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At least 1,243 records · Page 69

Progress in p(+)n InP solar cells fabricated by thermal diffusion

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Faur, Mircea↗

Electrolyte Vapor Induced Passivation and Transition Metal Redox on Electrode Active Materials

The gaseous environment that battery electrodes are exposed to is critical to their electrochemical performance, and yet, the impact of vapor-phase components in the glovebox is relatively unexplored. In this study, we examine how the surface of Li 4 Ti 5 O 12 and LiFePO 4 composite electrodes evolve upon exposure to 1 M LiPF 6 in ethylene carbonate:dimethyl carbonate electrolyte vapors in an argon-filled glovebox. Spatially resolved X-ray photoemission electron microscopy and X-ray photoelectron spectroscopy reveal that even brief (15 minutes) contact with electrolyte vapor initiates the formation of a LiF film and changes the oxidation state of transition metals at the particle surface. Notably, these modifications occur selectively on active material particles and not on binder or conductive carbon, underscoring the specificity of vapor-induced reactions. Prolonged exposure to electrolyte vapor over the course of 1 week yields thicker, more chemically complex interphases containing both LiF and lithium oxyfluorophosphate species (Li x PO y F z ). Subsequent electrochemical testing shows that vapor-induced passivation layers influence first cycle capacities, lithium (de)insertion overpotentials, and charge-transfer resistance values. In conclusion, these results indicate that vapor–electrode interactions may be a source of variability in electrochemical behavior over time and suggest that other, more reactive electrode materials may also be susceptible to interactions with electrolyte vapor.

36 MATERIALS SCIENCE↗

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

Miyoshi, K.↗

Fabrication of a Cryogenic Terahertz Emitter for Bolometer Focal Plane Calibrations

A fabrication process is reported for prototype emitters of THz radiation, which operate cryogenically, and should provide a fast, stable blackbody source suitable for characterization of THz devices. The fabrication has been demonstrated and, at the time of this reporting, testing was underway. The emitter is similar to a monolithic silicon bolometer in design, using both a low-noise thermometer and a heater element on a thermally isolated stage. An impedance-matched, high-emissivity coat ing is also integrated to tune the blackbody properties. This emitter is designed to emit a precise amount of power as a blackbody spectrum centered on terahertz frequencies. The emission is a function of the blackbody temperature. An integrated resistive heater and thermometer system can control the temperature of the blackbody with greater precision than previous incarnations of calibration sources that relied on blackbody emission. The emitter is fabricated using a silicon- on-insulator substrate wafer. The buried oxide is chosen to be less than 1 micron thick, and the silicon device thickness is 1-2 microns. Layers of phosphorus compensated with boron are implanted into and diffused throughout the full thickness of the silicon device layer to create the thermometer and heater components. Degenerately doped wiring is implanted to connect the devices to wire-bondable contact pads at the edge of the emitter chip. Then the device is micromachined to remove the thick-handle silicon behind the thermometer and heater components, and to thermally isolate it on a silicon membrane. An impedance- matched emissive coating (ion assisted evaporated Bi) is applied to the back of the membrane to enable high-efficiency emission of the blackbody spectrum.

Chervenak, James↗

Submicrosecond Power-Switching Test Circuit

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Folk, Eric N.↗

Self-Assembled Monolayer Patterning for PolySi/SiO2 Passivated Contacts

We utilize hexamethyldisilazane (HMDS) based self assembled monolayers to pattern polysilicon (polySi) passivated contacts. We find process conditions that allow for etching front side n/polySi between fingers; thereby increasing Jsc. Importantly, the Voc does not degrade indicating the additional process steps do not introduce defects or impurities. HMDS layers remain on the surface for metallization without detriment to transport.

degradation↗

Investigation of the oxidation behavior of dispersion stabilized alloys when exposed to a dynamic high temperature environment

The oxidation behavior of TD-NiCr and TD-NiCrAlY alloys have been studied at 2000 and 2200 F in static and high speed flowing air environments. The TD-NiCrAlY alloys preoxidized to produce an Al2O3 scale on the surface showed good oxidation resistance in both types of environments. The TD-NiCr alloy which had a Cr2O3 oxide scale after preoxidation was found to oxidize more than an order of magnitude faster under the dynamic test conditions than at comparable static test conditions. Although Cr2O3 normally provides good oxidation protection, it was rapidly lost due to formation of volatile CrO3 when exposed to the high speed air stream. The preferred oxide arrangement for the dynamic test consisted of an external layer of NiO with a porous mushroom type morphology, an intermediate duplex layer of NiO and Cr2O3, and a continuous inner layer of Cr2O3 in contact with the alloy substrate. An oxidation model has been developed to explain the observed microstructure and overall oxidation behavior of all alloys.

