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Snow crystals were grown onboard the space shuttle during STS-7 and STS-8 to facilitate the investigation of crystal growth under conditions of weightlessness. The experimental design and hardware are described. Space-grown snow crystals were polyhedrons looking like spheres, which were unlike snow crystals produced in experiments on Earth.
Kubota and Mullin (1995) devised a simple model to account for the effects of impurities on crystal growth of small inorganic and organic molecules in aqueous solutions. Experimentally, the relative step velocity and crystal growth of these molecules asymptotically approach zero or non-zero values with increasing concentrations of impurities. Alternatively, the step velocity and crystal growth can linearly approach zero as the impurity concentration increases. The Kubota-Mullin model assumes that the impurity exhibits Langmuirian adsorption onto the crystal surface. Decreases in step velocities and subsequent growth rates are related to the fractional coverage (theta) of the crystal surface by adsorbed impurities; theta = Kx / (I +Kx), x = mole fraction of impurity in solution. In the presence of impurities, the relative step velocity, V/Vo, and the relative growth rate of a crystal face, G/Go, are proposed to conform to the following equations: V/Vo approx. = G/Go = 1 - (alpha)(theta). The adsorption of impurity is assumed to be rapid and in quasi-equilibrium with the crystal surface sites available. When the value of alpha, an effectiveness factor, is one the growth will asymptotically approach zero with increasing concentrations of impurity. At values less than one, growth approaches a non-zero value asymptotically. When alpha is much greater than one, there will be a linear relationship between impurity concentration and growth rates. Kubota and Mullin expect alpha to decrease with increasing supersaturation and shrinking size of a two dimensional nucleus. It is expected that impurity effects on protein crystal growth will exhibit behavior similar to that of impurities in small molecule growth. A number of proteins were added to purified chicken egg white lysozyme, the effect on crystal nucleation and growth assessed.
The need is addressed for an automated Protein Crystal Growth experiment on the Space Station and how robotics will be integrated into the system design. This automated laboratory system will enable several hundred protein crystals to grow simultaneously in microgravity and will allow the major variables in protein crystal growth to be monitored and controlled during the experiment. Growing good quality crystals is important in determining the complete structure of the protein by X-ray diffraction. This information is useful in the research and development of medicines and other important medical and biotechnological products. Previous Protein Crystal Growth experiments indicate that the microgravity environment of space allows larger crystals of higher quality to be grown as compared to the same crystals grown on the ground. It is therefore important to have a laboratory in space where protein crystals can be grown under carefully controlled conditions so that a crystal type can be reproduced as needed.
We present an innovative design of a vertical transparent multizone furnace which can operate in the temperature range of 25 C to 750 C and deliver thermal gradients of 2 C/cm to 45 C/cm for the commercial applications to crystal growth. The operation of the eight zone furnace is based on a self-tuning temperature control system with a DC power supply for optimal thermal stability. We show that the desired thermal profile over the entire length of the furnace consists of a functional combination of the fundamental thermal profiles for each individual zone obtained by setting the set-point temperature for that zone. The self-tuning system accounts for the zone to zone thermal interactions. The control system operates such that the thermal profile is maintained under thermal load, thus boundary conditions on crystal growth ampoules can be predetermined prior to crystal growth. Temperature profiles for the growth of crystals via directional solidification, vapor transport techniques, and multiple gradient applications are shown to be easily implemented. The unique feature of its transparency and ease of programming thermal profiles make the furnace useful in scientific and commercial applications for determining the optimized process parameters for crystal growth.
The crystal growth, device processing and device related properties and phenomena of GaAs are investigated. Our GaAs research evolves about these key thrust areas. The overall program combines: (1) studies of crystal growth on novel approaches to engineering of semiconductor materials (i.e., GaAs and related compounds); (2) investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; (3) investigation of electronic properties and phenomena controlling device applications and device performance. The ground based program is developed which would insure successful experimentation with and eventually processing of GaAs in a near zero gravity environment.
We present an innovative design of a vertical transparent multizone furnace which can operate in the temperature range of 25 C to 750 C and deliver thermal gradients of 2 C/cm to 45 C/cm for the commercial applications to crystal growth. The operation of the eight zone furnace is based on a self-tuning temperature control system with a DC power supply for optimal thermal stability. We show that the desired thermal profile over the entire length of the furnace consists of a functional combination of the fundamental thermal profiles for each individual zone obtained by setting the set-point temperature for that zone. The self-tuning system accounts for the zone to zone thermal interactions. The control system operates such that the thermal profile is maintained under thermal load, thus boundary conditions on crystal growth ampoules can be predetermined prior to crystal growth. Temperature profiles for the growth of crystals via directional solidification, vapor transport techniques, and multiple gradient applications are shown to be easily implemented. The unique feature of its transparency and ease of programming thermal profiles make the furnace useful for scientific and commercial applications for the determination of process parameters to optimize crystal growth conditions.
