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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Quantum material topology via defect engineering

Current approaches of discovering new topological quantum materials, such as (magnetic) Weyl materials, by screening material databases or by rational design suffer from experimental challenges in growing the material in the desired geometry, hampering their potential applications. We take an approach of defect-engineering a topology starting from systems with experimentally well-controlled growth . Using SnTe, an experimentally viable topological crystalline insulator, as our model system, we elucidate the different effects of breaking time-reversal, inversion, and mirror symmetries using magnetic dopant defects, to controllably induce a topological phase transition. To this effect, we compute the thermodynamics, magnetism, and band-structure topology of magnetically doped SnTe using a full ab initio approach. In this process, we have discovered that Cr-doped SnTe is a Weyl semimetal. We have computed its classic Fermi-arc experimental signature on the (001) surface and also showed that it has a large anamolous Hall conductivity (AHC) of ~ 250 Ω - 1 cm - 1 . We predict a large Curie temperature ( T c ) of 62 K even at 3.3 % doping, with both T c and AHC being tunable with Cr concentration, suggesting potential for room-temperature applications. Our study in general paves the way for defect-designing room-temperature topological quantum phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Theoretical investigations on Kerr and Faraday rotations in topological multi-Weyl Semimetals

Motivated by the recent proposal of giant Kerr rotation in WSMs, we investigate the Kerr and Faraday rotations in time-reversal broken multi-Weyl semimetals (mWSMs) in the absence of an external magnetic field. Using the framework of Kubo response theory, we find that both the longitudinal and transverse components of the optical conductivity in mWSMs are modified by the topological charge ( n n ). Engendered by the optical Hall conductivity, we show in the thin film limit that, while the giant Kerr rotation and corresponding ellipticity are independent of n n , the Faraday rotation and its ellipticity angle scale as n n and n^2 n 2 , respectively. In contrast, the polarization rotation in semi-infinite mWSMs is dominated by the axion field showing n n dependence. In particular, the magnitude of Kerr (Faraday) angle decreases (increases) with increasing n n in Faraday geometry, whereas in Voigt geometry, it depicts different n n -dependencies in different frequency regimes. The obtained results on the behavior of polarization rotations in mWSMs could be used in experiments as a probe to distinguish single, double, and triple WSMs, as well as discriminate the surfaces of mWSMs with and without hosting Fermi arcs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Superconductivity and a van Hove singularity confined to the surface of a topological semimetal

The interplay between topology and superconductivity generated great interest in condensed matter physics. Here, we unveil an unconventional two-dimensional superconducting state in the Dirac nodal line semimetal ZrAs 2 which is exclusively confined to the top and bottom surfaces within the crystal's ab plane. As a remarkable consequence, we present the first clear evidence of a Berezinskii-Kosterlitz-Thouless (BKT) transition occurring solely on a material's surface-specifically, ZrAs 2 -unlike the inconsistent reports on PtBi 2 , CaAgP, and CaAg 1-x Pd x P. Furthermore, we find that these same surfaces also host a two-dimensional van Hove singularity near the Fermi energy. This leads to enhanced electronic correlations that contribute to the stabilization of superconductivity at the surface of ZrAs 2 . The'surface-confined nature of the van Hove singularity and associated superconductivity, realized for the first time, allows exploring the interplay between low-dimensional quantum topology and superconductivity in a bulk material without resorting to the superconducting proximity effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab initio approach

Properties of bare and nitrogen-covered Al-terminated AlN(0001) surface were determined using density functional theory (DFT) calculations. At a low nitrogen coverage, the Fermi level is pinned by Al broken bond states located below conduction band minimum. Adsorption of nitrogen is dissociative with an energy gain of 6.05 eV/molecule at a H3 site creating an overlap with states of three neighboring Al surface atoms. During this adsorption, electrons are transferred from Al broken bond to topmost N adatom states. Accompanying charge transfer depends on the Fermi level. In accordance with electron counting rule (ECR), the DFT results confirm the Fermi level is not pinned at the critical value of nitrogen coverage θ{sub N}(1) = 1/4 monolayer (ML), but it is shifted from an Al-broken bond state to Np{sub z} state. The equilibrium thermodynamic potential of nitrogen in vapor depends drastically on the Fermi level pinning being shifted by about 4 eV for an ECR state at 1/4 ML coverage. For coverage above 1/4 ML, adsorption is molecular with an energy gain of 1.5 eV at a skewed on-top position above an Al surface atom. Electronic states of the admolecule are occupied as in the free molecule, no electron transfer occurs and adsorption of a N{sub 2} molecule does not depend on the Fermi level. The equilibrium pressure of molecular nitrogen above an AlN(0001) surface depends critically on the Fermi level position, being very low and very high for low and high coverage, respectively. From this fact, one can conclude that at typical growth conditions, the Fermi level is not pinned, and the adsorption and incorporation of impurities depend on the position of Fermi level in the bulk.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Observation of Fermi arc and its connection with bulk states in the candidate type-II Weyl semimetal WTe2

