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All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

PV Technology for Low Intensity, Low Temperature (LILT) Applications

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

spacecraft power LILT low temperature low intensit↗
NASA NTRS1994

(abstract) PV Technology for Low Intensity, Low Temperature (LILT) Applications

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

spacecraft power LILT low temperature low intensit↗
NASA NTRS1980

Laser diode with thermal conducting, current confining film

A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.

Hawrylo, Frank Z.↗
NASA NTRS2008

Broadband Microstrip-to-Coplanar Strip Double-Y Balun

A new version of the double-Y balun, transitioning from an unbalanced microstrip to a balanced coplanar strip (CPS) line, has been designed to feed a complementary spiral antenna with an input impedance of 100 Omega. The new double-Y balun transitions from a microstrip line with truncated ground plane to a CPS line. The balun does not employ CPW lines; hence, CPW bridges are not required at the junction. In addition, the balun does not exhibit CPW parasitic resonances, thereby improving passband performance. The new version of the double-Y balun is designed to feed a complementary spiral antenna. Panels on the right illustrate an expanded view of the balun junction. Preliminary voltage standing-wave ratio (VSWR) and insertion loss data are illustrated. Measured data were compared with numerical results computed using Momentum. It is seen that the balun exhibits a VSWR of less than 1.5 from 400 MHz to 8 GHz and a VSWR of less than 1.8 up to 13 GHz. The VSWR can be reduced further by reducing reflections from the balun junction and load resistor. Also, the balun is seen to exhibit an insertion loss of less than 1.5 dB up to 12 GHz. Further work involves characterizing the balun's performance when feeding a complementary spiral antenna.

Venkatesan, Jaikrishna↗
NASA NTRS2007

Forward Technology Solar Cell Experiment First On-Orbit Data

This paper presents first on orbit measured data from the Forward Technology Solar Cell Experiment (FTSCE). FTSCE is a space experiment housed within the 5th Materials on the International Space Station Experiment (MISSE-5). MISSE-5 was launched aboard the Shuttle return to flight mission (STS-114) on July 26, 2005 and deployed on the exterior of the International Space Station (ISS). The experiment will remain in orbit for nominally one year, after which it will be returned to Earth for post-flight testing and analysis. While on orbit, the experiment is designed to measure a 36 point current vs. voltage (IV) curve on each of the experimental solar cells, and the data is continuously telemetered to Earth. The experiment also measures the solar cell temperature and the orientation of the solar cells to the sun. A range of solar cell technologies are included in the experiment including state-of-the-art triple junction InGaP/GaAs/Ge solar cells from several vendors, thin film amorphous Si and CuIn(Ga)Se2 cells, and next-generation technologies like single-junction GaAs cells grown on Si wafers and metamorphic InGaP/InGaAs/Ge triple-junction cells. In addition to FTSCE, MISSE-5 also contains a Thin-Film Materials experiment. This is a passive experiment that will provide data on the effect of the space environment on more than 200 different materials. FTSCE was initially conceived in response to various on-orbit and ground test anomalies associated with space power systems. The Department of Defense (DoD) required a method of rapidly obtaining on orbit validation data for new space solar cell technologies, and NRL was tasked to devise an experiment to meet this requirement. Rapid access to space was provided by the MISSE Program which is a NASA Langley Research Center program. MISSE-5 is a completely self-contained experiment system with its own power generation and storage system and communications system. The communications system, referred to as PCSat, transmits and receives in the Amateur Radio band providing a node on the Amateur Radio Satellite Service. This paper presents an overview of the various aspects of MISSE-5 and a sample of the first measured on orbit data.

Walters, R. J.↗
NASA NTRS2010

Quad-Chip Double-Balanced Frequency Tripler

Solid-state frequency multipliers are used to produce tunable broadband sources at millimeter and submillimeter wavelengths. The maximum power produced by a single chip is limited by the electrical breakdown of the semiconductor and by the thermal management properties of the chip. The solution is to split the drive power to a frequency tripler using waveguides to divide the power among four chips, then recombine the output power from the four chips back into a single waveguide. To achieve this, a waveguide branchline quadrature hybrid coupler splits a 100-GHz input signal into two paths with a 90 relative phase shift. These two paths are split again by a pair of waveguide Y-junctions. The signals from the four outputs of the Y-junctions are tripled in frequency using balanced Schottky diode frequency triplers before being recombined with another pair of Y-junctions. A final waveguide branchline quadrature hybrid coupler completes the combination. Using four chips instead of one enables using four-times higher power input, and produces a nearly four-fold power output as compared to using a single chip. The phase shifts introduced by the quadrature hybrid couplers provide isolation for the input and output waveguides, effectively eliminating standing waves between it and surrounding components. This is accomplished without introducing the high losses and expense of ferrite isolators. A practical use of this technology is to drive local oscillators as was demonstrated around 300 GHz for a heterodyne spectrometer operating in the 2-3-THz band. Heterodyne spectroscopy in this frequency band is especially valuable for astrophysics due to the presence of a very large number of molecular spectral lines. Besides high-resolution radar and spectrographic screening applications, this technology could also be useful for laboratory spectroscopy.

