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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Modeling and sensitivity analysis of mass transfer in active multilayer polymeric film for food applications

The barrier performance of multilayer polymeric films for food applications has been significantly improved by incorporating oxygen scavenging materials. The scavenging activity depends on parameters such as diffusion coefficient, solubility, concentration of scavenger loaded and the number of available reactive sites. These parameters influence the barrier performance of the film in different ways. Virtualization of the process is useful to characterize, design and optimize the barrier performance based on physical configuration of the films. Also, the knowledge of values of parameters is important to predict the performances. Inverse modeling and sensitivity analysis are sole way to find reasonable values of poorly defined, unmeasured parameters and to analyze the most influencing parameters. Thus, the objective of this work was to develop a model to predict barrier properties of multilayer film incorporated with reactive layers and to analyze and characterize their performances. Polymeric film based on three layers of Polyethylene terephthalate (PET), with a core reactive layer, at different thickness configurations was considered in the model. A one dimensional diffusion equation with reaction was solved numerically to predict the concentration of oxygen diffused into the polymer taking into account the reactive ability of the core layer. The model was solved using commercial software for different film layer configurations and sensitivity analysis based on inverse modeling was carried out to understand the effect of physical parameters. The results have shown that the use of sensitivity analysis can provide physical understanding of the parameters which highly affect the gas permeation into the film. Solubility and the number of available reactive sites were the factors mainly influencing the barrier performance of three layered polymeric film. Multilayer films slightly modified the steady transport properties in comparison to net PET, giving a small reduction in the permeability and oxygen transfer rate values. Scavenging capacity of the multilayer film increased linearly with the increase of the reactive layer thickness and the oxygen absorption reaction at short times decreased proportionally with the thickness of the external PET layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO{sub 3} in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V{sub 2}O{sub 5} and V{sub 4}O{sub 7}. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10{sup −3} lin.{sup −2}m{sup −4} and 1.7263 × 10{sup 14} lin.m{sup −2}. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of fabrication conditions on phase formation and properties of epitaxial (PbMg{sub 1/3}Nb{sub 2/3}O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} thin films on (001) SrTiO{sub 3}

The pulsed laser deposition process of 300 nm thick films of Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}){sub 0.67}-(PbTiO{sub 3}){sub 0.33} on (001)-oriented SrTiO{sub 3} was studied by varying deposition pressure, substrate deposition temperature, laser fluence on the target and target-substrate distance. Perovskite phase pure, (001)-oriented, epitaxial smooth films were obtained in a narrow range of deposition parameters. The ferroelectric and dielectric properties of films fabricated within this parameter range still vary significantly. This shows the sensitivity of the system for growth conditions. The best film has a polarization value close to that expected for a (001) poled, stress free single crystal film. All films show deposition conditions dependent variations in the self-bias field. The self-bias is very stable during long cycling for films made at optimum deposition conditions. The piezoelectric coefficients of the films are strongly reduced with respect to bulk single crystal values due to the film clamping. The properties variations are ascribed to changes in the grain boundary properties in which film defects are expected to accumulate. Notably slight off-stoichiometry may cause localized screening charges, affecting specifically the polarization and dielectric constant.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Characteristics of TiO{sub 2}/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

In this study, titanium dioxide (TiO{sub 2}) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO{sub 2}/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO{sub 2}/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

The role of magnetic anisotropy in the magnetoresistance of Cr 2 O 3 /Al 2 O 3 thin film antiferromagnets

