Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “oxide interfaces”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,225 records · Page 68

Reduction of Oxidized Pd/Ag(111) Surfaces by H 2 : Sensitivity to PdO Island Size and Dispersion

Understanding the migration of species across interfaces in bimetallic systems is key to exploiting their bifunctionality for chemical reactivity and heterogeneous catalysis. The present study demonstrates that the sizes and dispersion of oxidized Pd islands present on oxidized Ag(111) in addition to the concentration of active Pd sites have a significant influence on the rate of surface reduction by H 2 . Two distinct types of Pd oxide islands were generated for this investigation and characterized using X-ray photoelectron spectroscopy and scanning tunneling microscopy. Small, uniformly-dispersed PdO x islands (1-5 nm diameter) were created by depositing Pd onto AgO x surfaces, while larger, non-uniformly dispersed PdO x agglomerates (30-50 nm) were produced by depositing Pd on Ag(111) prior to oxidizing. Based on X-ray photoelectron spectroscopy, the small PdO x islands have a higher concentration of undercoordinated Pd atoms than the large agglomerates. Both types of PdO x are found to dramatically enhance the reduction of AgO x by H 2 at 300 K due to the ability of the PdO x to dissociate H 2 ; the pure AgO x surfaces are unreactive toward H 2 . The rate of reduction at 300 K is found to be 2-4 times larger for the AgO x surface covered by small, uniformly dispersed PdO x islands. The higher reactivity of this surface is attributed to enhanced migration of oxygen and hydrogen atoms between the PdO x and AgO x phases due to the sizes and high dispersion of the small PdO islands as well as the higher concentration of active Pd sites on the PdO x . Furthermore, the results of this study demonstrate that reactant migration between co-existing surface phases is highly sensitive to both the intrinsic chemical activity and morphological properties of the active phase (PdO x ) and reveal that these properties can be significantly influenced by the method of synthesizing the oxidized bimetallic surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unusual electrical conductivity driven by localized stoichiometry modification at vertical epitaxial interfaces

Precise control of lattice mismatch accommodation and interfacial cation diffusion is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La 1-x Sr x MnO 3 (LSMO) as a prototype phase transition oxide and establish vertical epitaxial interfaces with NiO for exploring the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the dead layer problem plaguing LSMO and leads to strongly directional conductivity, as manifested by a more than three orders of magnitude difference between out-of-plane and in-plane conductivity. Comprehensive atomic scale structural characterization and transport measurements reveal that this emerging behavior is created by a compositional change produced by preferential cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electrical conductivity at vertical epitaxial interfaces and highlights the beneficial role of controllable cation diffusion that enables emerging functionalities for a broad range of potential applications such as memristors, spintronic devices, and novel nanoelectronic devices using strongly correlated materials.

36 MATERIALS SCIENCE↗

NSC 800, 8-bit CMOS microprocessor

The NSC 800 is an 8-bit CMOS microprocessor manufactured by National Semiconductor Corp., Santa Clara, California. The 8-bit microprocessor chip with 40-pad pin-terminals has eight address buffers (A8-A15), eight data address -- I/O buffers (AD(sub 0)-AD(sub 7)), six interrupt controls and sixteen timing controls with a chip clock generator and an 8-bit dynamic RAM refresh circuit. The 22 internal registers have the capability of addressing 64K bytes of memory and 256 I/O devices. The chip is fabricated on N-type (100) silicon using self-aligned polysilicon gates and local oxidation process technology. The chip interconnect consists of four levels: Aluminum, Polysi 2, Polysi 1, and P(+) and N(+) diffusions. The four levels, except for contact interface, are isolated by interlevel oxide. The chip is packaged in a 40-pin dual-in-line (DIP), side brazed, hermetically sealed, ceramic package with a metal lid. The operating voltage for the device is 5 V. It is available in three operating temperature ranges: 0 to +70 C, -40 to +85 C, and -55 to +125 C. Two devices were submitted for product evaluation by F. Stott, MTS, JPL Microprocessor Specialist. The devices were pencil-marked and photographed for identification.

Suszko, S. F.↗

EFFECT OF SURFACE CONDITION ON SPALLATION BEHAVIOR OF OXIDE SCALE ON SS 441 SUBSTRATE USED IN SOFC

As operating temperature of SOFC decreases, ferritic stainless steel has attracted a great deal of attention for its use as an interconnect in SOFCs because of its gas-tightness, low electrical resistivity, ease of fabrication, and cost-effectiveness. However, oxidation reaction of the metallic interconnects in a typical SOFC working environment is unavoidable. The growth stresses in the oxide scale and on the scale/substrate interface combined with the thermal stresses induced by thermal expansion coefficient mismatch between the oxide scale and the substrate may lead to scale delamination/buckling and eventual spallation during stack cooling, which can lead to serious cell performance degradation. Therefore, the interfacial adhesion strength between the oxide scale and substrate is crucial to the reliability and durability of the metallic interconnect in SOFC operating environments. In this paper, we investigated the effect of the surface conditions on the interfacial strength of oxide scale and SS441 substrate experimentally. Contrary to the conventional sense, it was found that rough surface of SS441 substrate will decrease the interfacial adhesive strength of the oxide scale and SS441 substrate

oxide scale spallation↗

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii)the application of oxygen-protective Eu monolayers–without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime–and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al{sub 2}O{sub 3}/AlGaN/GaN stacks