Lin, Robert H.↗
NASA NTRS2010

A Method For The Verification Of Wire Crimp Compression Using Ultrasonic Inspection

The development of a new ultrasonic measurement technique to assess quantitatively wire crimp terminations is discussed. The amplitude change of a compressional ultrasonic wave propagating at right angles to the wire axis and through the junction of a crimp termination is shown to correlate with the results of a destructive pull test, which is a standard for assessing crimp wire junction quality. To demonstrate the technique, the case of incomplete compression of crimped connections is ultrasonically tested, and the results are correlated with pull tests. Results show that the nondestructive ultrasonic measurement technique consistently predicts good crimps when the ultrasonic transmission is above a certain threshold amplitude level. A quantitative measure of the quality of the crimped connection based on the ultrasonic energy transmitted is shown to respond accurately to crimp quality. A wave propagation model, solved by finite element analysis, describes the compressional ultrasonic wave propagation through the junction during the crimping process. This model is in agreement within 6% of the ultrasonic measurements. A prototype instrument for applying this technique while wire crimps are installed is also presented. The instrument is based on a two-jaw type crimp tool suitable for butt-splice type connections. A comparison of the results of two different instruments is presented and shows reproducibility between instruments within a 95% confidence bound.

Cramer, K. E.↗
NASA NTRS2010

Solar cell circuit and method for manufacturing solar cells

The invention is a novel manufacturing method for making multi-junction solar cell circuits that addresses current problems associated with such circuits by allowing the formation of integral diodes in the cells and allows for a large number of circuits to readily be placed on a single silicon wafer substrate. The standard Ge wafer used as the base for multi-junction solar cells is replaced with a thinner layer of Ge or a II-V semiconductor material on a silicon/silicon dioxide substrate. This allows high-voltage cells with multiple multi-junction circuits to be manufactured on a single wafer, resulting in less array assembly mass and simplified power management.

Mardesich, Nick↗
NASA NTRS2010

Suppressing Loss of Ions in an Atomic Clock

An improvement has been made in the design of a compact, highly stable mercury- ion clock to suppress a loss of ions as they are transferred between the quadrupole and higher multipole ion traps. Such clocks are being developed for use aboard spacecraft for navigation and planetary radio science. The modification is also applicable to ion clocks operating on Earth: indeed, the success of the modification has been demonstrated in construction and operation of a terrestrial breadboard prototype of the compact, highly stable mercury-ion clock. Selected aspects of the breadboard prototype at different stages of development were described in previous NASA Tech Briefs articles. The following background information is reviewed from previous articles: In this clock as in some prior ion clocks, mercury ions are shuttled between two ion traps, one a 16- pole linear radio-frequency trap, while the other is a quadrupole radio-frequency trap. In the quadrupole trap, ions are tightly confined and optical state selection from a 202Hg lamp is carried out. In the 16-pole trap, the ions are more loosely confined and atomic transitions are interrogated by use of a microwave beam at approximately 40.507 GHz. The trapping of ions effectively eliminates the frequency pulling that would otherwise be caused by collisions between clock atoms and the wall of a gas cell. The shuttling of the ions between the two traps enables separation of the state-selection process from the clock microwave-resonance process, so that each of these processes can be optimized independently of the other. This is similar to the operation of an atomic beam clock, except that with ions the beam can be halted and reversed as ions are shuttled back and forth between the two traps. When the two traps are driven at the same radio frequency, the strength of confinement can be reduced near the junction between the two traps, depending upon the relative phase of the RF voltage used to operate each of the two traps, and can cause loss of ions during each transit between the traps and thereby cause loss of the 40.507-GHz ion-clock resonance signal. The essence of the modification is to drive the two traps at different frequencies typically between 1.5 and 2 MHz for the quadrupole trap and a frequency a few hundred kHz higher for the 16- pole trap. A frequency difference of a few hundred kHz ensures that the ion motion caused by the trapping electric fields is small relative to the diameter of the traps. Unlike in the case in which both traps are driven at the same frequency, the trapping electric fields near the junction are not zero at all times; instead, the regions of low electric field near the junction open and close at the difference frequency. An additional benefit of making the 16-pole trap operate at higher frequency is that the strength or depth of the multipole trap can be increased independent of the quadrupole ion trap.

