Ferromagnetic Schottky junctions using half-metallic Co{sub 2}MnSi/diamond heterostructures
We demonstrate half-metallic Heusler Co{sub 2}MnSi films epitaxially grown on diamond semiconductors using the ion-beam assisted sputtering method. Lower temperature growth below ∼400 °C is key for obtaining abrupt Co{sub 2}MnSi/diamond interfaces. The Co{sub 2}MnSi films on diamond showed a negative anisotropic magnetoresistance of ∼0.2% at 10 K, suggesting the half-metallic nature of the Co{sub 2}MnSi films. Schottky junctions formed using the Co{sub 2}MnSi/diamond heterostructures at 400 °C showed clear rectification properties with a rectification ratio of ∼10{sup 3}. The Schottky barrier heights of the Co{sub 2}MnSi/diamond interfaces were estimated to be ∼0.8 eV. These results indicate that Co{sub 2}MnSi is a promising spin source for spin injection into diamond.