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At least 127 records · Page 7

Magnetism and superconductivity of some Tl-Cu oxides

Many copper oxide based Thallium compounds are now known. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; i.e., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are found, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance was observed at temperatures as great as 125 K. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) jump, electronic density of states, D(Ef), and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO,120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the Tl-CuO HTSC, but technological aspects are also pointed out.

Datta, Timir↗

Electronic structures of HgTe and CdTe surfaces and HgTe/CdTe interfaces

A Green's-function method has been used to study the surface and interface electronic structures of the II-VI compounds HgTe and CdTe. Localized surface and resonance states near the cation-terminated (100) surface of CdTe and the anion-terminated surface of HgTe have been found for the ideal surfaces. The energies and strengths of these surface states are altered by surface perturbations. The bulk states near the surface are drastically modified by the creation of the surface, but the band gaps remain unchanged. Numerical evaluation of the local densities of states at the Gamma and J points shows that, at the (100) interface of HgTe/CdTe, the previously observed surface states are no longer present. However, in the interface region, bulk states of one material penetrate some distance into the other material.

Schick, J. T.↗

Optical absorption by free holes in heavily doped GaAs

Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

Huberman, M. L.↗

Preparing Quantum Many-Body Scar States on Quantum Computers

Quantum many-body scar states are highly excited eigenstates of many-body systems that exhibit atypical entanglement and correlation properties relative to other eigenstates at the same energy density. Scar states also give rise to infinitely long-lived coherent dynamics when the system is prepared in a special initial state having finite overlap with them. Many models with exact scar states have been constructed, but the fate of scarred eigenstates and dynamics when these models are perturbed is difficult to study with classical computational techniques. In this work, we propose state preparation protocols for individual scar states in a particular model, as well as superpositions of them that give rise to coherent dynamics. For superpositions of scar states, we propose both a linear depth unitary and a finite-depth nonunitary state preparation protocol, the latter of which uses measurement and postselection to reduce the circuit depth. For individual scarred eigenstates, we propose a circuit architecture with polynomial depth. We also provide proof of principle implementations of these protocols on superconducting quantum hardware.

Quantum Computing↗

Desorption Kinetics of O and CO from Graphitic Carbon Surfaces

The desorption of O/CO from graphitic carbon surfaces is investigated using a one-dimensional model describing the adsorbate interactions with the surface phonon bath. The kinetics of desorption are described through the solution of a master equation for the time-dependent population of the adsorbate in an oscillator state, which is modified through thermal fluctuations at the surface. The interaction of the adsorbate with the surface phonons is explicitly captured by using the computed phonon density Of states (PDOS) of the surface. The coupling of the adsorbate with the phonon bath results in the transition of the adsorbate up and down a vibrational ladder. The adsorbate-surface interaction is represented in the model using a Morse potential, which allows for the desorption process to be directly modeled as a transition from bound to free (continuum) state. The PDOS is a property of the material and the lattice; and is highly sensitive to the presence of defects. The effect of etch pits along with random surface defects on the PDOS is considered in the present work. The presence of defects causes a redshift and broadening of the PDOS, which in turn changes the phonon frequency modes available for adsorbate coupling at the surface. Using the realistic PDOS distributions, the phonon-induced desorption (PID) model was used to compute the transition and desorption rates for both pristine and defective systems. Mathissen’s rule is used to compute the phonon relaxation time for pristine and defective systems based on the phonon scattering times for each of the different scattering processes. First, the desorption rates of the pristine system is fitted against the experimental values to obtain the Morse potential parameters for each of the observed adatoms. These Morse potential parameters are used along with the defective PDOS and phonon relaxation time to compute the desorption rates for the defective system. The defective system rates (both transition and desorption) were consistently lower in comparison with the pristine system. The difference between the transition rates is more significant at lower initial states due to higher energy spacing between the levels. In the case of the desorption rates, the difference between the defective and pristine system is more significant at higher temperatures. The desorption rates for each of the system shows an order of magnitude decrease with the strongly bound systems exhibiting the greatest reduction in the desorption rates.

