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At least 1,243 records · Page 69

Intrinsic Photoconductivity of few-layered ZrS 2 Phototransistors via Multiterminal Measurements

We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS 2 .Few-atomic layer ZrS 2 field-effect transistors were fabricated on the Si/SiO 2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS 2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

36 MATERIALS SCIENCE↗

Carbide-Modified Pd on ZrO2 as Active Phase for CO2-Reforming of Methane—A Model Phase Boundary Approach

Starting from subsurface Zr0-doped “inverse” Pd and bulk-intermetallic Pd0Zr0 model catalyst precursors, we investigated the dry reforming reaction of methane (DRM) using synchrotron-based near ambient pressure in-situ X-ray photoelectron spectroscopy (NAP-XPS), in-situ X-ray diffraction and catalytic testing in an ultrahigh-vacuum-compatible recirculating batch reactor cell. Both intermetallic precursors develop a Pd0–ZrO2 phase boundary under realistic DRM conditions, whereby the oxidative segregation of ZrO2 from bulk intermetallic PdxZry leads to a highly active composite layer of carbide-modified Pd0 metal nanoparticles in contact with tetragonal ZrO2. This active state exhibits reaction rates exceeding those of a conventional supported Pd–ZrO2 reference catalyst and its high activity is unambiguously linked to the fast conversion of the highly reactive carbidic/dissolved C-species inside Pd0 toward CO at the Pd/ZrO2 phase boundary, which serves the role of providing efficient CO2 activation sites. In contrast, the near-surface intermetallic precursor decomposes toward ZrO2 islands at the surface of a quasi-infinite Pd0 metal bulk. Strongly delayed Pd carbide accumulation and thus carbon resegregation under reaction conditions leads to a much less active interfacial ZrO2–Pd0 state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electron Beam Melting of Niobium Alloys from Blended Powders

Niobium-based tungsten alloys are desirable for high-temperature structural applications yet are restricted in practice by limited room-temperature ductility and fabricability. Powder bed fusion additive manufacturing is one technology that could be leveraged to process alloys with limited ductility, without the need for pre-alloying. A custom electron beam powder bed fusion machine was used to demonstrate the processability of blended Nb-1Zr, Nb-10W-1Zr-0.1C, and Nb-20W-1Zr-0.1C powders, with resulting solid optical densities of 99+%. Ultimately, post-processing heat treatments were required to increase tungsten diffusion in niobium, as well as to attain satisfactory mechanical properties.

36 MATERIALS SCIENCE↗

Texture Memory in Hexagonal Metals and Its Mechanism

Texture memory is a phenomenon in which retention of initial textures occurs after a complete cycle of forward and backward transformations, and it occurs in various phase-transforming materials including cubic and hexagonal metals such as steels and Ti and Zr alloys. Texture memory is known to be caused by the phenomena called variant selection, in which some of the allowed child orientations in an orientation relationship between the parent and child phases are preferentially selected. Without such variant selection, the phase transformations would randomize preferred orientations. In this article, the methods of prediction of texture memory and mechanisms of variant selections in hexagonal metals are explored. The prediction method using harmonic expansion of orientation distribution functions with the variant selection in which the Burgers orientation relationship, {110}β//{0001} α-hex <1$\bar{1}$1>β//$\langle2\bar{11}0\rangle$ α-hex , is held with two or more adjacent parent grains at the same time, called “double Burgers orientation relation (DBOR)”, is introduced. This method is shown to be a powerful tool by which to analyze texture memory and ultimately provide predictive capabilities for texture changes during phase transformations. Variation in nucleation and growth rates on special boundaries and an extensive growth of selected variants are also described. Analysis of textures of commercially pure Ti observed in situ by pulsed neutron diffraction reveals that the texture memory in CP-Ti is indeed quite well predicted by consideration of the mechanism of DBOR. The analysis also suggests that the nucleation and growth rates on the special boundary of 90° rotation about $\langle2\bar{11}0\rangle$ α-hex should be about three times larger than those of the other special boundaries, and the selected variants should grow extensively into not only one parent grain but also other grains in α-hex(hexagonal)→β(bcc) transformation. The model calculations of texture development during two consecutive cycles of α-hex→β→α-hex transformation in CP-Ti and Zr are also shown.

36 MATERIALS SCIENCE↗

Imaging of Fibroblast Activation Protein Alpha Expression in a Preclinical Mouse Model of Glioma Using Positron Emission Tomography

Glioblastoma multiforme (GBM) is the most aggressive glioma of the primary central nervous system. Due to the lack of effective treatment options, the prognosis for patients remains bleak. Fibroblast activation protein alpha (FAP), a 170 kDa type II transmembrane serine protease was observed to be expressed on glioma cells and within the glioma tumor microenvironment. To understand the utility of targeting FAP in this tumor type, the immuno-PET radiopharmaceutical [ 89 Zr]Zr-Df-Bz-F19 mAb was prepared and Lindmo analysis was used for its in vitro evaluation using the U87MG cell line, which expresses FAP endogenously. Lindmo analysis revealed an association constant (K a ) of 10 -8 M -1 and an immunoreactivity of 52%. Biodistribution studies in U87MG tumor-bearing mice revealed increasing radiotracer retention in tumors over time, leading to average tumor-to-muscle ratios of 3.1, 7.3, 7.2, and 8.3 at 2, 24, 48 and 72 h, respectively. Small animal PET corroborated the biodistribution studies; tumor-to-muscle ratios at 2, 24, 48, and 72 h were 2.0, 5.0, 6.1 and 7.8, respectively. Autoradiography demonstrated accumulated activity throughout the interior of FAP + tumors, while sequential tumor sections stained positively for FAP expression. Conversely, FAP - tissues retained minimal radioactivity and were negative for FAP expression by immunohistochemistry. These results demonstrate FAP as a promising biomarker that may be exploited to diagnose and potentially treat GBM and other neuroepithelial cancers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical Behavior of Combinatorial Thin-Film Zr x Ta 1−x O y

Combinatorial magnetron sputtering and electrical characterization were used to systematically study the impact of compositional changes in the resistive switching of transition metal oxides, specifically the Zr x Ta 1−x O y system. Current-voltage behavior across a range of temperatures provided insights into the mechanisms that contribute to differences in the electrical conductivity of the pristine Ta 2 O 5 and ZrO 2 , and mixed Zr x Ta 1−x O y devices. The underlying conductive mechanism was found to be a mixture of charge trapping and ionic motion, where charge trapping/emission dictated the short-term cycling behavior while ion motion contributed to changes in the conduction with increased cycling number. ToF-SIMS was used to identify the origin of the “wake-up” behavior of the devices, revealing an ionic motion contribution. This understanding of how cation concentration affects conduction in mixed valence systems helps provide a foundation for a new approach toward manipulating resistive switching in these active layer materials.

36 MATERIALS SCIENCE↗

Meteoritic zircon.

Zircon identified in Vaca Muerta meteoritic specimens by electron probe microanalysis

METEORITIC COMPOSITION↗