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At least 1,225 records · Page 68

Towards diluted magnetism in TaAs

Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g., to explore anomalous quantum Hall phenomena. In this work, we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics.

36 MATERIALS SCIENCE↗

Local control of defects and switching properties in ferroelectric thin films

Electric-field switching of polarization is the building block of a wide variety of ferroelectric devices. In turn, understanding the factors affecting ferroelectric switching and developing routes to control it are of great technological significance. This research provides systematic experimental evidence of the role of defects in affecting ferroelectric-polarization switching and utilizes the ability to deterministically create and spatially locate point defects in $PbZr_{0.2}Ti_{0.8}O_3$ thin films via focused-helium-ion bombardment and the subsequent defect-polarization coupling as a knob for on-demand control of ferroelectric switching (e.g., coercivity and imprint). At intermediate ion doses ($0.22-2.2×10^{14}\,ions\,cm^{-2}$), the dominant defects (isolated point defects and small clusters) show a weak interaction with domain walls (pinning potentials from $200-500\,K\,MV\,cm^{-1}$), resulting in small and symmetric changes in the coercive field. At high doses ($0.22-1×10^{15}\,ions\,cm^{-2}$), on the other hand, the dominant defects (larger defect complexes and clusters) strongly pin domain-wall motion (pinning potentials from 500 to $1600\,K\,MV\,cm^{-1}$), resulting in a large increase in the coercivity and imprint, and a reduction in the polarization. This local control of ferroelectric switching provides a route to produce novel functions; namely, tunable multiple polarization states, rewritable pre-determined 180° domain patterns, and multiple zero-field piezoresponse and permittivity states. Such an approach opens up pathways to achieve multilevel data storage and logic, nonvolatile self-sensing shape-memory devices, and nonvolatile ferroelectric field-effect transistors.

36 MATERIALS SCIENCE↗

Phonon scattering effects from point and extended defects on thermal conductivity studied via ion irradiation of crystals with self-impurities

Fundamental theories predict that reductions in thermal conductivity from point and extended defects can arise due to phonon scattering with localized strain fields. In this paper, to experimentally determine how these strain fields impact phonon scattering mechanisms, we employ ion irradiation as a controlled means of introducing strain and assorted defects into the lattice. In particular, we observe the reduction in thermal conductivity of intrinsic natural silicon after self-irradiation with two different silicon isotopes, $^{28}\mathrm{Si}^{+}$ and $^{29}\mathrm{Si}^{+}$. Irradiating with an isotope with a nearly identical atomic mass as the majority of the host lattice produces a damage profile lacking mass impurities and allows us to assess the role of phonon scattering with local strain fields on the thermal conductivity. Our results demonstrate that point defects will decrease the thermal conductivity more so than spatially extended defect structures assuming the same volumetric defect concentrations due to the larger strain per defect that arises in spatially separated point defects. Finally, with thermal conductivity models using density functional theory, we show that for a given defect concentration, the type of defect (i.e., point vs extended) plays a negligible role in reducing the thermal conductivity compared to the strain per defect in a given volume.

36 MATERIALS SCIENCE↗

Micro-beam Laue alignment of multi-reflection Bragg coherent diffraction imaging measurements

Multi-reflection Bragg coherent diffraction imaging has the potential to allow three-dimensional (3D) resolved measurements of the full lattice strain tensor in specific micro-crystals. Until now such measurements were hampered by the need for laborious, time-intensive alignment procedures. Here, in this paper, a different approach is demonstrated, using micro-beam Laue X-ray diffraction to first determine the lattice orientation of the micro-crystal. This information is then used to rapidly align coherent diffraction measurements of three or more reflections from the crystal. Based on these, 3D strain and stress fields in the crystal are successfully determined. This approach is demonstrated on a focused ion beam milled micro-crystal from which six reflections could be measured. Since information from more than three independent reflections is available, the reliability of the phases retrieved from the coherent diffraction data can be assessed. Lastly, our results show that rapid, reliable 3D coherent diffraction measurements of the full lattice strain tensor in specific micro-crystals are now feasible and can be successfully carried out even in heavily distorted samples.

