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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal

Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. In this study, the epitaxial growth of monocrystalline, covalent Cr 5 Te 8 2D crystals on monolayer vdW WSe 2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr 5 Te 8 , with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe 2 via 3 × 3 (Cr 5 Te 8 )/7 × 7 (WSe 2 ) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed “dative epitaxy”, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr 5 Te 8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

36 MATERIALS SCIENCE↗
NASA NTRS1997

Computer Controlled Magnetotransport Setup for the Characterization of Semiconductor Thin Films

We have considered a computer controlled magnetotransport setup using LabWindows environment. It allows for measurements of resistivity, Hall resistance, carrier concentration and charge mobility in semiconductor thin films using a van der Pauw configuration. The setup features an electromagnet (B = 0.7 Tesla) a 80486-DX 33 computer with a National Instrument AT-MIO 16 AD/DA and a GPIB interface board. A Keithely 224 current source and a Keithley 196 digital voltmeter were also used in the setup. Plans for the addition of capabilities to allow for magnetic field sweeping and the performance of measurements as a function of temperature will be presented.

Ducoudray, G. O.↗
DOE OSTI2023

Orbital correlations in ultrathin films of late transition metals

We develop a two-orbital Hubbard model of electron correlations in ultrathin (111)-oriented fcc films of late transition metals such as Co and Ni. Our model indicates that the Mott-Hund’s interaction results in ferromagnetic nearest-neighbor orbital correlations. Frustration associated with the mismatch between orbital and crystal symmetries prevents orbital ordering, resulting in the orbital liquid state. This state can be manifested in phenomena involving spin-orbit coupling, such as magnetic anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quantifying the topology of magnetic skyrmions in three dimensions

Magnetic skyrmions have so far been treated as two-dimensional spin structures characterized by a topological winding number. However, in real systems with the finite thickness of the device material being larger than the magnetic exchange length, the skyrmion spin texture extends into the third dimension and cannot be assumed as homogeneous. Using soft x-ray laminography, we reconstruct with about 20-nanometer spatial (voxel) size the full three-dimensional spin texture of a skyrmion in an 800-nanometer-diameter and 95-nanometer-thin disk patterned into a 30× [iridium/cobalt/platinum] multilayered film. A quantitative analysis finds that the evolution of the radial profile of the topological skyrmion number is nonuniform across the thickness of the disk. Estimates of the micromagnetic energy densities suggest that the changes in topological profile are related to nonuniform competing energetic interactions. Our results provide a foundation for nanoscale metrology for spintronics devices using topology as a design parameter.

36 MATERIALS SCIENCE↗
DOE OSTI2023

THERMODYNAMIC PROPERTIES OF SRF NIOBIUM

Bulk and thin films of niobium are the materials of choice in fabricating superconducting radio frequency (SRF) cavities for modern particle accelerators and quantum computing applications. The thermodynamic properties of Nb are of particular interest in heat management in cryogenic environments. Here, we report the results of measurements of the thermodynamic properties of niobium used in the fabrication of SRF cavities. The temperature and magnetic field dependence of thermal conductivity, Seebeck coefficient, and specific heat capacity was measured on bulk niobium samples.

Dhakal, Pashupati↗
NASA NTRS1973

Simultaneous observations of auroras from the South Pole Station and of precipitating electrons by Isis 1.

On the basis of the simultaneous observations of auroras from the South Pole and of precipitating electrons by the Isis 1 satellite it is shown that (1) a midday auroral arc (photographed on black and white film) occurs within the cleft (cusp) region projected to the appropriate auroral height along the geomagnetic field; (2) in the evening sector an aurora, observed by Isis 1 and the South Pole all-sky camera, extended for at least 5 hours of local geomagnetic time in the expected position of the auroral oval; and (3) during a period of extreme magnetic quiet, cleftlike electrons were observed just poleward of a narrow region of intense precipitation in the midnight sector. An earth-sun oriented arc was seen at the projected location of the intense electron flux.

