Thermal resistances in contact areas of heating elements <prokontaktni termichni opory u teplovydilyayuchykh elementakh<
Thermal resistances in contact areas of heating elements
THERMAL PROPERTY↗
SEARCH · Engineering Papers
Results for “CONTACT RESISTANCE”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Multiwalled Carbon Nanotube/nanofiber Arrays as Conductive and Dry Adhesive Interface Materials
We demonstrate the possibility of making conductive and dry adhesive interfaces between multiwalled carbon nanotube (MWNT) and nanofiber (MWNF) arrays grown by chemical vapor deposition with transition-metal as catalyst on highly Boron doped silicon substrates. The maximum observed adhesion force between MWNT and MWNF surfaces is 3.5 mN for an apparent contact area of 2 mm by 4 mm. The minimum contact resistance measured at the same time is approx.20 Omega. Contact resistances of MWNT-MWNT and MWNT-gold interfaces were also measured as pressure forces around several mN were applied at the interface. The resulting minimum contact resistances are on the same order but with considerable variation from sample to sample. For MWNT-MWNT contacts, a minimum contact resistance of approx.1 Omega is observed for a contact area of 2 mm by 1 mm. The relatively high contact resistances, considering the area density of the nanotubes, might be explained by the high cross-tube resistances at the contact interfaces.
Tong, Tao↗
Optimizing Porous Transport Layer Porosity for Proton Exchange Membrane Water Electrolysis
An empirical model is presented that describes anode-side losses related to porous transport layer (PTL) morphology in proton exchange membrane water electrolysis (PEMWE). The model is based on an advanced voltage breakdown analysis that links various overpotentials to PTL morphology. Custom Ti PTLs, spanning uncommonly low porosities (22 - 31%), were fabricated and analyzed with X-ray CT to obtain pore and particle size distributions. Particle size distributions were consistent across samples with an average particle diameter of 12.0?..mu..m, whereas average pore diameters ranged from 6.0 to 7.0?..mu..m. The PTLs were tested in standard PEMWE cell assemblies with anode catalyst loadings of 0.1 mgIr cm-2 to obtain polarization curves, electrochemical impedance spectra, and augmented Tafel analysis. The PTL-dependent anode side losses were deconvoluted and assigned to excess utilization, concentration, ion transport resistance, and electrical contact resistance overpotentials. The data and model reveal an optimal 20 - 28% PTL porosity region where utilization and contact resistance overpotentials are minimized without triggering concentration and ion transport losses related to water deprivation. The optimal PTL porosity depends on the operating current density and is demonstrated at realistic PEMWE water flow rates to establish PTL design guidance for operation at scale.
08 HYDROGEN↗
Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers
The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.
Bose, Amitava↗
Getting the current out
Progress of a photovoltaic (PV) device from a research concept to a competitive power-generation source requires an increasing concern with current collection. The initial metallization focus is usually on contact resistance, since a good ohmic contact is desirable for accurate device characterization measurements. As the device grows in size, sheet resistance losses become important and a metal grid is usually added to reduce the effective sheet resistance. Later, as size and conversion efficiency continue to increase, grid-line resistance and cell shadowing must be considered simultaneously, because grid-line resistance is inversely related to total grid-line area and cell shadowing is directly related. A PV cell grid design must consider the five power-loss phenomena mentioned above: sheet resistance, contact resistance, grid resistance, bus-bar resistance and cell shadowing. Although cost, reliability and usage are important factors in deciding upon the best metallization system, this paper will focus only upon grid-line design and substrate material problems for flat-plate solar arrays.
Burger, D. R.↗
Resistance of contact materials to electric wear
Electric wear resistance of silver and cermet contacts
ELECTRIC CONTACT↗
Thermal constriction resistance between contacting metallic paraboloids - Application to instrument bearings
Thermal constriction resistance between contacting metallic paraboloids applied to instrument bearings
Yovanovich, M. M.↗
Feasibility Assessment of Using Electrical Impedance Tomography for Damage Localization in Graphite Microreactor Components
Microreactors have great potential to decrease capital costs and construction timelines, reducing the barriers to implementing advanced nuclear reactor technologies. However, the lower power output of these microreactors introduces economic challenges if the operation and maintenance costs cannot be reduced sufficiently. Many microreactor concepts use graphite materials for in-core moderator and structural purposes, which will require periodic inspection or, ideally, in situ structural health monitoring. This work describes an initial evaluation of the feasibility of leveraging graphite’s semiconducting properties to perform electrical impedance tomography (EIT) for defect localization. First, a study was performed to identify the best methods for bonding electrical contacts to minimize the effects of contact resistance that interfere with impedance measurements of the graphite. After determining the best bonding approach, electrodes were attached to multiple graphite components with varying geometries (e.g., simple block and more representative microreactor hexagonal block). In parallel, finite element analysis approaches were developed and implemented to analyze the impact of defects and contact resistances and to inform an iterative inverse model for reconstructing the conductivity distribution. The results of this study show that defect localization in graphite components is possible using EIT if a sufficient number of electrodes (to improve spatial resolution) can be bonded using a technique with very low contact resistance and those contact resistances remain stable during reactor operation. If the reactor core and vessel design do not allow electrodes to be bonded during reactor operation, then it may be possible to detach/reattach electrodes between reactor operation and outages if a suitable mechanical connection that offers repeatable contact resistance can be identified. Alternatively, future work could focus on identifying contacts that can survive the harsh reactor operating environment so that contacts do not need to be removed.