Swaminathan-Gopalan, Krishnan↗

A technique for determining Urbach edge, midgap states and electric field in a-Si:H and a-(Si,Ge):H devices

A technique for measuring the Urbach energy of valence band tail states and midgap defect densities in a-Si:H and a-(Si,Ge):H devices is described. The Urbach energy is determined by measuring the quantum efficiency (QE) of delocalized holes in the devices, whereas the midgap state density (DOS) is estimated by measuring the QE of localized holes. The distinction between delocalized and localized holes is obtained from the behavior of the QE upon the application of reverse bias to the device. The QE of holes localized in midgap states increases significantly upon the application of reverse bias because of Frenkel-Poole tunneling, whereas the QE of holes in tail states does not show such an increase. It is shown that upon light soaking the Urbach edge does not change, but the midgap DOS does increase significantly. A primary consequence of the increase in DOS is a decrease in electric field in the low-field middle i region of the p-i-n cell. The decrease in electric field is experimentally estimated by fitting the increase in the reverse bias QE to Frenkel-Poole tunneling.

Dalal, Vikram L.↗

The anomalous X-ray absorption spectrum of Vela X-1

The HEAO 2 satellite's Solid State Spectrometer and Monitor Proportional Counter was used to observe one orbit of the massive X-ray binary Vela X-1. Using spectral fits to the data as a function of orbital phase, the column density and state of the material along the line of sight to the X-ray source has been inferred. The spectrum near orbital phase 0.2 compares favorably with absorption by neutral material with a column density corresponding to plausible values of stellar wind velocity law and total primary mass loss rate. Spectra at later orbital phases, which show unexpected strong absorption features near 2.0 and 2.5 keV, are interpreted as due to absorption by material with suppressed opacity below 2.0 keV. The opacity required to produce the observed features implies either the presence of an intense soft X-ray flux, or altered elemental abundances in the gas near Vela X-1.

Kallman, T. R.↗

Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma

The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.

Essick, J. M.↗

Electronic Structure of TlBa2CaCu2O(7-Delta)

The core levels of TlBa2CaCu2O(7-delta) (Tl-1212) epitaxial films have been measured with X-ray photoelectron spectroscopy (XPS). The valence electronic structure has been determined using the full-potential linear muffin-tin-orbital band-structure method and measured with XPS. The calculations show that a van Hove singularity (VHS) lies above the Fermi level (E(sub F)) for the stoichiometric compound (delta = 0.5), while for 50% oxygen vacancies in the Tl-O layer (delta = 0.5) E(sub F) is in close proximity to the VHS. Samples annealed in nitrogen (to reduce the hole overdoping by the removal of oxygen) exhibit higher core-level binding energies and a higher T(sub c), consistent with a shift of E(sub F) closer to the VHS. Comparisons are made to the core levels and valence bands of Tl2Ba2CaCu2O(8 + delta)(Tl-2212) and HgBa2CaCu2O)6 + delta) (Hg- 1212). The similarity of the Cu 2p(sub 3/2) spectra for Tl-1212 and Tl-2212 indicates that the number of Tl-O layers has little effect on the Cu-O bonding. However, the Tl-1212 and Hg-1212 Cu 2p(sub 3/2) signals exhibit differences which suggest that the replacement of T(sup 3+) with Hg(sup 2+) results in a decrease in the O 2p right arrow Cu 3d charge-transfer energy and differences in the probabilities of planar vs apical oxygen charge transfer and/or Zhang-Rice singlet-state formation. Differences between the Tl-1212 and the Tl-2212 and Hg-1212 measured valence bands are consistent with the calculated Cu 3d and (Tl,Hg) 6s/5d partial densities of states.

Vasquez, R. P.↗

Radiation pressure-driven shocks in winds from hot stars

The dynamical theory of radiation-pressure-driven shocks in winds from early-type stars is outlined. After the principal parameters needed for a description of these shocks are isolated (speeds relative to incoming material and their column densities), the shocks' principal properties as functions of these parameters are estimated. The special case of time-steady shocks is examined, and calculations are given for density, ionization state, temperature, and flow velocity as functions of position; also calculated are X-ray emissivity, UV line emissivity, and total radiation force as functions of shock velocity and postshock column density.

Krolik, J. H.↗

Magnetism and superconductivity of some Tl-Cu oxides

Many copper oxide based Thallium compounds have now been discovered. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; viz., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are evidenced, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance as high as 125K has been observed. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in the conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) accurate thermal measurement of important parameters such as the sp. heat jump, electronic density of states, D(Ef) and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO, 120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the TlCuO HTSC, but technological aspects are also pointed out.