Winningham, J. D.↗
NASA NTRS2004

Zeolite Formation and Weathering Processes in Dry Valleys of Antartica: Martian Analogs

Terrestrial weathering processes in cold-desert climates such as the Dry Valleys of Antarctica may provide an excellent analog to chemical weathering and diagenesis of soils on Mars. Detailed studies of soil development and the chemical and mineralogical alterations occurring within soil columns in Wright Valley, Antarctica show incredible complexity in the upper meter of soil. Previous workers noted the ice-free Dry Valleys are the best terrestrial approximations to contemporary Mars. Images returned from the Pathfinder and Spirit landers show similarities to surfaces observed within the Dry Valleys. Similarities to Mars that exist in these valleys are: mean temperatures always below freezing (-20 C), no rainfall, sparse snowfall-rapidly removed by sublimation, desiccating winds, diurnal freeze-thaw cycles (even during daylight hours), low humidity, oxidative environment, relatively high solar radiation and low magnetic fields . The Dry Valley soils contain irregular distributions and low abundances of soil microorganisms that are somewhat unusual on Earth. Physical processes-such as sand abrasion-are dominant mechanisms of rock weathering in Antarctica. However, chemical weathering is also an important process even in such extreme climates. For example, ionic migration occurs even in frozen soils along liquid films on individual soil particles. It has also been shown that water with liquid-like properties is present in soils at temperatures on the order of approx.-80 C and it has been observed that the percentage of oxidized iron increases with increasing soil age and enrichments in oxidized iron occurs toward the surface. The presence of evaporates is evident and appear similar to "evaporite sites" within the Pathfinder and Spirit sites. Evaporites indicate ionic migration and chemical activity even in the permanently frozen zone. The presence of evaporates indicates that chemical weathering of rocks and possibly soils has been active. Authogenic zeolites have been identified within the soil columns because they are fragile; i.e. they are euhedral, unabraded, and unfractured, strongly suggesting in situ formation. Their presence in Antarctic samples is another indication that diagenic processes are active in cold-desert environments. The presence of zeolites, and other clays along with halites, sulfates, carbonates, and hydrates are to be expected within the soil columns on Mars at the Gusev and Isidis Planitia regions. The presence of such water-bearing minerals beneath the surface supplies one of the requirements to support biological activity on Mars.

Gibson, E. K., Jr.↗
DOE OSTI2025

Tuning Kinetic Inductance with Doping in Superconducting Electron Gases at the KTaO 3 (111) Interface

We used coplanar waveguide resonators fabricated from the two-dimensional superconductor formed at KTaO 3 (111) interfaces to characterize the superconductor’s sheet kinetic inductance L K/□ . Upon varying the carrier density, in samples with T c ranging from 0.62 to 1.81 K, we can tune L K/□ between 1.88 and 7.42 nH/□ at the lowest temperatures, exceeding the highest values reported for granular aluminum films. The temperature dependence of L K/□ is consistent with a superconducting gap without nodes. The high L K/□ of superconducting KTaO 3 (111) interfacial electron gases combined with the high dielectric constant of KTaO 3 results in resonators with exceedingly low phase velocities (“slow light”) and small mode volumes. In addition, superconducting KTaO 3 (111) interfacial electron gases are robust in magnetic fields well above a Tesla. In conclusion, these features can enable unique device applications in superconducting electronics and quantum information science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Data storage technology comparisons

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Katti, Romney R.↗
DOE OSTI2021

Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

Abstract Superconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 10 10 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb 3 Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb 3 Sn, it has been proposed to coat Nb cavities with thin film Nb 3 Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb 3 Sn/Al 2 O 3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al 2 O 3 and Nb 3 Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

A pathway to desired functionalities in vertically aligned nanocomposites and related architectures

