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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Ag{sup +12} ion induced modifications of structural and optical properties of ZnO-PMMA nanocomposite films

The influence of swift heavy ion (SHI) irradiation on structural and photoluminescence (PL) properties of ZnO-PMMA nanocomposite films, prepared by solution casting method, was studied. The ZnO-PMMA nanocomposite films were irradiated using 120 MeV Ag{sup +12} ions at different fluences varying from 1 Multiplication-Sign 10{sup 11} to 1 Multiplication-Sign 10{sup 13} ions/cm{sup 2}. The intensity of the X-ray diffraction peaks is increased at the high fluence, without evolution of any new peak. A shift in absorption edge (i.e. shift in optical band gap) towards higher wavelength was observed after irradiation and PL from ZnO-PMMA nanocomposite films is found to increase up to a critical fluence and then found to be suppressed for higher fluence (1 Multiplication-Sign 10{sup 12} ion/cm{sup 2}). The change in photoluminescence after irradiation can be attributed to the change in microstructure of PMMA matrix as well as the agglomeration of ZnO nanoparticles.

36 MATERIALS SCIENCE↗
DOE OSTI2013

175 MeV Au{sup +13} ion irradiation induced structural and morphological modifications in zinc oxide thin films

Thin films of ZnO were deposited, on Si substrates, using the RF-sputtering technique and irradiated by the 175 MeV Au{sup +13} beams. The structural changes were investigated by x-ray diffraction (XRD) measurements. The particle size found to increase with the increasing ion fluence up to 1 Multiplication-Sign 10{sup 12} ion/cm{sup 2}. At highest irradiation fluence of 5 Multiplication-Sign 10{sup 12} ion/cm{sup 2} the average particle size decreases. The Raman spectroscopy measurements were performed to understand the local phonon mode of the samples. The surface morphology of the as-deposited and irradiated thin films is measured by the Atomic Force Microscopy (AFM).

36 MATERIALS SCIENCE↗
DOE OSTI2013

Modification of organosilicate glasses low-k films under extreme and vacuum ultraviolet radiation

Degradation of chemical composition of porous low-k films under extreme and various vacuum ultraviolet emissions is studied using specially developed sources. It is shown that the most significant damage is induced by Xe line emission (147 nm) in comparison with Ar (106 nm), He (58 nm), and Sn (13.5 nm) emissions. No direct damage was detected for 193 nm emission. Photoabsorption cross-sections and photodissociation quantum yields were derived for four films under study. 147 nm photons penetrate deeply into low-k films due to smaller photoabsorption cross-section and still have sufficient energy to excite Si-O-Si matrix and break Si-CH{sub 3} bonds.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Induction of electron injection and betatron oscillation in a plasma-waveguide-based laser wakefield accelerator by modification of waveguide structure

By adding a transverse heater pulse into the axicon ignitor-heater scheme for producing a plasma waveguide, a variable three-dimensionally structured plasma waveguide can be fabricated. With this technique, electron injection in a plasma-waveguide-based laser wakefield accelerator was achieved and resulted in production of a quasi-monoenergetic electron beam. The injection was correlated with a section of expanding cross-section in the plasma waveguide. Moreover, the intensity of the X-ray beam produced by the electron bunch in betatron oscillation was greatly enhanced with a transversely shifted section in the plasma waveguide. The technique opens a route to a compact hard-X-ray pulse source.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Strain-induced modification in the magnetic properties of Mn{sub 5}Ge{sub 3} thin films

Epitaxial ferromagnetic Mn{sub 5}Ge{sub 3} thin films were stabilized on GaSb(001) and GaAs(001) substrates using molecular beam epitaxy. Compared to bulk Mn{sub 5}Ge{sub 3} materials, an enhancement of the Curie temperature above 350 K and about 320 K was observed for Mn{sub 5}Ge{sub 3}/GaAs(001) and Mn{sub 5}Ge{sub 3}/GaSb(001) heterostructures, respectively. The magnetization was found to decrease from 323 to 245 emu/cm{sup 3} for films grown on GaSb(001) and GaAs(001). Anomalous Hall effect measurements provide evidence of the strain-induced large spin polarization from density-functional study. Furthermore, our calculated results in bulk Mn{sub 5}Ge{sub 3} under strain indicate that the strain is the origin of different physical properties of Mn{sub 5}Ge{sub 3} grown on different substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Modification of polymer velvet cathode via metallic Mo coating for enhancement of high-current electron emission performances