36 MATERIALS SCIENCE↗

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗

DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options

Four D flip-flop (DFF) layouts were created from the same schematic in Sandia National Laboratories’ CMOS7 silicon-on-insulator (SOI) process. Single-event upset (SEU) modeling and testing showed an improved response with the use of shallow (not fully bottomed) N-type metal-oxide-semiconductor field-effect transistors (NMOSFETs), extending the size of the drain implant and increasing the critical charge of the transmission gates in the circuit design and layout. This research also shows the importance of correctly modeling nodal capacitance, which is a major factor determining SEU critical charge. Accurate SEU models enable the understanding of the SEU vulnerabilities and how to make the design more robust.

42 ENGINEERING↗

Effects of He Irradiation on Yttria-Stabilized Zirconia Ceramics

Here we study the effects of He irradiation on polycrystalline yttria-stabilized zirconia (YSZ), with the focus on irradiation-induced damage buildup, He behavior, and volume swelling. The evolution of irradiation-induced structural damage in polycrystalline YSZ, which is independent of grain orientation, is described by a multistep damage accumulation model. We found a three-step damage evolution process, and we observed different types of defects in the different damage steps. Compared with single-crystal YSZ, the second damage step occurs at a lower dose in polycrystalline YSZ due to the initial defects and strain. The implanted He ions are readily trapped along the grain boundaries and the mobility of He ions is greatly increased. The enhanced He mobility along the grain boundary leads to a lower threshold irradiation dose and a larger penetration depth for bubble formation. Similar morphologies are observed for the He bubbles in the polycrystalline YSZ is not influenced by grain orientation. Lastly, as both the extended defects and He bubbles can induce volume swelling, the variation in volume swelling as a function of dose can be divided into a two stage process.

36 MATERIALS SCIENCE↗

Flash electropolishing for TEM: Reducing FIB‐induced defects in tungsten with protocols for new materials

Focused ion beam (FIB) milling has become the dominant approach for site-specific transmission electron microscopy (TEM) specimen preparation; however, FIB damage remains a critical limitation for reliable microstructural characterisation, particularly in radiation effects studies. Tungsten is especially susceptible to FIB damage due to its high nuclear stopping power, which promotes the formation and strong diffraction contrast of FIB-induced ‘black spot’ defects that are indistinguishable from very fine irradiation-induced loops/defects resulting from low to intermediate temperature neutron irradiation. In this work, flash electropolishing is systematically evaluated as a post-FIB treatment for minimising preparation-induced artefacts for TEM analysis of tungsten-based alloys. Using a range of non-, ion-, and neutron-irradiated tungsten materials, the effectiveness of flash electropolishing has been assessed through direct comparison with conventional FIB and plasma-FIB preparation including low-energy Ga, Ar, Xe ion cleaning. The results demonstrate that flash electropolishing effectively removes FIB-damaged layers and ‘black spot’ defects, thereby enabling reliable observation of irradiation-induced dislocation structures. Key processing parameters governing flash electropolishing quality – including lamella thickness, applied voltage, polishing duration, electrolyte chemistry, and cathode geometry – have been systematically evaluated, and clear criteria were established for determining when flash electropolishing is required to ensure reliable microstructural analysis. This work also provides practical guidance for implementing flash electropolishing as an artefact-controlled specimen-preparation approach for TEM characterisation of FIB-produced specimens. The systematic protocol can be extended to other, non-tungsten materials.