Epitaxial vertically aligned nanocomposites (VANs) and their related architectures have shown many intriguing features that are not available from conventional two-dimensional planar multilayers and heterostructures. The ability to control constituent, interface, microstructure, strain, and defects based on VANs has enabled the multiple degrees of freedom to manipulate the optical, magnetic, electrochemical, electronic, ionic, and superconducting properties for specific applications. This field has rapidly expanded from the interest in oxide:oxide to oxide:metal, metal:nitride and nitride:nitride systems. To achieve unparalleled properties of the materials, three-dimensional super-nanocomposites based on a hybrid of VAN and multilayer architectures have been recently explored as well. The challenges and opportunities of VAN films are also discussed in this article.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Surface Electronic Structure of Cr Doped Bi 2 Se 3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi 2-x Cr x Se 3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi 2 Se 3 . These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Chemical substitution induced half-metallicity in CrMnSb (1– x ) P x

Half-metallic Heusler alloys have been intensively studied in recent years due to their potential applications in spin-based devices, e.g., in magnetic tunnel junctions. Yet, their properties may be very sensitive to the choice of the substrates, i.e., to the epitaxial strain and interface properties. Here, we report the results of our computational work on the half-Heusler compound CrMnSb (1–x) P x . In particular, we demonstrate that the parent compound CrMnSb is close to a half-metallic material at the optimized lattice parameter, with the onset of the half-metallic bandgap a few meV above the Fermi energy. Moreover, although it undergoes a half-metallic transition under a uniform compression of ~1.5%, such a transition is absent under epitaxial strain. At the same time, we show that a half-metallic transition could be induced by a chemical substitution of Sb with P, which results in a volume reduction of the unit cell. In particular, 50% substitution of Sb with P leads to a robust half-metallicity in CrMnSb (1–x) P x , with 100% spin polarization being retained at a large range of epitaxial strain. Furthermore, our results indicate that CrMnSb0.5P0.5 could be grown on different types of substrates, e.g., GaAs, without its electronic properties being detrimentally affected by biaxial strain. In addition, CrMnSb 0.5 P 0.5 exhibits a fully compensated ferrimagnetic alignment, which could be potentially useful in applications where stray magnetic fields are undesirable.

36 MATERIALS SCIENCE↗
DOE OSTI2024

30 years of semiconductor nanowire research: A Personal Journey

This project is about flux line pinning in high T c superconductors using columnar defects as the pinning centers. The basic idea is that linear structural defects can pin the flux lines within HTSCs so that their critical current density (the maximal current density that these HTSCs can carry with zero resistance) can be enhanced. The question is how to create such linear structural defects within crystalline cuprate thin films. Scientists have already successfully demonstrated the concept by irradiating HTSC crystals with high-energy ions at synchrotron beamline facilities. However, such heavy ion irradiation is practically not viable for large-scale processes. Finally, we reasoned that maybe we could introduce some sort of linear nanoscopic objects into HTSC to form a composite, and then these linear nanoscopic objects would serve as the magnetic flux line pinning centers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Surface Impedance of Nb$_3$Sn and YBa$_2$Cu$_3$O$_{7-\sigma}$ in High Magnetic Fields

New potential rf applications of superconductors emerged with the need to operate in high dc magnetic fields (up to 16 T) where vortex motion dictates the response: the beam screen coating of the Future Circular Collider (FCC) [1] and haloscopes, i.e. rf cavities for the axions detection [2]. However, very few data are available in the required regimes. We present in this work measurements of the surface impedance Z up to 12 T on bulk Nb₃Sn and YBCO thin films grown by different techniques. The measurements are performed with a dielectric loaded resonator operating at 15 GHz. We obtained the vortex motion resistivity and extracted the high frequency vortex motion parameters [3]: the depinning frequency, the flux-flow resistivity and the pinning constant, as well as their temperature and field dependences. Substantial differences are highlighted in the high frequency pinning properties of the studied materials, providing useful information on possible improvements in view of applications. A comparison with the results obtained in the microwave frequency range at lower fields (up to 1 T) is given.

43 PARTICLE ACCELERATORS↗