in a Ni-β-Ga 2 O 3 : Cr Schottky diode. This optical calibration method provides a complementary approach to conventional C–V and I–V measurements for determining electric field strength in the depletion region of β-Ga 2 O 3 -based Schottky diodes and can be extended to other semiconductors and multilayer device structures.

36 MATERIALS SCIENCE↗