Datta, Timir↗

Hybrid-PIC Modeling of the Transport of Atomic Boron in a Hall Thruster

Computational analysis of the transport of boron eroded from the walls of a Hall thruster is performed by implementing sputter yields of hexagonal boron nitride and velocity distribution functions of boron within the hybrid-PIC model HPHall. The model is applied to simulate NASA's HiVHAc Hall thruster at a discharge voltage of 500V and discharge powers of 1-3 kW. The number densities of ground- and 4P-state boron are computed. The density of ground-state boron is shown to be a factor of about 30 less than the plasma density. The density of the excited state is shown to be about three orders of magnitude less than that of the ground state, indicating that electron impact excitation does not significantly affect the density of ground-state boron in the discharge channel or near-field plume of a Hall thruster. Comparing the rates of excitation and ionization suggests that ionization has a greater influence on the density of ground-state boron, but is still negligible. The ground-state boron density is then integrated and compared to cavity ring-down spectroscopy (CRDS) measurements for each operating point. The simulation results show good agreement with the measurements for all operating points and provide evidence in support of CRDS as a tool for measuring Hall thruster erosion in situ.

Materials Engineering↗

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Lord, Kenneth↗

Rao-Blackwellization for Adaptive Gaussian Sum Nonlinear Model Propagation

When dealing with imperfect data and general models of dynamic systems, the best estimate is always sought in the presence of uncertainty or unknown parameters. In many cases, as the first attempt, the Extended Kalman filter (EKF) provides sufficient solutions to handling issues arising from nonlinear and non-Gaussian estimation problems. But these issues may lead unacceptable performance and even divergence. In order to accurately capture the nonlinearities of most real-world dynamic systems, advanced filtering methods have been created to reduce filter divergence while enhancing performance. Approaches, such as Gaussian sum filtering, grid based Bayesian methods and particle filters are well-known examples of advanced methods used to represent and recursively reproduce an approximation to the state probability density function (pdf). Some of these filtering methods were conceptually developed years before their widespread uses were realized. Advanced nonlinear filtering methods currently benefit from the computing advancements in computational speeds, memory, and parallel processing. Grid based methods, multiple-model approaches and Gaussian sum filtering are numerical solutions that take advantage of different state coordinates or multiple-model methods that reduced the amount of approximations used. Choosing an efficient grid is very difficult for multi-dimensional state spaces, and oftentimes expensive computations must be done at each point. For the original Gaussian sum filter, a weighted sum of Gaussian density functions approximates the pdf but suffers at the update step for the individual component weight selections. In order to improve upon the original Gaussian sum filter, Ref. [2] introduces a weight update approach at the filter propagation stage instead of the measurement update stage. This weight update is performed by minimizing the integral square difference between the true forecast pdf and its Gaussian sum approximation. By adaptively updating each component weight during the nonlinear propagation stage an approximation of the true pdf can be successfully reconstructed. Particle filtering (PF) methods have gained popularity recently for solving nonlinear estimation problems due to their straightforward approach and the processing capabilities mentioned above. The basic concept behind PF is to represent any pdf as a set of random samples. As the number of samples increases, they will theoretically converge to the exact, equivalent representation of the desired pdf. When the estimated qth moment is needed, the samples are used for its construction allowing further analysis of the pdf characteristics. However, filter performance deteriorates as the dimension of the state vector increases. To overcome this problem Ref. [5] applies a marginalization technique for PF methods, decreasing complexity of the system to one linear and another nonlinear state estimation problem. The marginalization theory was originally developed by Rao and Blackwell independently. According to Ref. [6] it improves any given estimator under every convex loss function. The improvement comes from calculating a conditional expected value, often involving integrating out a supportive statistic. In other words, Rao-Blackwellization allows for smaller but separate computations to be carried out while reaching the main objective of the estimator. In the case of improving an estimator's variance, any supporting statistic can be removed and its variance determined. Next, any other information that dependents on the supporting statistic is found along with its respective variance. A new approach is developed here by utilizing the strengths of the adaptive Gaussian sum propagation in Ref. [2] and a marginalization approach used for PF methods found in Ref. [7]. In the following sections a modified filtering approach is presented based on a special state-space model within nonlinear systems to reduce the dimensionality of the optimization problem in Ref. [2]. First, the adaptive Gaussian sum propagation is explained and then the new marginalized adaptive Gaussian sum propagation is derived. Finally, an example simulation is presented.

