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Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗

Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics

A resistive switching (RS) random access memory device with ZrO{sub 2}-doped HfO{sub 2} exhibits better RS performance than that with pure HfO{sub 2}. In particular, I{sub res}, V{sub res}, and V{sub set} are reduced by approximately 58%, 38%, and 39%, respectively, when HfO{sub 2} is doped with ZrO{sub 2} (9 at. %). In addition, the ZrO{sub 2} doping in HfO{sub 2} makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at. %) is polycrystalline. Elemental mapping results by scanning TEM–energy dispersive spectroscopy also prove that ZrO{sub 2} is uniformly distributed in the HZO (9 at. %) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO{sub 2} doping into HfO{sub 2} likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NiAl Oxidation Reaction Processes Studied In Situ Using MEMS-Based Closed-Cell Gas Reaction Transmission Electron Microscopy

The nanoscale oxidation mechanisms and kinetics of a model β-NiAl system were investigated using in situ closed-cell gas reaction scanning transmission electron microscopy (STEM). Here, we directly visualize the dynamic structural and chemical changes that occur during high-temperature oxidation at a high spatial resolution of 50.3Ni–49.7Al (at.%) nanoparticles under static air conditions at 730 Torr with heating up to 750 °C at 5 °C/s. A MEMS-based gas cell system, with microfabricated heater devices and a gas delivery system, was used to reveal site-specific oxidation initiation sites. Through time-resolved annular dark-field STEM imaging, we tracked the nanoscale oxidation kinetics of Al 2 O 3 . After oxidation at 750 °C, nucleation of voids at the Ni/Al 2 O 3 interface was observed along a NiAl grain boundary, followed by the formation of faceted NiO crystals. Small faceted cubic crystals of NiO were formed at the initial stage of oxidation at high PO 2 due to the outward self-diffusion of Ni 2+ ions, followed by the formation of a mixture of metastable and stable α-Al 2 O 3 at the oxide/metal interface that is attributed to a PO 2 decrease with oxidation time, which agreed with thermodynamic modeling calculations. Furthermore, the results from these in situ oxidation experiments in the β-NiAl system are in agreement with the established oxidation mechanisms; however, with in situ closed-cell gas microscopy it is now feasible to investigate nanoscale oxidation mechanisms and kinetics in real time and at high spatial resolution and can be broadly applied to understand the basic high-temperature oxidation mechanisms for a wide range of alloy compositions.

36 MATERIALS SCIENCE↗

Inkless, dry printing nanographene via in-Situ Coordinated laser ablation and sintering processes

Printing carbon, such as graphene and other carbon structures, for flexible and printed electronics currently relies on either ink-based printing, laser-induced forward transfer (LIFT), or laser-induced graphitization (LIG) to convert carbon-rich precursor materials, such as polymers, to graphene-like carbon structures. Liquid inks contain toxic solvents, surfactants, and stabilizing additives that degrade electrical conductivity and require high-temperature post-processing. On the other hand, LIG is limited by the substrate. Here, this study introduces an additive manufacturing method for dry-printing carbon nanomaterials, ranging from amorphous carbon to crystalline graphene-like structures, on various substrates. The system utilizes laser ablation of a solid graphite target to create pure carbon nanoparticles in situ and on demand. An inert gas carries the nanoparticles onto the substrate, where they can be deposited either as amorphous structures or laser-sintered in real time to form various graphitic structures. The study of laser processing parameters, specifically fluence and pulse repetition frequency, revealed three unique regimes of nanostructure evolution that influence the morphological and electrical properties of these printed structures. Raman spectroscopy confirmed graphitization with a resistivity slightly higher than that of the bulk graphite target. The conductivity/resistivity could be tuned as a function of sintering laser power. Scanning transmission electron microscopy (STEM) revealed that turbostratic nanographene formed with an interlayer spacing of 0.40 nm. Despite ink-based printing methods, such as screen printing, inkjet printing (IJP), and aerosol jet printing (AJP), this eco-friendly and green manufacturing technique could eliminate toxic chemicals, reduce environmental impact, and enable single-step fabrication of carbon-based devices for applications in wearable sensors, energy storage, flexible electronics, and Internet of Things (IoT) devices.

