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At least 1,225 records · Page 68

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NASA NTRS1991

LDEF-space environmental effects on materials: Composites and silicone coatings

The objective of the Lockheed experiment is to evaluate the effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites. Two diverse categories are reported: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, CTE, and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicon coatings.

Petrie, Brian C.↗

NASA NTRS1989

Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.

Grunthaner, P. J.↗

NASA NTRS1990

A silicon micromachined piezoresistive accelerometer for health and condition monitoring

Silicon micromachining etching techniques were utilized to batch-fabricate hundreds of general purpose microaccelerometers on a single silicon substrate. Piezoresistive sensing elements were aligned to the back-side patterns using an IR mask aligner and then diffused into the areas of maximum stress. Capping of the two-arm cantilever beam structure was achieved using a combination of electrostatic bonding and low temperature glass films. Overrange protection, critical damping, and overall protection from the outside environment are achieved by controlling the cavity depths of the top and bottom covers. Temperature compensation, amplification, and filtering are performed by a companion LSI chip that is interfaced to the accelerometer by conventional wire-bonding techniques.

Walsh, Kevin M.↗

NASA NTRS1991

Linear electro-optic effect in cubic silicon carbide

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

Tang, Xiao↗

NASA NTRS1992

An overview of silicon carbide device technology

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Neudeck, Philip G.↗

NASA NTRS1992

Using silicon diodes for detecting the liquid-vapor interface in hydrogen

Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition form vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

Dempsey, Paula J.↗

NASA NTRS1992

LDEF-space environmental effects on materials: Composites and silicone coatings

The effects of long term low Earth orbit environments on thermal control coatings and organic matrix/fiber reinforced composites are discussed. Two diverse categories are reported here: silicone coatings and composites. For composites physical and structural properties were analyzed; results are reported on mass/dimensional loss, microcracking, short beam shear, coefficient of thermal expansion (CTE), and flexural properties. The changes in thermal control properties, mass, and surface chemistry and morphology are reported and analyzed for the silicone coatings.

Petrie, Brian C.↗

NASA NTRS1991

Second harmonic conversion in cubic silicon carbide at 1.06 micron

This letter describes second harmonic conversion in cubic silicon carbide (beta-SiC) at a wavelength of 1.06 micron. Epitaxial layers of beta-SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase-matched films of beta-SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. The measured value of the effective second order nonlinear susceptibility for beta-SiC is chi super (2) eff = 1.05 +/- 0.3 x 10 exp -9 esu.

Harris, G. L.↗

NASA NTRS1992

Crack healing behavior of hot pressed silicon nitride due to oxidation

It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

Choi, S. R.↗

NASA NTRS1993

Chemical-Vapor Deposition Of Silicon Carbide

Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

Cagliostro, D. E.↗

NASA NTRS1993

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Gokoglu, S. A.↗

NASA NTRS1992

Observations on infiltration of silicon carbide compacts with an aluminium alloy

The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

Asthana, R.↗

NASA NTRS1992

Silicon and oxygen charge state distributions and relative abundances in the solar wind measured by SWICS on Ulysses

We report an initial survey of solar wind silicon and oxygen using data obtained with the Ulysses Solar Wind Ion Composition Spectrometer. In this study, the O(+7)/O(+6) ratio is used to group silicon counts accumulated over a two month period. Results on Si charge state distributions, relative Si/O abundances, and associated proton kinetic temperature and speed distributions are presented.

Galvin, A. B.↗

NASA NTRS1992

Using silicon diodes for detecting the liquid-vapor interface in hydrogen

Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition from vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

Dempsey, Paula J.↗

NASA NTRS1991

Cryogenic monocrystalline silicon Fabry-Perot cavity for the stabilization of laser frequency

A 1.6 kg silicon monocrystal was used to make a Fabry-Perot optical cavity operated at cryogenic temperatures. High-resolution thermal expansion measurements were made as the silicon cooled to 4.2 K, in order to characterize the cavity as a length reference standard. A helium-neon laser was then locked to a transmission resonance at liquid-helium temperatures, and the laser frequency tracked the cavity resonance with error fluctuations at the level of 10 Hz/sq rt Hz in the bandwidth dc to 1 Hz. Implications of the combined set of data, thermal expansion plus frequency-tracking fluctuations, for using such a system as a frequency standard are discussed.

Richard, J.-P.↗

NASA NTRS1993

Micromachined silicon cantilever beam accelerometer incorporating an integrated optical waveguide

A micromachined cantilever beam accelerometer is described in which beam deflection is determined optically. A diving board structure is anisotropically etched into a silicon wafer. This diving board structure is patterned from the wafer backside so as to leave a small gap between the tip of the diving board and the opposite fixed edge on the front side of the wafer. In order to sense a realistic range of accelerations, a foot mass incorporated onto the end of the beam is found to provide design flexibility. A silicon nitride optical waveguide is then deposited by low pressure chemical vapor deposition (LPCVD) onto the sample. Beam deflection is measured by the decrease of light coupled across the gap between the waveguide sections. In order to investigate sensor response and simulate deflection of the beam, we utilized a separate beam and waveguide section which could be displaced from one another in a precisely controlled manner. Measurements were performed on samples with gaps of 4.0, 6.0, and 8.0 micron and the variation of the fraction of light coupled across the gap as a function of displacement and gap spacing was found to agree with overlap integral calculations.

Burcham, Kevin E.↗

NASA NTRS1991

Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

Miyoshi, Kazuhisa↗

NASA NTRS1994

Synthesis Of A Precursor Of Silicon Nitride

Promising route toward production of highly pure, finely divided, easily sinterable silicon nitride (Si3N4) involves thermal decomposition of silicon diimide {Si(NH)2} prepared by ammonolysis of Si(SCN)4 in CH3CN and purified by complete extraction of byproduct NH4SCN by use of ammonia at temperature and pressure above critical point.

Philipp, Warren H.↗