The magnetic states of antiferromagnetic insulating thin films are a promising medium for information storage, but characterization of these states has proven to be challenging. One approach is via magnetotransport measurements in an adjacent heavy metal layer. To this end, we synthesized and characterized a series of Cr 2 O 3 films and bilayers on Al 2 O 3 substrates with three different orientations: m-plane, a-plane, and c-plane. X-ray diffraction results demonstrated orientation control of the Cr 2 O 3 thin film, with m-plane films displaying a higher degree of mosaic spread than the a- and c-plane films. Reciprocal space maps showed that the films are mostly relaxed, although there was a small and different degree of strain in each orientation. The m-plane films were under 2% compressive strain, the a-plane film was under 0.5% compressive strain, and the c-plane film was completely relaxed to bulk values. To probe the magnetic state of the films, we measured the angular dependent magnetoresistance of Cr 2 O 3 /Pt bilayers for each orientation. We found a nontrivial temperature dependence of the sign of the magnetoresistance, pointing to the complex interplay between the exchange and anisotropy energies that vary with orientation. We propose that strain and mosaic spread may contribute to a difference in magnetic anisotropies among the samples and the resulting temperature dependence of the magnetoresistance. This work demonstrates the importance of considering the competition between antiferromagnetic exchange and magnetic anisotropy when storing information in the spin state of an antiferromagnetic insulator.

42 ENGINEERING↗
DOE OSTI2021

Microstructural and Superconducting Radiofrequency Properties of Multilayer Sequentially Sputtered Nb 3 Sn films

Nb 3 Sn is considered as a potential candidate for superconducting radiofrequency cavities for particle acceleration due to its higher transition temperature of 18.3 K and higher superheating field of 400 mT. Nb 3 Sn films can be grown inside the surface of a Nb cavity by sequentially sputtering multiple layers of Nb and Sn thin films followed by annealing at 950 °C for 3 h. We report on the properties of Nb 3 Sn films grown on Nb substrates by magnetron sputtering. The films’ crystal structure, surface morphology, and composition were characterized by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The films had a polycrystalline Nb 3 Sn structure with a fine-grain surface and an atomic Sn composition of ~23%. The RF surface resistance of the films was measured for different temperatures at 7.4 GHz to understand the feasibility of this method for the SRF application. The RF surface resistance of the films was 5 mΩ at 12 K, which is about 2 orders of magnitude higher than 60 μΩ previously measured in Nb 3 Sn films grown by Sn vapor diffusion. Finally, the sputtered film had a superconducting transition at 17.2 K, which is also lower than 17.9 K observed in Nb 3 Sn film prepared by vapor diffusion.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Properties of Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) thin films grown on SrRuO(3) buffered nickel and silicon substrates by chemical solution deposition

Ferroelectric film-on-foil capacitors are suitable to replace discrete passive components in the quest to develop electronic devices that show superior performance and are smaller in size. The film-on-foil approach is the most practical method to fabricate such components. Films of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) were deposited on SrRuO{sub 3} (SRO) buffer films over nickel and silicon substrates. High-quality polycrystalline SRO thin-film electrodes were first deposited by chemical solution deposition. A phase pure, dense, uniform microstructure with grain size <100 nm was obtained in films crystallized at 700 C. The room-temperature resistivity of the SRO films crystallized at 700 C was {approx}800-900 {mu}{Omega}-cm. The dielectric properties of sol-gel derived PLZT capacitors on SRO-buffered nickel were evaluated as a function of temperature, bias field, and frequency, and the results were compared to those of the same films on silicon substrates. The comparison demonstrated the integrity of the buffer layer and its compatibility with nickel substrates. Device-quality dielectric properties were measured on PLZT films deposited on SRO-buffered nickel foils and found to be superior to those for PLZT on SRO-buffered silicon and expensive platinized silicon. These results suggest that SRO films can act as an effective barrier layer on nickel substrates suitable for embedded capacitor applications.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering

