Thermal instabilities limiting power dissipation in transistors.
Second breakdown and other thermal instabilities analyzed by heat flow equation, obtaining stability criteria predicting reduced power dissipation for transistor at low currents
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Second breakdown and other thermal instabilities analyzed by heat flow equation, obtaining stability criteria predicting reduced power dissipation for transistor at low currents
Cryogenic, three-terminal device yields current-voltage characteristics of ordinary transistor. Device consists of two superconducting tin rods in a crossed-wire geometry, separated by a thin gold film. New construction technique is described and possible applications are discussed.
Circuit design and performance of transistorized multivibrator
Fabrication and electrical properties of GaAs type thin film bipolar transistors
Ionization induced surface effects on transistors
Mechanical design modifications, processing, and test data for high power, low saturation voltage, multi-chip silicon switching transistor
Low temperature semiconductor deposition techniques in fabricating thick film, insulated gate, field effect transistors
Linear sawtooth voltage wave generator with transistor timing circuit having capacitor and zener diode feedback loops
Switching circuit with regeneratively connected transistors eliminating power consumption when not in use
Two dimensional numerical analysis of current saturation mechanism for junction field effect transistors with small and large length-to-width ratio values
Nonuniform emitter current distribution effect on power transistor thermal stability, discussing temperature distribution effects
Two new processes form complementary transistors in monolithic semiconductor circuits, require fewer steps /infusions/ than previous methods, and eliminate such problems as nonuniform h sub FE distribution, low yield, and large device formation.
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.
Development of GaAs and GaAs/1-xPx thin film bipolar transistors
Broadband distribution amplifier with complementary pair transistor output stages
Rectification efficiency and reliability of driven transistor synchronous rectifiers