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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Evaluation of Thin Kevlar-Epoxy Fabric Panels Subjected to Shear Loading

The results of an analytical and experimental investigation of 4-ply Kevlar-49-epoxy panels loaded by in-plane shear are presented. Approximately one-half of the panels are thin-core sandwich panels and the other panels are solid-laminate panels. Selected panels were impacted with an aluminum sphere at a velocity of either 150 or 220 ft/sec. The strength of panels impacted at 150 ft/sec was not reduced when compared to the strength of the undamaged panels, but the strength of panels impacted at 220 ft/sec was reduced by 27 to 40 percent. Results are presented for panels that were cyclically loaded from a load less than the buckling load to a load in the postbuckling load range. The thin-core sandwich panels had a lower fatigue life than the solid panels. The residual strength of the solid and sandwich panels cycled more than one million cycles exceeded the baseline undamaged panel strengths. The effect of hysteresis in the response of the sandwich panels is not significant. Results of a nonlinear finite element analysis conducted for each panel design are presented.

Baker, Donald J.↗
NASA NTRS1996

Spline Approximation of Thin Shell Dynamics

A spline-based method for approximating thin shell dynamics is presented here. While the method is developed in the context of the Donnell-Mushtari thin shell equations, it can be easily extended to the Byrne-Flugge-Lur'ye equations or other models for shells of revolution as warranted by applications. The primary requirements for the method include accuracy, flexibility and efficiency in smart material applications. To accomplish this, the method was designed to be flexible with regard to boundary conditions, material nonhomogeneities due to sensors and actuators, and inputs from smart material actuators such as piezoceramic patches. The accuracy of the method was also of primary concern, both to guarantee full resolution of structural dynamics and to facilitate the development of PDE-based controllers which ultimately require real-time implementation. Several numerical examples provide initial evidence demonstrating the efficacy of the method.

delRosario, R. C. H.↗
NASA NTRS1994

Thermal Cycling of Thin and Thick Ply Composites

An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE's of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE's of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.

Tompkins, Stephen S.↗
NASA NTRS1995

PZT Thin Film Piezoelectric Traveling Wave Motor

With the development of micro-electro-mechanical systems (MEMS), its various applications are attracting more and more attention. Among MEMS, micro motors, electrostatic and electromagnetic, are the typical and important ones. As an alternative approach, the piezoelectric traveling wave micro motor, based on thin film material and integrated circuit technologies, circumvents many of the drawbacks of the above mentioned two types of motors and displays distinct advantages. In this paper we report on a lead-zirconate-titanate (PZT) piezoelectric thin film traveling wave motor. The PZT film with a thickness of 150 micrometers and a diameter of 8 mm was first deposited onto a metal substrate as the stator material. Then, eight sections were patterned to form the stator electrodes. The rotor had an 8 kHz frequency power supply. The rotation speed of the motor is 100 rpm. The relationship of the friction between the stator and the rotor and the structure of the rotor on rotation were also studied.

Shen, Dexin↗
NASA NTRS1996

Microstructural Characterization of Thin Polyimide Films by Positron Lifetime Spectroscopy

Positron lifetimes have been measured in a series of thin aromatic polyimide films. No evidence of positronium formation was observed in any of the films investigated. All test films exhibited only two positron lifetime components, the longer component corresponding to the positrons annihilating at shallow traps. Based on these trapped positron lifetimes, free volume fractions have been calculated for all the films tested. A free volume model has been developed to calculate the dielectric constants of thin polyimide films. The experimental and the calculated values for the dielectric constants of the films tested are in reasonably good agreement. It has been further noted that the presence of bulky CF(sub 3) groups and meta linkages in the polyimide structure results in higher free volume fraction and, consequently, lower dielectric constant values for the films studied.

Eftekhari, A.↗
NASA NTRS1996

Computational Simulation of Damage Progression of Composite Thin Shells Subjected to Mechanical Loads

Defect-free and defected composite thin shells with ply orientation (90/0/+/-75) made of graphite/epoxy are simulated for damage progression and fracture due to internal pressure and axial loading. The thin shells have a cylindrical geometry with one end fixed and the other free. The applied load consists of an internal pressure in conjunction with an axial load at the free end, the cure temperature was 177 C (350 F) and the operational temperature was 21 C (70 F). The residual stresses due to the processing are taken into account. Shells with defect and without defects were examined by using CODSTRAN an integrated computer code that couples composite mechanics, finite element and account for all possible failure modes inherent in composites. CODSTRAN traces damage initiation, growth, accumulation, damage propagation and the final fracture of the structure. The results show that damage initiation started with matrix failure while damage/fracture progression occurred due to additional matrix failure and fiber fracture. The burst pressure of the (90/0/+/- 75) defected shell was 0.092% of that of the free defect. Finally the results of the damage progression of the (90/0/+/- 75), defective composite shell was compared with the (90/0/+/- theta, where theta = 45 and 60, layup configurations. It was shown that the examined laminate (90/0/+/- 75) has the least damage tolerant of the two compared defective shells with the (90/0/+/- theta), theta = 45 and 60 laminates.

