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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Self-assembled III-V quantum dots: potential for silicon optoelectronics

The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

nanotechnologies quantum dot devices heteroepitaxy↗
NASA NTRS2011

Ab initio Computations of the Electronic, Mechanical, and Thermal Properties of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2

Refractory materials such as metallic borides, often considered as ultra high temperature ceramics (UHTC), are characterized by high melting point, high hardness, and good chemical inertness. These materials have many applications which require high temperature materials that can operate with no or limited oxidation. Ab initio, first principles methods are the most accurate modeling approaches available and represent a parameter free description of the material based on the quantum mechanical equations. Using these methods, many of the intrinsic properties of these material can be obtained. We performed ab initio calculations based on density functional theory for the UHTC materials ZrB2 and HfB2. Computational results are presented for structural information (lattice constants, bond lengths, etc), electronic structure (bonding motifs, densities of states, band structure, etc), thermal quantities (phonon spectra, phonon densities of states, specific heat), as well as information about point defects such as vacancy and antisite formation energies.

Lawson, John W.↗
DOE OSTI2013

HELIUM EFFECTS ON DISPLACEMENT CASCADE IN TUNGSTEN

Molecular dynamics (MD) simulations were performed to investigate He effects on displacement cascades in W. Helium content, proportion of interstitial and substitutional He and temperature were varied to reveal the various effects. The effect of interstitial He on the number of self-interstitial atoms (SIAs) produced during cascade damage appears to be insignificant. However, interstitial He tends to fill a vacancy (V). Nevertheless, this process is less favorable than SIA-V recombination particularly when excess SIAs are present before a cascade. The efficiency of He filling and SIA-V recombination increases as temperature increases due to increased point defect mobility. Likewise, substitutional He is more susceptible to displacement during a collision cascade than W. This susceptibility increases towards higher temperatures. Consequently, the number of surviving V is governed by the interplay between displaced substitutional He and SIA-V recombination. The temperature dependence of these processes results in a minimum number of V reached at an intermediate temperature.

damage↗
DOE OSTI2014

Neutron Scattering Investigation of Phonon Scattering Rates in Ag1-xSb1+xTe2+x (x = 0, 0.1, and 0.2)

The phonon dispersions and scattering rates of the thermoelectric material AgSbTe$_{2}$ were measured as a function of temperature with inelastic neutron scattering. The results show that phonon scattering rates are large and weakly dependent on temperature. The lattice thermal conductivity was calculated from the measured phonon lifetimes and group velocities, providing good agreement with bulk transport measurements. The measured phonon scattering rates and their temperature dependence are compared with models of phonon scattering by anharmonicity and point defect. We find that these processes cannot account for the large total phonon scattering rates observed, and their lack of temperature dependence. Neutron and synchrotron diffraction measurements on single crystals revealed an extensive nanostructure from cation ordering, which is likely responsible for the strong phonon scattering.

Abernathy, Douglas L↗
DOE OSTI2015

OBJECT KINETIC MONTE CARLO SIMULATIONS OF RADIATION DAMAGE IN TUNGSTEN

We used our recently developed lattice-based object kinetic Monte Carlo code; KSOME [1] to carryout simulations of radiation damage in bulk tungsten at temperatures of 300, and 2050 K for various dose rates. Displacement cascades generated from molecular dynamics (MD) simulations for PKA energies at 60, 75 and 100 keV provided residual point defect distributions. It was found that the number density of vacancies in the simulation box does not change with dose rate while the number density of vacancy clusters slightly decreases with dose rate indicating that bigger clusters are formed at larger dose rates. At 300 K, although the average vacancy cluster size increases slightly, the vast majority of vacancies exist as mono-vacancies. At 2050 K no accumulation of defects was observed during irradiation over a wide range of dose rates for all PKA energies studied in this work.

Nandipati, Giridhar↗
DOE OSTI2016

EFFECT OF STRAIN FIELD ON THRESHOLD DISPLACEMENT ENERGY OF TUNGSTEN STUDIED BY MOLECULAR DYNAMICS SIMULATION

The influence of hydrostatic strain on point defect formation energy and threshold displacement energy (Ed) in body-centered cubic (BCC) tungsten was studied with molecular dynamics simulations. Two different tungsten potentials (Fikar and Juslin) were used. The minimum Ed direction calculated with the Fikar-potential was <100>, but with the Juslin-potential it was <111>. The most stable self-interstitial (SIA) configuration was a <111>-crowdion for both potentials. The stable SIA configuration did not change with applied strain. Varying the strain from compression to tension increased the vacancy formation energy but decreased the SIA formation energy. The SIA formation energy changed more significantly than for a vacancy such that Ed decreased with applied strain from compression to tension.

