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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Calibration and Performance of Germanium High Voltage Detectors for SuperCDMS SNOLAB

As SuperCDMS SNOLAB is getting ready to search for low mass dark matter particles, using cryogenic Ge and Si detectors, a set of six of the new SuperCDMS High Voltage (HV) detectors (four Ge and two Si) were tested in the Cryogenic Underground TEst facility (CUTE) at SNOLAB. This provided the first opportunity to gain experience with this new detector type and assess their performance thoroughly under low background conditions. Here we describe the SuperCDMS HV detector concept and discuss some of the newly developed analysis methods and approaches. Focusing on the Ge detectors, we investigate the detector performance under voltage bias (up to 90 V), exercise the low energy (keV to sub-keV range) calibration based on the electron capture peaks generated by the decay of $^{71}$Ge, assess the detector resolution, and demonstrate the unexpected (and encouraging) ability of these detectors to also measure high energy interactions in the hundreds of keV range with good resolution (better than 3% at 356 keV).

Albakry, M. F. [British Columbia U.; TRIUMF]↗
DOE OSTI2024

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Optically isolated logarithmic nanoammeter capable of floating to 5 kilovolts

A logarithmic current-measuring instrument was developed to measure plasma coupling currents at a common mode voltage of 5 kilovolts. Positive or negative currents can be measured from 10 to the -9th power to .001 ampere direct current. Optical isolation is used to control input switching and to provide data referenced to ground potential. Analog meter readouts as well as zero to five volt outputs are provided for peripheral data collection. Six independent channels are provided. Three measure positive currents, and three measure negative currents. Although designed for vacuum operation, it can be used equally well in air to measure low currents at high common mode voltages.

Sturman, J. C.↗
NASA NTRS2013

Carbon nanotube vacuum gauges with wide-dynamic range and processes thereof

A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures.

Manohara, Harish↗
NASA NTRS1977

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium/redox flow cells

The effect of acid concentration on the performance of the iron-titanium redox flow cell was studied. When the acidity was increased, open-circuit voltages decreased on the titanium side but load voltages increased due to decreased polarization. The best load voltage occurs when there is high acidity on the titanium side coupled with low acidity on the iron side, but such cells show voltage losses with repeated cycling because of the diffusion of acid through the membrane. No membrane tested has been found capable of maintaining the differences in acidity. Chelating agents show some promise in reducing polarization at the Ti electrode and thus improving energy efficiency.

Reid, M. A.↗
NASA NTRS1994

Wideband Linear Phase Modulator

Phase modulator for transmission in X band provides large phase deviation that remains nearly linear with voltage over relatively wide range. Operates with low loss over wide frequency band and with stable characteristics over wide temperature range. Phase modulator contains two varactor-diode phase shifters coupled via circulators. Separate drive circuit applies modulating voltages to varactor diodes. Modulation voltages vary in accordance with input to drive circuit.

Mysoor, Narayan R.↗
DOE OSTI2021

Impact of Stabilizing Cations on Lithium Intercalation in Tunneled Manganese Oxide Cathodes

Stabilizing cations such as K + , Ba 2+ , and Ag + are known to provide charge neutrality and enhance structural stability in low-cost tunneled manganese dioxide (MnO 2 ) cathodes for Li ion batteries. However, a fundamental understanding of the role of these cations in the electrochemical performance of tunneled MnO 2 cathodes remains unclear, especially at low stabilizing cation concentrations. Here, we employ density functional theory (DFT + U) calculations to reveal the impact of stabilizing potassium cation (K + ) concentration on the structural stability, electronic properties, and kinetics of lithium transport in 2 x 2 tunneled manganese oxide (α-K y Mn 8 O 16 , at y = 0, 1, and 2) battery cathodes during lithium intercalation. Specifically, we provide insights into the effect of K + ions on several critical factors governing the electrochemical storage performance of tunneled MnO2 cathodes, including (a) energetically favorable Li+ host sites, (ii) Li + and electron transport capabilities, (iii) optimal intercalation pathways, crystal distortion, microstructural stability, and tunneled-to-layer phase transformation as a function of lithium content, and (iv) cell output voltage profile. Interestingly, we find that low K + concentrations (y ≤ 1) yield partially cation-deficient tunnels in the MnO 2 cathode. Such unique tunnel structures in the cathode enable (a) low kinetic barriers for Li transport, (b) excellent thermodynamic stability of the tunneled structure even at a high Li + loading (up to ~ 0.625 Li/Mn), and (c) good electronic conductivity facilitated by Jahn-Teller distortions; all of which are critical for achieving high capacity batteries with enhanced rate capability. Additionally, these results provide perspectives to design low-cost transition metal oxide cathodes for high-performance Li-ion batteries with excellent cycle life.