Prestage, John↗
NASA NTRS2011

Alpha voltaic batteries and methods thereof

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Raffaelle, Ryne P.↗
NASA NTRS2011

Alpha voltaic batteries and methods thereof

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

Raffaelle, Ryne P.↗
NASA NTRS2006

Carbon-Nanotube Schottky Diodes

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Manohara, Harish↗
NASA NTRS2006

Four-Quadrant Analog Multipliers Using G4-FETs

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Mojarradi, Mohammad↗
NASA NTRS2006

Techniques for Connecting Superconducting Thin Films

Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

Mester, John↗
NASA NTRS2011

Excitation of a Parallel Plate Waveguide by an Array of Rectangular Waveguides

This work addresses the problem of excitation of a parallel plate waveguide by an array of rectangular waveguides that arises in applications such as the continuous transverse stub (CTS) antenna and dual-polarized parabolic cylindrical reflector antennas excited by a scanning line source. In order to design the junction region between the parallel plate waveguide and the linear array of rectangular waveguides, waveguide sizes have to be chosen so that the input match is adequate for the range of scan angles for both polarizations. Electromagnetic wave scattered by the junction of a parallel plate waveguide by an array of rectangular waveguides is analyzed by formulating coupled integral equations for the aperture electric field at the junction. The integral equations are solved by the method of moments. In order to make the computational process efficient and accurate, the method of weighted averaging was used to evaluate rapidly oscillating integrals encountered in the moment matrix. In addition, the real axis spectral integral is evaluated in a deformed contour for speed and accuracy. The MoM results for a large finite array have been validated by comparing its reflection coefficients with corresponding results for an infinite array generated by the commercial finite element code, HFSS. Once the aperture electric field is determined by MoM, the input reflection coefficients at each waveguide port, and coupling for each polarization over the range of useful scan angles, are easily obtained. Results for the input impedance and coupling characteristics for both the vertical and horizontal polarizations are presented over a range of scan angles. It is shown that the scan range is limited to about 35 for both polarizations and therefore the optimum waveguide is a square of size equal to about 0.62 free space wavelength.

Rengarajan, Sembiam↗
NASA NTRS2012

Structural Dynamic Assessment of the GN2 Piping System for NASA's New and Powerful Reverberant Acoustic Test Facility

The National Aeronautics and Space Administration (NASA) Glenn Research Center (GRC) has led the design and build of the new world-class vibroacoustic test capabilities at the NASA GRC's Plum Brook Station in Sandusky, Ohio, USA from 2007 to 2011. SAIC-Benham has completed construction of a new reverberant acoustic test facility to support the future testing needs of NASA's space exploration program and commercial customers. The large Reverberant Acoustic Test Facility (RATF) is approximately 101,000 cubic feet in volume and was designed to operate at a maximum empty chamber acoustic overall sound pressure level (OASPL) of 163 dB. This combination of size and acoustic power is unprecedented amongst the world s known active reverberant acoustic test facilities. Initial checkout acoustic testing was performed on March 2011 by SAIC-Benham at test levels up to 161 dB OASPL. During testing, several branches of the gaseous nitrogen (GN2) piping system, which supply the fluid to the noise generating acoustic modulators, failed at their T-junctions connecting the 12 in. supply line to their respective 4 in. branch lines. The problem was initially detected when the oxygen sensors in the horn room indicated a lower than expected oxygen level from which was inferred GN2 leaks in the piping system. In subsequent follow up inspections, cracks were identified in the failed T-junction connections through non-destructive evaluation testing. Through structural dynamic modeling of the piping system, the root cause of the T-junction connection failures was determined. The structural dynamic assessment identified several possible corrective design improvements to the horn room piping system. The effectiveness of the chosen design repairs were subsequently evaluated in September 2011 during acoustic verification testing to 161 dB OASPL.

McNelis, Mark E.↗
NASA NTRS2012

Analysis of Ares Crew Launch Vehicle Transonic Alternating Flow Phenomenon

A transonic wind tunnel test of the Ares I-X Rigid Buffet Model (RBM) identified a Mach number regime where unusually large buffet loads are present. A subsequent investigation identified the cause of these loads to be an alternating flow phenomenon at the Crew Module-Service Module junction. The conical design of the Ares I-X Crew Module and the cylindrical design of the Service Module exposes the vehicle to unsteady pressure loads due to the sudden transition between a subsonic separated and a supersonic attached flow about the cone-cylinder junction as the local flow randomly fluctuates back and forth between the two flow states. These fluctuations produce a square-wave like pattern in the pressure time histories resulting in large amplitude, impulsive buffet loads. Subsequent testing of the Ares I RBM found much lower buffet loads since the evolved Ares I design includes an ogive fairing that covers the Crew Module-Service Module junction, thereby making the vehicle less susceptible to the onset of alternating flow. An analysis of the alternating flow separation and attachment phenomenon indicates that the phenomenon is most severe at low angles of attack and exacerbated by the presence of vehicle protuberances. A launch vehicle may experience either a single or, at most, a few impulsive loads since it is constantly accelerating during ascent rather than dwelling at constant flow conditions in a wind tunnel. A comparison of a windtunnel- test-data-derived impulsive load to flight-test-data-derived load indicates a significant over-prediction in the magnitude and duration of the buffet load. I. Introduction One

Sekula, Martin K.↗
NASA NTRS2014

Lock-In Imaging System for Detecting Disturbances in Fluid

A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

Park, Yeonjoon↗