A kind of topological material, the type-II Weyl semimetal, was proposed recently where the Weyl points emerge at the contact points of the electron and hole pockets, resulting in a highly tilted Weyl cone. In type-II Weyl semimetals, the Lorentz invariance is violated and a different type of Weyl fermion is generated that leads to intriguing physical properties. WTe 2 is interesting because it is predicted to be a good candidate for realizing type-II Weyl semimetals. By utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we have revealed a full picture of the electronic structure of WTe 2 . A clear surface state has been identified and its connection with the bulk electronic states in the momentum and energy space shows good agreement with band structure calculations. Our results provide electronic signatures that are consistent with type-II Weyl states in WTe 2 . They lay a foundation for further investigations on the topological nature of WTe 2 and the exploration of unique phenomena and physical properties in type-II Weyl semimetals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Prediction of double-Weyl points in the iron-based superconductor CaKFe 4 As 4

Employing a combination of symmetry analysis, low-energy modeling, and ab initio simulations, we predict the presence of magnetic-field-induced Weyl points close to the Fermi level in CaKFe 4 As 4 . Depending on the relative strengths of the magnetic field and of the spin-orbit coupling, the Weyl fermions can carry a topological charge of ±1 or ±2, making CaKFe 4 As 4 a rare realization of a double-Weyl semimetal. Here, we further predict experimental manifestations of these Weyl points, both in bulk properties, such as the anomalous Hall effect, and in surface properties, such as the emergence of prominent Fermi arcs. Because CaKFe 4 As 4 displays unconventional fully gapped superconductivity below 30 K, our findings open a route to investigate the interplay between superconductivity and Weyl fermions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Antiferromagnetic topological insulating state in $\mathrm{Tb_{0.02}Bi_{1.08}Sb_{0.9}Te_2S}$ single crystals

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed in magnetic-topological-insulator-based devices. Here in this work, we report a successful doping of rare earth element Tb into Bi 1.08 Sb 0.9 Te 2 S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ~10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ~150 K. At low temperatures, strong Shubnikov–de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi 1.08 Sb 0.9 Te 2 S single crystal provides an ideal platform for quantum transport studies and potential applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness

We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8 nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Global anomalies of Green's function zeros.

We study global anomalies of nonlocal effective theories proposed to describe symmetry-preserving Luttinger surfaces, i.e., the momentum-space manifolds of Green’s function zeros (GFZs) at zero energy, in strongly interacting fermionic systems. In particular, we focus on the simplest possible cases associated with a gapless Dirac zero, which is the counterpart of the gapless Dirac quasiparticle in weakly interacting systems. These theories may be derived by integrating out low-energy degrees of freedom that do not couple to the relevant gauge field. We discuss the global anomaly, the bulk-boundary correspondence, and the constraint on phases consistent with the anomaly, such as non-Fermi liquids and emergent gapless quasiparticles on Luttinger surfaces. Failing to avoid spontaneous symmetry breaking in the thermodynamical limit inevitably leads to unstable GFZs. We also provide some perspective on why the related nonlocal fermionic effective theory studied recently is not a suitable starting point for a symmetrically gapped phase