To uncover the critical mechanisms responsible for mesoscopic level development during flow-mediated crystal growth, we develop a semi-two-way hydrodynamic coupled structural phase-field crystal formalism (HXPFC-s2). The new formalism, inspired by previous attempts at coupling hydrodynamic and phase-field crystal (PFC) equations, allows for studying mesoscopic flow-mediated crystallization at diffusive timescales pertinent to industrial applications. Unlike previous efforts, the devised coupling to the structural PFC (XPFC) equations allows generalization to more complex crystal structures through explicit parameterization of the direct correlation function (DCF). Utilizing the HXPFC-s2 formalism, we seek to uncover the determinant physical mechanisms in crystallization under simple shear flows by comparing temperature-driven crystallization to flow-mediated crystallization under varying flow-strengths. Parallels and deviations of under-cooling and flow-strength effects on crystal growth are drawn using the crystal cluster-size and system ordering time evolutions. In doing so, we identify scaling behaviors with a Peclet-like number, Pe∼, a critical Peclet-like number, Pe∼*, and flow-field-crystal plane-dependent interactions. Our findings may be relevant for controlling crystal growth and phase behaviors in flow applications.
The fluid mechanics associated with crystal growth processes on centrifuges is modeled using 2D and 3D models. Two-dimensional calculations show that flow bifurcations exist in such crystal growth configurations where the ampoule is oriented in the same direction as the resultant gravity vector and a temperature gradient is imposed on the melt. A scaling analysis is formulated to predict the flow transition point from the natural convection dominated regime to the Coriolis force dominated regime. Results of 3D calculations are presented for two thermal configurations of the crystal growth cell: top heated and bottom heated with respect to the centrifugal acceleration. In the top heated configuration, a substantial reduction in the convection intensity within the melt can be attained by centrifuge operations, and close to steady diffusion-limited thermal conditions can be achieved over a narrow range of the imposed microgravity level. In the bottom heated configuration the Coriolis force has a stabilizing effect on fluid motion by delaying the onset of unsteady convection.
Theoretical and experimental work reported relates to the effects of near-zero gravity on growths of crystals and metallic whiskers during Skylab and Apollo flight experiments. Studies on growth and characterization of candidate materials for flight experiments cover indium-bismuth compounds, bismuth single crystals, gallium arsenide films and single crystals, and cadmium whiskers.
This flight definition project has the specific objective of investigating the kinetics of nucleation and crystal growth in high temperature inorganic oxide, glass forming melts in microgravity. It is related to one1 of our previous NASA projects that was concerned with glass formation for high temperature containerless melts in microgravity. The previous work culminated in two experiments which were conducted aboard the space shuttle in 1983 and 1985 and which consisted of melting (at 1500 C) and cooling levitated 6 to 8 mm diameter spherical samples in a Single Axis Acoustic Levitator (SAAL) furnace. Compared to other types of materials, there have been relatively few experiments, 6 to 8, conducted on inorganic glasses in space. These experiments have been concerned with mass transport (alkali diffusion), containerless melting, critical cooling rate for glass formation, chemical homogeneity, fiber pulling, and crystallization of glass forming melts. One of the most important and consistent findings in all of these experiments has been that the glasses prepared in microgravity are more resistant to crystallization (better glass former) and more chemically homogeneous than equivalent glasses made on earth (1g). The chemical composition of the melt appears relatively unimportant since the same general results have been reported for oxide, fluoride and chalcogenide melts. These results for space-processed glasses have important implications, since glasses with a higher resistance to crystallization or higher chemical homogeneity than those attainable on earth can significantly advance applications in areas such as fiber optics communications, high power laser glasses, and other photonic devices where glasses are the key functional materials. The classical theories for nucleation and crystal growth for a glass or melt do not contain any parameter that is directly dependent upon the g-value, so it is not readily apparent why glasses prepared in microgravity should be more resistant to crystallization than equivalent glasses prepared on earth. Similarly, the gravity-driven convection in a fluid melt is believed to be the primary force field that is responsible for melt homogenization on earth. Thus, it is not obvious why a glass prepared in space, where gravity-driven convection is ideally absent, would be more chemically homogeneous than a glass identically prepared on earth. The primary objective of the present research is to obtain experimental data for the nucleation rate and crystal growth rate for a well characterized silicate melt (lithium disilicate) processed entirely in space (low gravity) and compare these rates with the nucleation and crystal growth rates for a similar glass prepared identically on earth (1g).
