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At least 1,243 records · Page 69

Mapping resonant inelastic x-ray scattering onto electronic structure of iridium compounds

Resonant inelastic X-ray scattering (RIXS) is an indispensable tool that can selectively probe the electronic structure of active sites in energy conversion systems, for example, iridium oxides. However, decoding the RIXS spectra remains challenging due to its inherently complex many-body interactions. Here, we analyze Ir L 3 edge RIXS spectra of Ir, IrCl 3 , and IrO 2 , employing the joint density of states (JDOS) calculated directly from electronic band-structure calculations. The overall energy-loss features in the RIXS spectra are well reproduced by the JDOS, reaffirming the close correspondence between electron–hole excitations and RIXS spectra observed in prior studies. Intriguingly, the RIXS spectra above ∼4 eV in metallic Ir and IrO 2 follow a power-law behavior, 𝐼 RIXS ~Δ −𝑝 , where Δ is the energy loss and p is the associated power-law exponent. This is consistent with edge-singularity behavior commonly found in resonant X-ray scattering from metallic samples. Furthermore, orbital-projected JDOS enables a decomposition of the IrO 2 spectrum into specific dd transitions, providing a clear interpretation of orbital excitations and an efficient strategy for decoding RIXS spectra in iridium-based energy conversion systems.

5d↗

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Abstract Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local interconnects are identified that have the potential to outperform ruthenium, the current state‐of‐the‐art post‐Cu material, and also semi‐global interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local interconnects.

Chemistry↗

Non‐Linear Optical Properties of the ( RE ) 3 CuGeS 7 Family of Compounds

Abstract Non‐linear optical materials must possess a balanced combination of laser‐induced damage threshold (LDT) and second‐harmonic generation (SHG) and be phase matchable. In our previous work, chiral and polar La 3 CuGeS 7 was identified as a promising non‐linear optical material. Herein, we report the optimization of non‐linear optical properties through replacement of La with smaller lanthanides. It is determined that Gd 3 CuGeS 7 exhibits the best combination of SHG (1.6× AgGaS 2 at 88–105 μm particle size) and LDT (3× AgGaS 2 , 89 MW/cm 2 ) and is phase matchable. Based on changes in metal‐sulfur bond lengths and angles, we further propose structural optimization through solid‐solution formation and doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vapor-phase grafting of a model aminosilane compound to Al 2 O 3 , ZnO, and TiO 2 surfaces prepared by atomic layer deposition

Atomic layer deposition (ALD) is a highly versatile surface functionalization technique that can conformally coat both planar and porous substrates. Here we use ALD metal oxide layers to establish a well-defined starting surface for vapor-phase surface organic modification. Vapor-phase (3-aminopropyl)triethoxysilane (APTES) surface silanization of ALD Al 2 O 3 , ZnO and TiO 2 surfaces were studied at 100 °C, 150 °C and 200 °C. In situ quartz crystal microbalance (QCM) and Fourier-transform infrared (FTIR) spectroscopy measurements, and ex situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) measurements showed uniform monolayer silane formation through self-limiting APTES reaction. We observed a higher surface density of grafted APTES species following silanization at 100 °C compared to 200 °C, and we attribute this to the temperature-dependent reactivity of the surface hydroxyls and changes in the mode of APTES reaction. The FTIR and XPS measurements revealed that APTES reacts with Al 2 O 3 and ZnO exclusively through metal siloxy bond formation. However, APTES reacts with TiO 2 through both siloxy bond formation and ammonium salt formation via the amine group.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