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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Altering the orientation of a fused protein to the RNA-binding ribosomal protein L7Ae and its derivatives through circular permutation

RNA-protein complexes (RNPs) are useful for constructing functional nano-objects because a variety of functional proteins can be displayed on a designed RNA scaffold. Here, we report circular permutations of an RNA-binding protein L7Ae based on the three-dimensional structure information to alter the orientation of the displayed proteins on the RNA scaffold. An electrophoretic mobility shift assay and atomic force microscopy (AFM) analysis revealed that most of the designed circular permutants formed an RNP nano-object. Moreover, the alteration of the enhanced green fluorescent protein (EGFP) orientation was confirmed with AFM by employing EGFP on the L7Ae permutant on the RNA. The results demonstrate that targeted fine-tuning of the stereo-specific fixation of a protein on a protein-binding RNA is feasible by using the circular permutation technique.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2012

Nano structuring of GaAs(100) surface using low energy ion irradiation

Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar{sup +} ion beam in a wide angular range of 0 deg. to 60 deg. with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.

36 MATERIALS SCIENCE↗
DOE OSTI2013

High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

High transition temperature superconductor (HTc)/SrTiO{sub 3} (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (λ ∼ 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (∼5 × 10{sup −5} defects/μm{sup 2}). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Temperature dependent structural, optical and hydrophobic properties of sputtered deposited HfO{sub 2} films

Hafnium oxide being high-k dielectric has been successfully utilized in electronic and optical applications. Being thermodynamically stable and having good mechanical strength, it can be used as a protective coating for outdoor HV insulators which are suffering from surface flashover problem due to contamination. In this paper, we are investigating the effect of substrate temperature on structural, optical and hydrophobic properties of hafnium oxide coating deposited over glass insulators by DC magnetron sputtering. X-ray diffraction is applied to determine the crystalline phase and crystallite size of the film. The morphology of the samples is examined using atomic force microscopy. The optical properties are studied using UV-vis-NIR spectrophotometer. The wettability of the film is investigated using contact angle meter. The thickness is measured using surface profilometer and verified through optical data. The relationship between substrate temperature with grain size, roughness, refractive index, and hydrophobicity is manifested. The maximum contact angle for HfO{sub 2} film was found to be 106° at 400°C.

36 MATERIALS SCIENCE↗
DOE OSTI2013

MoS{sub 2} nanotube exfoliation as new synthesis pathway to molybdenum blue

Graphical abstract: . Display Omitted Highlights: ► New synthesis approach to obtaining molybdenum blue via exfoliated MoS{sub 2} nanotubes. ► Material is prone to self assembly and is stable in high vacuum. ► Molecules are as small as 2 nm and their clusters are up to tens of nanometers. ► Change in absorption and oxidation states from the precursor MoS{sub 2}. -- Abstract: Molybdenum blue-type materials are usually obtained by partially reducing Mo{sup VI+} in acidic solutions, while in the presented method it is formed in ethanol solution of exfoliated MoS{sub 2} nanotubes, where the MoS{sub 2} flakes are the preferential location for their growth. Material was investigated by means of scanning electron and atomic force microscopy, showing the structure and self assembly, while also confirming that it is stable in high vacuum with molecules as small as 1.6 nm and the agglomerates of few tens of nanometres. The ultraviolet–visible and photoelectron spectrometry show the change in absorption properties and oxidation states from MoS{sub 2} structure to molybdenum blue, while the presence of sulphur suggests that this is a new type of molybdenum blue material.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Composition gradient effects on strain relaxation in Sr-doped LaMnO{sub 3} epitaxial thin films

The authors report on a novel method to fabricate Sr-doped composition gradient epitaxial La{sub 1−x}Sr{sub x}MnO{sub 3} thin films by radio frequency magnetron sputtering. Biaxially strained epitaxial La{sub 1−x}Sr{sub x}MnO{sub 3} thin films were grown on (001) LaAlO{sub 3} substrates by following a cosputtering procedure from LaMnO{sub 3} and La{sub 0.67}Sr{sub 0.33}MnO{sub 3} targets. Three depositions were conducted by varying the substrate temperature (750 and 850 °C) and controlling the relative deposition rate from the two targets by varying their power rate during sputtering. The thickness of the thin films was about 20 and 30 nm for the short and long duration deposition, respectively. The films were studied by symmetric θ–2θ x-ray diffraction, pole figure analysis, atomic force microscopy, and x-ray photoelectron spectroscopy. Fabrication of smooth, composition gradient films of high epitaxial quality was achieved at a substrate temperature of 850 °C and low sputtering rate. A novel strain relaxation mechanism is also found that decreases significantly the mismatch between the film and substrate as the Sr doping level increases. The reported deposition procedure can produce new possibilities of designing nanoscale structures with cross coupled properties that may result in new materials.

