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This paper describes a new two-capacitor memory cell configuration that provides an enhanced bipolar optoelectric response from the edges of the capacitor at incident power as low as ~ 2mW/micrometer squared.
Under a U.S. Department of Energy program for radioisotope power systems, Lockheed Martin is developing an Engineering Unit of the Advanced Stirling Radioisotope Generator (ASRG). This is an advanced version of the previously reported SRG110 generator. The ASRG uses Advanced Stirling Convertors (ASCs) developed by Sunpower Incorporated under a NASA Research Announcement contract. The ASRG makes use of a Stirling controller based on power electronics that eliminates the tuning capacitors. The power electronics controller synchronizes dual-opposed convertors and maintains a fixed frequency operating point. The controller is single-fault tolerant and uses high-frequency pulse width modulation to create the sinusoidal currents that are nearly in phase with the piston velocity, eliminating the need for large series tuning capacitors. Sunpower supports this effort through an extension of their controller development intended for other applications. Glenn Research Center (GRC) supports this effort through system dynamic modeling, analysis and test support. The ASRG design arrived at a new baseline based on a system-level trade study and extensive feedback from mission planners on the necessity of single-fault tolerance. This paper presents the baseline design with an emphasis on the power electronics controller detailed design concept that will meet space mission requirements including single fault tolerance.
Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a plasma current sheet in propellant located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current with an induced magnetic field. The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster [1,2] is a type of pulsed inductive plasma accelerator in which the plasma is preionized by a mechanism separate from that used to form the current sheet and accelerate the gas. Employing a separate preionization mechanism in this manner allows for the formation of an inductive current sheet at much lower discharge energies and voltages than those found in previous pulsed inductive accelerators like the Pulsed Inductive Thruster (PIT). In a previous paper [3], the authors presented a basic design for a 100 J/pulse FARAD laboratory-version thruster. The design was based upon guidelines and performance scaling parameters presented in Refs. [4, 5]. In this paper, we expand upon the design presented in Ref. [3] by presenting a fully-assembled and operational FARAD laboratory-model thruster and addressing system and subsystem-integration issues (concerning mass injection, preionization, and acceleration) that arose during assembly. Experimental data quantifying the operation of this thruster, including detailed internal plasma measurements, are presented by the authors in a companion paper [6]. The thruster operates by first injecting neutral gas over the face of a flat, inductive acceleration coil and at some later time preionizing the gas. Once the gas is preionized current is passed through the acceleration coil, inducing a plasma current sheet in the propellant that is accelerated away from the coil through electromagnetic interaction with the time-varying magnetic field. Neutral gas is injected over the face of the acceleration coil through a fast-acting valve that feeds a central distribution manifold. The thruster is designed to preionize the gas using an RF-frequency ringing signal produced by a discharging Vector Inversion Generator (VIG). The acceleration stage consists of a multiple-turn, multiple-strand spiral induction coil (see Fig. 1, left panel) and is designed for operation at discharge energies on the order of 100 J/pulse. Several different pulsed power train modules can be used to drive current through the acceleration coil. One such power train is based upon the Bernardes and Merryman circuit topology, which restricts voltage reversal on the capacitor banks and can be clamped to eliminate current reversal in the coil. A second option is a pulse-compression-ring power train (see Fig. 1, right panel), which takesa temporally broad, low current pulse and transforms it into a short, high current pulse.