We investigate the Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor structure pretreated by O{sub 2} anneals, N{sub 2} remote plasma, and forming gas remote plasma prior to atomic layer deposition of Al{sub 2}O{sub 3} using in situ X-ray photoelectron spectroscopy, low energy electron diffraction, and capacitance- voltage measurements. Plasma pretreatments reduce the Ga-oxide/oxynitride formation and the interface state density, while inducing a threshold voltage instability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Finite element analysis of thermal barrier coatings

The near-term objective is to develop an understanding of the states of stresses and strains in a Zirconia-yttria thermal barrier coating (TBC) experiencing a given temperature drop. Results so obtained are expected to facilitate experimental work. In order to gain realistic insights into the distribution of stresses and strains in a complex TBC, the finite element approach was selected to model a cylindrical TBC specimen. Experimental evidence reported in the literature indicated the presence of rough interface between the ceramic coat and bond coat. Oxidation of the bond coat at ceramic-bond interface was observed, as was a small amount of cracking in the ceramics near the ceramic-bond interface. To account for these complex features, a plane-strain finite element computer program known as TBCOC was developed, taking advantage of a generic computer code known as MARC. This generic code was made available through the use of a supercomputer (Cray 1). The TBCOC model contains 1316 nodal points and 2140 finite elements. It is capable of a uniform isothermal loading. Results of a sample computer run are presented.

Chang, G. C.↗

High-temperature oxidation of a rapidly solidified amorphous Ta-Ir alloy

The oxidation products formed at 500 and 700 C on an amorphous Ta-44.5 at. pct Ir alloy in an Ar-0.1 percent O2 gas mixture were characterized using SEM, XRD, EPMA, TEM, STEM, AES, and XPS. Initially, a thin (3-4 nm) layer of Ta2O5 formed at the surface of the alloy. Continued growth of the Ta2O5, which occurred very rapidly, involved diffusion of oxygen anions from the Ta2O5/gas interface to the alloy/Ta2O5 interface, where tantalum was selectively oxidized. Because the oxide grew more quickly than iridium could diffuse back into the alloy, the iridium coalesced into platelets of crystalline iridium-rich alloy that were oriented approximately parallel to the oxide/alloy interface, and which became embedded in a matrix of Ta2O5. The unoxidized core remained in the glassy state. The oxidation process and/or the dissolution of oxygen into the unoxidized alloy caused the alloy to become embrittled.

Cotell, Catherine M.↗

The Role of Oxygen Transfer in Oxide Heterostructures on Functional Properties

A variety of mechanisms are reported to play critical roles in contributing to the high carrier/electron mobility in oxide/SrTiO 3 (STO) heterostructures. By using La 0.95 Sr 0.05 TiO 3 (LSTO) epitaxially grown on different single crystal substrates (such as STO, GdScO 3 , LaAlO 3 , (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 , and CeO 2 buffered STO) as the model systems, the formation of a conducting substrate surface layer (CSSL) on STO substrate is shown at relatively low growth temperature and high oxygen pressure (725 °C, 5 × 10 –4 Torr), which contributes to the enhanced conductivity of the LSTO/STO heterostructures. Different from the conventional oxygen vacancy model, this work reveals that the formation of the CSSL occurs when growing an oxide layer (LSTO in this case) on STO, while neither annealing nor the growth of an Au layer alone at the exact same growth condition generates the CSSL in STO. It demonstrates that the oxide layer actively pulls oxygen from STO substrate at given growth conditions, leading to the formation of the CSSL. Here, the observations emphasize the oxygen transfer across film/substrate interface during the synthesis of oxide heterostructures playing a critical role in functional properties.

