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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Combined first and second order Fermi acceleration at comets

Two-dimensional, time-dependent model calculations indicate that an interplay between velocity and spatial diffusion may be responsible for the acceleration of implanted heavy ions in the cometary preshock region. Velocity diffusion (second order Fermi acceleration) accelerates the pickup ions to moderate energies thus creating a seed population for the more efficient diffusive-compressive shock acceleration. Solar wind convection limits the time available for diffusive-compressive acceleration, therefore the resulting energy spectrum above 100 keV is a power law with a spectral index of 5 - 6, a value which is in reasonably good agreement with observations.

Gombosi, T. I.↗
NASA NTRS1989

Combined first- and second-order Fermi acceleration in cometary environments

Two-dimensional (one velocity space and one spatial dimension), time-dependent model calculations indicate that an interplay between velocity and spatial diffusion may be responsible for the acceleration of implanted heavy ions in the cometary preshock region. Velocity diffusion (second-order Fermi acceleration) accelerates the pickup ions to moderate energies, thus creating a seed population for the more efficient diffusive-compressive shock acceleration. Solar wind convection limits the time available for diffusive-compressive acceleration. Therefore, the resulting energy spectrum above the pickup energy is a combination of an exponential decrease at lower energies (up to about 100 keV) and a power law spectrum at higher energies. The calculated energy spectra constitute a surprisingly good fit to the published Vega and Giotto energy spectra above the pickup energy.

Gombosi, T. I.↗
NASA NTRS1996

Self-Lubricating, Wear-Resistant Diamond Films Developed for Use in Vacuum Environment

Diamond's outstanding properties--extreme hardness, chemical and thermal inertness, and high strength and rigidity--make it an ideal material for many tribological applications, such as the bearings, valves, and engine parts in the harsh environment found in internal-combustion engines, jet engines, and space propulsion systems. It has been demonstrated that chemical-vapor-deposited diamond films have low coefficients of friction (on the order of 0.01) and low wear rates (less than 10(sup -7) mm (sup 3/N-m)) both in humid air and dry nitrogen but that they have both high coefficients of friction (greater than 0.4) and high wear rates (on the order of 1(sup -4) mm sup 3/N-m)) in vacuum. It is clear that surface modifications that provide acceptable levels of friction and wear properties will be necessary before diamond films can be used for tribological applications in a space-like, vacuum environment. Previously, it was found that coatings of amorphous, non-diamond carbon can provide low friction in vacuum. Therefore, to reduce the friction and wear of diamond film in vacuum, carbon ions were implanted in an attempt to form a surface layer of amorphous carbon phases on the diamond films.

Source record↗
DOE OSTI2012

Nuclear resonance scattering of synchrotron radiation as a unique electronic, structural and thermodynamic probe

Discovery of Moessbauer effect in a nuclear transition was a remarkable development. It revealed how long-lived nuclear states with relatively low energies in the kiloelectron volt (keV) region can be excited without recoil. This new effect had a unique feature involving a coupling between nuclear physics and solid-state physics, both in terms of physics and sociology. Physics coupling originates from the fact that recoilless emission and absorption or resonance is only possible if the requirement that nuclei have to be bound in a lattice with quantized vibrational states is fulfilled, and that the finite electron density on the nucleus couples to nuclear degrees of freedom leading to hyperfine interactions. thus, Moessbauer spectroscopy allows peering into solid-state effects using unique nuclear transitions. Sociological aspects of this coupling had been equally startling and fruitful. The interaction between diverse scientific communities, who learned to use Moessbauer spectroscopy proved to be very valuable. For example, biologists, geologists, chemists, physics, materials scientists, and archeologists, all sharing a common spectroscopic technique, also learned to appreciate the beauty and intricacies of each other's fields. As a laboratory-based technique, Moessbauer spectroscopy matured by the end of the 1970s. Further exciting developments took place when accelerator-based techniques were employed, like synchrotron radiation or 'in-beam'Moessbauer experiments with implanted radioactive ions. More recently, two Moessbauer spectrometers on the surface of the Mars kept the technique vibrant and viable up until present time. In this chapter, the authors look into some of the unique aspects of nuclear resonance excited with synchrotron radiation as a probe of condensed matter, including magnetism, valence, vibrations, and lattice dynamics, and review the development of nuclear resonance inelastic x-ray scattering (NRIXS) and synchrotron Moessbauer spectroscopy (SMS). However, to place these two techniques into some perspective with respect to other methods that yield related information, they display their version of a frequently used map of momentum and energy transfer diagram in figure 17.1. Here, various probes like electrons, neutrons, or light, i.e., Brillouin or Raman, and relatively newer forms of X-ray scattering are placed according to their range of energy and momentum transfer taking place during the measurements. Accordingly, NRIXS is a method that needs to be considered as a complementary probe to inelastic neutron and X-ray scattering, while SMS occupies a unique space due to its sensitivity to magnetism, structural deformations, valence, and spin states.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Effects of Io ejecta on Europa