A technique for making superconducting joints between wires made of dissimilar superconducting metals has been devised. The technique is especially suitable for fabrication of superconducting circuits needed to support persistent electric currents in electromagnets in diverse cryogenic applications. Examples of such electromagnets include those in nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI) systems and in superconducting quantum interference devices (SQUIDs). Sometimes, it is desirable to fabricate different parts of a persistent-current-supporting superconducting loop from different metals. For example, a sensory coil in a SQUID might be made of Pb, a Pb/Sn alloy, or a Cu wire plated with Pb/Sn, while the connections to the sensory coil might be made via Nb or Nb/Ti wires. Conventional wire-bonding techniques, including resistance spot welding and pressed contact, are not workable because of large differences between the hardnesses and melting temperatures of the different metals. The present technique is not subject to this limitation. The present technique involves the use (1) of a cheap, miniature, easy-to-operate, capacitor-discharging welding apparatus that has an Nb or Nb/Ti tip and operates with a continuous local flow of gaseous helium and (2) preparation of a joint in a special spark-discharge welding geometry. In a typical application, a piece of Nb foil about 25 m thick is rolled to form a tube, into which is inserted a wire that one seeks to weld to the tube (see figure). The tube can be slightly crimped for mechanical stability. Then a spark weld is made by use of the aforementioned apparatus with energy and time settings chosen to melt a small section of the niobium foil. The energy setting corresponds to the setting of a voltage to which the capacitor is charged. In an experiment, the technique was used to weld an Nb foil to a copper wire coated with a Pb/Sn soft solder, which is superconducting. The joint was evaluated as part of a persistent-current circuit having an inductance of 1 mH. A current was induced in a loop, and no attenuation of the current after a time interval 1,000 s was discernible in a measurement having a fractional accuracy of 10(exp -4): This observation supports the conclusion that the weld had an electrical resistance <10(exp -10) omega.
The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise leave the fundamental timing signal unchanged. The buffered timing signal would be fed as input to the level shifter. The output of the level shifter would serve as a timing and control signal for the high-voltage switch, causing the switch to alternately be (1) opened, allowing the capacitive load to be charged from a high-voltage DC power supply; then (2) closed to discharge the capacitive load to ground. Hence, the output waveform would closely approximate a series of exponential charging and discharging curves (see Figure 2).
Input circuitry is provided for a high voltage operated radiation detector to receive pulses from the detector having a rise time in the range of from about one nanosecond to about ten nanoseconds. An integrator circuit, which utilizes current feedback, receives the incoming charge from the radiation detector and creates voltage by integrating across a small capacitor. The integrator utilizes an amplifier which closely follows the voltage across the capacitor to produce an integrator output pulse with a peak value which may be used to determine the energy which produced the pulse. The pulse width of the output is stretched to approximately 50 to 300 nanoseconds for use by subsequent circuits which may then use amplifiers with lower slew rates.
To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).
Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a current s heet in a plasma located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current and the induced magne tic field, The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster is a type of pulsed inductive plasma accelerator in which t he plasma is preionized by a mechanism separate from that used to for m the current sheet and accelerate the gas. Employing a separate preionization mechanism allows for the formation of an inductive current s heet at much lower discharge energies and voltages than those used in previous pulsed inductive accelerators like the Pulsed Inductive Thr uster (PIT). In this paper, we present the design of a benchtop FARAD thruster with all the subsystems (mass injection, preionization, and acceleration) integrated into a single unit. Design of the thruster follows the guidelines and similarity performance parameters presented elsewhere. The system is designed to use the ringing, RF-frequency s ignal produced by a discharging Vector Inversion Generator (VIG) to p reionize the gas. The acceleration stage operates on the order of 100 J/pulse and can be driven by several different pulsed powertrains. These include a simple capacitor coupled to the system, a Bernardes and Merryman configuration, and a pulsecompression circuit that takes a temporally broad, low current pulse and transforms it into a short, h igh current pulse. A set of applied magnetic field coils are integrated into the system to guide the preionized propellant as it spreads ov er the face of the inductive acceleration coil. The coils are operate d in a pulsed mode, and the thruster can be operated without using the coils to determine if there is a performance improvement gain realiz ed when an applied field is present.
An advanced charger has been proposed for a battery that comprises several lithium-ion cells in series. The proposal is directed toward charging the cells in as nearly an optimum manner as possible despite unit-to-unit differences among the nominally identical cells. The particular aspect of the charging problem that motivated the proposal can be summarized as follows: During bulk charging (charging all the cells in series at the same current), the voltages of individual cells increase at different rates. Once one of the cells reaches full charge, bulk charging must be stopped, leaving other cells less than fully charged. To make it possible to bring all cells up to full charge once bulk charging has been completed, the proposed charger would include a number of top-off chargers one for each cell. The top-off chargers would all be powered from the same DC source, but their outputs would be DC-isolated from each other and AC-coupled to their respective cells by means of transformers, as described below. Each top-off charger would include a flyback transformer, an electronic switch, and an output diode. For suppression of undesired electromagnetic emissions, each top-off charger would also include (1) a resistor and capacitor configured to act as a snubber and (2) an inductor and capacitor configured as a filter. The magnetic characteristics of the flyback transformer and the duration of its output pulses determine the energy delivered to the lithium-ion cell. It would be necessary to equip the cell with a precise voltage monitor to determine when the cell reaches full charge. In response to a full-charge reading by this voltage monitor, the electronic switch would be held in the off state. Other cells would continue to be charged similarly by their top-off chargers until their voltage monitors read full charge.
