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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Overcoming the Critical Shortage of STEM - Prepared Secondary Students Through Modeling and Simulation

In developing understanding of technological systems - modeling and simulation tools aid significantly in the learning and visualization processes. In design courses we sketch , extrude, shape, refine and animate with virtual tools in 3D. Final designs are built using a 3D printer. Aspiring architects create spaces with realistic materials and lighting schemes rendered on model surfaces to create breathtaking walk-throughs of virtual spaces. Digital Electronics students design systems that address real-world needs. Designs are simulated in virtual circuits to provide proof of concept before physical construction. This vastly increases students' ability to design and build complex systems. We find students using modeling and simulation in the learning process, assimilate information at a much faster pace and engage more deeply in learning. As Pre-Engineering educators within the Career and Technical Education program at our school division's Technology Academy our task is to help learners in their quest to develop deep understanding of complex technological systems in a variety of engineering disciplines. Today's young learners have vast opportunities to learn with tools that many of us only dreamed about a decade or so ago when we were engaged in engineering and other technical studies. Today's learner paints with a virtual brush - scenes that can aid significantly in the learning and visualization processes. Modeling and simulation systems have become the new standard tool set in the technical classroom [1-5]. Modeling and simulation systems are now applied as feedback loops in the learning environment. Much of the study of behavior change through the use of feedback loops can be attributed to Stanford Psychologist Alfred Bandura. "Drawing on several education experiments involving children, Bandura observed that giving individuals a clear goal and a means to evaluate their progress toward that goal greatly increased the likelihood that they would achieve it."

Spencer, Thomas↗
NASA NTRS1991

Simulation and measurement of melting effects on metal sheets caused by direct lightning strikes

Direct lightning strikes melt metal parts of various systems, like fuel and propellant tanks of rockets and airplanes, at the point of strike. Responsible for this melting are the impulse current and, if occurring, the long duration current, both carrying a remarkable charge Q. For studying these meltings the simulation in the laboratory has to be based on the parameters of natural lightnings. International standards exist defining certain threat levels of natural lightnings and giving possible generator circuits for the simulation. The melting caused by both types of lightning currents show different appearance. Their characteristics, their differences in melting and heating of metal sheets are investigated. Nevertheless the simulation of lightning in the laboratory is imperfect. While natural lightning is a discharge without a counter electrode, the simulation always demands a close counter electrode. The influence of this counter electrode is studied.

Kern, Alexander↗
NASA NTRS1993

Implementation of interconnect simulation tools in spice

Accurate computer simulation of high speed digital computer circuits and communication circuits requires a multimode approach to simulate both the devices and the interconnects between devices. Classical circuit analysis algorithms (lumped parameter) are needed for circuit devices and the network formed by the interconnected devices. The interconnects, however, have to be modeled as transmission lines which incorporate electromagnetic field analysis. An approach to writing a multimode simulator is to take an existing software package which performs either lumped parameter analysis or field analysis and add the missing type of analysis routines to the package. In this work a traditionally lumped parameter simulator, SPICE, is modified so that it will perform lossy transmission line analysis using a different model approach. Modifying SPICE3E2 or any other large software package is not a trivial task. An understanding of the programming conventions used, simulation software, and simulation algorithms is required. This thesis was written to clarify the procedure for installing a device into SPICE3E2. The installation of three devices is documented and the installations of the first two provide a foundation for installation of the lossy line which is the third device. The details of discussions are specific to SPICE, but the concepts will be helpful when performing installations into other circuit analysis packages.

Satsangi, H.↗
NASA NTRS1973

Washout circuit design for multi-degrees-of-freedom moving base simulators.

A mathematical framework is presented for designing logic to accept motion-dependent parameters from a simulation, attenuating them ('washing them out'), and generating appropriately limited drive signals. This framework is sufficiently general to encompass six-degree-of-freedom simulators with large motion capability. Emphasis is placed on preserving certain motion cue relations (such as those that would be observed in coordinated flight). Strategies for simulating side forces via tilts are shown. Finally, several specific circuits are shown. These circuits have proven to be readily adaptable to a variety of moving-base simulators.

Conrad, B.↗
NASA NTRS2016

First-Order SPICE Modeling of Extreme-Temperature 4H-SiC JFET Integrated Circuits

A separate submission to this conference reports that 4H-SiC Junction Field Effect Transistor (JFET) digital and analog Integrated Circuits (ICs) with two levels of metal interconnect have reproducibly demonstrated electrical operation at 500 C in excess of 1000 hours. While this progress expands the complexity and durability envelope of high temperature ICs, one important area for further technology maturation is the development of reasonably accurate and accessible computer-aided modeling and simulation tools for circuit design of these ICs. Towards this end, we report on development and verification of 25 C to 500 C SPICE simulation models of first order accuracy for this extreme-temperature durable 4H-SiC JFET IC technology. For maximum availability, the JFET IC modeling is implemented using the baseline-version SPICE NMOS LEVEL 1 model that is common to other variations of SPICE software and importantly includes the body-bias effect. The first-order accuracy of these device models is verified by direct comparison with measured experimental device characteristics.