Wang, D.↗
DOE OSTI2018

Ductile metal alloys, method for making ductile metal alloys

A ductile alloy is provided comprising molybdenum, chromium and aluminum, wherein the alloy has a ductile to brittle transition temperature of about 300 C after radiation exposure. The invention also provides a method for producing a ductile alloy, the method comprising purifying a base metal defining a lattice; and combining the base metal with chromium and aluminum, whereas the weight percent of chromium is sufficient to provide solute sites within the lattice for point defect annihilation.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2017

Transparent group III metal nitride and method of manufacture

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Jiang, Wenkan↗
DOE OSTI2016

Multiscale Model for Simulating Fission-Induced Recrystallization in U-Mo Alloy

U-Mo alloy is one of the most promising fuels for the future high performance research and test reactors due to its high uranium loading density and stable irradiation behavior. However, a major concern to its qualification is the fuel swelling at high fission density due to the formation of large fission-gas bubbles. The fission-induced recrystallization further expedites the formation and growth of gas bubbles. So far, the exact mechanism of recrystallization is still unclear. One possible driving force for recrystallization is the production of point defects and interstitial loops due to irradiation. Following this, we developed a multi-scale model by integrating the rate-theory and phase-field models to study microstructural evolutions in irradiated U-Mo alloy, i.e., fission-induced gas bubble evolution and recrystallization. Density function theory (DFT) calculations are utilized to predict the defect formation energies, diffusivities of defects, the interfacial energy of gas bubble, and the elastic constants of U-Mo alloy, etc. The dislocation density evolution is predicted by the rate-theory developed by Jeff. The grain subdivision occurs once the dislocation density is above a critical value. The grain growth coupled with gas bubbles evolution is modeled using a multi-phase phase-field model. The effects of fission rate and initial grain microstructure on the recrystallization process are systematically investigated. The simulated dislocation density, sub-grain size distribution, and volume fraction of the recrystallization grains under different fission density are comparable with experimental data. (authors)

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2016

Statistical Study of Primary Knock-on Atoms under Neutron Irradiation in RMC Code

Materials in high flux neutron condition will suffer from an evolution of damage which ultimately restricts the lifetime of the fuel clad and reactor pressure vessel. Atoms in irradiated material transform to primary knock-on atoms (PKAs) by absorbing the kinetic energy transferred from neutrons, and the energy released from nuclear reactions. The secondary collision cascades which are induced by PKAs create point defects within the material, with residual vacancies and interstitials eventually causing swelling and embrittlement that degrades mechanical behavior. For a long time, Displacements per Atom (DPA) index has been identified as a measure of radiation damage in material. Nowadays, several advanced methods, such as Molecular Dynamics (MD) and Kinetic Monte Carlo (KMC) simulations, have been developed for more accurately simulating the evolution of the damage. However, all of these techniques need more comprehensive information of PKA, such as the type, energy, direction and spatial distribution. The limitations of DPA emerge and a method should be provided to simulate the generative process of PKAs. Recently, a deterministic analysis code SPECTRA-PKA has been developed by Gilbert to calculate the energy spectra of almost all types PKAs by solving the group-to-group cross-section matrices equation which includes neutron scattering, light charged particles, and recoils of the residual nuclei. But this deterministic analysis code could not give the direction, spatial and time distribution of PKAs. Based on the Geant4 program, Cui Zhenguo has simulated the irradiation by neutrons with 1 MeV energy in zirconium, while only the two adjacent elastic collisions between injected neutron and target atoms are taken into consideration. In this paper, Monte Carlo method to calculate PKAs information during neutron transport in RMC code is introduced. RMC is a continuous-energy Reactor Monte Carlo neutron and photon transport code being developed by Department of Engineering Physics at Tsinghua University, Beijing. PKAs in zirconium are calculated in fixed neutron source mode. Statistical information of PKAs in PWR fuel cell and SFR fuel cell is shown and compared. The results show that Monte Carlo method can provide more comprehensive information of PKAs. (authors)

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Phase-field modeling of radiation-induced segregation for multicomponent alloys