TEM sample preparation↗

Effect of nonmagnetic defects on superconducting and transport properties of Ba(Fe{sub 1–x}Co{sub x}As){sub 2} high-T{sub c} superconductors

The effect of nonmagnetic defects on superconducting and transport properties of Ba(Fe{sub 0.94}Co{sub 0.06}As){sub 2} films is studied for obtaining information on the symmetry type of the order parameter for superconducting pnictides. Such defects are generated in the film by irradiation by He{sup +} ions with an energy of 200 keV. It is found that a decrease in superconducting transition temperature T{sub c} upon an increase in the concentration of nonmagnetic defects in this compound occurs much more slowly than predicted in the model assuming s{sup ±}-wave symmetry of the order parameter. Joint analysis of the influence of nonmagnetic defects on the superconducting and magnetotransport properties of such films leads to the conclusion that superconductivity is completely suppressed in them after critical disorder is attained, which assumes the s{sup ++}-wave symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H{sub 2}{sup +} ions

The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H{sub 2}{sup +} ions. It is shown that the distribution of the crystal’s components over depth is homogeneous; for doses as high as 5 × 10{sup 15} cm{sup −2}, the stoichiometric composition of the compound’s components is retained. The experimental value of the critical dose for the beginning of amorphization amounts to about 5 × 10{sup 15} cm{sup −2} and is in accordance with the calculated value. The results obtained by the method of the Raman scattering of light confirm conservation of crystalline structure and the start of the amorphization process.

36 MATERIALS SCIENCE↗

Linear and Nonlinear Optical Properties of Metal Nanocomposite Materials

The scientific theme of this award stated in its title is “Linear and Nonlinear Optical Properties of Metal Nanoparticle Composites.” The motivation for the proposal was based on prior work that highlighted unusual third-order nonlinear optical response of metal-nanoparticle composites created by Vanderbilt researchers at the Oak Ridge National Laboratory (ORNL) by implanting metal ions into fused-silica and sapphire substrates and annealing them under appropriate conditions to produce a solid solution comprising noble-metal nanoparticles embedded in an insulating matrix. For example, the well-known localized surface plasmon resonance (LSPR) of gold and silver nanoclusters and nanoparticles was known to yield enhanced effects on the nonlinear absorption and nonlinear refractive index of these materials. The project soon expanded to embrace a wider range of materials and nanostructures, including particularly vanadium dioxide with its insulator-to-metal transition, a wide variety of substrate hosts, and zinc oxide with its multi-faceted band-edge exciton that can be coupled to plasmonic degrees of freedom in silver and aluminum. We employed second- and third-order nonlinear optical spectroscopies and confocal microscopy to quantify the coupling between nanoparticles and adsorbates across interfaces. Because ORNL closed the ion-beam surface-modification facility in 2004, we then developed a nanofabrication technique combining focused ion-beam lithography and pulsed laser deposition to create ordered arrays of metal and oxide nanoparticles in various planar geometries and heterostructures. By 2008, aided by finite-difference time-domain and finite-element calculations, we began to design and fabricate plasmonic “workbenches” on which we could excite quasiparticles (e.g., excitons, phonons, plasmons) using optical signals and electrical impulses, and map the material response down to femtosecond time and nanometer length scales. We developed additional nanofabrication capabilities (e.g., dual-layer electron-beam lithography, quantum-well fabrication and multilayer magnetron sputtering and electron-beam deposition) to create a variety of novel heterostructures as model nanocomposite systems. This led to several new opportunities to study the optical properties of these composites informed by views of potential device configurations. Among the scientific themes that emerged in published papers based on new materials and nanostructures were the following: ultrafast electron dynamics in metamaterials, including ultrafast THz microscopy of the insulator-to-metal transition in VO 2 nanoparticles; plasmon-driven electron injection to promote phase transitions in VO 2 ; and second-harmonic generation in nanostructures without inversion symmetry, in particular, the Archimedean spiral with overall sub-wavelength dimensions. We also explored dimensional and structural effects in plasmonic coupling, including exciton-plasmon coupling in ZnO nanowires; exciton-plasmon coupling in structures incorporating two-dimensional dichalcogenides; and tunable plasmon-induced transparency in plasmonic heterostructures incorporating phase-changing VO 2 . Finally, it should be noted that the work on Archimedean nanospirals and plasmon-exciton coupling led directly into a current quantum-optics research project on photon correlations in diamond nanoparticles, exemplified by the first publication from that effort [Ref. [47] in the bibliography]. A more detailed account setting in the appropriate scientific context all forty-eight papers supported by this award follows.