42 ENGINEERING↗
DOE OSTI2018

Growth from Solution, Structure, and Optical Properties of Single-Crystal para-Quaterphenyl Films

Samples of single-crystal para-quaterphenyl films up to 8 mm long and 50 μm thick have been obtained for the first time by the solvent‒antisolvent growth method. The films have been grown both on the liquid–air interface and in the solution bulk. The morphology, surface quality, and thickness of crystal films have been investigated by the optical, laser confocal, and atomic force microscopies. The structure of the para-quaterphenyl single crystal at room temperature has been refined by X-ray diffraction analysis. The formation and growth mechanisms of crystal films on the liquid–air interface have been discussed. The opticalabsorption and photoluminescence spectra of the solutions and crystal samples have been investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D₀=0.53(×2.1±1) cm² s⁻¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Epitaxial low-temperature growth of In{sub 0.5}Ga{sub 0.5}As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

A complex investigation of epitaxial In{sub 0.5}Ga{sub 0.5}As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In{sub 0.5}Ga{sub 0.5}As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In{sub 0.5}Ga{sub 0.5}As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of nano particle sizes on the third-order optical non-linearities and nanostructure of copolymer P3HT:PCBM thin film for organic photovoltaics

Highlights: • Active layer (P3HT:PCBM) has been deposited on substrate type by spin coating at 1000 rpm. • The device was completed by evaporating a 60 nm thick, circular gold electrodes onto the P3HT:PCBM. • Nonlinear refractive indices of the three particle sizes are found to be of the order of 10{sup −7} cm{sup 2}/W - Abstract: Organic solar cells are based on (3-hexylthiophene):[6,6]-phenyl C61-butyric acid with methyl ester Bulk Heterojunction. An inverted structure has been fabricated using nano-anatase crystalline titanium dioxide, as the electron transport layer, which was prepared on either the Indium Tin Oxide coated glass (ITO—glass), or Silicon wafer, as well as on glass substrates by the sol–gel method, at different spin speed, using the spin-coating system. The effect of thickness on the surface morphology and on the optical properties of TiO{sub 2} layer, was investigated using the Atomic Force Microscopy (AFM), X-ray diffraction, and UV–visible spectrophotometer. The samples were examined to feature currents and voltages, in the darkness and light extraction efficiency of the solar cell. The highest open-circuit voltage, V{sub oc}, and power conversion efficiency were 0.66% and 0.39%, fabricated with 90 nm, respectively. The non-linear optical properties of nano-anatase TiO{sub 2} sol–gel, were investigated at different particle sizes, using the z-scan technique.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Structural and electrical properties of K{sub 3}Li{sub 2}Nb{sub 5}O{sub 15} thin film grown by pulsed laser deposition

Highlights: • (001)KLN tetragonal tungsten bronze thin film has been successfully deposited on MgO substrate using PLD. • Smooth and droplets-free surface has been obtained as evidenced by RHEED and AFM. • Impedance spectroscopy shows Debye type dielectric relaxation. • The ferroelectric character of the obtained (001)KLN film has been evidenced using capacitance voltage measurement. - Abstract: Potassium lithium niobate K{sub 3}Li{sub 2}Nb{sub 5}O{sub 15} (KLN) with tetragonal tungsten bronze-type structure (TTB) thin film was successfully deposited on MgO substrate by pulsed laser ablation method. The substrate was coated by a perovskite conductive layer of La{sub 0.5}Sr{sub 0.5}CoO{sub 3}. X-ray diffraction revealed (001) orientation with low mosaicity. The oriented film had smooth and droplets-free surface as evidenced by reflection high electron energy diffraction and atomic force microscopy. Using Pt top electrode, dielectric measurements indicated stable dielectric permittivity of about 400 up to 10{sup 5} Hz. A dielectric relaxation was also observed. Moreover, the capacitance voltage measurements of the obtained (001)KLN film show ferroelectric behavior. Our results provide useful insights into the growth of tetragonal tungsten and other complex materials. These results will be useful for the growth and integration of epitaxial TTB thin films on perovskite and Si substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Infrared characteristics of VO{sub 2} thin films for smart window and laser protection applications

Vanadium dioxide (VO{sub 2}) films with a low semiconductor-to-metal transition temperature of 45 Degree-Sign C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO{sub 2} grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO{sub 2} film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO{sub 2} thin film is a promising material for the application in related fields.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

The influence of substrate temperature on the structural and optical properties of ZnS thin films

Thin films of ZnS were deposited on soda lime glass substrates by a modified close-space sublimation technique. The change in optical and structural properties of the films deposited at various substrate temperatures (150-450 Degree-Sign C) was investigated. X-ray diffraction spectra showed that films were polycrystalline in nature having cubic structure oriented only along (111) plan. The crystallinity of films increased with the substrate temperature up to 250 Degree-Sign C. However, crystallinity decreased with further increase of substrate temperature and films became amorphous at 450 Degree-Sign C. The atomic force microscopy data revealed that the films become more uniform and dense with the increase of substrate temperature. Optical properties of the films were determined from the transmittance data using Swanepoel model. It was observed that the energy band gap is increased from 3.52 to 3.65 eV and refractive index of the films are decreased with the increase of substrate temperature. Moreover, considerable improvement in blue response of the films was noticed with increasing substrate temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

36 MATERIALS SCIENCE↗