Additive nanomanufacturing↗

Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

36 MATERIALS SCIENCE↗

Domain-Dependent Electronic Properties of 2D Copper Boride Synthesized from Reversible Subsurface Diffusion on Cu(111)

Emerging boron-based 2D materials hold properties with potential applications ranging from electronic devices to catalysis and energy storage. Using physical vapor deposition, 2D copper borides are formed on Cu(111) at elevated temperatures. However, the as-prepared surfaces often contain boron clusters that compromise structural homogeneity, and the dynamics of their formation is not yet fully understood. Through in situ low-energy electron microscopy (LEEM), Auger electron spectroscopy (AES), and scanning tunneling microscopy/spectroscopy (STM/STS), we show that cluster-free 2D CuB x is synthesized via reversible subsurface diffusion of boron atoms. The resolved regular atomic structure aligns with the previously calculated Cu 8 B 14 model. In a rare case, possibly due to surface strain and a change of orientation, a second domain of CuB x was observed with a pronounced change in electronic properties, yet electronic states remain delocalized in both domains. In conclusion, these findings demonstrate the sensitivity of electronic properties to domain structure and highlight a potential opportunity to tune 2D CuB x for diverse applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Oxygen-induced defects at the lead halide perovskite/graphene oxide interfaces

Here, graphene oxide or its reduced derivative (GO/RGO) replace metal oxides in perovskite photovoltaics to achieve energy band alignment for minimization of the energy barriers at the film interfaces allowing efficient charge transport, and eliminate stability issues. However, the power conversion efficiencies fall in a wide range (~0.6–18%). Therefore, the perovskite growth and nucleation on GO/RGO require fundamental understanding to improve device function for controlled fabrication, which remain a major challenge. We analyze the surface morphology and crystallization of the lead halide perovskites (MAPbX 3 ) at 20–300 °C on GO using X-ray diffraction and photoelectron spectroscopy. To determine defect mechanisms and their composition, we perform in situ transmission infrared and micro Raman spectroscopy, and the cross-sectional scanning microscopy that captures interfacial imperfections with the oxygen defects. We demonstrate the oxygen-induced defects at the MAPbX 3 /GO interfaces that initiate at room temperature, and occur through the nucleophilic substitution reactions. Unexpectedly, structural defects nucleate in GO forming chemically reduced GO, and modify the surface morphology that yield a poor perovskite growth. Our theoretical studies also reveal that energetically favorable, exothermic reactions between the halides of the perovskite precursors and the oxygen groups of GO generate acidic reaction by-products ( i.e. HX), that confirm the formation of oxygen-induced defects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

36 MATERIALS SCIENCE↗

Room temperature ferroelectric and magnetic investigations and detailed phase analysis of Aurivillius phase Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} thin films

Aurivillius phase Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} (BTF7C3O) thin films on {alpha}-quartz substrates were fabricated by a chemical solution deposition method and the room temperature ferroelectric and magnetic properties of this candidate multiferroic were compared with those of thin films of Mn{sup 3+} substituted, Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Mn{sub 0.3}O{sub 15} (BTF7M3O). Vertical and lateral piezoresponse force microscopy (PFM) measurements of the films conclusively demonstrate that BTF7C3O and BTF7M3O thin films are piezoelectric and ferroelectric at room temperature, with the major polarization vector in the lateral plane of the films. No net magnetization was observed for the in-plane superconducting quantum interference device (SQUID) magnetometry measurements of BTF7M3O thin films. In contrast, SQUID measurements of the BTF7C3O films clearly demonstrated ferromagnetic behavior, with a remanent magnetization, B{sub r}, of 6.37 emu/cm{sup 3} (or 804 memu/g), remanent moment = 4.99 Multiplication-Sign 10{sup -5} emu. The BTF7C3O films were scrutinized by x-ray diffraction, high resolution transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis mapping to assess the prospect of the observed multiferroic properties being intrinsic to the main phase. The results of extensive micro-structural phase analysis demonstrated that the BTF7C3O films comprised of a 3.95% Fe/Co-rich spinel phase, likely CoFe{sub 2-x}Ti{sub x}O{sub 4}, which would account for the observed magnetic moment in the films. Additionally, x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM) imaging confirmed that the majority of magnetic response arises from the Fe sites of Fe/Co-rich spinel phase inclusions. While the magnetic contribution from the main phase could not be determined by the XMCD-PEEM images, these data however imply that the Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} thin films are likely not single phase multiferroics at room temperature. The PFM results presented demonstrate that the naturally 2D nanostructured Bi{sub 5}Ti{sub 3}Fe{sub 0.7}Co{sub 0.3}O{sub 15} phase is a novel ferroelectric and has potential commercial applications in high temperature piezoelectric and ferroelectric memory technologies. The implications for the conclusive demonstration of ferroelectric and ferromagnetic properties in single-phase materials of this type are discussed.

