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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics

Charge storage and trapping properties of polymer dielectrics govern the charge densities of adjacent semiconductors and greatly influence the on-off switching voltage (threshold voltage, V th ) of organic field-effect transistors (OFETs) when the polymers are used as gate insulators. Intentional charging of polymer dielectrics in OFETs can change V th and affect the bias stress. We describe a chemical design and fabrication protocol to construct multilayer-stack dielectrics for pentacene-based OFETs using different polystyrene (PS)-based polymers in each layer, with oxidizable N,N-bis(4-methoxyphenyl)anilino (TPAOMe)-substituted styrene copolymers in arbitrary vertical positions in the stacks. Thermal, byproduct-free crosslinking of benzocyclobutene subunits provides integrity to the multilayer structure by preventing dissolution of the previous deposited layer. Neutron reflectivity data verified the multilayer morphology. We compared the Vth shift before and after charging the stacks by application of ±100V across 0.5-1 µm total film thicknesses. Bias stress was the dominant effect in bilayer devices with a TPAOMe layer in contact with the pentacene, indicated by the direction of V th shift associated with either polarity of external electric field. In structures with no TPAOMe subunit in contact with the pentacene, when charging with -100V on top of the source and drain electrodes, electron injection from pentacene to dielectric was the major charging mechanism, again consistent with the bias stress direction. When charging with +100V, bilayer devices without TPAOMe showed little change in V th , suggesting there was no bias stress effect or charge injection in these devices for this charging polarity. For the bilayer devices with the TPAOMe layer in the bottom, and the trilayer devices with TPOMe in the middle, when +100V was applied, the V th shifts were opposite those expected from bias stress. Dipole formation or partial ionization of chargeable groups at the interface between the dielectric layers are likely polarization mechanisms in these cases. A simple analytical model supports the plausibility of these mechanisms. This work provides examples of both stabilization and shifting of V th , and therefore controlling charge carrier density, in semiconductors overlying the dielectric multilayers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Aspects of the inverse problem for the Toda chain

We generalize Babelon's approach to equations in dual variables so as to be able to treat new types of operators which we build out of the sub-constituents of the model's monodromy matrix. Further, we also apply Sklyanin's recent monodromy matrix identities so as to obtain equations in dual variables for yet other operators. The schemes discussed in this paper appear to be universal and thus, in principle, applicable to many models solvable through the quantum separation of variables.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Nonequilibrium renormalization group fixed points of the quantum clock chain and the quantum Potts chain

In this work, we derive an exact renormalization group recursion relation for the Loschmidt amplitude of the quantum Q-state clock model and the quantum Q-state Potts model in one dimension. The renormalization group flow is discussed in detail. The fixed points of the renormalization group flow are found to be complex in general. These fixed points control the dynamical phases of the two models, giving rise to nonanalyticities in its Loschmidt rate function, for both the pure and the disordered system. For the quench protocols studied, dynamical quantum phase transitions are found to occur in the clock model for all Qs considered, while in the Potts model, they only occur when Q < 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