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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

A Newton-Raphson Method Approach to Adjusting Multi-Source Solar Simulators

NASA Glenn Research Center has been using an in house designed X25 based multi-source solar simulator since 2003. The simulator is set up for triple junction solar cells prior to measurements b y adjusting the three sources to produce the correct short circuit current, lsc, in each of three AM0 calibrated sub-cells. The past practice has been to adjust one source on one sub-cell at a time, iterating until all the sub-cells have the calibrated Isc. The new approach is to create a matrix of measured lsc for small source changes on each sub-cell. A matrix, A, is produced. This is normalized to unit changes in the sources so that Ax(delta)s = (delta)isc. This matrix can now be inverted and used with the known Isc differences from the AM0 calibrated values to indicate changes in the source settings, (delta)s = A ·'x.(delta)isc This approach is still an iterative one, but all sources are changed during each iteration step. It typically takes four to six steps to converge on the calibrated lsc values. Even though the source lamps may degrade over time, the initial matrix evaluation i s not performed each time, since measurement matrix needs to be only approximate. Because an iterative approach is used the method will still continue to be valid. This method may become more important as state-of-the-art solar cell junction responses overlap the sources of the simulator. Also, as the number of cell junctions and sources increase, this method should remain applicable.

Snyder, David B.↗
NASA NTRSDate not supplied

Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells

We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.

Ryan D Hool↗
NASA NTRSDate not supplied

Measurements and Computations of the Turbulent Corner Flow on the NASA Juncture-Flow Model with a Symmetric Wing

The NASA Juncture Flow experiment is designed to acquire high-quality flowfield data deep in the corner of a wing-fuselage junction specifically for the purpose of computational fluid dynamics (CFD) validation and turbulence model improvement. This paper presents and discusses the results of a recent experiment with the juncture-flow model in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The main objective of the test was to expand the existing juncture-flow dataset with a symmetric wing case that displays fully attached, incipient separation, and separated flow in the corner of the wing-fuselage junction, depending on the model angle of incidence. Laser Doppler velocimetry (LDV) measurements were made at three model angles of incidence (0 deg: fully attached, 1 deg: incipient separation, and 5 deg: separated flow) and for each one, mean-flow and Reynolds-stress data were obtained on the fuselage and at several streamwise locations along the corner of the wing-fuselage junction. Supporting measurements were made during the test campaign and included model and tunnel wall static pressures, tunnel wall and ceiling boundary-layer rake data, oil-flow visualizations, and laser-based measurements of the as-built model geometry and model position in the test section. Comparisons between the experimental data on the test article and Reynolds-averaged Navier-Stokes CFD results are presented and discussed.

Juncture Flow↗
NASA NTRS2023

Measurements and Computations of the Turbulent Corner Flow on the NASA Juncture-Flow Model with a Symmetric Wing

The NASA Juncture Flow experiment is designed to acquire high-quality flowfield data deep in the corner of a wing-fuselage junction specifically for the purpose of computational fluid dynamics (CFD) validation and turbulence model improvement. This paper will present and discuss the results of a recent experiment with the juncture-flow model in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The main objective of that test was to expand the existing juncture-flow dataset with a symmetric wing case that displays fully attached, incipient separation, and separated flow in the corner of the wing-fuselage junction, depending on the model pitch angle. Laser Doppler velocimetry (LDV) measurements were made at three model pitch angles (0 deg: fully attached, 1 deg: incipient separation, and 5 deg: separated flow) and for each one, mean-flow and Reynolds-stress data was obtained on the fuselage and at several streamwise locations along the corner of the wing-fuselage junction. Supporting measurements were made during the test campaign and included model and tunnel wall static pressures, tunnel wall and ceiling boundary-layer rake data, oil-flow visualizations, and laser-based measurements of the as-built model geometry and model position in the test section. Comparisons between the experimental data and Reynolds averaged Navier-Stokes CFD results will also be presented and discussed.

