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At least 127 records · Page 7

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗

Processing of strong flux trapping high T(subc) oxide superconductors: Center director's discretionary fund

Magnetic suspension effect was first observed in samples of YBa2Cu3O7/AgO(Y-123/AgO) composites. Magnetization measurements of these samples show a much larger hysteresis which corresponds to a large critical current density. In addition to the Y-123AgO composites, recently similar suspension effects in other RE-123/AgO, where RE stands for rare-Earth elements, were also observed. Some samples exhibit even stronger flux pinning than that of the Y-123/AgO sample. An interesting observation was that in order to form the composite which exhibits strong flux trapping effect the sintering temperature depends on the particular RE-123 compound used. The paper presents the detailed processing conditions for the formation of these RE-123/AgO composites, as well as the magnetization and critical field data.

Wu, M. K.↗

A Dry-Etch Process for Low Temperature Superconducting Transition Edge Sensors for Far Infrared Bolometer Arrays

The next generation of ultra-low power bolometer arrays, with applications in far infrared imaging, spectroscopy and polarimetry, utilizes a superconducting bilayer as the sensing element to enable SQUID multiplexed readout. Superconducting transition edge sensors (TES s) are being produced with dual metal systems of superconductinghormal bilayers. The transition temperature (Tc) is tuned by altering the relative thickness of the superconductor with respect to the normal layer. We are currently investigating MoAu and MoCu bilayers. We have developed a dry-etching process for MoAu TES s with integrated molybdenum leads, and are working on adapting the process to MoCu. Dry etching has the advantage over wet etching in the MoAu system in that one can achieve a high degree of selectivity, greater than 10, using argon ME, or argon ion milling, for patterning gold on molybdenum. Molybdenum leads are subsequently patterned using fluorine plasma.. The dry-etch technique results in a smooth, featureless TES with sharp sidewalls, no undercutting of the Mo beneath the normal metal, and Mo leads with high critical current. The effects of individual processing parameters on the characteristics of the transition will be reported.

Allen, Christine A.↗

High-Temperature Superconducting/Ferroelectric, Tunable Thin-Film Microwave Components

At the NASA Lewis Research Center, ferroelectric films such as SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3, are being used in conjunction with YBa(sub 2)Cu(sub 3)O(sub 7-delta) high-temperature superconducting thin films to fabricate tunable microwave components such as filters, phase shifters, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a direct-current electric field, as well as on the low microwave losses of high-temperature superconductors relative to their conventional conductor counterparts. For example, the surface resistance for a YBa(sub 2)Cu(sub 3)O(sub 7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper or gold at the same temperature and frequency. SrTiO3 and Ba(sub x)Sr(sub 1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa(sub 2)Cu(sub 3)O(sub 7-delta), thus enabling the growth of highly textured YBa(sub 2)Cu(sub 3)O(sub 7-delta) films with high critical current densities (i.e., greater than 1 MA/sq cm) on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa(sub 2)Cu(sub 3)O(sub 7-delta) film.

Miranda, Felix A.↗

High-Density Superconducting Cables for Advanced ACTPol

Advanced ACTPol (AdvACT) is an upcoming Atacama Cosmology Telescope (ACT) receiver upgrade, scheduled to deploy in 2016, that will allow measure- ment of the cosmic microwave background polarization and temperature to the highest precision yet with ACT. The AdvACT increase in sensitivity is partly provided by an increase in the number of transition-edge sensors (TESes) per array by up to a factor of two over the current ACTPol receiver detector arrays. The high-density AdvACT TES arrays require 70 μ m pitch superconducting flexible cables (flex) to connect the detec- tor wafer to the first-stage readout electronics. Here, we present the flex fabrication process and test results. For the flex wiring layer, we use a 400-nm-thick sputtered alu- minum film. In the center of the cable, the wiring is supported by a polyimide substrate, which smoothly transitions to a bare (uncoated with polyimide) silicon substrate at the ends of the cable for a robust wedge wire-bonding interface. Tests on the first batch of flex made for the first AdvACT array show that the flex will meet the requirements for AdvACT, with a superconducting critical current above 1 mA at 500 mK, resilience to mechanical and cryogenic stress, and a room temperature yield of 97%.

