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Electromagnetic Interference Filter Design for a 100 kW Silicon Carbide Photovoltaic Inverter Without Switching Harmonics Filter
Not provided.
The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes
Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10 11 cm –2 . This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10 7 to 3.4 × 10 9 cm –2 s –1 . Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.
Improved additive manufacturing of silicon carbide parts via pressureless electric field-assisted sintering
Not provided.
Steam oxidation of ytterbium disilicate environmental barrier coatings with and without a silicon bond coat
The current generation of multilayer Si/Yb 2 Si 2 O 7 environmental barrier coatings (EBCs) are temperature limited by the melting point of Si, 1414°C. To investigate higher temperature EBCs, the cyclic steam oxidation of EBCs comprised of a single layer of ytterbium disilicate (YbDS) was compared to multilayered Si/YbDS EBCs, both deposited on SiC substrates using atmospheric plasma spray. In this work, after 500 1-h cycles at 1300°C in 90 vol%H2O-10 vol%air with a gas velocity of 1.5 cm/s, both multilayer Si/YbDS and single layer YbDS grew thinner silica scales than bare SiC, with the single layer YbDS forming the thinnest scale. Both coatings remained fully adherent and showed no signs of delamination. Silica scales formed on the single layer coating were significantly more homogeneous and possessed a markedly lower degree of cracking compared to the multilayered EBC. The single layer EBC also was exposed at 1425°C in steam with a gas velocity of 14 cm/s in an alumina reaction tube. The EBC reduced specimen mass loss compared to bare SiC but formed an extensive 2nd phase aluminosilicate reaction product. A similar reaction product was observed to form on some regions of the bare SiC specimen and appeared to partially inhibit silica volatilization. The 1425°C steam exposures were repeated with a SiC reaction tube and no 2nd phase reaction product was observed to form on the single layer EBC or bare SiC.
Automotive Silicon Carbide Power Module Cooling With A Novel Modular Manifold And Embedded Heat Sink
The next generation of integrated power electronics packages will implement wide-bandgap devices with ultrahigh device heat fluxes. Although jet impingement has received attention for power electronics thermal management, it is not used in commercial electric vehicles (EVs) because of the associated pressure drop and reliability concerns. Here, in this paper, we present a modular thermal management system designed for automotive power electronics. The system achieves superior thermal performance to benchmarked EVs, while adhering to reliability standards and with low pumping power. The system utilizes a low-cost and lightweight plastic manifold to generate jets over an optimized heat sink, which is embedded in the direct-bonded-copper (DBC) substrate. The embedded heat sink concept leverages additive manufacturing to add elliptical pin fins to the DBC substrate. The heat sink geometry is optimized for submerged jet impingement using a unit-cell model and an exhaustive search algorithm. The model predictions are validated using unit-cell experiments. A full-scale power module model is then used to compare the DBC-embedded heat sink against direct DBC cooling and baseplate-integrated heat sinks for single-sided (SS) and double-sided (DS) cooling concepts. Using the SS and DS DBC-embedded cooling concepts, the models predict a thermal resistance that represents a reduction of 75% and 85% compared to the 2015 BMW i3, respectively, for the same water-ethylene glycol inverter flow rate. We have shown that an inverter with a 100-kilo-Watt-per-liter power density is achievable with the proposed design.
High temperature isotropic and anisotropic etching of silicon carbide using forming gas
Plasma-etched micropillars in 4H-SiC were etched in forming gas (4% H2, 96% N2) at 1500, 1550, and 1600 °C at 2.4 and 9.4 standard liters per min (slm). At 2.4 slm, oxygen from the aluminum oxide components of the tube furnace oxidized the SiC surface, and the pillars etched isotropically. Additionally, at 9.4 slm, the pillars etched crystallographically at 1500 and 1550 °C, and sharp 4H-SiC needless with tips as narrow as 15 nm were produced. The lateral etch rates of both 4H- and 6H-SiC were measured with the a-plane etching faster than the m-plane at 1500 and 1550 °C. At 1600 °C, the m-plane and a-plane etch at comparable rates. Due to the difference in etch rates between the m-plane and a-plane, convex surfaces tend to produce facets parallel to the a-plane, while concave surfaces produce facets parallel to the m-plane.
Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness
A new approach to atomic layer etching (ALE) has been demonstrated, and its application to 4H-SiC is reported here. By pulsing only the DC bias for an Ar/Cl2 inductively coupled plasma-reactive ion etching system, the etch cycle duration is reduced by more than an order of magnitude relative to conventional ALE processes. Gas flows are not changed throughout the ALE process. With this process protocol, we achieved an etch rate of 2.48±0.09 Å/cycle with 6 s cycles, an RMS surface roughness (Rq) of 0.83±0.08 Å, and an ALE synergy value of S = 99%. The parameters explored within this ALE process demonstrate effective subangstrom smoothening of 4H-SiC surfaces and is well-suited for a variety of classical and quantum device nanofabrication.
Deep potential molecular dynamics simulations of ion-enhanced etching of silicon by atomic chlorine
The continued development of plasma-assisted processing techniques requires a fundamental understanding of plasma-surface interactions. Molecular dynamics (MD) simulations have been employed to complement experimental studies and better understand the properties of such systems. Recently, machine learning (ML) methods have enabled the development of ab initio-based interatomic potentials, which can be generalized to complex combinations of multiple atom types. In this work, we use ML potentials developed using the Deep Potential Molecular Dynamics (DeepMD) framework to provide a model of ion-enhanced etching of Si by Cl atoms. We demonstrate the importance of proper selection of the training data set to the accuracy of the DeepMD model and compare our results to MD results using empirical potentials, as well as to experimental measurements. Exposure of undoped Si at 300 K to thermal Cl atoms yields a steady-state Cl coverage of 1.25 monolayers, which is slightly lower than the value obtained in previous experimental studies. Predictions of Si etch yields by simultaneous Cl atom and Ar + ion impacts as a function of ion energy, neutral to ion flux ratio, and angle of incidence of the ions are in reasonably good agreement with classical MD results and experimental measurements. Finally, etch yields and SiCl x mixed layer thicknesses during simultaneous bombardment of the Si(100) surface by Cl atoms and Cl + ions are in good agreement with experimental data. In conclusion, the present work is a necessary condition for the extension of the DeepMD procedure to more complex systems of interest in plasma-surface interactions.
Development and characterization of silicone-based tissue phantoms for pulse oximeter performance testing
Not provided.
SODA Synthesizer: an Open-source, Multi-level, Modular, Extensible Compiler from High-level Frameworks to Silicon
The SODA Synthesizer is an open-source modular, end-to-end hardware compiler framework. The SODA frontend, developed in MLIR, performs system-level design, code partitioning, and high-level optimizations to prepare the specifications for the hardware synthesis. The backend is based on a state-of-the-art high-level synthesis tool, and generates the final hardware design. The backend can interface with logic synthesis tools for field programmable gate arrays or with commercial and open-source logic synthesis tools for application-specific integrated circuits. We discuss the opportunities and challenges in integrating with commercial and open-source tools both at the frontend and backend, and the unique opportunities that an open-source hardware design ecosystem provides.
Silicon Contamination of the Praseodymium Doped Ceria Oxygen Surface Exchange Coefficient
Not Available
Effect of Temperature and FEC on Silicon Anode Heat Generation Measured by Isothermal Microcalorimetry
Isothermal microcalorimetry (IMC) was used to better understand parasitic reactions and heat generation from Si electrodes in the first 10 cycles using Li/Si half cells. Heat generation from cell polarization (ohmic heat), entropy changes (reversible heat), and parasitic reactions (parasitic heat) are separated and quantified. The effect of temperature and fluoroethylene carbonate (FEC) as an electrolyte additive are also explored. Our results show that at the C/10 cycling rate used here, ohmic heat makes the largest contribution to overall heat generation while reversible heat is the smallest. Ohmic heat generation increases with cycle number due to increasing internal resistance, though the effect is smaller for cells with FEC. Interestingly, capacity-normalized parasitic heat generation is largely unaffected by changes in temperature despite differing reaction kinetics. We show that this is caused by a decrease in average parasitic reaction enthalpy as temperature is increased. Further, cells with FEC display higher average parasitic reaction enthalpy than cells without. The average parasitic reaction enthalpies for all the Si electrodes we tested were lower than previously reported values for graphite, indicating that the SEI formed on Si is less stable.