Juncture Flow↗
NASA NTRSDate not supplied

Measurements and Computations of the Turbulent Corner Flow on the NASA Juncture-Flow Model with a Symmetric Wing

The NASA Juncture Flow experiment is designed to acquire high-quality flowfield data deep in the corner of a wing-fuselage junction specifically for the purpose of computational fluid dynamics (CFD) validation and turbulence model improvement. This paper will present and discuss the results of a recent experiment with the juncture-flow model in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The main objective of that test was to expand the existing juncture-flow dataset with a symmetric wing case that displays fully attached, incipient separation, and separated flow in the corner of the wing-fuselage junction, depending on the model pitch angle. Laser Doppler velocimetry (LDV) measurements were made at three model pitch angles (0 deg: fully attached, 1 deg: incipient separation, and 5 deg: separated flow) and for each one, mean-flow and Reynolds-stress data was obtained on the fuselage and at several streamwise locations along the corner of the wing-fuselage junction. Supporting measurements were made during the test campaign and included model and tunnel wall static pressures, tunnel wall and ceiling boundary-layer rake data, oil-flow visualizations, and laser-based measurements of the as-built model geometry and model position in the test section. Comparisons between the experimental data and Reynolds averaged Navier-Stokes CFD results will also be presented and discussed.

Juncture Flow↗
NASA NTRS2024

Measurements and Computational Analysis of the Turbulent Corner Flow on the NASA Juncture-Flow Model with a Symmetric Wing

The NASA Juncture Flow Experiment is designed to acquire high-quality flowfield data deep in the corner of a wing-fuselage junction for the purpose of computational fluid dynamics (CFD) validation and turbulence model improvement. This report presents and discusses the results of a recent experiment with the Juncture Flow Model in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The main objective of the test was to expand the existing juncture-flow dataset with a symmetric wing case that displays fully attached, incipient separation, and separated flow in the corner of the wing-fuselage junction, depending on the model angle of incidence. Laser Doppler velocimetry (LDV) measurements were made at three model angles of incidence (0° : fully attached, 1° : incipient separation, and 5° : separated flow) and for each angle, mean-flow and Reynolds-stress data were obtained on the fuselage and at several locations along the corner of the wing-fuselage junction. Supporting measurements were made during the test campaign and include model and tunnel wall static pressures, tunnel wall boundary-layer profiles, oil-flow visualizations, and laser-based measurements of the as-built model geometry and model position in the test section. A companion set of Reynolds-averaged Navier-Stokes (RANS) CFD simulations were also performed and those results were used to support the discussion of the experimental test results.

Juncture Flow↗
NASA NTRSDate not supplied

Technology Assessment and Modelling of Three Terminal Tandem Solar Cells for In-Space Utilization

NASA seeks a sustained human presence on the lunar surface. High-efficiency and resilient energy systems are critical to supporting habitats, scientific outposts, and lunar surface operations. Photovoltaics have long been the backbone of space power systems, transitioning from silicon solar cells to multi-junction III-V solar cells, which now dominate state-of-the-art (SOA) technology. Multi-junction cells achieve high efficiency by layering semiconductors, each absorbing a specific portion of the solar spectrum. However, efficiency gains are increasingly constrained by device physics and manufacturing complexity. Additionally, higher-order junctions pose challenges for accurate modelling and performance characterization due to difficulties in replicating the AM0 spectrum.

solar cells↗
DOE OSTI2022

Porous membrane enabled mass spectrometry characterization of microfluidic devices

A system for sampling a liquid includes a sample fluid conduit including a membrane having pores. The membrane prevents the passage of the sample liquid through the pores at a first pressure of the sample liquid in the sample fluid conduit. A surface sampling capture probe has a distal end. The capture probe includes a solvent supply conduit and a solvent exhaust conduit. A solvent composition flowing at the distal end of the capture probe establishes a liquid junction with the membrane and establishes a second pressure within the liquid junction at the membrane. The second pressure is lower than the first pressure. Sample liquid will be drawn through the pores of the membrane by the second pressure at the liquid junction. A method for sampling a liquid and for performing chemical analysis on a liquid are also disclosed.

Cahill, John F.↗
DOE OSTI2022

Thermoelectric coatings for waste heat recovery and photo-thermal power

An energy harvesting system for collecting energy from sources of thermal energy that exist in the environment and convert the energy to electricity. The system has N-P junctions mounted on the outer surface of a conduit, pipe or flue. A hot medium flows through the conduit, pipe or flue. The p-n junctions operate as thermoelectric power generators. Heat absorbed at the p-n junctions increases the kinetic energy of charge carriers causing migration of the charge carriers. This thermally-driven migration of charge carriers is used to drive an electrical current in an external circuit.