The authors have examined ultrathin (≤10 Å) tantalum nitride (TaN{sub x}) thin films deposited by atomic layer deposition (ALD) on three surfaces relevant to interconnect layers in microelectronic devices: thermally grown SiO{sub 2}; a Cu thin film grown by physical vapor deposition, and a carbon-doped SiO{sub 2} porous low-κ thin film. The authors have employed ex situ angle-resolved x-ray photoelectron spectroscopy (ARXPS), low-energy ion scattering spectroscopy (LEISS), and atomic force microscopy (AFM) to determine the continuity of these thin films, and by implication, the abruptness of the thin film/substrate interface. On SiO{sub 2} and low-κ, the authors find similar results: both ARXPS and AFM indicate that smooth, uniform thin films are deposited, consistent with nearly layer-by-layer growth of TaN{sub x} on these surfaces. Examination of these films using LEISS reveals that while the 10 Å TaN{sub x} thin films are continuous, the 5 Å TaN{sub x} thin films are not continuous and may possess on the order of ∼10% exposed substrate in the form of small subnanometer inclusions. On Cu, the situation is quite different. The TaN{sub x} thin films on these surfaces are not continuous, and our results point to a mixed layer of TaN{sub x} and Cu forming during ALD. In all cases, if one were to rely solely on results from ARXPS, the picture would be incomplete as the results from LEISS are ultimately decisive concerning thin film continuity.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Characteristics of Al-doped ZnO thin films prepared in Ar + H{sub 2} atmosphere and their vacuum annealing behavior

The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H{sub 2} flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H{sub 2} flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H{sub 2} flux, and the lowest resistivity of 4.02 × 10{sup −4}Ω cm is obtained at a H{sub 2} flux of 10 sccm. The average transmittance in the visible region shows little dependence on H{sub 2} flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H{sub 2} flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H{sub 2} exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H{sub 2}, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of E{sub g} increases with the increase in carrier concentration due to Burstein–Moss effect.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates

Transparent conductive ZnO and Ga-doped ZnO (GZO) films were deposited on polyethylene naphtalate (PEN) sheet substrates using electron cyclotron resonance plasma sputtering. Both ZnO and GZO films were highly adhesive to the PEN substrates without inserting an intermediate layer in the interface. When compared at the same thickness, the transparent conductive properties of GZO films on PEN substrates were only slightly inferior to those on glass substrates. However, the carrier concentration of ZnO films on PEN substrates was 1.5 times that of those on glass substrates, whereas their Hall mobility was only 60% at a thickness of 300 nm. The depth profile of elements measured by secondary ion mass spectroscopy revealed the diffusion of hydrocarbons out of the PEN substrate into the ZnO film. Hence, doped carbons may act as donors to enhance carrier concentration, and the intermixing of elements at the interface may deteriorate the crystallinity, resulting in the lower Hall mobility. When the ZnO films were thicker than 400 nm, cracks became prevalent because of the lattice mismatch strain between the film and the substrate, whereas GZO films were free of cracks. The authors investigated how rolling the films around a cylindrical pipe surface affected their conductive properties. Degraded conductivity occurred at a threshold pipe radius of 10 mm when tensile stress was applied to the film, but it occurred at a pipe radius of 5 mm when compressive stress was applied. These values are guidelines for bending actual devices fabricated on PEN substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films

Growth of fully dense refractory thin films by means of physical vapor deposition (PVD) requires elevated temperatures T{sub s} to ensure sufficient adatom mobilities. Films grown with no external heating are underdense, as demonstrated by the open voids visible in cross-sectional transmission electron microscopy images and by x-ray reflectivity results; thus, the layers exhibit low nanoindentation hardness and elastic modulus values. Ion bombardment of the growing film surface is often used to enhance densification; however, the required ion energies typically extract a steep price in the form of residual rare-gas-ion-induced compressive stress. Here, the authors propose a PVD strategy for the growth of dense, hard, and stress-free refractory thin films at low temperatures; that is, with no external heating. The authors use TiN as a model ceramic materials system and employ hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS and DCMS) in Ar/N{sub 2} mixtures to grow dilute Ti{sub 1−x}Ta{sub x}N alloys on Si(001) substrates. The Ta target driven by HIPIMS serves as a pulsed source of energetic Ta{sup +}/Ta{sup 2+} metal–ions, characterized by in-situ mass and energy spectroscopy, while the Ti target operates in DCMS mode (Ta-HIPIMS/Ti-DCMS) providing a continuous flux of metal atoms to sustain a high deposition rate. Substrate bias V{sub s} is applied in synchronous with the Ta-ion portion of each HIPIMS pulse in order to provide film densification by heavy-ion irradiation (m{sub Ta} = 180.95 amu versus m{sub Ti} = 47.88 amu) while minimizing Ar{sup +} bombardment and subsequent trapping in interstitial sites. Since Ta is a film constituent, primarily residing on cation sublattice sites, film stress remains low. Dense Ti{sub 0.92}Ta{sub 0.08}N alloy films, 1.8 μm thick, grown with T{sub s} ≤ 120 °C (due to plasma heating) and synchronized bias, V{sub s} = 160 V, exhibit nanoindentation hardness H = 25.9 GPa and elastic modulus E = 497 GPa compared to 13.8 and 318 GPa for underdense Ti-HIPIMS/Ti-DCMS TiN reference layers (T{sub s} < 120 °C) grown with the same V{sub s}, and 7.8 and 248 GPa for DCMS TiN films grown with no applied bias (T{sub s} < 120 °C). Ti{sub 0.92}Ta{sub 0.08}N residual stress is low, σ = −0.7 GPa, and essentially equal to that of Ti-HIPIMS/Ti-DCMS TiN films grown with the same substrate bias.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of Pb content and solution concentration of Pb{sub x}TiO{sub 3} seed layer on (100)-texture and ferroelectric/dielectric behavior of PZT (52/48) thin films