36 MATERIALS SCIENCE↗

Band offsets and electronic structures of interface between In{sub 0.5}Ga{sub 0.5}As and InP

III–V semiconductor interfacing with high-κ gate oxide is crucial for the high mobility metal-oxide-semiconductor field transistor device. With density functional theory calculations, we explored the band offsets and electronic structures of the In{sub 0.5}Ga{sub 0.5}As/InP interfaces with various interfacial bondings. Among six different bonding interfaces, we found that P-In(Ga) bonding interface showed the highest stability. Local density of states calculations was adopted to calculate the band offsets. Except for the metallic interface, we noticed that neither valence band offset nor conduction band offset depended on the interfacial bondings. For the most stable P-In(Ga) interface, we did not observe any gap states. Furthermore, we explored the P-In(Ga) interfaces with interfacial P-As exchange defects, which slightly modified the interface stability and the band offsets but did not produce any gap states. These findings provide solid evidence that InP could serve as a promising interfacial passivation layer between III–V material and high-κ oxide in the application of high mobility devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε r ~ 22) amorphous native oxide Bi 2 SeO x on the 2D semiconducting Bi2O2Se using O 2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi 2 O 2 Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi 2 O 2 Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

36 MATERIALS SCIENCE↗

Building interface bonding and shield for stable Li-rich Mn-based oxide cathode

Implementation of Li-rich Mn-based oxide cathode with high-energy-density has been restrained by capacity/voltage degradation that results from irreversible lattice oxygen loss and structure rearrangements. To resolve these challenges, in this work, Li 1.2 Mn 0.54 Ni 0.13 Co 0.13 O 2 encapsulated by amorphous Co x B (CB-LRM) is rationally designed via autocatalytic plating for highly reversible cationic/anionic hybrid cathode material. Band coherency is ingeniously evoked by interface-reconstruction between bulk structure and amorphous coating layer, which lower the energy of O $2p$ states. Furthermore, this is associated with strengthened orbital hybridization of O $2p$-Mn $3d$ and increased formation energy of oxygen vacancy, which mitigates the lattice oxygen loss considerably. Additionally, interface shielding effects that protect electrode against electrolyte corrosion and the reduction of surface oxygen are also present with fully coverage of amorphous Co x B coating layer. As a result, the as-designed CBLRM cathode exhibits excellent cycle stability after 100 loops with only 0.154% per cycle capacity fade and improved voltage degradation. Given this, this work provides a potential avenue for rational design of lattice oxygen-based electrode materials with high-energy-density.

25 ENERGY STORAGE↗

Thermal Testing of High Performance: Thermal Barrier Coatings for Turbine Blades

A 350 micron thick 7 wt.% Y 2 O 3 -ZrO 2 (7YSZ) ceramic Thermal Barrier Coating (TBC) was manufactured in an argon atmosphere and with a strictly controlled substrate temperature on flat IN 600 samples and on IN 100 aircraft turbine blades. This new atmosphere and temperature controlled spraying (ATCS) allows the reduction of the residual stresses and an improvement in the microstructure and in the mechanical properties of the coating. The good performance of these new TBC's was assessed in thermal fatigue and in thermal shock tests carried out in air at 1100°C and at 1280°C respectively. The oxidation rate of the metal-ceramic interface was measured at 1100°C. Failure of the TBC's was induced only by the deterioration (like oxidation, cracking, ...) of the uncoated parts of the samples, as testing temperature was too severe for the base metals. Spalling was thereafter driven by compressive stresses near the aluminum oxide layer at the metal-ceramic interface. The results of these tests underline the good quality of the ceramic coating manufactured by the new ATCS technology.

L Bertamini↗

Positron annihilation studies of the AlO{sub x}/SiO{sub 2}/Si interface in solar cell structures

Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO{sub x} films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO{sub x} films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO{sub x}/SiO{sub x}/Si interface with positron trapping and annihilation occurring in the Si side of the SiO{sub x}/Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 {+-} 2%) before annealing which is increased to 47 {+-} 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO{sub x} interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO{sub 2} layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

36 MATERIALS SCIENCE↗

An ultrastable heterostructured oxide catalyst based on high-entropy materials: A new strategy toward catalyst stabilization via synergistic interfacial interaction

Designing high–performance catalysts that can stabilize catalytic active sites against sintering to deactivation at temperature higher than 900°C is significant but challenging. In this work, we report a new strategy to obtain a transition metal oxide catalyst with high temperature stability for CO oxidation. This is achieved through a synergistic interfacial interaction at the interface of a heterostructure between high– entropy oxides (HEO, high temperature stability) and CuCeO x (catalytic site). The catalytic site (CuCeO x ) for CO oxidation is realized by dissolving an amount of Cu species in HEO into CeO 2 via an entropy–driven mechanochemical process. In situ XRD and HAADF–STEM have confirmed the high temperature stability of the heterostructure CuCeO x –HEO, which can remain its CO oxidation catalytic activity at elevated temperatures. It should be expected that this innovative will offer the potential to the synthesis of catalysts with high temperature stability in industry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tunnel injection into gate oxide traps

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.

Maserjian, J.↗

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

The Al{sub 2}O{sub 3}/GaAs and HfO{sub 2}/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend on the dielectric material and the exposure temperature. Comparisons with previous studies show that ex situ characterization can result in misleading conclusions about the interface reactions occurring during the metal oxide deposition process.

36 MATERIALS SCIENCE↗