SEARCH · Engineering Papers

Results for “Carbide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

All sources NASA NTRS DOE OSTI

NASA NTRS1994

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Liu, Chung-Chiun↗

NASA NTRS1960

The Hot-Pressing of Hafnium Carbide (Melting Point, 7030 F)

An investigation was undertaken to determine the effects of the hot-pressing variables (temperature, pressure, and time) on the density and grain size of hafnium carbide disks. The purpose was to provide information necessary for the production of high-density test shapes for the determination of physical and mechanical properties. Hot-pressing of -325 mesh hafnium carbide powder was accomplished with a hydraulic press and an inductively heated graphite die assembly. The ranges investigated for each variable were as follows: temperature, 3500 to 4870 F; pressure, 1000 to 6030 pounds per square inch; and time, 5 to 60 minutes. Hafnium carbide bodies of approximately 98 percent theoretical density can be produced under the following minimal conditions: 4230 F, 3500 pounds per square inch, and 15 minutes. Further increases in temperature and time resulted only in greater grain size.

Sanders, William A.↗

NASA NTRS1998

A New Approach to Joining of Silicon Carbide-Based Materials for High Temperature Applications

Ceramic joining is recognized as one of the enabling technologies for the application of silicon carbide-based materials in a number of high temperature applications. An affordable, robust technique for the joining of silicon carbide-based ceramics has been developed. This technique is capable of producing joints with tailorable thickness and composition. Microstructure and mechanical properties of reaction formed joints in a reaction bonded silicon carbide have been reported. These joints maintain their mechanical strengths at high temperatures (up to 1350 C) in air. This technique is capable of joining large and complex shaped ceramic components.

Singh, Mrityunjay↗

NASA NTRS1998

Affordable Fabrication and Properties of Silicon Carbide-Based Interpenetrating Phase Composites

An affordable processing technique for the fabrication of silicon carbide-based interpenetrating phase composites (IPCs) is presented. This process consists of the production of microporous carbon preforms and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture for which methods to control pore volume and pore size have been established. The process gives good control of microstructure and morphology of silicon carbide-based composite materials. Room and high temperature mechanical properties (flexural strength, compressive strength, and flexural creep) of low and high silicon-silicon carbide composites will be discussed.

Singh, Mrityunjay↗

NASA NTRS1998

Microstructure and Mechanical Properties of Reaction-Formed Joints in Reaction Bonded Silicon Carbide Ceramics

A reaction-bonded silicon carbide (RB-SiC) ceramic material (Carborundum's Cerastar RB-SIC) has been joined using a reaction forming approach. Microstructure and mechanical properties of three types of reaction-formed joints (350 micron, 50-55 micron, and 20-25 micron thick) have been evaluated. Thick (approximately 350 micron) joints consist mainly of silicon with a small amount of silicon carbide. The flexural strength of thick joints is about 44 plus or minus 2 MPa, and fracture always occurs at the joints. The microscopic examination of fracture surfaces of specimens with thick joints tested at room temperature revealed the failure mode to be typically brittle. Thin joints (<50-55 micron) consist of silicon carbide and silicon phases. The room and high temperature flexural strengths of thin (<50-55 micron) reaction-formed joints have been found to be at least equal to that of the bulk Cerastar RB-SIC materials because the flexure bars fracture away from the joint regions. In this case, the fracture origins appear to be inhomogeneities inside the parent material. This was always found to be the case for thin joints tested at temperatures up to 1350C in air. This observation suggests that the strength of Cerastar RB-SIC material containing a thin joint is not limited by the joint strength but by the strength of the bulk (parent) materials.

Singh, M.↗

NASA NTRS2004

Joining and Assembly of Silicon Carbide-based Advanced Ceramics and Composites for High Temperature Applications

Silicon carbide based advanced ceramics and fiber reinforced composites are under active consideration for use in wide variety of high temperature applications within the aeronautics, space transportation, energy, and nuclear industries. The engineering designs of ceramic and composite component require fabrication and manufacturing of large and complex shaped parts of various thicknesses. In many instances, it is more economical to build up complex shapes by joining simple geometrical shapes. In addition these components have to be joined or assembled with metallic sub-components. Thus, joining and attachment have been recognized as enabling technologies for successful utilization of ceramic components in various demanding applications. In this presentation, various challenges and opportunities in design, fabrication, and testing o high temperature joints in ceramic matrix composites will be presented. Silicon carbide based advanced ceramics (CVD and hot pressed), and C/SiC and SiC/SiC composites, in different shapes and sizes, have been joined using an affordable, robust ceramic joining technology (ARCJoinT). Microstructure and high temperature mechanical properties of joints in silicon carbide ceramics and CVI and melt infiltrated SiC matrix composites will,be reported. Various joint design philosophies and design issues in joining of ceramics and composites well be discussed.

Singh, M.↗

NASA NTRS2005

Surface Figure Measurement of Silicon Carbide Mirrors at Cryogenic Temperatures

The surface figure of a developmental silicon carbide mirror, cooled to 87 K and then 20 K within a cryostat, was measured with unusually high precision at the Goddard Space Flight Center (GSFC). The concave spherical mirror, with a radius of 600 mm and a clear aperture of 150 mm, was fabricated of sintered silicon carbide. The mirror was mounted to an interface plate representative of an optical bench, made of the material Cesic@, a composite of silicon, carbon, and silicon carbide. The change in optical surface figure as the mirror and interface plate cooled from room temperature to 20 K was 3.7 nm rms, with a standard uncertainty of 0.23 nm in the rms statistic. Both the cryo-change figure and the uncertainty are among the lowest such figures yet published. This report describes the facilities, experimental methods, and uncertainty analysis of the measurements.