25 ENERGY STORAGE↗
DOE OSTI2022

Iodine Electrochemistry Dictates Voltage‐Induced Halide Segregation Thresholds in Mixed‐Halide Perovskite Devices

Abstract Owing to straightforward stoichiometry–bandgap tunability, mixed‐halide perovskites are ideal for many optoelectronic devices. However, unwanted halide segregation under operational conditions, including light illumination and voltage bias, restricts practical use. Additionally, the origin of voltage‐induced halide segregation is still unclear. Herein, a systematic voltage threshold study in mixed bromide/iodide perovskite devices is performed and leads to observation of three distinct voltage thresholds corresponding to the doping of the hole transport material (0.7 ± 0.1 V), halide segregation (0.95 ± 0.05 V), and degradation (1.15 ± 0.05 V) for an optically stable mixed‐halide perovskite composition with a low bromide content (10%). These empirical threshold voltages are minimally affected by composition until very Br‐rich compositions, which reveals the dominant role of iodide/triiodide/iodine electrochemistry in voltage‐induced Br/I phase separation and transport layer doping reactions in halide perovskite devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Adroit Materials Final Scientific/Technical Report kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

The primary aim of this research was to develop GaN-based Junction Barrier Schottky (JBS) diodes using an innovative ion implantation process previously established in ARPA-E funded projects. The central focus of our proposed technology revolves around selective area p-type doping, accomplished through the implantation of Mg ions. This approach builds upon our successes in the ARPA-E PNDIODES program, advancing towards commercial device integration. Selective area p-doping plays a pivotal role in realizing the next generation of GaN-based power devices, capable of significantly reducing the carbon footprint in the United States by several million tons. While ion implantation is a well-established technique for achieving selective area doping in SiC and Si materials, its feasibility in GaN had not been demonstrated until now. To fabricate high voltage GaN JBS diodes, we initially created thick n-type drift layers with high carrier concentrations ranging from 5×1015 cm-3 to 2×1016 cm-3 and very high mobilities. Subsequently, Mg ions were selectively implanted to form p-type islands within the n-type drift layer. To reduce electric field crowding at the edge of the diode and to achieve high breakdown voltage, junction edge termination (JTE) and floating field rings (FFRs) were formed using Mg implantation. A high temperature, high-pressure post-implantation annealing process was carried out to activate the implanted Mg ions. As a result, we were able to demonstrate GaN JBS diodes with a breakdown voltage of 915 V and an on-resistance of 0.6 mΩ·cm2. These diodes exhibited a forward bias current density of 1 kA/cm2 at 1.5 V. Subsequently, we achieved GaN JBS diodes with a remarkable breakdown voltage of 1900 V and an on-resistance of 1.9 mΩ·cm2, capable of sustaining a forward bias current density of 0.5 kA/cm2 at 1.5 V. Importantly, the ON and OFF state performance of these GaN JBS diodes surpassed that of Si and SiC-based power diodes reported in existing literature. Lastly, we successfully grew 60 μm thick GaN:Si layers using HVPE with a carrier concentration of approximately 3 to 5×1015 cm-3. Based on simulation and empirical data these devices represent 5 kV GaN JBS power diodes, leveraging the developed processes in this project.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Molecular Tuning of Ether Cosolvent Chemistry for High-Voltage Sodium-Ion Batteries

Ethers as electrolyte cosolvents in sodium-ion batteries (SIBs) provide favorable Na + solvation and interfacial properties, but their low oxidative stability limits their use in high-voltage SIBs. Herein, we address this limitation via molecular tuning of ether cosolvents for high-voltage (4.2 V) hard carbon || NaNi 0.33 Fe 0.33 Mn 0.33 O 2 full cells. Tetrahydropyran (THP) is functionalized with a nitrile group to form tetrahydropyran-4-carbonitrile (THPCN). To delineate the effect of nitrile functionalization and benchmark ether against a conventional carbonate, THP, THPCN, and diethyl carbonate (DEC) are evaluated as cosolvents with ethylene carbonate. Nitrile functionalization lowers the HOMO energy of the ether, extends the electrolyte stability window, and alters Na⁺ solvation. Spectroscopic techniques and molecular dynamics simulations reveal that THPCN exhibits predominantly aggregate-dominated solvation (95.1 %) with weakened Na + -solvent interactions, producing the most anion-rich environment relative to DEC and THP cosolvents. THPCN-modified solvation promotes the formation of highly conductive, fluorine-enriched interphases that suppress parasitic reactions. Pouch full cells with THPCN sustained ~ 600 cycles at 4.2 V, outperforming THP and DEC. Operando gas analysis reveals that THPCN reduces CO 2 generation by 45% and H 2 generation by 30% relative to THP. Furthermore, the findings demonstrate nitrile functionalization as a molecular design strategy to stabilize ethers and enable high-voltage SIBs.