This method uses a magnetic-field- response contact sensor that is designed to identify surface contact and motion between contact locations. The sensor has three components: (1) a capacitor-inductor circuit with two sets of electrical contact pads, (2) a capacitor with a set of electrical contact pads, and (3) an inductor with a set of electrical contact pads. A unique feature of this sensor is that it is inherently multifunctional. Information can be derived from analyzing such sensor response attributes as amplitude, frequency, and bandwidth. A change in one attribute can be due to a change in a physical property of a system. A change in another attribute can be due to another physical property, which has no relationship to the first one.
It is found that the impulse of a pulsed inductive plasma thruster utilizing preionization is maximized for a particular ratio of the stored energy in the capacitor to the injected propellant mass. The fact that the impulse depends on the ratio of the initial stored energy to injected propellant mass agrees with previous current sheet studies, supporting the idea that a Townsend-like breakdown process strongly influences current sheet formation, and in turn, current sheet formation strongly affects the operational efficiency of the device. The optimum in half cone angle of the inductive coil can be explained in terms of a balance between the direct axial acceleration and the radial pinching contribution to thrust. From the trends in these data we conclude that operation at the correct ratio of capacitor energy to propellant mass is essential for efficient operation of pulsed inductive plasma thrusters employing a preionized propellant.
In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma
Multiplexing and differential transducers based on tunnel-diode oscillators (TDOs) would be developed, according to a proposal, for operation at very low and/or widely varying temperatures in applications that involve requirements to minimize the power and mass of transducer electronic circuitry. It has been known since 1975 that TDOs are useful for making high-resolution (of the order of 10(exp -9)) measurements at low temperatures. Since that time, TDO transducers have been found to offer the following additional advantages, which the present proposal is intended to exploit: TDO transducers can operate at temperatures ranging from 1 K to about 400 K. Most electronic components other than tunnel diodes do not operate over such a wide temperature range. TDO transducers can be made to operate at very low power - typically, <1 mW. Inasmuch as the response of a TDO transducer is a small change in an arbitrarily set oscillation frequency, the outputs of many TDOs operating at sufficiently different set frequencies can be multiplexed through a single wire. Inasmuch as frequencies can be easily subtracted by means of mixing circuitry, one can easily use two TDOs to make differential measurements. Differential measurements are generally more precise and less susceptible to environmental variations than are absolute measurements. TDO transducers are tolerant to ionizing radiation. Ultimately, the response of a TDO transducer is measured by use of a frequency counter. Because frequency counting can be easily implemented by use of clock signals available from most microprocessors, it is not necessary to incorporate additional readout circuitry that would, if included, add to the mass and power consumption of the transducer circuitry. In one example of many potential variations on the basic theme of the proposal, the figure schematically depicts a conceptual differential-pressure transducer containing a symmetrical pair of TDOs. The differential pressure would be exerted on an electrically conductive and grounded diaphragm, which, at zero differential pressure, would nominally be sprung to a middle position between two capacitor plates that would be parts of the two TDOs. The frequencies of the two TDOs would vary in opposite directions as variations in differential pressure bent the diaphragm away from one capacitor plate and toward the other. The outputs of the TDOs would be mixed and lowpass filtered to obtain a signal at the difference between the frequencies of the two TDOs. The difference frequency would be measured by a frequency counter and converted to differential pressure by a computer.