Su, Lei↗
DOE OSTI2014

Andreev-Majorana bound states in superfluids

We consider Andreev-Majorana (AM) bound states with zero energy on surfaces, interfaces, and vortices in different phases of the p-wave superfluids. We discuss the chiral superfluid {sup 3}He-A and time reversal invariant phases: superfluid {sup 3}He-B, planar and polar phases. The AM zero modes are determined by topology in the bulk and disappear at the quantum phase transition from the topological to nontopological state of the superfluid. The topology demonstrates the interplay of dimensions. In particular, the zero-dimensional Weyl points in chiral superfluids (the Berry phase monopoles in momentum space) give rise to the one-dimensional Fermi arc of AM bound states on the surface and to the one-dimensional flat band of AM modes in the vortex core. The one-dimensional nodal line in the polar phase produces a two-dimensional flat band of AM modes on the surface. The interplay of dimensions also connects the AM states in superfluids with different dimensions. For example, the topological properties of the spectrum of bound states in three-dimensional {sup 3}He-B are connected to the properties of the spectrum in the two-dimensional planar phase (thin film)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

An ab initio study of the adsorption of Eu 3+ , Pu 3+ , Am 3+ , and Cm 3+ hydroxide complexes on hematite (001) surface: Role of magnetism on adsorption

Inner-sphere hydroxide complexes of Eu 3+ , Pu 3+ , Am 3+ , and Cm 3+ adsorbed to antiferromagnetic and ferromagnetic hematite (001) surfaces were modeled by using DFT (GGA+U) calculations in order to compare the electronic properties, atomic structures, and adsorption energies between the trivalent actinide analog Eu 3+ and the corresponding actinides An 3+ . Eu 3+ forms a tridentate–binuclear surface complex on the hematite surface with an Eu–Fe distance of 3.4–3.8 Å. Eu 3+ is partially reduced upon adsorption, as indicated by the increase of original Eu 3+ spin value from 6 to ~7. Eu 3+ adsorption on the ferromagnetic surface is energetically more favorable than on the antiferromagnetic surface, while the opposite is the case for all actinides An 3+ . When retaining a similar adsorption configuration (e.g., coordination number = 6), An 3+ cations are adsorbed ~0.2 Å closer to the surface compared to Eu 3+ . Partial density of states analyses indicate ionic bonding between O ions on the hematite surface and the Eu 3+ /An 3+ adsorbates. An increasing number of bands above the Fermi energy were found when Eu 3+ and An 3+ were adsorbed to the ferromagnetic surface but not on the antiferromagnetic surface, indicating the ferromagnetic substrate becomes more semiconducting upon cation adsorption. Here, these results show that the spin configurations of the hematite (001) surface have a weak but distinct influence on the cation adsorption energy. Although the antiferromagnetic spin configuration of hematite is dominant in nature, metastable ferromagnetic domains on nanohematite grains may influence the energetics of certain cation adsorption reactions.

42 ENGINEERING↗
DOE OSTI2018

Anomalous Heat and Momentum Transport Arising from Surface Roughness in a Normal {sup 3}He Slab

I discuss heat and momentum transport in a mesoscopic film of {sup 3}He, confined by rough walls in the normal Fermi liquid state. Inelastic binary quasiparticle scattering mediated by elastic scattering from the surface roughness gives rise to a coherent “mixed” scattering channel that drives anomalous transport over a range of temperature. I calculate the thermal conductivity and viscosity of the film in this regime and derive these in terms of the film thickness and autocorrelation function of the surface roughness, which enters the formulation as an independent input. This calculation can be useful in understanding and isolating the effects of confinement and surface roughness, especially in the context of exploring the superfluid state in the film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Two charged states of hydrogen on the SrTiO{sub 3}(001) surface

The effects of hydrogen exposure on the electronic structure of two types of SrTiO{sub 3}(001) surfaces, oxygen-deficient (OD) and nearly-vacancy-free (NVF) surfaces, were investigated with ultraviolet photoemission spectroscopy and nuclear reaction analysis. Upon molecular hydrogen exposure to the OD surface which reveals in-gap states at 1.3 eV below the Fermi level, the in-gap state intensity was reduced to half the initial value at a hydrogen coverage of 0.9 ± 0.7 × 10{sup 14} cm{sup −2}. On the NVF surface which has no in-gap state, on the other hand, atomic-hydrogen exposure induced in-gap states, and the hydrogen saturation coverage was evaluated to be 3.1 ± 0.8 × 10{sup 14} cm{sup −2}. We argue that H is positively charged as H{sup ∼0.3+} on the NVF surface by being coordinated to the O atom, whereas H is negatively charged as H{sup −} on the OD surface by occupying the oxygen vacancy site. The stability of H{sup −} at the oxygen vacancy site is discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A new insight into neutrino energy loss by electron capture of iron group nuclei in magnetar surfaces

