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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,225 records · Page 68
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Safety Related Concerns with Installation and Use of Switch-Rated Plug/Receptacle Combinations in Lieu of Metal-Enclosed Disconnect Switches

The manufacturers of Nationally Recognized Testing Laboratory (NRTL) listed, switch-rated, plug and receptacle combinations tout their convenience, reliability, efficiency, and compliance with both the National Fire Protection Association (NFPA) 70®, National Electric Code (NEC), and National Fire Protection Association 70E®, The Standard for Electrical Safety in the Workplace, as advantages to using these products in lieu of traditional metal-enclosed disconnect switches. The purpose of this paper is to raise awareness of several unintended consequences that can result when replacement involves high energy cord and plug connected equipment. This paper describes several possible issues in complying with the NFPA 70 Articles 110 and 400 and NFPA 70E Articles 110 and 130 that should be considered when using load rated plug/receptacle combinations. This paper is intended to address high energy circuits typically associated with 480 volt pin and sleeve type connections in applications where incident energy levels may exceed 1.2 calories/centimeter² (cal/cm²).

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2017

Direct Probing of Polarization Charge at Nanoscale Level

Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm -2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Switching transients in high-frequency high-power converters using power MOSFET's

The use of MOSFETs in a high-frequency high-power dc-to-dc converter is investigated. Consideration is given to the phenomena associated with the paralleling of MOSFETs and to the effect of stray circuit inductances on the converter circuit performance. Analytical relationships between various time constants during the turning-on and turning-off intervals are derived which provide estimates of plateau and peak levels during these intervals.

Sloane, T. H.↗
NASA NTRS1982

An improved switching converter model using discrete and average techniques

The nonlinear modeling and analysis of dc-dc converters has been done by averaging and discrete-sampling techniques. The averaging technique is simple, but inaccurate as the modulation frequencies approach the theoretical limit of one-half the switching frequency. The discrete technique is accurate even at high frequencies, but is very complex and cumbersome. An improved model is developed by combining the aforementioned techniques. This new model is easy to implement in circuit and state variable forms and is accurate to the theoretical limit.

Shortt, D. J.↗
NASA NTRS1992

Laser-Power Controller

New controller used in place of commercial controller. Provides precision and simplicity of digital settings, and all timing determined by digital circuits. Built-in circuit counts number of pulses in, and thereby provides control over, duration of each burst; duration set at precise value within wide range or each pulse set precisely. Controller easily adaptable to computer control: single switch used to select either manual or computer control. Another single-switch selection feature provides choice between counting of pulses in, and manual timing of, bursts.

Smith, William C.↗
NASA NTRS1992

Method and circuit for controlling the evolution time interval of a laser output pulse

The invention is a method and circuit for controlling the evolution time interval of a laser output pulse used for making precise spectral measurements. It comprises the means for pumping a laser medium in a resonator that includes a Q-switch and polarizer that act in combination to control the loss in the resonator. A photodiode senses the resulting fluorescence which is applied to a two level Q-switch and polarizer from high to intermediate to substantially zero loss states to control the evolution time interval of the resulting laser output pulse.

Barnes, Norman P.↗
NASA NTRS2003

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Elbuluk, Malik E.↗
DOE OSTI2016

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using a conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗
NASA NTRS1982

Circuit Counts Carbon Fibers

Carbon fibers are counted when they fall on high-voltage grid. An arc discharge vaporizes fiber and triggers timer. The equal-duration pulses from timer are integrated by operational amplifier, giving an output voltage that is proportional to the number of fibers incident after reset switch was opened. If two or more fibers arrive at grid simultaneously, they are vaporized one at a time; thus all of them are counted.