Crystal growth of 2H silicon carbide showing temperature profile along susceptor as affecting factor
In one embodiment, a crystallization and screening plate comprises a plurality of cells open at a top and a bottom, a frame that defines the cells in the plate, and at least two films. The first film seals a top of the plate and the second film seals a bottom of the plate. At least one of the films is patterned to strongly pin the contact lines of drops dispensed onto it, fixing their position and shape. The present invention also includes methods and other devices for manual and high-throughput protein crystal growth.
The mechanism of non-congruent growth of a crystal from glass has been sought using molecular dynamics simulations. Specifically, as a model of this process, the growth of a lithium niobate (LiNbO 3 ) crystal seed sandwiched between two lithium niobosilicate (LNS) glass slabs has been simulated as a function of time and temperature. The growth of pre-existing crystal is strongly affected by the orientation of crystal seed, temperature, and the SiO 2 concentration in the surrounding LNS glass matrix. The orientation of LiNbO 3 seed surface that has inherently larger interplanar distance results in a relatively slower crystal growth. The addition of SiO 2 to LNS system significantly decreases the crystal growth, which primarily occurs in the region devoid of Si. The suppressive effect of SiO 2 on growth rate can be traced to the existence of defect complex comprising of Si substituted at the Nb site and a nearby Nb vacancy.
The primary, long-range goals are the development of vapor phase crystal growth experiments, and the growth of technologically useful crystals in space. The necessary ground-based studies include measurements of the effects of temperature variations on the mass flux and crystal morphology in vapor-solid growth processes. For in-situ mass flux measurements dynamic microbalance techniques will be employed. Crystal growth procedures and equipment will be developed to be compatible with microgravity conditions and flight requirements. Emphasis was placed on the further development of crystal growth and the investigation of relevant transport properties of CdTe. The dependence of the mass flux on source temperature was experimentally established. The CdTe synthesis and pretreatment procedures are being developed that yield considerable improvements in mass transport rates, and mass fluxes which are independent of the amount of source material. A higher degree of stoichiometric control of CdTe than before was achieved during this period of investigation. Based on this, a CdTe crystal growth experiment, employing physical vapor transport, yielded very promising results. Optical microscopy and X-ray diffraction studies revealed that the boule contained several large sized crystal grains of a high degree of crystallinity. Further characterization studies of CdTe crystals are in progress. The reaction chamber, furnace dimensions, and ampoule location of the dynamic microbalance system were modified in order to minimize radiation effects on the balance performance.
In this study, a crystal growth technique was developed for the family of intermetallic, magnetoresponsive RE 5 (Si 1-x Ge x ) 4 alloys in order to access the intrinsic and anisotropic properties. Initial bulk properties measured on polycrystalline samples alluded to the properties being obscured or averaged and high-quality, well-characterized, single crystals would clarify this. Successful crystal growth led to development of oriented sample preparation techniques specific for the crystal structures (monoclinic and orthorhombic) and mechanical properties (hard and brittle) of these alloys, and customized for the various measurement techniques undertaken. Here we describe our journey, sometimes circuitous, from crystal growth to sample preparation and cite the scientific discoveries that came about as a result.
Measurement requirements and candidates for measuring crystal growth in space are described, emphasizing holographic instrumentation. Existing instrumentation planned for the IML-1 Spaceflight is described along with advanced concepts for future application which incorporate diode lasers, fiber optics, and holographic optical elements. Particle image displacement velocimetry in crystal growth chambers is described.
An attempt is made to unify the current state of knowledge in crystal growth techniques and fluid mechanics. After identifying important fluid dynamic problems for such representative crystal growth processes as closed tube vapor transport, open reactor vapor deposition, and the Czochralski and floating zone melt growth techniques, research results obtained to date are presented. It is noted that the major effort to date has been directed to the description of the nature and extent of bulk transport under realistic conditions, where bulk flow determines the heat and solute transport which strongly influence the temperature and concentration fields in the vicinity of the growth interface. Proper treatment of near field, or interface, problems cannot be given until the far field, or global flow, involved in a given crystal growth technique has been adequately described.
The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.