Tenney, D. R.↗

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Source record↗

Electrostatic Levitation: A Tool to Support Materials Research in Microgravity

Containerless processing represents an important topic for materials research in microgravity. Levitated specimens are free from contact with a container, which permits studies of deeply undercooled melts, and high-temperature, highly reactive materials. Containerless processing provides data for studies of thermophysical properties, phase equilibria, metastable state formation, microstructure formation, undercooling, and nucleation. The European Space Agency (ESA) and the German Aerospace Center (DLR) jointly developed an electromagnetic levitator facility (MSL-EML) for containerless materials processing in space. The electrostatic levitator (ESL) facility at the Marshall Space Flight Center provides support for the development of containerless processing studies for the ISS. Apparatus and techniques have been developed to use the ESL to provide data for phase diagram determination, creep resistance, emissivity, specific heat, density/thermal expansion, viscosity, surface tension and triggered nucleation of melts. The capabilities and results from selected ESL-based characterization studies performed at NASA's Marshall Space Flight Center will be presented.

Rogers, Jan↗

Study of CORC Conductors With Respect to Individual Tape Properties

CEA has been studying the advantages of a conductor based on an assembly of CORC cables in the high field zone of a hybrid Central Solenoid (CS) magnet for EU-DEMO. To this end, the detailed study of geometrical and electrical parameters of a CORC structure are studied in order to evaluate the cable’s electrical performance as well as to determine a number of important parameters (crossing points, contact surface etc…) as function of the cable structure. The paper first presents these geometrical and performance analyses. It will then try to introduce smeared models in order to reduce the cable’s performance to 1D tape scaling law using effective parameters. That reduction is of importance for use in thermohydraulic models. Finally, the paper will present the case study of a particular CORC conductor that is being procured and is foreseen to be tested in SULTAN in 2025. The paper also will try to give some predictive estimate of the cable performance and identify some of the unknowns related to current redistribution and joint resistance.

CORC↗

Release-rate calorimetry of multilayered materials for aircraft seats

Multilayered samples of contemporary and improved fire resistant aircraft seat materials (foam cushion, decorative fabric, slip sheet, fire blocking layer, and cushion reinforcement layer) were evaluated for their rates of heat release and smoke generation. Top layers (decorative fabric, slip sheet, fire blocking, and cushion reinforcement) with glass fiber block cushion were evaluated to determine which materials based on their minimum contributions to the total heat release of the multilayered assembly may be added or deleted. Top layers exhibiting desirable burning profiles were combined with foam cushion materials. The smoke and heat release rates of multilayered seat materials were then measured at heat fluxes of 1.5 and 3.5 W/sq cm. Choices of contact and silicone adhesives for bonding multilayered assemblies were based on flammability, burn and smoke generation, animal toxicity tests, and thermal gravimetric analysis. Abrasion tests were conducted on the decorative fabric covering and slip sheet to ascertain service life and compatibility of layers.

Fewell, L. L.↗

Composite materials for rail transit systems

The potential is explored for using composite materials in urban mass transit systems. The emphasis was to identify specific advantages of composite materials in order to determine their actual and potential usage for carbody and guideway structure applications. The literature was reviewed, contacts were made with major domestic system operators, designers, and builders, and an analysis was made of potential composite application to railcar construction. Composites were found to be in use throughout the transit industry, usually in secondary or auxiliary applications such as car interior and nonstructural exterior panels. More recently, considerable activity has been initiated in the area of using composites in the load bearing elements of civil engineering structures such as highway bridges. It is believed that new and improved manufacturing refinements in pultrusion and filament winding will permit the production of beam sections which can be used in guideway structures. The inherent corrosion resistance and low maintenance characteristics of composites should result in lowered maintenance costs over a prolonged life of the structure.

Griffin, O. Hayden, Jr.↗

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗

Comparing Transition-Edge Sensor Response Times in a Modified Contact Scheme with Different Support Beams

We present measurements of the thermal conductance, G, and effective time constants, tau, of three transition-edge sensors (TESs) populated in arrays operated from 80-87mK with T(sub C) approximately 120mK. Our TES arrays include several variations of thermal architecture enabling determination of the architecture that demonstrates the minimum noise equivalent power (NEP), the lowest tau and the trade-offs among designs. The three TESs we report here have identical Mo/Cu bilayer thermistors and wiring structures, while the thermal architectures are: 1) a TES with straight support beams of 1mm length, 2) a TES with meander support beams of total length 2mm and with 2 phononfilter blocks per beam, and 3) a TES with meander support beams of total length 2mm and with 6 phonon-filter blocks per beam. Our wiring scheme aims to lower the thermistor normal state resistance R(sub N) and increase the sharpness of the transition alpha=dlogR/dlogT at the transition temperature T(sub C). We find an upper limit of given by (25+/-10), and G values of 200fW/K for 1), 15fW/K for 2), and 10fW/K for 3). The value of alpha can be improved by slightly increasing the length of our thermistors.