Structural alloys under irradiation are known to undergo radiation-induced solute redistribution (RIS) at grain boundaries, leading to detrimental effects such as intergranular corrosion and stress-assisted cracking. To better understand the phenomenon, improved models of RIS applicable to concentrated, multicomponent alloys, and mesoscale microstructures are needed. In this talk, we present a novel grand-potential-based phase-field model to account for the complete set of multicomponent kinetic and thermodynamic couplings between atoms and point defects in the Onsager transport equations. We demonstrate multiscale modeling capability by deriving the Onsager coefficient matrix from atomistic-based Kinetic Monte Carlo simulations. Model predictions and validations of RIS and the effect of defect production, grain boundary sink strength and density are demonstrated for a model FCC FeCrNi system. We also demonstrate the novel capability to describe RIS in the presence of equilibrium segregation described using a density-based CALPHAD thermodynamic framework. This modeling approach overcomes certain limitations in conventional RIS models and provides a step closer towards multiscale modeling.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Mesoscale Modeling of Dislocation Cell Structure Evolution and Radiation-Induced Segregation in Additively Manufactured Austenitic Stainless Steel

Structural alloys under irradiation develop radiation-induced segregation (RIS) at point defect sinks, which lead to undesired changes in the alloy's properties. Additively manufactured austenitic stainless steels are expected to yield a distinct response to irradiation damage owing to their unique as-printed dislocation cell structure. In this talk, we present the development of a mesoscale model for dislocation cell structure evolution coupled with RIS using the MOOSE framework. The evolution of network dislocations within spatially distinct cells and cell walls are modeled using climb-mediated edge annihilation and generation processes. Starting with initial microstructures of as-printed non-equilibrium segregations at dislocation cell walls, our 2D and 3D simulations explore the effects of irradiation temperature, dose rate, dislocation sink bias, and specimen thickness on microstructure evolution. The results will be compared against experimental characterizations of in-situ and ex-situ ion-irradiated samples, and the implications of evolving cell structure on irradiation damage response will be discussed.

additive manufacturing↗
DOE OSTI2025

Phonon-Spin Scattering from Unpaired f-electrons in U atoms and It’s Influence on Thermal Transport in Uranium-doped Thorium Dioxide Single Crystals

In this work, impact of low level of uranium (U) atom substitution on thermal conductivity of thorium dioxide (ThO2) is investigated. ThO2 is an electronic insulator with a wide optical band-gap and no unpaired electrons whose thermal transport is governed by phonons. U-substitution introduces unpaired f-electrons resulting in paramagnetic behavior of U-ThO2 at room temperature, which significantly suppresses its thermal conductivity. A single crystal of U-ThO2 with graded composition of U is grown using a hydrothermal synthesis method, and thermal conductivity measurements are performed in regions with uniform composition of U at levels of 0%, 6%, 9% and 16%. Measured thermal conductivity profiles over 77–300 K temperature range are analyzed using an analytical expression for phonon-mediated thermal transport based on Klemens-Callaway model. Temperature dependent thermal conductivity is found to deviate significantly from the Rayleigh scattering trend expected for a simple substitutional point defect with a small perturbation to mass and interatomic forces. With the resonant scattering term, observed large suppression of thermal conductivity at low temperatures can be closely reproduced. Additionally, the extracted phonon-spin coupling constants imply a nonlinear relation of phonon-spin interaction intensity with respect to U doping percentage. Our study reveals how phonon-spin scattering contributed by unpaired f-electrons in U atoms influences thermal transport in the U-ThO2 system.

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Self-Learning Kinetic Monte Carlo Simulations of Radiation Damage in Nuclear Fuels

Understanding how irradiation affects the thermo-physical and mechanical properties of nuclear materials, such as thermal conductivity degradation in fuels and embrittlement of structural components, is critical to the safety and efficiency of nuclear reactors. These effects are largely governed by the formation and evolution of atomic-scale point defects and defect clusters. Due to their small sizes, however, these defects are invisible under high-resolution scanning transmission electron microscopy. This project aims to fill this experimental knowledge gap by integrating density functional theory (DFT), machine learning interatomic potential (MLIP), and kinetic Monte Carlo (KMC) techniques to predict longtime evolution of irradiation-induced defects in nuclear fuels.