According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator
An engineering discipline denoted as hybrid power management (HPM) has emerged from continuing efforts to increase energy efficiency and reliability of hybrid power systems. HPM is oriented toward integration of diverse electric energy-generating, energy-storing, and energy-consuming devices in optimal configurations for both terrestrial and outer-space applications. The basic concepts of HPM are potentially applicable at power levels ranging from nanowatts to megawatts. Potential applications include terrestrial power-generation, terrestrial transportation, biotechnology, and outer-space power systems. Instances of this discipline at prior stages of development were reported (though not explicitly labeled as HPM) in three prior NASA Tech Briefs articles: "Ultracapacitors Store Energy in a Hybrid Electric Vehicle"(LEW-16876), Vol. 24, No. 4 (April 2000), page 63; "Photovoltaic Power Station With Ultracapacitors for Storage" (LEW-17177), Vol. 27, No. 8 (August 2003), page 38; and "Flasher Powered by Photovoltaic Cells and Ultracapacitors" (LEW-17246), Vol. 24, No. 10 (October 2003), page 37. As the titles of the cited articles indicate, the use of ultracapacitors as energy-storage devices lies at the heart of HPM. An ultracapacitor is an electrochemical energy-storage device, but unlike in a conventional rechargeable electrochemical cell or battery, chemical reactions do not take place during operation. Instead, energy is stored electrostatically at an electrode/electrolyte interface. The capacitance per unit volume of an ultracapacitor is much greater than that of a conventional capacitor because its electrodes have much greater surface area per unit volume and the separation between the electrodes is much smaller. Power-control circuits for ultracapacitors can be simpler than those for batteries, for two reasons: (1) Because of the absence of chemical reactions, charge and discharge currents can be greater than those in batteries, limited only by the electrical resistances of conductors; and (2) whereas the charge level of a battery depends on voltage, temperature, age, and load condition, the charge level of an ultracapacitor, like that of a conventional capacitor, depends only on voltage.
Two documents present wide-ranging discussions of some issues in the design and operation of signal-conditioning circuits. The first document focuses on active low-pass filter circuits that contain resistors, capacitors, and operational amplifiers. It describes design and operational problems encountered previously, deficiencies of prior designs, and four design improvements to overcome the deficiencies. These improvements are as follows: 1. An offset-calibration feature in which an electronic switch isolates a filter capacitor in order to preserve its voltage during a calibration performed to measure the offset voltage of the operational amplifier; 2. Configuring a pair of complementary operational amplifiers to prevent latchup and decrease the degree of nonlinearity in overall response; 3. Minimizing distortion by taking the filter output from the operational-amplifier output nodes instead of from one of the other nodes as in prior designs; and 4. Providing for switching different feedback resistors to change filter break frequencies. The second document addresses topics in the architecture of signal-conditioning and multiplexing circuitry. Improvements are described as being made with respect to greater compactness, increased flexibility in accommodating a variety of inputs, improvements in filter performance, simplification of wiring, and reconfigurability of designs.
An effort is under way to develop capacitive sensors for measuring the masses of cryogenic fluids in tanks. These sensors are intended to function in both microgravitational and normal gravitational settings, and should not be confused with level sensors, including capacitive ones. A sensor of this type is conceptually simple in the sense that (1) it includes only one capacitor and (2) if properly designed, its single capacitance reading should be readily convertible to a close approximation of the mass of the cryogenic fluid in the tank. Consider a pair of electrically insulated electrodes used as a simple capacitive sensor. In general, the capacitance is proportional to the permittivity of the dielectric medium (in this case, a cryogenic fluid) between the electrodes. The success of design and operation of a sensor of the present type depends on the accuracy of the assumption that to a close approximation, the permittivity of the cryogenic fluid varies linearly with the density of the fluid. Data on liquid nitrogen, liquid oxygen, and liquid hydrogen, reported by the National Institute of Standards and Technology, indicate that the permittivities and densities of these fluids are, indeed, linearly related to within a few tenths of a percent over the pressure and temperature regions of interest. Hence, ignoring geometric effects for the moment, the capacitance between two electrodes immersed in the fluid should vary linearly with the density, and, hence, with the mass of the fluid. Of course, it is necessary to take account of the tank geometry. Because most cryogenic tanks do not have uniform cross sections, the readings of level sensors, including capacitive ones, are not linearly correlated with the masses of fluids in the tanks. In a sensor of the present type, the capacitor electrodes are shaped so that at a given height, the capacitance per unit height is approximately proportional to the cross-sectional area of the tank in the horizontal plane at that height (see figure).
Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article, several experiments on RIE in BCl3 and Cl2 (and sometimes Ar) had demonstrated the 10:1 selectivity ratio, and further experiments to enhance understanding and obtain further guidance for optimizing process conditions were planned.