Farmer, Joseph C.↗
DOE OSTI2022

Systems and methods for superconducting quantum refrigeration

A heat transfer device and method are disclosed. The device includes a working region (i.e., working substance) made from a first superconducting material having a superconducting state and a normal state when magnetized. The first superconducting material has a first energy gap while in the superconducting state. A substrate (i.e., cold reservoir) is connected to the working region at a first tunnel junction. The substrate may be a metallic substrate. A heat sink (i.e., hot reservoir) is connected to the working region at a second tunnel junction. The heat sink is made from a second superconducting material having a second energy gap that is larger than the first energy gap. In a particular example, the heat transfer device includes a metallic substrate is made from Copper, a working region made from Tantalum, a heat sink made from Niobium, and the first and second tunnel junctions are made from Tantalum Oxide.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Suppression of quasiparticle poisoning in transmon qubits by gap engineering

The performance of various superconducting devices operating at ultra-low temperatures is impaired by the presence of non-equilibrium quasiparticles. Inelastic quasiparticle (QP) tunneling across Josephson junctions in superconducting qubits results in decoherence and spurious excitations and, notably, can trigger correlated errors that severely impede quantum error correction. In this work, we use "gap engineering" to suppress the tunneling of low-energy quasiparticles in Al-based transmon qubits, a leading building block for superconducting quantum processors. By implementing potential barriers for QP, we strongly suppress QP tunneling across the junction and preserve charge parity for over $10^3$ seconds. The suppression of QP tunneling also results in a reduction in the qubit energy relaxation rates. The demonstrated approach to gap engineering can be easily implemented in all Al-based circuits with Josephson junctions.

Kamenov, Plamen↗
DOE OSTI2024

Porous membrane enabled mass spectrometry characterization of microfluidic devices

A system for sampling a liquid includes a sample fluid conduit including a membrane having pores. The membrane prevents the passage of the sample liquid through the pores at a first pressure of the sample liquid in the sample fluid conduit. A surface sampling capture probe has a distal end. The capture probe includes a solvent supply conduit and a solvent exhaust conduit. A solvent composition flowing at the distal end of the capture probe establishes a liquid junction with the membrane and establishes a second pressure within the liquid junction at the membrane. The second pressure is lower than the first pressure. Sample liquid will be drawn through the pores of the membrane by the second pressure at the liquid junction. A method for sampling a liquid and for performing chemical analysis on a liquid are also disclosed.

Cahill, John F.↗
DOE OSTI2025

Thermal Optimization and Experimental Demonstration of a Silicon Carbide, Half-Bridge Power Module

This paper describes modeling and experimental work to design and demonstrate a silicon carbide (SiC), single-side-cooled power module. Two SiC metal-oxide-semiconductor field-effect transistors (MOSFET) were used for each switch position and packaged on a metalized ceramic substrate. Thermal modeling was first conducted to optimize the module packaging to minimize junction-to-fluid thermal resistance and device temperature variations. This procedure identified the optimal device placement and baseplate thickness to maximize thermal performance. A heat exchanger - incorporating impinging jets of water-ethylene glycol - was designed to cool the module's baseplate to minimize thermal resistance and pumping power. The heat exchanger used relatively low fluid velocities (<1.5 m/s) to minimize erosion-corrosion effects and relatively large fluid channel sizes (>=1 mm) to prevent clogging. The power module concept was fabricated, and experiments were conducted to measure its thermal performance. Direct current was used to power the module devices, and junction temperatures were measured via device temperature-sensitive parameters. The experimental results were found to be in good agreement with model predictions (within 2%) and yielded junction-to-fluid thermal resistance values as low as about 15 mm2 K/W at relatively low pumping power values. The results demonstrate the improved performance associated with jet impingement cooling and represent an improvement over existing channel-flow-type cold plates, which can enable improvements to power density and reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Exogenous Enzymes Influenced Eimeria-Induced Changes in Cecal Fermentation Profile and Gene Expression of Nutrient Transporters in Broiler Chickens

Two 21-day experiments were conducted to investigate the effects of exogenous enzymes on growth performance, tight junctions, and nutrient transporters, jejunal oligosaccharides and cecal short-chain fatty acids (SCFA) of broiler chickens challenged with mixed Eimeria. Two different basal diets: high fiber-adequate protein (HFAP; Expt. 1) or low fiber-low protein (LFLP; Expt. 2) were used in the two experiments. In each experiment, birds were allocated to four treatments in a 2 × 2 factorial arrangement (with or without protease and xylanase combination; with or without Eimeria challenge). In Expt. 1, with HFAP diets, Eimeria upregulated (p < 0.05) the expression of claudin-1, but downregulated (p < 0.05) glucose transporters GLUT2/GLUT5. On the contrary, enzymes downregulated (p < 0.05) claudin-1 and alleviated the Eimeria-depressed GLUT2/GLUT5 expression. In both experiments, Eimeria decreased (p < 0.05) cecal saccharolytic SCFA and increased (p < 0.05) cecal branched-chain fatty acids. The challenge × enzyme interaction (p < 0.05) showed that enzymes reversed the Eimeria effects on fermentation pattern shift. In conclusion, Eimeria altered tight junctions and nutrient transporters expression promoted cecal proteolytic fermentation and inhibited saccharolytic fermentation. Exogenous enzymes showed the potential of alleviating the Eimeria-induced intestinal gene expression changes and reversing the unfavorable cecal fermentation pattern.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Challenging conventional assumptions in PV: a high-throughput open-air approach to low-cost perovskite module production

