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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Contact ion-pair structure in concentrated cesium chloride aqueous solutions: An extended X-ray absorption fine structure study
The hydration and ion pair structure of Cl- ion in aqueous cesium chloride solutions at 0.5, 6 and 11 mol/kg (H2O) has been studied using Extended X-ray Absorption Fine Structure (EXAFS) at the Cl K-edge. The co-refinement of multiple EXAFS datasets shows the hydration structure of the free Cl- ion is consistent with previously reported studies. In concentrated solution the Cl- ion is strongly associated with the cation forming contact ion pairs with 1.6 and 2.8 Cs ions in 6 and 11 mol/kg aqueous CsCl, respectively. The fact that the degree of ion pairing of Cs-Cl is higher than that of both aqueous RbCl and RbBr at the same concentration is an interesting result as it deviates from the Collins’s law of matching water affinities. The reported Cs-Cl ion-pair structure provides a basis for the development and testing of improved interaction potentials leading to more realistic structures from molecular dynamics (MD) simulations. ACKNOWLEDGEMENT VTP was supported by the Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number 103.99-2013.19. Work by JLF was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. The PNC/XSD facilities at the Advanced Photon Source, and research at these facilities, are supported by DOE/BES, the Canadian Light Source and its funding partners, the University of Washington, and the Advanced Photon Source. Use of the Advanced Photon Source, an Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory, was supported by the DOE under Contract No. DE-AC02-06CH11357.
Modeling the evolution of lithium-ion particle contact distributions using a fabric tensor approach
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Strong Photothermoelectric Response and Contact Reactivity in the Dirac Semimetal ZrTe5.
Abstract not provided.
Controlling Catalyst–Semiconductor Contacts: Interfacial Charge Separation in p-InP Photocathodes
Charge-carrier-selective interfaces between electrocatalyst particles and semiconductor light absorbers are critical for solar photochemistry but controlling their properties is challenging. Using thin films and nanoparticle arrays of Pt hydrogen-evolution catalysts on p-InP (a high-performance photocathode material), along with macroscopic and nanoscopic electrical and chemical analysis, we show how hydrogen alloying, the pinch-off effect for nanoscale contacts, and the formation of a native surface oxides all play different roles in creating charge-carrier-selective junctions. As a result, the new insights can be broadly applied to photocathodes, photoanodes, and overall water-splitting systems to control charge-carrier selectivity and improve performance.
Investigation of Ultra-Thin Titania Films as Hole-Blocking Contacts for Organic Photovoltaics
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Band offsets of n-type electron-selective contacts on cuprous oxide (Cu{sub 2}O) for photovoltaics
The development of cuprous oxide (Cu{sub 2}O) photovoltaics (PVs) is limited by low device open-circuit voltages. A strong contributing factor to this underperformance is the conduction-band offset between Cu{sub 2}O and its n-type heterojunction partner or electron-selective contact. In the present work, a broad range of possible n-type materials is surveyed, including ZnO, ZnS, Zn(O,S), (Mg,Zn)O, TiO{sub 2}, CdS, and Ga{sub 2}O{sub 3}. Band offsets are determined through X-ray photoelectron spectroscopy and optical bandgap measurements. A majority of these materials is identified as having a negative conduction-band offset with respect to Cu{sub 2}O; the detrimental impact of this on open-circuit voltage (V{sub OC}) is evaluated through 1-D device simulation. These results suggest that doping density of the n-type material is important as well, and that a poorly optimized heterojunction can easily mask changes in bulk minority carrier lifetime. Promising heterojunction candidates identified here include Zn(O,S) with [S]/[Zn] ratios >70%, and Ga{sub 2}O{sub 3}, which both demonstrate slightly positive conduction-band offsets and high V{sub OC} potential. This experimental protocol and modeling may be generalized to evaluate the efficiency potential of candidate heterojunction partners for other PV absorbers, and the materials identified herein may be promising for other absorbers with low electron affinities.
Daejeon16 interaction with contact-term corrections for heavy nuclear systems
The Daejeon16 two-nucleon interaction is employed in many-body approaches based on the mean-field approximation. The perturbative character of Daejeon16 is verified by comparing results for 16 O from the Hartree–Fock (HF) approximation and from the no-core shell model and by examining the magnitude of perturbative corrections to the HF energy in light and heavy nuclei. Here, in order to approximately describe energies and radii across the nuclear chart, a phenomenological correction in the form of a two-plus-three-nucleon contact interaction is introduced. With fitted parameters we achieve a very good description of medium-mass nuclei in terms of energy and size and also in terms of the centroid energy of the giant monopole resonance and the dipole polarizability calculated within the random-phase approximation. Our results provide further justification for the use of Daejeon16 augmented with phenomenological corrections as an effective interaction of perturbative character in a variety of applications.
Contact-interaction Faddeev equation and, inter alia , proton tensor charges
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Global topology of contact force networks: Insight into shear thickening suspensions
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Variable reluctance switch avoids contact corrosion and contact bounce
Variable reluctance switch avoids contact corrosion and bounce in a hostile environment. It consists of a wire-wound magnetic core and moveable bridge piece that alters the core flux pattern to produce an electrical output useful for switching control media.
Heat transfer between surfaces in contact: An analytical and experimental study of thermal contact resistance of metallic interfaces
Dimensionless correlation for predicting thermal contact resistance between similar metal surfaces in vacuum environment
Barrier height determination on Schottky contacts formed at the back contact-semiconductor interface of degraded solar cells
A method is described of determining an equivalent circuit for solar cells which have degraded as a result of the formation of a rectifying Schottky barrier at the back contact. An excellent fit of experimental data has been achieved using SCEPTRE with an equivalent circuit derived from the shape of the measured current voltage characteristics. One key parameter of the Schottky barrier diode, the reverse saturation current, can be used to determine the barrier potential. The barrier potential increases as the cell is stressed with 0.5 volts being a typical experimentally determined value for a degraded cell.
Method of forming contacts for a back-contact solar cell
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
Method of forming contacts for a back-contact solar cell
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.