25 ENERGY STORAGE↗
NASA NTRS2021

Experimental Data on Open Circuit Voltage Characterization for Li-Ion Batteries

In this article, we present the datasets collected from nine different Li-ion batteries. These datasets contain voltage, current and time measurements during a full charge-discharge cycle of a battery at very low current (that is nearly at �/30 rate). Such low current rate data is suitable for open circuit voltage characterization. The collection of this data was done through the use of an Arbin battery cycler and a thermal chamber was used to control the test temperature. Data were collected over a wide range of temperatures from −25∘C to 50∘C.

Battery management system↗
NASA NTRS2015

In Flight Calibration of the Magnetospheric Multiscale Mission Fast Plasma Investigation

The Fast Plasma Investigation (FPI) on the Magnetospheric Multiscale mission (MMS) combines data from eight spectrometers, each with four deflection states, into a single map of the sky. Any systematic discontinuity, artifact, noise source, etc. present in this map may be incorrectly interpreted as legitimate data and incorrect conclusions reached. For this reason it is desirable to have all spectrometers return the same output for a given input, and for this output to be low in noise sources or other errors. While many missions use statistical analyses of data to calibrate instruments in flight, this process is difficult with FPI for two reasons: 1. Only a small fraction of high resolution data is downloaded to the ground due to bandwidth limitations and 2: The data that is downloaded is, by definition, scientifically interesting and therefore not ideal for calibration. FPI uses a suite of new tools to calibrate in flight. A new method for detection system ground calibration has been developed involving sweeping the detection threshold to fully define the pulse height distribution. This method has now been extended for use in flight as a means to calibrate MCP voltage and threshold (together forming the operating point) of the Dual Electron Spectrometers (DES) and Dual Ion Spectrometers (DIS). A method of comparing higher energy data (which has low fractional voltage error) to lower energy data (which has a higher fractional voltage error) will be used to calibrate the high voltage outputs. Finally, a comparison of pitch angle distributions will be used to find remaining discrepancies among sensors.

Detection-system↗
NASA NTRS2015

In Flight Calibration of the Magnetospheric Multiscale Mission Fast Plasma Investigation

The Fast Plasma Investigation (FPI) on the Magnetospheric Multiscale mission (MMS) combines data from eight spectrometers, each with four deflection states, into a single map of the sky. Any systematic discontinuity, artifact, noise source, etc. present in this map may be incorrectly interpreted as legitimate data and incorrect conclusions reached. For this reason it is desirable to have all spectrometers return the same output for a given input, and for this output to be low in noise sources or other errors. While many missions use statistical analyses of data to calibrate instruments in flight, this process is insufficient with FPI for two reasons: 1. Only a small fraction of high resolution data is downloaded to the ground due to bandwidth limitations and 2: The data that is downloaded is, by definition, scientifically interesting and therefore not ideal for calibration. FPI uses a suite of new tools to calibrate in flight. A new method for detection system ground calibration has been developed involving sweeping the detection threshold to fully define the pulse height distribution. This method has now been extended for use in flight as a means to calibrate MCP voltage and threshold (together forming the operating point) of the Dual Electron Spectrometers (DES) and Dual Ion Spectrometers (DIS). A method of comparing higher energy data (which has low fractional voltage error) to lower energy data (which has a higher fractional voltage error) will be used to calibrate the high voltage outputs. Finally, a comparison of pitch angle distributions will be used to find remaining discrepancies among sensors.

Heliophysics↗
NASA NTRS1981

High- and low-resistivity silicon solar cells

Attention is given to recent work at COMSAT Laboratories on improving silicon solar cell efficiencies and open-circuit voltages for both high (more than 1000 ohm-cm) and low (less than 1 ohm-cm) resistivities. It is noted that open-circuit voltages above 650 mV have been obtained for 0.1 ohm-cm cells and that air mass zero efficiencies of 12.5% have been measured from 4-mil 1,250 ohm-cm.