JFET↗
NASA NTRS1977

Op-amp Gyrator Simulates High Q Inductor

Gyrator circuit consisting of dual operational amplifier and four resistors inverts impedance of capacitor to simulate inductor. Synthetic inductor has high Q factor, good stability, wide bandwidth, and easily determined value of inductance that is independent of frequency. It readily lends itself to integrated-circuit applications, including filter networks.

Sutherland, W. C.↗
NASA NTRS2010

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

Courey, Karim J.↗
NASA NTRS2009

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage.

Courey, Karim J.↗
NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗
NASA NTRS2011

Fault Detection, Isolation and Recovery (FDIR) Portable Liquid Oxygen Hardware Demonstrator

The Fault Detection, Isolation and Recovery (FDIR) hardware demonstration will highlight the effort being conducted by Constellation's Ground Operations (GO) to provide the Launch Control System (LCS) with system-level health management during vehicle processing and countdown activities. A proof-of-concept demonstration of the FDIR prototype established the capability of the software to provide real-time fault detection and isolation using generated Liquid Hydrogen data. The FDIR portable testbed unit (presented here) aims to enhance FDIR by providing a dynamic simulation of Constellation subsystems that feed the FDIR software live data based on Liquid Oxygen system properties. The LO2 cryogenic ground system has key properties that are analogous to the properties of an electronic circuit. The LO2 system is modeled using electrical components and an equivalent circuit is designed on a printed circuit board to simulate the live data. The portable testbed is also be equipped with data acquisition and communication hardware to relay the measurements to the FDIR application running on a PC. This portable testbed is an ideal capability to perform FDIR software testing, troubleshooting, training among others.

Oostdyk, Rebecca L.↗
NASA NTRS1987

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

The evolution and long-time stability of a double layer in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double-layer potential structure. A simple model is presented in which this current re-distribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double-layer potential. The flank charging may be represented as that of a nonlinear transmission. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a 1-d simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Smith, Robert A.↗
NASA NTRS1987

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

The evolution and long-time stability of a double layer (DL) in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double layer potential structure. A simple model is presented in which this current redistribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double layer potential. The flank charging may be represented as that of a nonlinear transmission line. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a one-dimensional simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Smith, Robert A.↗
NASA NTRS2011

Development of a Novel Wireless Electric Power Transfer System for Space Applications

This paper will introduce a new implementation for wireless electric power transfer systems: space applications. Due to the risks that constitute the use of electrical connector for some space missions/applications, a simple wireless power system design approach will be evaluated as an alternative for the use of electrical connectors. This approach takes into consideration the overall system performance by designing the magnetic resonance elements and by verifying the overall system electrical behavior. System characterization is accomplished by executing circuit and analytical simulations using Matlab(TradeMark) and LTSpiceIV(TradeMark) software packages. The design methodology was validated by two different experiments: frequency consideration (design of three magnetic elements) and a small scale proof-ofconcept prototype. Experiment results shows successful wireless power transfer for all the cases studied. The proof-of-concept prototype provided approx.4 W of wireless power to the load (light bulb) at a separation of 3 cm from the source. In addition. a resonant circuit was designed and installed to the battery terminals of a handheld radio without batteries, making it tum on at a separation of approx.5 cm or less from the source. It was also demonstrated by prototype experimentation that multiple loads can be powered wirelessly at the same time with a single electric power source.

VazquezRamos, Gabriel↗
NASA NTRSDate not supplied

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
NASA NTRSDate not supplied

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
NASA NTRS2023

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

This work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.

Silicon Carbide↗
NASA NTRS1986

Simulation of double layers in a model auroral circuit with nonlinear impedance

A reduced circuit description of the U-shaped potential structure of a discrete auroral arc, consisting of the flank transmission line plus parallel-electric-field region, is used to provide the boundary condition for one-dimensional simulations of the double-layer evolution. The model yields asymptotic scalings of the double-layer potential, as a function of an anomalous transport coefficient alpha and of the perpendicular length scale l(a) of the arc. The arc potential phi(DL) scales approximately linearly with alpha, and for alpha fixed phi (DL) about l(a) to the z power. Using parameters appropriate to the auroral zone acceleration region, potentials of phi (DPL) 10 kV scale to projected ionospheric dimensions of about 1 km, with power flows of the order of magnitude of substorm dissipation rates.

Smith, R. A.↗