Perovskite solar modules (PSMs) offer a promising pathway to low-cost photovoltaics, yet their commercialization is challenged by manufacturing scalability, device uniformity, additive costs, interlayer complexity, and module stability. This study introduces a comprehensive technoeconomic analysis of single junction PSM's and projections for tandem perovskite-Si modules that integrate all materials and manufacturing steps, module performances, projected lifetimes, and manufacturing costs across scales. Here, we highlight an open-air manufacturing approach to fabricate all active layers of serially interconnected PSMs, including electrodes and charge transport layers, enabling high-throughput production without inert or vacuum environments. The analysis reveals two orders of magnitude throughput enhancement and cost reductions of 24% in all-open-air production, escalating to over 60% at 1 GW factory capacity compared to conventional methods. Levelized cost of energy (LCOE) projections for utility-scale installations over 30 years, accounting for module replacement and recycling, demonstrate the potential to achieve the 2030 US target of $0.03 per kWh with realistic 7–11-year PSM lifetimes, outperforming incumbent silicon-based modules. Neither four terminal (4T) nor two terminal (2T) tandem-Si PSMs improve over single junction perovskite or silicon LCOE regardless of higher efficiencies at any modeled lifetime. Addressing PSM technical challenges with a cost-modeling framework guides commercialization efforts and provides a convincing pathway for challenging incumbent Si-based PV.

14 SOLAR ENERGY↗
DOE OSTI2022

A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current

We present a unified thermionic emission (TE) and thermionic-field emission (TFE) model for the ideal reverse-bias leakage current in Schottky junctions. The unified TE–TFE analytical model advances upon previous analytical TFE models by Murphy–Good and Padovani–Stratton, which are the two most widely adopted models by the community, in two major aspects: (i) the applicability of the TFE expression therein is extended to near-zero surface electric fields by an error-function correction, allowing for the calculation of the total current by a nontrivial sum of TE (over-the-barrier current) and TFE (below-the-barrier current) contributions; therefore, an accurate description of the TE-to-TFE transition region is captured analytically for the first time; (ii) image-force lowering is considered with much-simpler correction terms. Comparisons with the reference numerical model show that the unified TE–TFE model has excellent accuracy, as well as a 10 000× reduction in computation time. The unified model is further tested against experimental data from Schottky barrier diodes based on Si, 4H-SiC, GaN, and β-Ga 2 O 3 , revealing accurate extractions of barrier heights and correct descriptions of the ideal reverse leakage characteristics. With the extended applicable range, improved accuracy, and computational efficiency, the unified TE–TFE model is highly valuable for the design and analysis of devices based on Schottky junctions, as well as for potential integration in technology computer-aided design (TCAD) tools.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Reduction of efficiency droop in c -plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

We report on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different well widths (3 or 9 nm) with and without doped barriers. QW barriers were doped with the aim of reducing the internal electric field (F QW ) in the QW to increase the electron-hole overlap, therefore increasing the recombination rates and resulting in the reduction of the efficiency droop. We, indeed, observed, through biased photocurrent spectroscopy, a reduction in F QW with doped barriers, with F QW being in the same direction of the p-n junction field at zero bias as opposed to the junction field for LEDs without doped barriers. Even with the improvement in the ground state wavefunction overlap, the ground state transition rate remains low for thick QWs. Transitions through excited states were observed for both thick QW LEDs with and without doped barriers. Here, the thick QW LED without doped barriers displayed low external quantum efficiency (EQE), likely as a result of the carrier overflow due to the poor confinement of carriers in the excited states. On the other hand, for LEDs with doped barriers, the flatter band in the QW resulting from the lower F QW reduces the energy separation between the eigenstates, leading to better confinement of carriers in the excited states. With doped barriers, we demonstrated a low efficiency droop 9-nm-thick single QW LED with a peak EQE of 42% at 40 A/cm 2 and an EQE of 36% at 400 A/cm 2 .

42 ENGINEERING↗