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At least 127 records · Page 7

Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optimal Capacitor Bank Capacity and Placement in Distribution Systems with High Distributed Solar Power Penetration

Capacitor banks have been generally installed and utilized to support distribution voltage during period of higher load or on longer, higher impedance, feeders. Installations of distributed energy resources in distribution systems are rapidly increasing, and many of these generation resources have variable and uncertain power output. These generators can significantly change the voltage profile across a feeder, and therefore when a new capacitor bank is needed analysis of optimal capacity and location of the capacitor bank is required. In this paper, we model a particular distribution system including essential equipment. An optimization method is adopted to determine the best capacity and location sets of the newly installed capacitor banks, in the presence of distributed solar power generation. Finally we analyze the optimal capacitor banks configuration through the optimization and simulation results.

14 SOLAR ENERGY↗

Fabrication of Solid-State Multilayer Glass Capacitors

Alkali-free glasses show immense promise for the development of high-energy density capacitors. The high breakdown strengths on single-layer sheets of glass suggest the potential for improved energy densities over existing state-of-the art polymer capacitors. In this paper, we demonstrate the ability to package thin glass to make solid-state capacitors. Individual layers are bonded using epoxy, leading to capacitors that exhibit stable operation over the temperature range -55 °C to +65 °C. Here, this fabrication approach is scalable and allows for proof testing individual layers prior to incorporation of the stack, providing a blueprint for the fabrication of high-energy density capacitors.

36 MATERIALS SCIENCE↗

Imbalance Mechanism and Balanced Control of Capacitor Voltage for a Hybrid Modular Multilevel Converter

Due to different charging and discharging characteristics of full-bridge submodules and half-bridge submodules in hybrid modular multilevel converters (MMC), capacitor voltage imbalance will occur under boosted ac voltage or reduced dc voltage conditions. To address this issue, the mechanism of capacitor voltage imbalance is carefully studied, with three main factors-modulation index, power angle, and hybridization ratio-summarized and their effect on capacitor voltage imbalance analyzed. Further, a control strategy based on fundamental frequency reactive circulating current injection is proposed to keep the capacitor voltage balanced in the hybrid MMC. The amplitude and phase angle of the injected circulating current are calculated and their influence on the energy fluctuation in the submodules' capacitors and the semiconductors' current stress is explored. Lastly, experimental results under boosted ac voltage and reduced dc voltage conditions demonstrate the feasibility and validity of the proposed scheme.

42 ENGINEERING↗

Degradation Modeling and Reliability Assessment of Capacitors

The degradation of capacitors under accelerated stress conditions occur in a monotonic and non-linear fashion. Several efforts have been made to model the degradation behavior of capacitor considering either physics-of-failure models or statistical models and subsequently estimate its reliability and lifetime parameters. But most of these models fail to reflect the physical properties of the degradation path, which varies according to several intrinsic and extrinsic factors. These factors introduce random and temporal uncertainty among the population of capacitors. The gamma stochastic process can model both type of uncertainties among the population of capacitors. In this paper, we model the capacitor degradation by non-homogeneous gamma stochastic process in which both the model parameters (shape and scale) are dependent on stress variables. The model parameters are estimated using the maximum likelihood estimation approach.

42 ENGINEERING↗

Evaluation of Commercial Automotive-Grade BME Capacitors

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life

capacitor↗

Leakage Currents and Gas Generation in Advanced Wet Tantalum Capacitors

Currently, military grade, established reliability wet tantalum capacitors are among the most reliable parts used for space applications. This has been achieved over the years by extensive testing and improvements in design and materials. However, a rapid insertion of new types of advanced, high volumetric efficiency capacitors in space systems without proper testing and analysis of degradation mechanisms might increase risks of failures. The specifics of leakage currents in wet electrolytic capacitors is that the conduction process is associated with electrolysis of electrolyte and gas generation resulting in building up of internal gas pressure in the parts. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. In this work, in Part I, leakages currents in various types of tantalum capacitors have been analyzed in a wide range of voltages, temperatures, and time under bias. Gas generation and the level of internal pressure have been calculated in Part II for different case sizes and different hermeticity leak rates to assess maximal allowable leakage currents. Effects related to electrolyte penetration to the glass seal area have been studied and the possibility of failures analyzed in Part III. Recommendations for screening and qualification to reduce risks of failures have been suggested.

degradation mechanisms↗

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

wet tantalum capacitors (WTC)↗

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

cracking↗

Advanced Wet Tantalum Capacitors: Design, Specifications and Performance

Insertion of new types of commercial, high volumetric efficiency wet tantalum capacitors in space systems requires reassessment of the existing quality assurance approaches that have been developed for capacitors manufactured to MIL-PRF-39006 requirements. The specifics of wet electrolytic capacitors is that leakage currents flowing through electrolyte can cause gas generation resulting in building up of internal gas pressure and rupture of the case. The risk associated with excessive leakage currents and increased pressure is greater for high value advanced wet tantalum capacitors, but it has not been properly evaluated yet. This presentation gives a review of specifics of the design, performance, and potential reliability risks associated with advanced wet tantalum capacitors. Problems related to setting adequate requirements for DPA, leakage currents, hermeticity, stability at low and high temperatures, ripple currents for parts operating in vacuum, and random vibration testing are discussed. Recommendations for screening and qualification to reduce risks of failures have been suggested.