The effect of Pb content and solution concentration of lead titanate (Pb{sub x}TiO{sub 3}) seed layer on the texture and electric properties of Pb{sub 1.1}(Zr{sub 0.52},Ti{sub 0.48})O{sub 3} (PZT) thin films was investigated. A variety of seed layers (y Pb{sub x}TiO{sub 3}) with varying solution concentration (y = 0.02, 0.05, 0.1, and 0.2 M) and Pb content (x = 1.0, 1.05, 1.1, and 1.2) was deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates using chemical-solution deposition method. PZT films were then deposited on these seed layers using the same process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy investigations of the seed layers confirm change in crystal structure with variation in the solution properties. XRD studies of PZT films deposited on seed layers demonstrate that the seed layer helps in enhancing (100)-texture and suppressing (111)-texture. It was observed that PZT films prepared on seed layers with lower solution concentrations results in highly (100)-textured films, which further helps to improve the electric properties. The polarization and dielectric constant of the PZT films were seen to increase while the coercive field decreased with increase in (100)-texture. Irrespective of the seed layer solution concentration, higher Pb content in the seed layer deteriorates the PZT film properties. Ninety-five percent to ninety-six percent (100)-texture was obtained from thin PZT films deposited on seed layers of 0.02 M solution concentration with 1.05 and 1.10 Pb contents, which is higher than the values reported for thick PZT films. Optimization of both Pb content and solution concentration of the seed layer is a promising route to achieve highly (100)-textured PZT films with improved electric properties.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characterization of Cu2ZnSnS4 Thin Films Prepared by the Sulfurization of Co-sputtered Metal Precursors

In this work, we report on the synthesis and characterization of Cu2ZnSnS4 (CZTS) thin films prepared by annealing of co-sputtered metal precursors in sulfur atmosphere. Radio-frequency magnetron sputtering was applied to deposit the metal layers from single metal targets on Mo-coated soda-lime glass substrates. The chemical composition of the precursors was controlled by varying the sputtering working power, resulting in films with various compositions. X-ray fluorescence was used to determine the elemental concentration of these metal films. The metal precursors were then converted into CZTS in a tube furnace using different sulfurization conditions to investigate the effect of the annealing process on the properties of the final CZTS films. Film structural characterization and phase identification results were supported by X-ray diffraction (XRD) and Raman spectroscopy. Surface and cross-sectional film morphology was carried out by scanning electron microscopy (SEM). For the sulfurized films, significant Sn loss was noticed. However, the loss of Sn was successfully controlled by depositing precursors with an excess of Sn. After optimizing the composition of the metal precursor, XRD and Raman scattering results revealed single-phase CZTS films without clear signs of secondary phases. SEM showed improved morphology in the form of dense structures and smooth surfaces for the films sulfurized at 600 degrees C. Our first solar cell, based on a CZTS film originating from a precursor sulfurized at 550 degrees C for 60 min, showed an open-circuit voltage of 471 mV, a short-circuit current density of 9.92 mA/cm-2, a fill factor of 36.9%, and an efficiency of 1.72%.

