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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69

Effect of Temperature and FEC on Silicon Anode Heat Generation Measured by Isothermal Microcalorimetry

Isothermal microcalorimetry (IMC) was used to better understand parasitic reactions and heat generation from Si electrodes in the first 10 cycles using Li/Si half cells. Heat generation from cell polarization (ohmic heat), entropy changes (reversible heat), and parasitic reactions (parasitic heat) are separated and quantified. The effect of temperature and fluoroethylene carbonate (FEC) as an electrolyte additive are also explored. Our results show that at the C/10 cycling rate used here, ohmic heat makes the largest contribution to overall heat generation while reversible heat is the smallest. Ohmic heat generation increases with cycle number due to increasing internal resistance, though the effect is smaller for cells with FEC. Interestingly, capacity-normalized parasitic heat generation is largely unaffected by changes in temperature despite differing reaction kinetics. We show that this is caused by a decrease in average parasitic reaction enthalpy as temperature is increased. Further, cells with FEC display higher average parasitic reaction enthalpy than cells without. The average parasitic reaction enthalpies for all the Si electrodes we tested were lower than previously reported values for graphite, indicating that the SEI formed on Si is less stable.

25 ENERGY STORAGE↗

Role of Oxygen on Chemical Segregation in Uncapped Ge 2 Sb 2 Te 5 Thin Films on Silicon Nitride

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this paper, the segregation of Ge in a Ge 2 Sb 2 Te 5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. Furthermore, Ge 2 Sb 2 Te 5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O island boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and can significantly impact its electrical and thermal properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Long interior carrier lifetime in selective-area InAs nanowires on silicon

Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s - 1 . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.

36 MATERIALS SCIENCE↗

Excess carrier concentration in silicon devices and wafers: How bulk properties are expected to accelerate light and elevated temperature degradation

Light and elevated temperature induced degradation (LeTID) is accelerated nearly linearly by the presence of excess carriers. It is therefore important to understand how excess carrier concentration (Δn) changes as a function of exposure conditions, materials properties, and sample structure. We simulate Δn as a function of wafer thickness and bulk minority carrier lifetime (τ) in solar cells and wafers using SCAPS and Quokka3. We also derive closed-form analytic expressions. For wafers, there is a near-linear relationship between Δn and τ or thickness, whereas for solar cells, Δn in the bulk may become limited by rear surface recombination. Thus, LeTID may progress more quickly in wafers than in cells, with a stronger dependence on τ. When comparing experiments, observed degradation rates must be corrected between samples or conditions to account for differences in Δn. This study demonstrates three tools to estimate the magnitude of such corrections, which can aid in the quantitative interpretation of LeTID data and performance predictions. Finally, while each tool yields similar results, there are advantages to each approach that must be weighed in terms of simplicity of inputs versus sophistication of treatment. Incomplete specification of back contact characteristics in commercial products is identified as an important contributor to uncertainty in expected LeTID rates.

36 MATERIALS SCIENCE↗

Impurity Characterization in Device Quality Hot Filament Chemical Vapor Deposition (HFCVD) Grown 3C Silicon Carbide (3C-SiC) (CRADA CRD-17-00684 Final Report)

BASiC-3C needs advanced characterization of material properties to continue making progress towards high quality 3C-SiC. For over 190 growth runs, BASiC 3C has relied almost exclusively on feedback from commercially available metrology such as cross-sectional FESEM, AFM, Raman, XRD and SIMS. This standard feedback loop has enabled BASiC 3C to "rough-in" growth conditions and achieve growth of epitaxial growth over a 4" wafer size, at respectable growth rates. Still, the material quality deduced from X-ray rocking FWMH and APB density must be further improved to be viable for our industry partners. Electron Spin Resonance (EPR) and time-resolved photoluminescence (TRPL) data and interpretation by an experienced scientist is identified as a critical, yet not commercially readily available feedback that would enable further material improvement.

36 MATERIALS SCIENCE↗

Development of Monitoring Techniques for Binderjet Additive Manufacturing of Silicon Carbide Structures

The Transformational Challenge Reactor (TCR) program is leveraging additive manufacturing (AM) technologies to fabricate nuclear components to be assembled into a fully functional microreactor core. Compared with traditional manufacturing technologies, AM technologies allow (1) observation of the manufacturing process at a much higher resolution in real-time using in situ monitoring technologies to capture the sensor signature that scientifically describes each event occurring over time and space and (2) validation of the manufacturing process quality using domain-informed data analytics techniques as a potential qualification and certification methodology for the final component. This report provides an update on the program work on binder jetting in situ process monitoring and associated data analytics results, as well as sample placement and tracking for the subsequent chemical vapor infiltration (CVI) process. Examples are provided to illustrate the progress. Elements of the Digital Thread and data management are discussed in the main document, and an extensive supplemental material section is provided detailing the Digital Platform, as well as its implementation and components. In conclusion the path forward for the next fiscal year is discussed.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Silicon-Equivalent Neutron Dose Estimations

Radiation transport calculations are often used to estimate dose or exposure to components and personnel surrounding a radiation source. The sources for these calculations are decaying radionuclides within the various nuclear materials. Under long-term radiation exposure, some components may show signs of material damage such as hardening, cracking, discoloration, etc. resulting from the dose received from nearby radioactive sources. Radiation dose quantities are a useful means to correlate material damage or degradation to radiation interactions. The degradation is often dependent on how incident radiation interacts and deposits energy into the material. This dependence implies that radiation dose should be properly defined for the material effect of interest. Generic dose quantities, such as total energy deposited, may not necessarily correlate well for degradation of any given material.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