36 MATERIALS SCIENCE↗

Characterization and calibration of compact array spectrometers in the ultraviolet spectral region

Array-based spectrometers, with their compact size, low weight, low cost, and fast measurement time, are now frequently used in place of both conventional single-channel scanning monochromators, and broadband meters. Their rapid measurement capability makes them an attractive option for routine solar UV spectral measurements, where shortterm variability in signal is a challenge. However, compactness, portability, low cost and high speed are achieved at the expense of the spectrometer's optical and electronic performance. Thus such spectrometers are more prone to measurement error from environmental changes, and more prone to other intrinsic sources of error such as stray light and detector non-linearity, which significantly affect solar UV measurements, than a scanning monochromator. The effects of stray light and non-linearity can be reduced either by improved optical and detector design or by a detailed spectrometer characterization. We present in this paper our investigation of the performance of three different commercial array spectrometers: two mini-spectrometers, and a more elaborate array spectrometer with an on-board image amplifier device. These were tested for a subset of performance parameters: their wavelength accuracy and stability, electronic linearity, responsivity linearity, stray light sensitivity, and mechanical stability and repeatability. With all three spectrometers we found that these parameters, particularly but not limited to stray light, had a significant impact on the measurement of the incoming optical radiation. This meant that, without characterization, the instruments would be unable to accurately measure the UV component of any source with significant visible radiation. We discuss various simple and low-cost solutions for improving the performance of these instruments, and providing a rigorous calibration using a straightforward set-up including optical filters and the quasi-monochromatic light from a double monochromator.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

36 MATERIALS SCIENCE↗

Effect of injected flux and current temporal phasing on self-organization in the HIT-SI3 experiment

The HIT-SI3 device at the University of Washington uses three oscillating inductive helicity injectors to form and sustain spheromak plasma equilibria. By adjusting the temporal phase of the injector waveforms with respect to each other, the toroidal spectrum of the imposed perturbations can be controlled. Using a recently implemented GPU-based control system, the available mode spectra were explored experimentally by scanning the space of relative injector phasing. In this space, significant variation in the toroidal mode spectrum ($n$ = 1, 2, 3) of the perturbations was observed. Additionally, variation in characteristics of driven equilibria was also observed, including a ≈ $30$% range in toroidal current gain ($I$ $Φ$ / $I$ $Inj$ ). Experimental results are compared with both a composite-equilibria and nonlinear dynamic model, including extended MHD simulations using the NIMROD code and composite Taylor state equilibria computed using the PSI-Tet code. In conclusion, qualitative agreement is seen with the nonlinear models, but not with composite-equilibria models, suggesting the use of nonlinear models to better capture observed plasma dynamics and provide predictive use for future experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Imaging the spin chirality of ferrimagnetic Néel skyrmions stabilized on topological antiferromagnetic Mn 3 Sn

Néel skyrmions are generally realized in asymmetric multilayers made of heavy metals (HMs) and ultrathin ferromagnets possessing strong interfacial Dzyaloshinskii-Moriya interactions (iDMIs). Depending on the relative strengths of iDMIs at the interfaces, various types of Néel skyrmions have been suggested, which are typified with characteristically different topological properties and current-driven dynamics. This suggests the importance of a precise quantification of their spin chiralities. In this paper, we explore the possibility of realizing Néel skyrmions in magnetic multilayers without the direct usage of standard HMs. Specifically, through depositing a thin layer of ferrimagnetic (FIM) CoTb layer on top of an antiferromagnetic (AFM) quantum material of composition Mn 3 Sn, the AFM exchange interaction at the asymmetric interface provides an equivalent iDMI for stabilizing FIM Néel skyrmions. Secondly, through using advanced four-dimensional Lorentz scanning transmission electron microscopy (4D LSTEM), in combination with x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM), we can directly determine the spin chirality of FIM Néel skyrmions. Finally, the present findings not only broaden the phase space for chiral interfacial magnetism but also provide a possibility for future applications of heavy-metal-free skyrmionic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Improvements in electrical and dielectric properties of substituted multiferroic LaMnO{sub 3} based nanostructures synthesized by co-precipitation method