Yang, L. C.↗
DOE OSTI2021

Wide Dynamic Range, 10 kHz Framing Detector for 4D-STEM

Hybrid pixel array detectors (PADs) have expanded the fidelity, frame rate and dynamic range for diffractive imaging in electron microscopes. With their high detective quantum efficiencies (DQE), the noise performance limited is by counting statistics. Consequently, improving the precision and quality of high-speed images requires increasing the linear dynamic range and the maximum usable beam current. Here we describe a new prototype hybrid PAD, our next-generation electron microscope pixel array detector (NG-EMPAD) that expands both the framing speed and dynamic range of our earlier EMPAD design. Like the EMPAD, electrons are detected directly in a 500 μm thick silicon sensor bonded pixel-by-pixel to a custom signal processing integrated circuit (IC). Each pixel in the IC integrates charge carriers produced by the high-energy incident electrons. Here, in-pixel circuitry uses a combination of techniques to extend the dynamic range, including adaptive gain switching and the quantitative excess charge dumping similar to the EMPAD. In-pixel buffering of signals during readout allows acquiring a new image while reading out the previously collected image, yielding an image collection duty cycle of nearly 100%.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Generation of Tunable Stochastic Sequences Using the Insulator–Metal Transition

Probabilistic computing is a paradigm in which data are not represented by stable bits, but rather by the probability of a metastable bit to be in a particular state. The development of this technology has been hindered by the availability of hardware capable of generating stochastic and tunable sequences of “1s” and “0s”. The options are currently limited to complex CMOS circuitry and, recently, magnetic tunnel junctions. Here, we demonstrate that metal–insulator transitions can also be used for this purpose. We use an electrical pump/probe protocol and take advantage of the stochastic relaxation dynamics in VO 2 to induce random metallization events. A simple latch circuit converts the metallization sequence into a random stream of 1s and 0s. The resetting pulse in between probes decorrelates successive events, providing a true stochastic digital sequence.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2015

Methods of high current magnetic field generator for transcranial magnetic stimulation application

This paper describes the design procedures and underlying concepts of a novel High Current Magnetic Field Generator (HCMFG) with adjustable pulse width for transcranial magnetic stimulation applications. This is achieved by utilizing two different switching devices, the MOSFET and insulated gate bipolar transistor (IGBT). Results indicate that currents as high as ±1200 A can be generated with inputs of +/−20 V. Special attention to tradeoffs between field generators utilizing IGBT circuits (HCMFG{sub 1}) and MOSFET circuits (HCMFG{sub 2}) was considered. The theory of operation, design, experimental results, and electronic setup are presented and analyzed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Modified self-Kerr-nonlinearity in a four-level N-type atomic system

The self-Kerr-nonlinearity of a four-level N-type atomic system is studied both experimentally and theoretically. The self-Kerr-nonlinear coefficient n{sub 2} of the probe beam is greatly enhanced near atomic resonance, and can be dramatically modified by changing the switching laser power. With an increasing switching laser power, the slope of the Kerr nonlinear coefficient n{sub 2} around the atomic resonance changes from negative to positive, and the value of n{sub 2} varies from {approx}-4 x 10{sup -6} to 4 x 10{sup -6} cm{sup 2}/W at certain near-resonant probe frequency detunings. Such controllable Kerr nonlinearity can find applications in optoelectronic devices, such as all-optical switching and logic gates.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1972

ASDTIC duty-cycle control for power converters.

The application of analog signal to discrete interval converter (ASDTIC), a hybrid micromodule, two-loop control subsystem, to a switching, stepdown dc-to-dc converter is described. The power circuitry, interface and ASDTIC subsystems used in this switching regulator were developed to exhibit the improved regulation, transient performance, regulator stability, and freedom from the effects of variations in parts characteristics due to environmental changes and aging. The circuitry and performance characteristics of a +10-V dc switching converter as well as that of the ASDTIC micromodule are described. Realization of the ASDTIC hybrid micromodule has been accomplished with hermetically sealed, beam-lead, bonded/deposited nichrome thin film resistors, discrete capacitors, and integrated circuits on dilithic, glazed alumina substrates, using 22 feed through terminals in an integrated package.

Lalli, V. R.↗
NASA NTRS1993

Design of power electronics for TVC EMA systems

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Nelms, R. Mark↗
NASA NTRS1993

Characteristics of switching plasma in an inverse-pinch switch

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

Lee, Ja H.↗