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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Probing elemental diffusion and radiation tolerance of perovskite solar cells via non-destructive Rutherford backscattering spectrometry

Mixed organic–inorganic halide perovskite-based solar cells have attracted interest in recent years due to their potential for both terrestrial and space applications. Analysis of interfaces is critical to predicting device behavior and optimizing device architectures. Most advanced tools to study buried interfaces are destructive in nature and can induce further degradation. Ion beam techniques, such as Rutherford backscattering spectrometry (RBS), is a useful non-destructive method to probe an elemental depth profile of multilayered perovskite solar cells (PSCs) as well as to study the inter-diffusion of various elemental species across interfaces. Additionally, PSCs are becoming viable candidates for space photovoltaic applications, and it is critical to investigate their radiation-induced degradation. RBS can be simultaneously utilized to analyze the radiation effects induced by He+ beam on the device, given their presence in space orbits. In the present work, a 2 MeV He+ beam was used to probe the evidence of elemental diffusion across PSC interfaces with architecture glass/ITO/SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3/spiro-OMeTAD/MoO3/Au. During the analysis, the device active area was exposed to an irradiation equivalent of up to 1.62 × 1015 He+/cm2, and yet, no measurable evidence (with a depth resolution ∼1 nm) of beam-induced ion migration was observed, implying high radiation tolerance of PSCs. On the other hand, aged PSCs exhibited indications of the movement of diverse elemental species, such as Au, Pb, In, Sn, Br, and I, in the active area of the device, which was quantified with the help of RBS.

14 SOLAR ENERGY↗
DOE OSTI2022

Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly deposited on metal tape

We develop an easily implementable yet effective process to achieve high power conversion efficiency in newly-developed flexible single-crystal-like GaAs thin-film photovoltaic solar cells on cheap metal tape. We study various techniques on the fabricated devices to passivate the defect states associated with dangling bonds at low-angle grain boundaries (LA-GBs) existing in the single-crystal-like GaAs material. We report that sulfur by trioctylphosphine sulfide (TOP:S) solution treatment can partially but effectively passivate the defect states at the LA-GBs to increase all the solar cell performance parameters of open-circuit voltage VOC (33.2%), short-circuit current JSC (19.5%), and fill factor FF (25.8%), resulting in the improvement of the power conversion efficiency more than double. The material and device characterizations and numerical modeling are performed to propose a mechanism, also suggesting that the power conversion efficiency higher than 20%, which is an important target milestone in emerging solar cell technologies, can be achieved. This work presents the first effective passivation of the bulk defects in GaAs at the device level and can also offer a solution for other photonic and electronic devices using non-single-crystalline GaAs films for flexible electronics.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗
NASA NTRS1977

Investigation of the double exponential in the current-voltage characteristics of silicon solar cells

Difficulties in relating observed current-voltage characteristics of individual silicon solar cells to their physical and material parameters were underscored by the unexpected large changes in the current-voltage characteristics telemetered back from solar cells on the ATS-1 spacecraft during their first year in synchronous orbit. Depletion region recombination was studied in cells exhibiting a clear double-exponential dark characteristic by subjecting the cells to proton irradiation. A significant change in the saturation current, an effect included in the Sah, Noyce, Shockley formulation of diode current resulting from recombination in the depletion region, was caused by the introduction of shallow levels in the depletion region by the proton irradiation. This saturation current is not attributable only to diffusion current from outside the depletion region and only its temperature dependence can clarify its origin. The current associated with the introduction of deep-lying levels did not change significantly in these experiments.