state estimation↗

New heterojunction LWIR detector options

Researchers investigate the heterojunction internal photoemission (HIP) approach that potentially offers long wavelength infrared (LWIR) photovoltaic detector performance (single pixel) that is competitive with the best of other approaches being considered. Most significantly, this approach offers a relatively simple device technology that promises producible and uniform FPA's. Researchers emphasize an exciting process based on intervalence band absorption. They investigate both III-V and Si-based heterojunctions grown by molecular beam epitaxy (MBE) in which the barrier can be tailored to the desired cutoff wavelength. In addition, MBE allows one to optimize the device structure with precise control of doping profiles and layer thicknesses, and perform band structure engineering by control of composition and heterojunction strain. Researchers also consider free carrier absorption in heterojunctions. Acceptable absorption coefficients can be achieved in very heavily n(exp +) doped semiconductor layers (approx. equals 10(exp 20)cm(exp -3). However, in this case the appreciable filling of conduction band states leads to a Schottky-like photoresponse with a gradual (quadratic) turn-on above threshold. A more satisfactory approach would be to use p(exp +) doping so that with the higher density of states in the heavy hole valence band there would be a narrow band of occupied states. This gives the desirable effect of a more rapid (linear) turn-on above threshold. Unfortunately, the higher hole effective mass also reduces (inversely) the free carrier absorption. For this and other reasons, the intervalence band absorption process looks much more promising.

Maserjian, Joseph↗

X-Ray Photoemission Measurements of La(1-x)Ca(x)CoO3(x = 0, 0.5)

X-ray photoemission measurements of the core levels and valence electronic structure of LaCoO3 and La(0.5)Ca(0.5)CoO3 high quality epitaxial films are presented. Shifts of the core levels and main valence band features are consistent with a doping-induced change in the chemical potential. Oxygen states are found to significantly contribute to a peak in the valence band at 1 eV binding energy, verifying earlier results of cluster calculations. A Fermi level crossing of this same band upon doping is observed, yielding a high Fermi level density of states.

Vasquez, R. P.↗

Age-related decrements in bone mineral density in women over 65

Age-related changes in bone density contribute to the risk of fractures. To describe the relationship between age and bone mass in elderly women, we studied a large cohort of women over age 65 years who were recruited from population-based lists in four cities in the United States. Bone density in g/cm2 was measured by single-photon absorptiometry (SPA) and dual x-ray absorptiometry (DXA) at the distal and proximal radius, the calcaneus, the lumbar spine, and the proximal femur. Centralized data collection was used to control data quality and consistency. We found a strong inverse relationship between bone density and age for most sites. Decrements in bone density between women aged 65-69 years and women 85 years and older exceeded 16% in all regions except the spine, where the difference between the two age groups was 6%. Ward's triangle and the calcaneus exhibited the largest decrements, with 26 and 21%, respectively. The estimates of annual changes in bone mineral density by linear regression at sites other than the spine ranged from -0.82% at the femoral neck and trochanter to -1.30% at Ward's triangle. Correlations between the different regions ranged from r = 0.51 between the proximal radius and Ward's triangle to r = 0.66 between the distal radius and calcaneus. We conclude that the inverse relationship between age and bone mass measured by absorptiometry techniques in white women continues into the ninth decade of life. The relationship is strongest for bone density of Ward's triangle and the calcaneus and weakest for the spine.

NASA Discipline Musculoskeletal↗

Auger Spectroscopy of Hydrogenated Diamond Surfaces

An energy shift and a change of the line shape of the carbon core-valence-valence Auger spectra are observed for diamond surfaces after their exposure to an electron beam, or annealing at temperatures higher then 950 C. The effect is studied for both natural diamond crystals and chemical-vapor-deposited diamond films. A theoretical model is proposed for Auger spectra of hydrogenated diamond surfaces. The observed changes of the carbon Auger line shape are shown to be related to the redistribution of the valence-band local density of states caused by the hydrogen desorption from the surface. One-electron calculation of Auger spectra of diamond surfaces with various hydrogen coverages are presented. They are based on self-consistent wave functions and matrix elements calculated in the framework of the local-density approximation and the self-consistent linear muffin-tin orbital method with static core-hole effects taken into account. The major features of experimental spectra are explained.

Krainsky, I. L.↗