14 SOLAR ENERGY↗
DOE OSTI2014

SU-E-T-76: Comparing Homogeneity Between Gafchromic Film EBT2 and EBT3

Purpose: We found out that homogeneity of EBT2 was different among lot numbers in previous study. Variation in local homogeneity of EBT3 among several lot numbers has not been reported. In this study, we investigated film homogeneity of Gafcrhomic EBT3 films compared with EBT2 films. Methods: All sheets from five lots were cut into 12 pieces to investigate film homogeneity, and were irradiated at 0.5, 2, and 3 Gy. To investigate intra- and inter-sheet uniformity, five sheets from five lots were exposed to 2 Gy: intra-sheet uniformity was evaluated by the coefficient of variation of homogeneity for all pieces of a single sheet, and inter-sheet uniformity was evaluated by the coefficient of variation of homogeneity among the same piece numbers in the five sheets. To investigate the difference of ADC value in various doses, a single sheet from each of five lots was irradiated at 0.5 Gy and 3 Gy in addition to 2 Gy. A scan resolution of 72 dots per inch (dpi) and color depth of 48-bit RGB were used. Films were analyzed by the inhouse software; Average of ADC value in center ROI and profile X and Y axis were measured. Results and Conclusion: Intra-sheet uniformity of non-irradiated EBT2 films were ranged from 0.1% to 0.4%, however that of irradiated EBT2 films were ranged from 0.2% to 1.5%. On the other hand, intra-sheet uniformity of irradiated and non-irradiated EBT3 films were from 0.2% to 0.6%. Inter-sheet uniformity of all films were less than 0.5%. It was interesting point that homogeneity of EBT3 between no-irradiated and irradiated films were similar value, whereas EBT2 had dose dependence of homogeneity in ADC value evaluation. These results suggested that EBT3 homogeneity was corrected by this feature.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

SU-E-CAMPUS-T-06: Radiochromic Film Analysis Based On Principal Components

Purpose: An algorithm to convert the color image of scanned EBT2 radiochromic film [Ashland, Covington KY] into a dose map was developed based upon a principal component analysis. The sensitive layer of the EBT2 film is colored so that the background streaks arising from variations in thickness and scanning imperfections may be distinguished by color from the dose in the exposed film. Methods: Doses of 0, 0.94, 1.9, 3.8, 7.8, 16, 32 and 64 Gy were delivered to radiochromic films by contact with a calibrated Sr-90/Y-90 source. They were digitized by a transparency scanner. Optical density images were calculated and analyzed by the method of principal components. The eigenimages of the 0.94 Gy film contained predominantly noise, predominantly background streaking, and background streaking plus the source, respectively, in order from the smallest to the largest eigenvalue. Weighting the second and third eigenimages by −0.574 and 0.819 respectively and summing them plus the constant 0.012 yielded a processed optical density image with negligible background streaking. This same weighted sum was transformed to the red, green and blue space of the scanned images and applied to all of the doses. The curve of processed density in the middle of the source versus applied dose was fit by a twophase association curve. A film was sandwiched between two polystyrene blocks and exposed edge-on to a different Y-90 source. This measurement was modeled with the GATE simulation toolkit [Version 6.2, OpenGATE Collaboration], and the on-axis depth-dose curves were compared. Results: The transformation defined using the principal component analysis of the 0.94 Gy film minimized streaking in the backgrounds of all of the films. The depth-dose curves from the film measurement and simulation are indistinguishable. Conclusion: This algorithm accurately converts EBT2 film images to dose images while reducing noise and minimizing background streaking. Supported by a sponsored research agreement from IsoTherapeutics Group, LLC.

07 ISOTOPE AND RADIATION SOURCES↗