Wolf, M.↗
DOE OSTI2025

Iodine’s Wild Ride Leading to Photoinstability in Halide Perovskite Solar Cells

Understanding processes that contribute to efficiency losses during long-term operation of perovskite solar cells is crucial for achieving operational stability. Although maximum power point tracking optimizes outdoor performance, it is not uncommon that devices are kept under open-circuit conditions during sunny hours. Under these conditions, charge carriers accumulate at the interfaces rather than flowing through the circuit. In the case of the MAPbI 3 /spiro-OMeTAD interface studied here, hole accumulation leads to formation of I2 and subsequent oxidation of spiro-OMeTAD. By employing in situ absorption measurements, we show that the decrease in power conversion efficiency follows the spiro-OMeTAD oxidation while operating the device under open-circuit conditions. In short-circuit conditions, where photogenerated charge carriers are extracted in the external circuit, the I 2 -induced oxidation of spiro-OMeTAD and the device instability are minimized. The photoinduced expulsion of iodine from MAPbI 3 into spiro-OMeTAD discussed in this work provides new insight into the photoinstability of perovskite solar cells.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Advances in Mixed Tin‐Lead Narrow‐Bandgap Perovskites for Single‐Junction and All‐Perovskite Tandem Solar Cells

Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.

14 SOLAR ENERGY↗
DOE OSTI2019

Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al 0.18 Ga 0.33 In 0.49 P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

14 SOLAR ENERGY↗
NASA NTRS2004

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

Raffaelle, Ryne P.↗
DOE OSTI2022

Blade Coating Inverted Perovskite Solar Cells with Vacuum-Assisted Nucleation Based on Bottom Quasi-2D Passivation

Metal halide perovskite solar cells (PSCs) attract an enormous attention because of their high power conversion efficiency (PCE) and low fabrication cost. However, their commercialization is limited by fabricating highly efficient large-area solar cells. Controlling the morphology and crystallization of perovskite for large-area fabrication is difficult but important. Here, in this work, a vacuum-assisted approach is developed to obtain mirror-like, pinhole-free, highly crystalline, and uniform blade-coated perovskite films, without the use of antisolvent and air knife. This method can be a universal approach for various perovskite compositions. Meanwhile, the phenethylammonium iodide passivation effect at the top and bottom interfaces of perovskite layer based on FTO/NiO x /perovskite/C 60 /BCP/Cu inverted p-i-n structure is systematically investigated. The optimized device fabricated by blade coating under an ambient environment exhibits the champion PCE of 20.7% and is among the top few records of blade coating inverted structure based on NiOx hole transport layer. The encapsulated device retains 97% of its maximum efficiency under open-circuit condition after 1000 h of photostability test in an ambient environment at room temperature with a relative humidity of 40–60%. Herein, low-cost, easy, and reproducible strategies to fabricate efficient and stable blade-coated PSCs are demonstrated.

14 SOLAR ENERGY↗
NASA NTRS1985

I-V-T analysis of radiation damage in high efficiency Si solar cells

A detailed analysis of current-voltage characteristics of N(+)-P/P solar cells indicate that there is a combination of different mechanisms which results in an enhancement in the dark current and in turn deteriorates the photovoltaic performance of the solar cells after 1 MeV e(-) irradiation. The increase in the dark current is due to three effects, i.e., bulk recombination, space charge recombination by deep traps and space charge recombination through shallow traps. It is shown that the increase in bulk recombination current is about 2 to 3 orders of magnitude whereas space charge recombination current due to shallow traps increases only by an order or so and no space charge recombination through deep traps was observed after irradiation. Thus, in order to improve the radiation hardness of these devices, bulk properties should be preserved.

Banerjee, S.↗
NASA NTRS1974

The NASA program for standardizing silicon solar cells

The present work describes briefly the goals of the recently organized Standardized Space Power Systems Office and its program for developing low-cost, standard power system components for spacecraft. The first step is the development of standard specifications for solar cells and covers. These include: (1) physical dimensions, materials of construction, appearance and integrity of solar cell and coverglass; (2) electrical performance characteristics of solar cell and optical characteristics of coverglass; and (3) sampling, inspection, and electrical and environmental tests needed to demonstrate compliance with the above specifications.