Meulenberg, A., Jr.↗
DOE OSTI2020

Membrane-Free Zn/MnO 2 Flow Battery for Large-Scale Energy Storage

The traditional Zn/MnO 2 battery has attracted great interest due to its low cost, high safety, high output voltage, and environmental friendliness. However, it remains a big challenge to achieve long-term stability, mainly owing to the poor reversibility of the cathode reaction. Different from previous studies where the cathode redox reaction of MnO 2 /MnOOH is in solid state with limited reversibility, in this work a new aqueous rechargeable Zn/MnO 2 flow battery is constructed with dissolution–precipitation reactions in both cathodes (Mn 2+ /MnO 2 ) and anodes (Zn 2+ /Zn), which allow mixing of anolyte and catholyte into only one electrolyte and remove the requirement for an ion selective membrane for cost reduction. Impressively, this new battery exhibits a high discharge voltage of ≈1.78 V, good rate capability (10C discharge), and excellent cycling stability (1000 cycles without decay) at the areal capacity ranging from 0.5 to 2 mAh cm -2 . More importantly, this battery can be readily enlarged to a bench scale flow cell of 1.2 Ah with good capacity retention of 89.7% at the 500th cycle, displaying great potential for large-scale energy storage.

25 ENERGY STORAGE↗
DOE OSTI2022

New bipolar host materials for high power efficiency green thermally activated delayed fluorescence $\mathrm{OLEDs}$

We report four bipolar molecules, namely m-CzPym, p-CzPym, m-CzTrz, and p-CzTrz, with carbazole (Cz) donor and a benzonitrile-substituted pyrimidine (Pym) or triazine (Trz) acceptor core were synthesized and characterized. The electron deficiency of heteroaryl cores together with the substitution pattern of benzonitrile were employed to tune the energy levels as well as the thermally activated delayed fluorescence (TADF) characteristics. The four molecules exhibited TADF behavior with inferior photoluminescent quantum yields (PLQYs) that limit their applications as emitters. These bipolar molecules were employed as TADF host materials for the benchmark TADF emitter 4CzIPN to achieve high-performing green TADF organic light-emitting diodes (OLEDs). Among the molecules, m-CzPym-hosted TADF-OLEDs achieved a maximum external quantum efficiency (EQE max ) of 31.5%, maximum power efficiency (PE max ) of 95.6 lm/W, and maximum current efficiency (CE max ) of 100.2 cd/A. Notably, p-CzPym-hosted TADF-OLEDs also achieved a PE max of 116.5 lm/W, turn-on voltage of 2.5 V, and impressive low efficiency roll-off performance (>89% of EQE max at 5000 cd/m 2 ), representing one of the highest efficiencies ever reported in 4CzIPN-doped devices. The high device efficiency can be ascribed to the balanced ambipolar carrier-transporting character of the host materials and high PLQY as well as the outstanding light outcoupling efficiency of the emitting layer.

42 ENGINEERING↗
DOE OSTI2025

Dual-ion ECRAM as a stable and accurate analog synapse

Electrochemical random-access memory (ECRAM) works by tuning the bulk electronic conductance of functional materials via reversible, electrochemical insertion of ions, resulting in stable analog resistive switching, attractive for analog in-memory and neuromorphic computing. However, achieving fast programming for training and long retention for inference has been elusive. Protonic ECRAM demonstrates fast programming but insufficient retention, while oxygen-based ECRAM with excellent retention requires elevated programming temperatures. Cu-based ECRAM offers a compromise, with an activation energy (E A ) of ≈0.76 eV between protons (E A ≈ 0.4 eV) and oxygen (E A > 1 eV), enabling extensive retention and room temperature programming. Combining Cu 2+ ions with protons to form a dual-ion ECRAM, we demonstrate two distinct switching behaviors: fast switching at ≤5 V, (E A ≈ 0.45 eV) via protons, and nonvolatile, room temperature switching at ≥8 V, with E A ≈ 0.76 eV via Cu 2+ ions. In conclusion, the Cu-based state exhibits a wide conductance range, with excellent retention, low noise, and linear current-voltage behavior, achieving digital-equivalent ImageNet inference accuracy.

analog in-memory computing↗
DOE OSTI2022

Nanoscale Control of the Metal–Insulator Transition at LaAlO 3 /KTaO 3 Interfaces

Recent reports of superconductivity at KTaO 3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO 3 (STO)-based heterostructures. Here, we report the reconfigurable creation of conducting structures at intrinsically insulating LaAlO 3 / KTO(110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostruc-tures: (1) conductive atomic-force microscopy lithography and (2) ultralow-voltage electron-beam lithography. At low temperatures, KTO(110)-based devices show superconductivity that is tunable by an applied back gate. A one-dimensional nanowire device shows single-electron-transistor (SET) behavior. A KTO(111)-based device is metallic but does not become superconducting. Finally, these reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