The effect of surface Mo coating on the high-current electron emission performances for polymer velvet cathode has been investigated in a diode with A-K gap of 11.5 cm by the combination of time-resolved electrical diagnostic and temporal pressure variation. Compared with uncoated polymer velvet cathode under the single-pulsed emission mode, the Mo-coated one shows lower outgassing levels (∼0.40 Pa L), slower cathode plasma expansion velocity (∼2.30 cm/μs), and higher emission stability as evidences by the change in cathode current, temporal pressure variation, and diode perveance. Moreover, after Mo coating, the emission consistency of the polymer velvet cathode between two adjacent pulses is significantly improved in double-pulsed emission mode with ∼500 ns interval between two pulses, which further confirms the effectiveness of Mo coating for enhancement of electron emission performance of polymer velvet cathodes. These results should be of interest to the high-repetitive high-power microwave systems with cold cathodes.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Ultrafast laser induced electronic and structural modifications in bulk fused silica

Ultrashort laser pulses can modify the inner structure of fused silica, generating refractive index changes varying from soft positive (type I) light guiding forms to negative (type II) values with void presence and anisotropic sub-wavelength modulation. We investigate electronic and structural material changes in the type I to type II transition via coherent and incoherent secondary light emission reflecting free carrier behavior and post-irradiation material relaxation in the index change patterns. Using phase contrast microscopy, photoluminescence, and Raman spectroscopy, we determine in a space-resolved manner defect formation, redistribution and spatial segregation, and glass network reorganization paths in conditions marking the changeover between type I and type II photoinscription regimes. We first show characteristic patterns of second harmonic generation in type I and type II traces, indicating the collective involvement of free carriers and polarization memory. Second, incoherent photoemission from resonantly and non-resonantly excited defect states reveals accumulation of non-bridging oxygen hole centers (NBOHCs) in positive index domains and oxygen deficiency centers (ODCs) with O{sub 2}{sup −} ions segregation in void-like regions and in the nanostructured domains, reflecting the interaction strength. Complementary Raman investigations put into evidence signatures of the different environments where photo-chemical densification (bond rearrangements) and mechanical effects can be indicated. NBOHCs setting in before visible index changes serve as precursors for subsequent compaction build-up, indicating a scenario of cold, defect-assisted densification for the soft type I irradiation regime. Additionally, we observe hydrodynamic effects and severe bond-breaking in type II zones with indications of phase transition. These observations illuminate densification paths in fused silica in low power irradiation regimes, and equally in energetic ranges, characterized by the onset of thermo-mechanical effects.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Strain induced modification in phonon dispersion curves of monolayer boron pnictides

In the frame work of density functional theory, the biaxial strain induced phonon dispersion curves of monolayer boron pnictides (BX, X = N, P, As, and Sb) have been investigated. The electron-ion interactions have been modelled using ultrasoft pseudopotentials while exchange-correlation energies have been approximated by the method of local density approximation in the parameterization of Perdew-Zunger. The longitudinal and transverse acoustic phonon modes of boron pnictide sheets show linear dependency on wave vector k{sup →} while out of plane mode varies as k{sup 2}. The in-plane longitudinal and out of plane transverse optical modes in boron nitride displaying significant dispersion similar to graphene. We have analyzed the biaxial strain dependent behaviour of out of plane acoustic phonon mode which is linked to ripple for four BX sheets using a model equation with shell elasticity theory. The strain induces the hardening of this mode with tendency to become more linear with increase in strain percentage. The strain induced hardening of out of plane acoustic phonon mode indicates the absence of rippling in these compounds. Our band structure calculations for both unstrained and strained 2D h-BX are consistent with previous calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dynamics of modification of Ni/n-GaN Schottky barrier diodes irradiated at low temperature by 200 MeV Ag{sup 14+} ions

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 × 10{sup 11} ions/cm{sup 2} at the substrate temperature of 80 K. Post-irradiation current-voltage measurements showed that the ideality factor, n increased and the reverse leakage current, I{sub R} decreased with increase in fluence. But Schottky barrier height, ϕ{sub b} increased only marginally with increase in ion fluence. In situ resistivity measurements showed orders of magnitude increase in resistivity of GaN epitaxial film with irradiation fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Irreversible modification of magnetic properties of Pt/Co/Pt ultrathin films by femtosecond laser pulses

Annealing ultrathin Pt/Co/Pt films with single femtosecond laser pulses leads to irreversible spin-reorientation transitions and an amplification of the magneto-optical Kerr rotation. The effect was studied as a function of the Co thickness and the pulse fluence, revealing two-dimensional diagrams of magnetic properties. While increasing the fluence, the creation of two branches of the out-of-plane magnetization state was found.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

In situ controlled modification of the helium density in single helium-filled nanobubbles