The effects of plasma ejected from Io on the nature and evolution of the surface of Europa and on the relative importance of the roles played by the two satellites in the Jupiter magnetosphere are examined. Observations of an ultraviolet absorption feature on the trailing side of Europa are interpreted as due to an equilibrium column density of SO2 in a steady-state model of the implantation of iogenic ions into the surface of Europa and their subsequent sputtering. The observed sulfur column density of 2 x 10 to the 16th/sq cm implies a slow loss of material from Europa, mainly water ice, and indicates that the spectrum of particles sputtered is soft. Considerations of the comparative roles of corotating and energetic heavy ions are shown to suggest that the implantation and sputtering is primarily the result of the proton and light ion component of the plasma. The weakness of Europa as a plasma source resulting from the soft sputtered particle spectrum thus leads to the dominance of Io in contributing to the magnetospheric plasma.

Eviatar, A.↗
DOE OSTI2016

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

It is shown that 9-μm-thick semi-insulating surface layers can be formed in moderately doped n-type silicon carbide (donor concentration 2 × 10{sup 16} cm{sup –3}) via the comparatively low-dose (7 × 10{sup 11} cm{sup –2}) implantation of high-energy (53 MeV) argon ions. The free-carrier removal rate is estimated at ~10{sup 4} cm{sup –1}. The resistivity of the semi-insulator is no less than 7 × 10{sup 12} Ω cm. Analysis of the monopolar current of electron injection into the semi-insulator shows that the impurity-conductivity compensation is due to radiation induced defects pinning the equilibrium Fermi level at a depth of 1.16 eV below the conduction-band bottom. The density of defect states at the Fermi level is 2.7 × 10{sup 16} cm{sup 2} eV{sup –1}.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd{sub x}Hg{sub 1–x}Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n{sup +}–p- and n{sup +}–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p{sup +}–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Surface-polarity-dependent ferromagnetism in arsenic-implanted ZnO films prepared by MBE

O-polar and Zn-polar ZnO films were prepared by rf-plasma assisted molecular beam epitaxy (MBE) on sapphire substrates. Arsenic ions have been implanted into high quality ZnO with a definite polarity. Substantial temperature-independent ferromagnetism has been observed for both films, with the O-polar film having approximately twice the magnetization as the Zn-polar film. The saturation magnetization is shown to be due to the defects introduced during implantation, rather than to local moments associated with the As ion. Rutherford Backscattering/Channeling and optical absorption measurements confirm that the implantation introduces more defect states in the O-polar films, while X-ray absorption near-edge structure measurements show that the environment of the arsenic ions was similar for both polarities. (C) 2014 Elsevier B.V. All rights reserved.

Doped ZnO↗
NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron-bombardment ion-thruster was used as a neutralized-ion-beam sputtering source to texture the surfaces of biological implant materials. The materials investigated included 316 stainless steel; titanium-6% aluminum, 4% vanadium; cobalt-20% chromium, 15% tungsten; cobalt-35% nickel, 20% chromium, 10% molybdenum; polytetrafluoroethylene; polyoxymethylene; silicone and polyurethane copolymer; 32%-carbon-impregnated polyolefin; segmented polyurethane; silicone rubber; and alumina. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion-texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion-textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion-textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane have been obtained.