Bifano, W.J.↗
NASA NTRS2007

The Extrapolation of High Altitude Solar Cell I(V) Characteristics to AM0

The high altitude aircraft method has been used at NASA GRC since the early 1960's to calibrate solar cell short circuit current, ISC, to Air Mass Zero (AMO). This method extrapolates ISC to AM0 via the Langley plot method, a logarithmic extrapolation to 0 air mass, and includes corrections for the varying Earth-Sun distance to 1.0 AU and compensating for the non-uniform ozone distribution in the atmosphere. However, other characteristics of the solar cell I(V) curve do not extrapolate in the same way. Another approach is needed to extrapolate VOC and the maximum power point (PMAX) to AM0 illumination. As part of the high altitude aircraft method, VOC and PMAX can be obtained as ISC changes during the flight. These values can then the extrapolated, sometimes interpolated, to the ISC(AM0) value. This approach should be valid as long as the shape of the solar spectra in the stratosphere does not change too much from AMO. As a feasibility check, the results are compared to AMO I(V) curves obtained using the NASA GRC X25 based multi-source simulator. This paper investigates the approach on both multi-junction solar cells and sub-cells.

Snyder, David B.↗
DOE OSTI2023

A Si-Substituted Spirobifluorene Hole-Transporting Material for Perovskite Solar Cells

Hybrid organic-inorganic perovskite solar cells (PSCs) have shown promise for next-generation photovoltaics. Here, this study presents a simple approach for enhancing the performance and stability of PSCs by substituting the center carbon atom of the common hole transport material (HTM) Spiro-MeOTAD with a silicon atom. This modification, termed Si-Spiro, results in an increased hole mobility. A density functional theory simulation indicates that the enhanced hole mobility is due to the structural change of Si-Spiro. Electron beam-induced current microscopy measurements indicate improved charged extraction at the Si-Spiro/perovskite interface. A power conversion efficiency of 22.5% is achieved in Si-Spiro-based PSCs, outperforming standard Spiro-MeOTAD. Additionally, Si-Spiro-based PSCs demonstrate enhanced stability, maintaining over 90% of performance over 120 h of one-sun operation. Depth-profiling X-ray photoelectron spectroscopy revealed that Si-Spiro effectively blocks metal ion migration, which contributes to its enhanced stability. The findings suggest that Si-Spiro could be promising a HTM for high-performing, stable PSCs.

14 SOLAR ENERGY↗
NASA NTRS1992

Arcing of negatively biased solar cells in a plasma environment. I - Experimental observations

A variety of experiments have been performed which identify key factors contributing to the arcing of negatively biased high voltage solar cells operating in a low earth orbit plasma environment. These efforts have led to a reduction of greater than a factor of 100 in the arc frequency of a single cells following proper remeditation procedures. Experiments naturally led to and focused on the adhesive/encapsulating that is used to bond the protective cover slip to the solar cell. An image-intensified CCD camera system recorded UV emission from arc events which occurred exclusively along the interfacial edge between the cover slip and the solar cell. Microscopic inspection of this interfacial region showed a bead of encapsulant along this entire edge. Elimination of this encapsulant bead reduced the arc frequency by two orders of magnitude.

Upschulte, B. L.↗
NASA NTRS1976

High altitude calibration of thirty-three silicon and gallium arsenide solar cells on a sounding rocket

Twenty-nine n/p silicon and four p/n gallium arsenide solar cells were calibrated on board a high-altitude sounding rocket which provided a stable platform outside the earth's atmosphere. Approximately 75 characteristic current-voltage curves were obtained for each of thirty-two of the cells; the calibration accuracy for both current and voltage was 0.1%. For comparison, the short circuit current, open circuit voltage, and maximum power of the solar cells were also measured under solar simulators (air mass = 0) and on the ground (air mass = 1.2).

Thomas, N. L.↗
DOE OSTI2025

Doping in Efficient Polycrystalline CdSeTe Solar Cells via AsCl 3 Vapor Annealing

Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. Here, in this study, we developed a vapor-based AsCl 3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl 3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl 3 . This approach has led to a long carrier lifetime of over 72 ns, V oc of 850 mV, and power conversion efficiency of ~18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.

14 SOLAR ENERGY↗