We demonstrate that the helium density and corresponding pressure can be modified in single nano-scale bubbles embedded in semiconductors by using the electron beam of a scanning transmission electron microscope as a multifunctional probe: the measurement probe for imaging and chemical analysis and the irradiation source to modify concomitantly the pressure in a controllable way by fine tuning of the electron beam parameters. The control of the detrapping rate is achieved by varying the experimental conditions. The underlying physical mechanisms are discussed; our experimental observations suggest that the helium detrapping from bubbles could be interpreted in terms of direct ballistic collisions, leading to the ejection of the helium atoms from the bubble.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Carbon nanotubes and carbon onions for modification of styrene-acrylate copolymer based nanocomposites

Styrene acrylate polymer (SAC) nanocomposites with various carbon nanofillers (multiwalled carbon nanotubes MWCNTs and onion like carbon OLC) are manufactured by means of latex based routes. Concentration of the carbon nanofillers is changed in a broad interval starting from 0.01 up to 10 wt. %. Elastic, dielectric and electromagnetic properties of SAC nanocomposites are investigated. Elastic modulus, electrical conductivity and electromagnetic radiation absorption of the investigated SAC nanocomposites increase along with rising nanofiller content. The effect of the addition of anisometric MWCNTs on the elastic properties of the composite is higher than in the case of the addition of OLC. Higher electrical conductivity of the OLC containing nanocomposites is explained with the fact that reasonable agglomeration of the nanofiller can promote the development of electrically conductive network. Efficiency of the absorption of electromagnetic radiation depends on the development of conductive network within the SAC matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74 mA·cm{sup −2} and open-circuit voltage (V{sub oc}) is 1.62 V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced surface flashover strength in vacuum of polymethylmethacrylate by surface modification using atmospheric-pressure dielectric barrier discharge

Polymer materials, such as polymethylmethacrylate (PMMA), are widely used as insulators in vacuum. The insulating performance of a high-voltage vacuum system is mainly limited by surface flashover of the insulators rather than bulk breakdown. Non-thermal plasmas are an efficient method to modify the chemical and physical properties of polymer material surfaces, and enhance the surface insulating performance. In this letter, an atmospheric-pressure dielectric barrier discharge is used to treat the PMMA surface to improve the surface flashover strength in vacuum. Experimental results indicate that the plasma treatment method using Ar and CF{sub 4} (10:1) as the working gas can etch the PMMA surface, introduce fluoride groups to the surface, and then alter the surface characteristics of the PMMA. The increase in the surface roughness can introduce physical traps that can capture free electrons, and the fluorination can enhance the charge capturing ability. The increase in the surface roughness and the introduction of the fluoride groups can enhance the PMMA hydrophobic ability, improve the charge capturing ability, decrease the secondary electron emission yield, increase the surface resistance, and improve the surface flashover voltage in vacuum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

60 keV Ar⁺-ion induced modification of microstructural, compositional, and vibrational properties of InSb

Room temperature irradiation of InSb(111) by 60 keV Ar⁺-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1×10¹⁷ to 3×10¹⁸ ions cm⁻². While a porous layer comprising of a network of interconnected nanofibers was generated by normal ion incidence, evolution of plate-like structures was observed for obliquely incident ions. Systematic studies of composition and structure using energy dispersive x-ray spectroscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, Raman mapping, grazing incidence x-ray diffraction, and cross-sectional transmission electron microscopy revealed a high degree of oxidation of the ion-induced microstructures with the presence of In₂O₃ and Sb₂O₃ phases and presence of nanocrystallites within the nanoporous structures. The observed structural evolution was understood in terms of processes driven by ion-induced defect accumulation within InSb.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Surface modification of structural materials by low-energy high-current pulsed electron beam treatment

Microstructure formation in surface layers of pure titanium and ferritic-martensitic steel subjected to electron beam treatment is studied. It is shown that low energy high-current pulsed electron beam irradiation leads to the martensite structure within the surface layer of pure titanium. Contrary, the columnar ferrite grains grow during solidification of ferritic-martensitic steel. The effect of electron beam energy density on the surface morphology and microstructure of the irradiated metals is demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural and optical modification in Bi doped As{sub 40}S{sub 60} thin films

The influence of substitution of Bi atom instead of S atoms on the structural and optical properties of thin films of As{sub 40}S{sub 60} are reported. The density is found to be increased with the addition Bi heavy metal into As{sub 2}S{sub 3}. The amorphous to polycrystalline structure of the bulk sample is observed for Bi more than 7%. The glass transition temperature is found to be decreased with addition of Bi. The absorption edge shifts to shorter wavelength, thereby decreasing optical band gap of Bi{sub x}As{sub 40}S{sub 60-x} (x=0,2 and 4% here) film. The optical parameter change is discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in place of chalcogenide S atoms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