SAFARI instrument↗

Characterization of high-flux cadmium zinc telluride detectors coupled to MM-PAD readout ASICs for high-flux X-ray applications

High-flux cadmium zinc telluride (HF-CZT) is a promising material for next-generation X-ray imaging due to its high stopping power, wide bandgap, and improved resistance to radiation-induced polarization [1]. We bonded 2 mm thick HF-CZT sensors with Cornell's Mixed-Mode Pixel Array ASICs, which combine analog charge integration and in-pixel digital counting to achieve single X-ray sensitivity, large full well capacity, and frame rates up to 10 kHz [2,3]. Detector characterization showed stable electron collection above 150 V bias, while hole collection remained limited by trapping even at 700 V. Temporal studies revealed non-negligible afterglow, with an unexpected increase in afterglow at higher biases, which was reduced by infrared illumination, suggesting that injected carriers reduce trapping near contact interfaces. Polarization measurements confirmed improved stability compared to conventional CZT, though polarization effects persisted, particularly with hole collection, with up to 5% signal loss and spatial distortion at high doses.

36 MATERIALS SCIENCE↗

The right conditions for high-precision dynamic temperature and heat capacity measurement via pyrometry and conductivity

The pursuit of accurate bulk temperature T under extreme conditions has been a long-standing goal of the high pressure science community, complicated by a lack of data to inform models. To reach these extremely high-pressure, high-temperature (high P − T) conditions, a combination of dynamic and heated static experiments (e.g., diamond or gem anvil cel experiments) are used. For example, in a diamond anvil cell (DAC) experiment, a sample placed in the DAC is first pressurized. Following pressurization, the sample T is increased either by heating the entire DAC (usually using resistive heating, and limited to ∼1000K) or by applying intense laser power to the sample surfaces. In a dynamic experiment, the process of pressurizing the sample also heats it. In the case of shock physics experiments, such heating is substantial, easily reaching thousands of Kelvin; in our work we have seen T ∼17000K. Most methods of measuring temperature at ambient are not compatible with experiments under these high-pressure, high-temperature conditions: thermocouples break, melt, or have conductivity properties that differ from ambient where they are calibrated; thermometers would melt; both are too slow. As a result most methods are based on non-contact techniques such as x-ray diffraction broadening, neutron scattering, or optical methods. Of these, optical methods using the visible and near-infrared region of the spectrum are the most commonly used as the sources and detectors are readily available. In the case of optical methods the optical depth, and therefore the measurement location, is limited to the surface. When a window or anvil material is used, heat flows from the sample into the window/anvil. Likewise, if the sample undergoes a change in thermodynamic state, such as expansion upon release, different T may be expected. As a result, the surface or apparent temperature T app measurement will differ from the bulk or interior temperature that is desired. This surface measurement must be related to the bulk measurement using thermal transport models and material models. While it is tempting to conclude that one should just use x-ray methods that directly probe the interior, even these methods have been shown to depend on thermal transport and material models. Regardless of the method used to create the high P − T condition, therefore, we must understand the role of thermal transport and material models upon our interpretation of the T measurement, as well as the errors and uncertainties associated with the choice of models used in the analysis. This is a substantial area of research and this paper is by no means a complete survey of the relevant sources of uncertainty. For example, we have yet to begin to address alternate transport models in a detailed manner (e.g., Tan-Ahrens), or the many models that use additional layers to approximate melting, turbulence, or epitaxial phenomena). Likewise, we have not explored the impact upon uncertainty of thermal models that use temperature-dependent thermal transport coefficients, or the wide range of material models that can be applied. Instead, this paper focuses on using one simple model, the Urtiew-Grover model, to understand the sources of error in T measurement so that we may identify how best to focus future research efforts to return the best improvements and avoid working on over-optimizing a single type of measurement. To this end, we work through some of the best and worst case scenarios for T measurement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

Kaul, Anupama B.↗

Release-rate calorimetry of multilayered materials for aircraft seats

Multilayered samples of contemporary and improved fire-resistant aircraft seat materials (foam cushion, decorative fabric, slip sheet, fire-blocking layer, and cushion-reinforcement layer) were evaluated for their rates of heat release and smoke generation. Top layers (decorative fabric, slip sheet, fire blocking, and cushion reinforcement) with glass-fiber block cushion were evaluated to determine which materials, based on their minimum contributions to the total heat release of the multilayered assembly, may be added or deleted. Top layers exhibiting desirable burning profiles were combined with foam cushion materials. The smoke and heat-release rate of multilayered seat materials were then measured at heat fluxes of 1.5 and 3.5 W/sq cm. Choices of contact and silicon adhesives for bonding multilayered assemblies were based on flammability, burn and smoke generation, animal toxicity tests, and thermal gravimetric analysis.

Fewell, L. L.↗