transition-edge sensors (TESes)↗

A Protoflight Lightweight Surface Manipulation System to Enable High-Load, Long-Reach Lunar Surface Operations

There is a current critical need under the Artemis program for a versatile, high-load, long reach manipulation system that can provide payload offloading and handling for lunar landers. The Lightweight Surface Manipulation System (LSMS) is a highly structurally efficient, long-reach robotic arm that can be sized for a wide range of missions and payload ranges. The LSMS has more than a decade of heritage and testing at NASA Langley Research Center (LaRC), including laboratory and field testing of multiple end-effector tools and operational scenarios. With the need for rapid development of a flight-proven offloading capability and the desire to have that device be reusable for future missions and services, a 4-year program was initiated this year under NASA’s Space Technology Mission Directorate, to develop and build a protoflight unit of the LSMS, capable of lifting 1,000 kg on the Moon at an 8-meter reach. The target mission is to fly on a large cargo lander as a technology demonstrator to validate self-leveling, deployment, and payload handling operations, with future flights adding additional tools and capabilities. This paper provides a summary of the prior decade of work on the LSMS, the current mission drivers and goals, and details the first year of development of the LSMS toward a protoflight unit.

LSMS↗

A Protoflight Lightweight Surface Manipulation System to Enable High-Load, Long-Reach Lunar Surface Operations

There is a current critical need under the Artemis program for a versatile, high-load, long reach manipulation system that can provide payload offloading and handling for lunar landers. The Lightweight Surface Manipulation System (LSMS) is a highly structurally efficient, long-reach robotic arm that can be sized for a wide range of missions and payload ranges. The LSMS has more than a decade of heritage and testing at NASA Langley Research Center (LaRC), including laboratory and field testing of multiple end-effector tools and operational scenarios. With the need for rapid development of a flight-proven offloading capability and the desire to have that device be reusable for future missions and services, a 4-year program was initiated this year under NASA’s Space Technology Mission Directorate, to develop and build a protoflight unit of the LSMS, capable of lifting 1,000 kg on the Moon at an 8-meter reach. The target mission is to fly on a large cargo lander as a technology demonstrator to validate self-leveling, deployment, and payload handling operations, with future flights adding additional tools and capabilities. This paper provides a summary of the prior decade of work on the LSMS, the current mission drivers and goals, and details the first year of development of the LSMS toward a protoflight unit.

lunar surface↗

Superconducting properties as a function of thickness in NbN films.

Measurement of the superconducting properties of NbN films prepared by a high purity reactive sputtering process. The transition temperature was found to decrease with decreasing film thickness, while in contrast the critical current vs magnetic field was largely independent of film thickness and even slightly increased when the film thickness went down to 100 A. The average resistivity of the NbN films was 1000 microohm-cm.

Gavaler, J. R.↗

Weakly superconducting, thin-film structures as radiation detectors.

Measurements were taken with weakly superconducting quantum structures of the Notarys-Mercereau type, representing a thin superconductor film with a short region that is weakened in the sense that its transition temperature is lower than in the remaining portion of the film. The structure acts as a superconducting relaxation oscillator in which the supercurrent increases with time until the critical current of the weakened section is attained, at which moment the supercurrent decays and the cycle repeats. Under applied radiation, a series of constant-voltage steps appears in the current-voltage curve, and the size of the steps varies periodically with the amplitude of applied radiation. Measurements of the response characteristics were made in the frequency range of 10 to 450 MHz.

Kirschman, R. K.↗

Pulsed electromagnetic gas acceleration

Terminal voltage measurements with long cathodes in a high power, quasi-steady MPD discharge show that the critical current for the onset of voltage fluctuations, which was previously shown to be a function of cathode area, approaches an asymptote for cathodes of very large surface area. Floating potential measurements and photographs of the discharge luminosity indicate that the fluctuations are confined to the vicinity of the cathode and hence reflect a cathode emission process rather than a fundamental limit on MPD performance. Photoelectric measurements of particular argon neutral and ion transitions show that the higher electronic states are populated more heavily than would be calculated on the basis of Saha-Boltzmann equilibrium at the local electron temperature and number density. Preliminary optical depth measurements show that for a current of 4 kA and an argon mass flow of 12 g/sec, a population inversion exists between the upper and lower states of the 4880 A argon ion transition.

Jahn, R. G.↗