36 - MATERIALS SCIENCE↗
DOE OSTI2014

Effect of point and grain boundary defects on the mechanical behavior of monolayer MoS{sub 2} under tension via atomistic simulations

Atomistic simulation is used to study the structure and energy of defects in monolayer MoS{sub 2} and the role of defects on the mechanical properties of monolayer MoS{sub 2}. First, energy minimization is used to study the structure and energy of monosulfur vacancies positioned within the bottom S layer of the MoS{sub 2} lattice, and 60° symmetric tilt grain boundaries along the zigzag and armchair directions, with comparison to experimental observations and density functional theory calculations. Second, molecular dynamics simulations are used to subject suspended defect-containing MoS{sub 2} membranes to a state of multiaxial tension. A phase transformation is observed in the defect-containing membranes, similar to prior work in the literature. For monolayer MoS{sub 2} membranes with point defects, groups of monosulfur vacancies promote stress-concentration points, allowing failure to initiate away from the center of the membrane. For monolayer MoS{sub 2} membranes with grain boundaries, failure initiates at the grain boundary and it is found that the breaking force for the membrane is independent of grain boundary energy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Point and extended defects in heteroepitaxial 𝛽−G⁡a 2 ⁢O 3 films

G⁡a 2 ⁢O 3 is emerging as an excellent potential semiconductor for high power and optoelectronic devices. However, the successful development of G⁡a 2⁢ O 3 in a wide range of applications requires a full understanding of the role and nature of its point and extended defects. Here, in this work, high quality epitaxial G⁡a 2 ⁢O 3 films were grown on sapphire substrates by metal-organic chemical vapor deposition and fully characterized in terms of structural, optical, and electrical properties. Then defects in the films were investigated by a combination of depth-resolved Doppler broadening and lifetime of positron annihilation spectroscopies and thermally stimulated emission (TSE). Positron annihilation techniques can provide information about the nature and concentration of defects in the films, while TSE reveals the energy level of defects in the bandgap. Despite very good structural properties, the films exhibit short positron diffusion length, which is an indication of high defect density and long positron lifetime, a sign for the formation of Ga vacancy related defects and large vacancy clusters. These defects act as deep and shallow traps for charge carriers as revealed from TSE, which explains the reason behind the difficulty of developing conductive G⁡a 2 ⁢O 3 films on non-native substrates. Positron lifetime measurements also show nonuniform distribution of vacancy clusters throughout the film depth. Further, the work investigates the modification of defect nature and properties through thermal treatment in various environments. It demonstrates the sensitivity of G⁡a 2 ⁢O 3 microstructures to the growth and thermal treatment environments and the significant effect of modifying defect structure on the bandgap and optical and electrical properties of G⁡a 2 ⁢O 3 .

defects↗
DOE OSTI2015

Compensation mechanism of bromine dopants in cadmium telluride single crystals

We grew single crystals of cadmium telluride, doped with bromine by the Bridgman method, annealed them under a cadmium overpressure (P Cd = 10² - 10⁵ Pa) at 800-1100 K, and investigated their electrical properties at high- and low-temperature. The influence of impurities on the crystals' electrical properties were analyzed using the defect subsystem model; the model includes the possibility of the formation of point intrinsic defects (V²⁻ Cd , Cd²⁺ i , V²⁺ Te , Te²⁻ i ), and substitutional ones (Br⁰ Te , Br⁺ Te ), as well as complexes of point defects, i.e., (Br⁺ Te V²⁻ Cd )⁻ and (2Br⁺ Te V²⁻ Cd )⁰. We established the concentration dependence between free charge carriers and the parameters of the annealing process. Here, n(T) and n(P Cd ) are determined by two dominant defects – Br⁺ Te and (2Br⁺ Te V²⁻ Cd )⁰. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not affect the electron density.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Natural formation of linear defect structures in MoS 2

Near surface defects can significantly impact the quality of metallic interconnects and other interfaces necessary to create device structures incorporating two-dimensional materials. Furthermore, the impact of such defects can strongly depend on their organization. In this study, we present scanning tunneling microscopy images and tunneling spectroscopy of point and linear defects near the surface of natural MoS 2 . The point defects share similar structural and electronic characteristics and occur with comparable frequency as subsurface sulfur vacancies observed previously on natural MoS 2 . The linear defects observed here occur less frequently than the point defects but share the same depth profile and electronic structure. These data indicate that the linear defects are actually a one-dimensional organization of subsurface sulfur vacancies. Our density functional calculations agree with this assessment in that, for sufficient local defect concentrations, it is energetically more favorable for the defects to be organized in a linear fashion rather than as clusters or even isolated single point defects. Given these measurements were taken from naturally formed MoS 2 , this organization likely occurs during crystal formation. Considering the impact of one-dimensional organization on the local properties of layered materials, and the potential for them to be introduced purposefully during crystal formation, research into the formation mechanism and properties of these defects could enable new paths for defect engineering in MoS 2 -based systems.

2D materials↗