36 MATERIALS SCIENCE↗

X-Ray Scattering and Electron Microscopy Characterization

This research added to the understanding of p-type activation in GaN vertical transistors for power applications by identifying key defects which inhibit p-type activation. We also developed an approach to eliminate such defects with the appropriate annealing treatments. Additionally we addressed the limitations of GaN substrates used in the production of these devices and exploited the non-uniform distribution of substrate defects to better understand the relationship between device performance and defect density. Through this work, we also established how irregularities – step bunching and haze formation – during epitaxial growth are related to defects in the underlying substrates. Our charter was to work with several other teams to determine connections between defects and performance of GaN-based vertical transistors and have several presentations and publications as well as manuscripts and follow-up collaborations. The research at UCLA supported two full graduate students, one of whom is graduating this summer as well as three undergraduate students.

36 MATERIALS SCIENCE↗

Sample Preparation and Experimental Design for In Situ Multi-Beam Transmission Electron Microscopy Irradiation Experiments

We discuss the need to understand materials exposed to overlapping extreme environments such as high temperature, radiation, or mechanical stress. When these stressors are combined there may be synergistic effects that enable unique microstructural evolution mechanisms to activate. Understanding of these mechanisms is necessary for the input and refinement of predictive models and critical for engineering of next generation materials. The basic physics and underlying mechanisms require advanced tools to be investigated. The in situ ion irradiation transmission electron microscope (I 3 TEM) is designed to explore these principles. To quantitatively probe the complex dynamic interactions in materials, careful preparation of samples and consideration of experimental design is required. Particular handling or preparation of samples can easily introduce damage or features that obfuscate the measurements. There is no one correct way to prepare a sample; however, many mistakes can be made. The most common errors and things to consider are highlighted within. The I 3 TEM has many adjustable variables and a large potential experimental space, therefore it is best to design experiments with a specific scientific question or questions in mind. Experiments have been performed on large number of sample geometries, material classes, and with many irradiation conditions. The following are a subset of examples that demonstrate unique in situ capabilities utilizing the I 3 TEM. Au nanoparticles prepared by drop casting have been used to investigate the effects of single ion strikes. Au thin films have been used in studies on the effects of multibeam irradiation on microstructure evolution. Zr films have been exposed to irradiation and mechanical tension to examine creep. Ag nanopillars were subjected to simultaneous high temperature, mechanical compression, and ion irradiation to study irradiation induced creep as well. These results impact fields including: structural materials, nuclear energy, energy storage, catalysis, and microelectronics in space environments.

47 OTHER INSTRUMENTATION↗

Some effects of gas adsorption on the high temperature volatile release behavior of a terrestrial basalt, tektite and lunar soil

Mass pyrograms obtained from high-temperature, mass psectrometric pyrolysis of a glassy theoleiitic submarine basalt and a tektite, ground in air to less than 64 microns, have shown N2 and SO release patterns very similar to those from the pyrolysis of mature lunar soil fines. The N2 and CO release behavior from the terrestrial samples reproduces the biomodal, high-temperature (approximately 700 and 1050 C) features from the lunar samples. Unground portions of the basalt and tektite show no release of N2 and CO during pyrolysis. Grinding also alters the release behavior and absolute amounts of H2O and CO2. It is suggested that adsorption of atmospheric gases in addition to solar wind implantation of ions may account for the wide range of values in previously reported concentrations of carbon and nitrogen from lunar fines.

Graham, D. G.↗

Ion Engine With Solid-Electrolyte Ion Generator

Working fluid utilized efficiently. Working fluid positive ions conducted through solid electrolyte to outside, then accelerated in external electric field. While in solid-electrolyte material, ions do not recombine with electrons: transported to surface with high ionization efficiency. Provides new way to generate beam of ions for implantation in semiconductors or other applications.

Richter, R.↗

Applications of ion beam technology

Wire adhesion in steel belted radial tires; carbon fibers and composite; cold welding, brazing, and fabrication; hydrogen production, separation, and storage; membrane use; catalysis; sputtering and texture; and ion beam implantation are discussed.

Gelerinter, E.↗