Gotsis, P. K.↗
NASA NTRS1993

Hybrid Analytical Technique for Nonlinear Vibration Analysis of Thin-Walled Beams

A two-step hybrid analytical technique is presented for the nonlinear vibration analysis of thin-walled beams. The first step involves the generation of various-order perturbation functions using the Linstedt-Poincare perturbation technique. The second step consists of using the perturbation functions as coordinate (or approximation) functions and then computing both the amplitudes of these functions and the nonlinear frequency of vibration via a direct variational procedure. The analytical formulation is based on a form of the geometrically nonlinear beam theory with the effects of in-plane inertia, rotatory inertia, and transverse shear deformation included. The effectiveness of the proposed technique is demonstrated by means of a numerical example of thin-walled beam with a doubly symmetric I-section. The solutions obtained using a single-spatial mode were compared with those obtained using multiple-spatial modes. The standard of comparison was taken to be the frequencies obtained by the direct integration/fast Fourier transform (FFT) technique. The nonlinear frequencies obtained by the hybrid technique were shown to converge to the corresponding ones obtained by the direct integration/fast Fourier transform (FFT) technique well beyond the range of applicability of the perturbation technique. The frequencies and total strain energy of the beam were overestimated by using a single-spatial mode.

Noor, Ahmed K.↗
NASA NTRS1997

Ultra-Low-Cost Room Temperature SiC Thin Films

The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

Faur, Maria↗
NASA NTRS1993

Thin-Film Selective Emitter

Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

Chubb, Donald L.↗
NASA NTRS1998

High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin Oxide

A stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage factor make these semiconducting oxide films promising candidates for the active strain elements in high temperature thin film strain gages, particularly in applications where static strain measurement is desired.

Gregory, Otto J.↗
NASA NTRS1999

Electrostatic Discharge Effects on Thin Film Resistors

Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

Sampson, Michael J.↗
NASA NTRS1997

An Experimental Study of a Radially Arranged Thin Film Heat Flux Gauge

A new thin-film heat-flux gauge was designed and fabricated on three different substrate materials. Forty pairs of Pt-Pt/10% Rh thermocouple junctions were deposited in a circular pattern on the same plane of the substrate. Over the thermocouples, 5 and 10 micron thick thermal resistance layers were deposited to create a temperature gradient across those layers. Calibration and testing of these gauges were carried out in an arc-lamp calibration facility. The heat flux calculated from the gauge output is in good agreement with the value obtained from the pre-calibrated standard sensor. A CO2 laser was also used to test the steady-state and dynamic responses of the heat-flux gauge. During the steady-state test, the time constant for the heating period was 30 s. The frequency response of the heat-flux gauge was measured in the frequency domain using a CO2 laser and a chopper. The responses from an infrared detector and the heat-flux gauge were measured simultaneously and compared. It was found that the thin-film heat-flux gauge has a dynamic frequency response of 3 kHz.

Cho, Christoper S. K.↗
NASA NTRS1997

Steady-State and Frequency Response of a Thin-Film Heat Flux Gauge

A new and simpler design of thin-film heat flux gauge has been developed for use In high-heat-flux environments. Heat flux gauges of the same design were fabricated on three different substrates and tested. The heat flux gauge comprises a thermopile and a thermocouple junction, which measures the surface temperature. The thermopile has 40 pairs of S-type thermocouples and is covered by two thermal resistance layers. Calibration and testing of these gauges were first carried out in an arc-lamp calibration facility. Sensitivity of the gauge was discussed in terms of the relative conductivity and surface temperature. The heat flux calculated from the gauge output was In good agreement with the precalibrated standard sensor. The steady-state and the transient response characteristics of the heat flux gauge were also investigated using a carbon dioxide pulse laser as a heat source. The dynamic frequency response was evaluated in terms of the nondimensional amplitude ratio with respect to the frequency spectrum of a chopped laser bcam. The frequency response of the gauge was determined to be about 3 kHz. The temperature profiles in the thin-film heat flux gauge were obtained numerically in steady-state conditions using FLUENT and compared with the experimental results.

Fralick, Gustave C.↗
NASA NTRS1998

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Hollingsworth, Jennifer A.↗
NASA NTRS1999

Electrostatic Discharge (ESD) Failures in Thin Film Resistors

Field failures of nichrome thin film resistors have been investigated recently for several pieces of space flight hardware. These failures have involved resistance shifts ranging from a few percent to complete open circuits. Failure analysis and duplication of these failures have revealed that the failures were caused by electrostatic discharge. The failure characteristics and the circuit conditions necessary for failure have been studied for several types of thin film resistors including nichrome and tantalum nitride resistive elements. The effects of latent damage and resistive pattern design will also be discussed.

Hull, Scott M.↗
NASA NTRS2000

Method of Forming Micro-Sensor Thin-Film Anemometer

A device for measuring turbulence in high-speed flows is provided which includes a micro- sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14 deg half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

Sheplak, Mark↗
NASA NTRS1999

Low Loss, Finite Width Ground Plane, Thin Film Microstrip Lines on Si Wafers

Si RFICs on standard, 2 Omega-cm. Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called Thin Film Microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 Omega-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.

Ponchak, George E.↗
NASA NTRS1999

Thin Film Li Ion Microbatteries for NASA Applications

Rechargeable thin film microbatteries have recently become the topic of widespread research for use in low power applications such as battery-backed CMOS memory, miniaturized implantable medical devices and smart cards. In particular, the Center for Integrated Space Microsystems (CISM) at NASA's Jet Propulsion Laboratory has interest in applying this technology for secondary power systems in miniaturized satellites, microsensors, microactuators and other remote MEMS applications. The general requirements of the microbatteries for these applications are high specific energy, wide range of temperature stability. low self-discharge rate, and flexibility of cell design. The thin film Li ion materials system using LiCoO2(LiPO(x)N(1-x))SnO is expected to fulfill these requirements.

West, W. C.↗