Blake, Peter↗

NASA NTRS2007

Powder Processing of High Temperature Cermets and Carbides at Marshall Space Flight Center

The Materials and Processing Laboratory at NASA Marshall Space Flight Center is developing Powder Metallurgy (PM) processing techniques for high temperature cermet and carbide material consolidation. These new group of materials would be utilized in the nuclear core for Nuclear Thermal Rockets (NTR). Cermet materials offer several advantages for NTR such as retention of fission products and fuels, better thermal shock resistance, hydrogen compatibility, high thermal conductivity, and high strength. Carbide materials offer the highest operating temperatures but are sensitive to thermal stresses and are difficult to process. To support the effort, a new facility has been setup to process refractory metal, ceramic, carbides and depleted uranium-based powders. The facility inciudes inert atmosphere glove boxes for the handling of reactive powders, a high temperature furnace, and powder processing equipment used for blending, milling, and sieving. The effort is focused on basic research to identify the most promising compositions and processing techniques. Several PM processing methods including Cold and Hot Isostatic Pressing are being evaluated to fabricate samples for characterization and hot hydrogen testing.

Salvail, Pat↗

NASA NTRS1999

Silicon carbide-silicon composite having improved oxidation resistance and method of making

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Luthra, Krishan Lal↗

NASA NTRS1997

Varying potential silicon carbide gas sensor

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Shields, Virgil B.↗

NASA NTRS2002

Method of making silicon carbide-silicon composite having improved oxidation resistance

Luthra, Krishan Lal↗

NASA NTRS1996

Silicon carbide thyristor

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Edmond, John A.↗

NASA NTRS2008

Development and Characterization of the Bonding and Integration Technologies Needed for Fabricating Silicon Carbide Based Injector Components

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding technology, titanium interlayers (coatings and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness, and processing time were investigated. Electron microprobe analysis was used to identify the reaction formed phases. In the diffusion bonds, an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner interlayers of pure titanium and/or longer processing times resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Nondestructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Halbig,Michael C.↗

NASA NTRS2008

Bonding and Integration Technologies for Silicon Carbide Based Injector Components

Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

Halbig, Michael C.↗

NASA NTRS2007

Rapid Fabrication of Carbide Matrix/Carbon Fiber Composites

Composites of zirconium carbide matrix material reinforced with carbon fibers can be fabricated relatively rapidly in a process that includes a melt infiltration step. Heretofore, these and other ceramic matrix composites have been made in a chemical vapor infiltration (CVI) process that takes months. The finished products of the CVI process are highly porous and cannot withstand temperatures above 3,000 F (approx.1,600 C). In contrast, the melt-infiltration-based process takes only a few days, and the composite products are more nearly fully dense and have withstood temperatures as high as 4,350 F (approx.2,400 C) in a highly oxidizing thrust chamber environment. Moreover, because the melt- infiltration-based process takes much less time, the finished products are expected to cost much less. Fabrication begins with the preparation of a carbon fiber preform that, typically, is of the size and shape of a part to be fabricated. By use of low-temperature ultraviolet-enhanced chemical vapor deposition, the carbon fibers in the preform are coated with one or more interfacial material(s), which could include oxides. The interfacial material helps to protect the fibers against chemical attack during the remainder of the fabrication process and against oxidation during subsequent use; it also enables slippage between the fibers and the matrix material, thereby helping to deflect cracks and distribute loads. Once the fibers have been coated with the interfacial material, the fiber preform is further infiltrated with a controlled amount of additional carbon, which serves as a reactant for the formation of the carbide matrix material. The next step is melt infiltration. The preform is exposed to molten zirconium, which wicks into the preform, drawn by capillary action. The molten metal fills most of the interstices of the preform and reacts with the added carbon to form the zirconium carbide matrix material. The zirconium does not react with the underlying fibers because they are protected by the interfacial material(s). The success of the melt-infiltration step depends on interface material selection and uniform coating of the fibers, infiltration with the correct amount of carbon, and careful control of temperature and rate of heating.

Williams, Brian E.↗

NASA NTRS2011

Silicon Carbide Mounts for Fabry-Perot Interferometers

Etalon mounts for tunable Fabry- Perot interferometers can now be fabricated from reaction-bonded silicon carbide structural components. These mounts are rigid, lightweight, and thermally stable. The fabrication of these mounts involves the exploitation of post-casting capabilities that (1) enable creation of monolithic structures having reduced (in comparison with prior such structures) degrees of material inhomogeneity and (2) reduce the need for fastening hardware and accommodations. Such silicon carbide mounts could be used to make lightweight Fabry-Perot interferometers or could be modified for use as general lightweight optical mounts. Heretofore, tunable Fabry-Perot interferometer structures, including mounting hardware, have been made from the low-thermal-expansion material Invar (a nickel/iron alloy) in order to obtain the thermal stability required for spectroscopic applications for which such interferometers are typically designed. However, the high mass density of Invar structures is disadvantageous in applications in which there are requirements to minimize mass. Silicon carbide etalon mounts have been incorporated into a tunable Fabry-Perot interferometer of a prior design that originally called for Invar structural components. The strength, thermal stability, and survivability of the interferometer as thus modified are similar to those of the interferometer as originally designed, but the mass of the modified interferometer is significantly less than the mass of the original version.

Lindemann, Scott↗

NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗

NASA NTRS2011

Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

Singh, M.↗