hermeticity↗

Evaluation of Series T22 Wet Tantalum Capacitors

Several types of advanced wet tantalum capacitors, and series T22 in particular, are designed without internal Teflon sealing that is used for military grade, CLR style capacitors. This raises concerns regarding hermeticity of the single seal parts and their capability to withstand high internal gas pressures that might develop during operation in space. To address these issues, T22 series capacitors rated to 50 V and 125 V were subjected to highly accelerated life testing (HALT) at 125 C and rated voltage and step stress random vibration testing (RVT). To simulate conditions of storage or operation under increased internal gas pressure, the parts were stored at temperature of 150 C for 2500 hr (HTS150). Electrical characteristics of the parts were measured through the storage testing and the hermeticity leak rate was tested before and after HTS150. To assess thermo-mechanical robustness of the part, capacitors were manually soldered onto printed wired boards (PWB) and stressed by 1000 temperature cycles between -55 C and +125 C. The effect of temperature cycling was assessed by additional HALT at different temperatures. Results show that T22 series capacitors have robust design and can satisfy requirements for space applications.

Wet tantalum capacitors↗

Cracking Problems in Low-Voltage Chip Ceramic Capacitors

Cracking remains the major reason of failures in multilayer ceramic capacitors (MLCCs) used in in space electronics. Due to a tight quality control of space-grade components, the probability that as manufactured capacitors have cracks is relatively low, and cracking is often occurs during assembly, handling and the following testing of the systems. Majority of capacitors with cracks are revealed during the integration and testing period, but although extremely rarely, defective parts remain undetected and result in failures during the mission. This situation is aggravated by manual soldering and rework that are often used during low volume production of circuit boards for space. Although failures of MLCCs are often attributed to the post-manufacturing stresses, in many cases they are due to a combination of certain deviations in the manufacturing processes that result in hidden defects in the parts and excessive stresses during assembly and use. This report gives an overview of design, manufacturing and testing processes of MLCCs focusing on elements related to cracking problems. The existing and new screening and qualification procedures and techniques are briefly described and assessed by their effectiveness in revealing cracks. The capability of different test methods to simulate stresses resulting in cracking, mechanisms of failures in capacitors with cracks, and possible methods of selecting the most robust to manual soldering stresses capacitors are discussed.

testing↗

A Tale of Three Capacitor Problems

This talk will make a connection among several capacitor-related anomalies and failures that tie to some of the following conditions: reverse bias installation, cracked ceramic, and to minimal extent, elevated equivalent series resistance (ESR). In particular, we will briefly discuss anomalies we have experienced (1) in ground testing involving ceramic capacitors that had been hand soldered or had had touched-up solder joints, (2) in reverse-biased capacitors that have been operating for years on-orbit but that have experienced failures in ground operation and testing, and (3) in ceramic capacitors that exhibited an on-orbit latent defect resulting from cracks, and how these have come together. The talk will provide some lessons learned for recognizing and understanding anomalous behavior involving capacitors.

Anomalies↗

High-Energy Density Capacitors for Electric Vehicle Traction Inverters

DC bus capacitors take up substantial space in a traction inverter, limiting the traction drive power density. Thus, several commercial capacitor technologies, under consideration for use as DC bus capacitors for electric vehicle traction inverters, were reviewed for their ability to optimize the volume of traction inverters and are evaluated in this paper. Three promising capacitor technologies--film, ceramic, and PLZT have been selected for detailed experimental characterization. Experimental results for equivalent series resistance, equivalent series inductance, and effective capacitance with respect to DC bias voltage for various operating frequencies and temperatures are presented. The results reveal the superiority of the PLZT capacitor in terms of power density, current conduction capability, and redundancy.

Chowdhury, Shajjad↗

Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter

In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.

Huang, Xingxuan↗

Common Mode Voltage Compensation for Capacitor Voltage Ripple Reduction of 7-kV SiC-based Modular Multilevel Converter

Abstract -Modular multilevel converters (MMCs), with the filterless and transformer-less features, are considered as a promising topology for high-efficiency medium voltage (MV) high voltage (HV) drive systems. However, a large current ripple flowing through the capacitors of each submodule will cause significant capacitor voltage fluctuation. This paper proposes a new compensation method in common mode voltage injection to further reduce the magnitude of the fundamental component in capacitor voltages. The capacitor voltage ripples are reduced significantly by using the proposed control method, which means that smaller size of capacitors can be used for same voltage ripple requirements. Simulation and experimental test results verify the proposed compensation method using a three-phase permanent magnet synchronous machine (PMSM).

Common mode voltage injection↗

Improvement of the mechanical and thermal properties of the metallized polycarbonate capacitor

Changes were studied which enable polycarbonate metallized film capacitors to withstand 500 thermal shock cycles while maintaining electrical characteristic integrity without becoming intermittent, and without losing hermeticity. The task was for metallized polycarbonate film capacitors designed to meet MIL-C-39022/9 and MIL-C-83421/1. The capacitor design improvements implemented were the insertion of a rubber washer between spray cap and end seal and the utilization of a flexible lead assembly. One hundred fifty capacitors incorporating the design improvements were manufactured and subsequently underwent 500 thermal shock cycles. One hundred forty nine capacitors survived the test. Failure analysis revealed that the lone failure was due to a poor solder joint, initially detected in pre-screening tests as having poor dissipation factor and equivalent series resistance measurement readings.

Kellerman, H. J.↗