22 GENERAL STUDIES OF NUCLEAR REACTORS↗
Friction at small displacement.
Low contact resistance between metal surfaces is often observed in spite of interposed lubricant and/or oxide films. To study this effect an apparatus is used with which normal force and tangential microdisplacement are applied between a small lead rider and a gold flat with various surface film conditions. Under nonoxidized and nonlubricated conditions, and with either oxide or stearic acid lubricant film alone, friction is high and contact resistance is low. With oxide and lubricant together, friction is much lower and slide is smooth, but contact resistance remains low and Ohm's law is obeyed. The results are consistent with Greenwood's theory of contact resistance for a cluster of minute metallic contact spots within the load-supporting area. The contact resistance of such a cluster is indistinguishable, for practical purposes, from that given by complete metallic contact.
Campbell, W. E.↗
Statistical Analysis of Intertube Tunneling Contacts in the Macroscopic Electrical Conductivity of Carbon Nanotube Fibers
Here, this study investigates the influence of tunneling contact resistances between carbon nanotubes (CNTs) on electron transport and electrical conductivity of macroscopic carbon nanofibers (CNFs), which profoundly impacts the performance of CNT thin film electronics, CNF electron emitters and cathodes, and energy conversion and storage devices. Utilizing a self-consistent electrical contact model coupling a transmission line model with tunneling current, we calculate the contact resistances of a plethora of CNT-CNT contacts within a CNF fiber, which consists of aligned, densely packed CNTs. A statistical analysis is conducted, using Gaussian distributions to account for variations in contact lengths, tunneling gap distances, and single CNT aspect ratios, to calculate the CNT-CNT contact resistance and the overall resistance of CNT fiber. By scaling our model to a macroscopic level, our results are in good agreement with experimental measurements. Our calculation suggests that while increasing the contact overlap length diminishes individual CNT-CNT contact resistance, it could paradoxically increase macroscopic CNT fiber resistance for a given constant CNF mass density, which is due to that fact that a larger overlap length allows more CNTs to pack along an electrical conduction path per unit length, leading to more tunneling contact junctions connected in series and thus less number of parallel conduction paths within the fiber cross section. Increasing tunneling gap distance increases both individual contact and overall fiber resistance. This research provides a simple design tool for tailoring CNT fiber electrical properties to promote real-world applications using CNTs or similar low-dimensional materials.
36 MATERIALS SCIENCE↗
Cracked Film Lithography with CuGaO x Buffers for Bifacial CdTe Photovoltaics
Abstract Bifacial CdTe solar cells with greater power density than the monofacial baselines are demonstrated by using a CuGaO x rear interface buffer that passivates while reducing sheet resistance and contact resistance. Inserting CuGaO x between the CdTe and Au increases mean power density from 18.0 ± 0.5 to 19.8 ± 0.4 mW cm −2 for one sun front illumination. However, coupling CuGaO x with a transparent conductive oxide leads to an electrical barrier. Instead, CuGaO x is integrated with cracked film lithography (CFL)‐patterned metal grids. CFL grid wires are spaced narrowly enough (≈10 µm) to alleviate semiconductor resistance while retaining enough passivation and transmittance for a bifacial power gain: bifacial CuGaO x /CFL grids generate 19.1 ± 0.6 mW cm −2 for 1 sun front + 0.08 sun rear illumination and 20.0 ± 0.6 mW cm −2 at 1 sun front + 0.52 sun rear—the highest reported power density at field albedo conditions for a scaled polycrystalline absorber.
14 SOLAR ENERGY↗
Technology development for phosphoric acid fuel cell powerplant (phase 2)
Progress is reported in the development of material, cell components, and reformers for on site integrated energy systems. Internal resistance and contact resistance were improved. Dissolved gases (O2, N2, and CO2) were found to have no effect on the electrochemical corrosion of phenolic composites. Stack performance was increased by 100 mV over the average 1979 level.
Christner, L.↗
Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region
A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.
Source record↗
Effects of ultra-vacuum and space environment on contact ohmic resistance: LDEF experiment AO 138-11
The FRECOPA experimentation of chemical resistance of electrical connector contacts, as described, has evidenced the detrimental time variations of nickel plated conductors and gilded copper contacts, irrespective of crimping storage or metal peening conditions. With a view to reorient aluminum technology a silvered aluminum conductor/gilded aluminum contact solution was evaluated.
Assie, Jean-Pierre↗
High-temperature ohmic contact to n-type 6H-SiC using nickel
Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 C and yielded values less than 5 x 10(exp -6) ohm sq cm at both temperatures. The trend shows a decreasing contact resistance at higher temperature. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.
Crofton, J.↗
Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering
The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.
2D materials↗
Electric contact phenomena in ultra clean and specifically contaminated systems.
Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultra clean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultra pure iron, an iron-cobalt alloy and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.
Keller, D. V., Jr.↗
Electric contact phenomena in ultra clean and specifically contaminated systems.
Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultraclean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultrapure iron, and iron-cobalt alloy, and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.
Keller, D. V., Jr.↗