Weigand, A. J.↗
DOE OSTI2015

Silicon Quantum Dots with Counted Antimony Donor Implants

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

Singh, Meenakshi↗
DOE OSTI2016

Spectroscopic analysis of the NIR emission in Tm implanted Al{sub x}Ga{sub 1-x}N layers

Al{sub x}Ga{sub 1-x}N samples, with different AlN molar fractions, x = 0, 0.15, 0.77, and 1, grown by halide vapor phase epitaxy were implanted with Tm ions. Photoluminescence (PL) measurements revealed that after thermal annealing all the samples exhibit intraionic Tm{sup 3+} luminescence. In samples with x > 0, the low temperature emission is dominated by the lines that appear in the near infrared (NIR) spectral region, corresponding to the overlapped {sup 1}G{sub 4} → {sup 3}H{sub 5} and {sup 3}H{sub 4} → {sup 3}H{sub 6} multiplet transitions. A detailed spectroscopic analysis of NIR emission of the thulium implanted and annealed Al{sub x}Ga{sub 1-x}N layers is presented by using temperature dependent steady-state PL, room temperature PL excitation, and time resolved PL. The results indicate that the excitonic features sensitive to the alloy disorder are involved in the excitation population processes of the Tm{sup 3+} luminescence and the highest thermal stability for the NIR emission occurs for the AlN:Tm sample.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness L{sub eff} and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Radiation induced hardening of beryllium during low temperature He implantation

The effect of ion irradiation on evolution of microstructure and hardening of beryllium with different impurity levels was investigated using TEM and nanoindentation. High purity S-65 grade and less-pure S-200-F grade were implanted by helium ions at temperatures of 50°C and 200°C. 11 different energies were used, so as to create a quasi-homogeneous 3 µm irradiated layer with average radiation damage of 0.1 dpa and average He content of 2000 appm.Nanoindentation experiments demonstrated that before irradiation, the S-200-F and S-65 grades have an average hardness of 3.7$\pm$0.8 GPa and 3.4$\pm$0.8 GPa correspondently. After implantation the hardness of both grades increased by about 60% for the 200°C irradiation and 100% for the 50°C irradiation. The crystallographic analysis of indented grains demonstrated that in the as-received materials the hardness is about 2.5 times higher when the indentation direction is close to the [0001] c-axis of beryllium compared to indentation perpendicular to [0001]. Hardness anisotropy significantly decreased after irradiation: the “soft orientation” was most sensitive to irradiation-induced hardening, with hardness increasing by about 140% after irradiation at 50°C and 100% after irradiation at 200°C, compared to about 15 - 20% for the “hard” orientation at both irradiation temperatures. The higher purity grade had smaller increase of the “soft orientation” hardness: 2.5$\pm$0.3 GPa for the S-65 and 2.9$\pm$0.2 GPa for the S-200-F.At both temperatures in both grades, under TEM investigation the radiation damage appears as “black dots” which are likely to be small dislocation loops with the number density of ~ 10 22 m -3 . No bubbles were observed by TEM inside grains and at grain boundaries. Analysis of the possible hardening contribution demonstrated that the observed “black dots” could be responsible for up to half of the measured hardening, while the rest of the hardening should originate from helium bubbles with the size below the TEM resolution (at or below 1.5 nm).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Machine Learning for Predictive Performance Analysis in Charged Particle Beam Tools

Imaging methods driven by probes, electrons, and ions have played a dominant role in modern science and engineering. Opportunities for machine vision and AI that focus on consumer problems like driving and feature recognition, are now presenting themselves for automating aspects of the scientific processes. This proposal aims to enable and drive discovery in ultra-low energy implantation by taking advantage of faster processing, flexible control and detection methods, and architecture-agnostic workflows that will result in higher efficiency and shorter scientific development cycles. Custom microscope control, collection and analysis hardware will provide a framework for conducting novel in situ experiments revealing unprecedented insight into surface dynamics at the nanoscale. Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision. Here we demonstrate 1 keV focused ion beam Au implantation into Si and validate the results via atom probe tomography. We show the Au implant depth at 1 keV is 0.8 nm and that identical results for low energy ion implants can be achieved by either lowering the column voltage, or decelerating ions using bias – while maintaining a sub-micron beam focus. We compare our experimental results to static calculations using SRIM and dynamic calculations using binary collision approximation codes TRIDYN and IMSIL. A large discrepancy between the static and dynamic simulation is found that is due to lattice enrichment with high stopping power Au and surface sputtering. Additionally, we demonstrate how model details are particularly important to the simulation of these low-energy heavy-ion implantations. Finally, we discuss how our results pave a way to much lower implantation energies, while maintaining high spatial resolution.

47 OTHER INSTRUMENTATION↗