Based on the relativistic mean-field effective interactions theory, and the Lai dong model, we discuss the influences of superstrong magnetic fields (SMFs) on electron Fermi energy, nuclear blinding energy, and single-particle level structure in magnetar surfaces. Using the Shell-Model Monte Carlo method and the Random Phase Approximation theory, we analyze the neutrino energy loss rates (NELRs) by electron capture for iron group nuclei in SMFs. First, when B {sub 12} < 100, we find that the SMFs have a slight influence on the NELRs for most nuclides at relativistic low temperatures (e.g., T {sub 9} = 0.233); nevertheless, the NELRs increase by more than four orders of magnitude at relativistic high temperatures (e.g., T {sub 9} = 15.53). When B {sub 12} > 100, the NELRs decrease by more than three orders of magnitude (e.g., at T {sub 9} = 15.53 for {sup 52–61}Fe, {sup 55–60}Co, and {sup 56–63}Ni). Second, for a certain value of magnetic field and temperature, the NELRs increase by more than four orders of magnitude when ρ{sub 7}⩽10{sup 3}, but as the density increases (i.e., when ρ{sub 7}>10{sup 3}), there is almost no influence on the density of NELRs. For the density around ρ{sub 7}=10{sup 2}, there is an abrupt increase in NELRs when B {sub 12} ≥ 10{sup 3.5}. Such jumps are an indication that the underlying shell structure has changed due to single-particle behavior by SMFs. Finally, we compare our NELRs with those of Fuller et al. (FFN) and Nabi and Klapdor-Kleingrothaus (NKK). For the case without SMFs, one finds that our rates for certain nuclei are close to about five orders of magnitude lower than FFN and NKK at relativistic low temperatures (e.g., T {sub 9} = 1). However, at a relativistic high temperature (e.g., T {sub 9} = 3), our results are in good agreement with NKK, but about one order of magnitude lower than FFN. For the case with SMFs, our NELRs for some iron group nuclei can be about five orders of magnitude higher than those of FFN and NKK. (Note that B {sub 12}, T {sub 9}, and ρ {sub 7} are in units of 10{sup 12} G, 10{sup 9} K, and 10{sup 7} g cm{sup −3}, respectively.)

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

Optoelectronically probing the density of nanowire surface trap states to the single state limit

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Emerging edge states on the surface of the epitaxial semimetal CuMnAs thin film

Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here, we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step edge reconstruction can be attributed to an As deficiency that results in changes in the density of states of the remaining As atoms at the step edge. Furthermore, this understanding of the surface structure and step edges on the CuMnAs thin film will enable in-depth studies of its topological properties and magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Pressure effect on band inversion in AE Cd 2 As 2 ( AE =Ca, Sr, Ba)

Recent studies have predicted that magnetic EuCd 2 As 2 can host several different topological states depending on its magnetic order, including a single pair of Weyl points. Here we report on the bulk properties and band inversion induced by pressure in the nonmagnetic analogs AECd 2 As 2 (AE = Ca, Sr, Ba) as studied with density functional theory calculations. Under ambient pressure we find that these compounds are narrow band gap semiconductors, in agreement with experiment. In this work, the size of the band gap is dictated by both the increasing ionicity across the AE series which tends to increase the band gap, as well as the larger nearest neighbor Cd-As distance from increasing atomic size which can decrease the band gap because the conduction band edge is an antibonding state derived mostly from Cd 5s orbitals. The combination of these two competing effects results in a nonmonotonic change of the band gap size across the AE series with SrCd 2 As 2 having the smallest band gap among the three compounds. The application of negative pressure reduces this band gap and causes the band inversion between the Cd 5s and As 4p orbitals along the Γ-A direction to induce a pair of Dirac points. The topological nature of the Dirac points is then confirmed by finding the closed Fermi arcs on the ($10\bar{1}0$) surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