Graphical abstract: Display Omitted Highlights: ► Simultaneous double ion substitutions philosophy is introduced in LaMnO{sub 3}. ► La{sub 1−x}Gd{sub x}Mn{sub 1−y}Cr{sub y}O{sub 3} nanoparticles are not reported previously. ► La{sub 1−x}Gd{sub x}Mn{sub 1−y}Cr{sub y}O{sub 3} nanoparticles are synthesized by co-precipitation method. ► The 12 fold increase in resistivity of LaMnO{sub 3} nanostructures is observed. -- Abstract: A series of La{sub 1−x}Gd{sub x}Mn{sub 1−y}Cr{sub y}O{sub 3} nanoparticles (where x, y = 0, 0.25, 0.50, 0.75 and 1.0) has been synthesized by the chemical co-precipitation method, involving double ion substitution philosophy. The nanoparticles were characterized by thermo gravimetric analysis (TGA), X-ray fluorescence spectrometry (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, vibrating sample magnetometer (VSM), DC electrical resistivity and dielectric measurements. The XRD and FTIR analysis confirmed the single orthorhombic phase and the crystallite size were found in the range of 16–34 nm. DC resistivity exhibited very interesting behavior which increased from 1.41 × 10{sup 8} to 16.35 ± 0.2 × 10{sup 8} Ω cm upon complete double ions replacement of La and Mn with Gd and Cr, respectively. This very high resistivity variation upon substitution definitely would open new avenues for applications of these materials in microwave devices and other related areas. The dielectric properties of these nanoparticles were also studied at room temperature in the range of 6 kHz to 5 MHz and the maximum dielectric behavior (ε′ = 2.86 × 10{sup 3}, tan δ = 5.41, ε″ = 15.5 × 10{sup 3}) was exhibited by La{sub 0.75}Gd{sub 0.25}Mn{sub 0.75}Cr{sub 0.25}O{sub 3} at 6 kHz. Hysteresis loops measurements showed that the synthesized nanomaterials are paramagnetic in nature at room temperature.

36 MATERIALS SCIENCE↗

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗

High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope

In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10{sup −7} Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Modulating the Electronic Transport of 2D Sb2Te3 Nanoplates by Coinage Metal Intercalation

Thermoelectric materials are particularly relevant to the current energy infrastructure and demands of the 21st century, converting waste heat into usable electricity. The solution intercalation of zerovalent copper into Sb2Te3 nanoplates, a well-established thermoelectric material, is reported. The copper intercalant is homogeneously distributed throughout the nanoplates, confirmed by scanning transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy. The copper composition was shown to be 6 at. % by X-ray photoelectron spectroscopy. Copper ordering within the van der Waals gaps of the nanoplates is confirmed by selected area electron diffraction. Fabrication and thermoelectric property measurements of single-crystal Sb2Te3 and Cu-Sb2Te3 nanoplate devices show effective modulation of electrical conductivity and Seebeck coefficient with Cu intercalation. X-ray photoelectron spectroscopic studies in the valence-band region reveal additional electronic states from copper that appear near the Fermi energy, postulated to act as electron acceptors, leading to modulation of the electronic transport properties.

2D nanoplates↗

Charge Carrier Activity on Single-Particle Photo(electro)catalysts: Toward Function in Solar Energy Conversion

Understanding the fundamental properties of charge carriers on the surface of semiconductor photo(electro)catalysts is key to the rational design of efficient photo(electro)catalytic devices for sunlight-driven energy conversion. Here high spatial resolution information is always desirable because of the ubiquitous heterogeneity in semiconductor particles. In this Perspective, we review the latest advances in nanoscale imaging and quantitative analysis of charge carrier activities on individual semiconductor particles down to subparticle resolution, covering the approaches of single-molecule super-resolution fluorescence imaging, scanning electron microscopy, and photoluminescence microscopy. We further highlight direct, operando functional assessments of their performances toward the targeted photo(electro)-catalytic processes through single- and subparticle photocurrent measurements. Here, we also discuss the significance of establishing quantitative relations between the desired functions of photo(electro)catalysts and their surface charge carrier activities. These fundamental relations can provide guiding principles for rationally engineering photo(electro)catalytic systems, for example with cocatalysts, for a broad range of applications.

14 SOLAR ENERGY↗