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At least 1,207 records · Page 67

Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device efficiency.

36 MATERIALS SCIENCE↗

Plants cope with fluctuating light by frequency‐dependent nonphotochemical quenching and cyclic electron transport

Summary In natural environments, plants are exposed to rapidly changing light. Maintaining photosynthetic efficiency while avoiding photodamage requires equally rapid regulation of photoprotective mechanisms. We asked what the operation frequency range of regulation is in which plants can efficiently respond to varying light. Chlorophyll fluorescence, P700, plastocyanin, and ferredoxin responses of wild‐types Arabidopsis thaliana were measured in oscillating light of various frequencies. We also investigated the npq1 mutant lacking violaxanthin de‐epoxidase, the npq4 mutant lacking PsbS protein, and the mutants crr2‐2 , and pgrl1ab impaired in different pathways of the cyclic electron transport. The fastest was the PsbS‐regulation responding to oscillation periods longer than 10 s. Processes involving violaxanthin de‐epoxidase dampened changes in chlorophyll fluorescence in oscillation periods of 2 min or longer. Knocking out the PGR5/PGRL1 pathway strongly reduced variations of all monitored parameters, probably due to congestion in the electron transport. Incapacitating the NDH‐like pathway only slightly changed the photosynthetic dynamics. Our observations are consistent with the hypothesis that nonphotochemical quenching in slow light oscillations involves violaxanthin de‐epoxidase to produce, presumably, a largely stationary level of zeaxanthin. We interpret the observed dynamics of photosystem I components as being formed in slow light oscillations partially by thylakoid remodeling that modulates the redox rates.

59 BASIC BIOLOGICAL SCIENCES↗

Performance of absorptive liners in the presence of spinning modes.

Results of free field measurements of the absorption coefficient of fiberglass, which indicate that the material has a high coefficient over a broad frequency range with little angular dependence. This material is also a very effective duct liner and attenuates spinning modes more rapidly than plane waves. The resonant absorber tested exhibits a strong angular and frequency dependence of the absorption coefficient, is only a moderately effective duct liner for spinning modes, and produces no measurable attenuation for plane waves.

Mcdaniel, O. H.↗

Acoustical modal analysis of the pressure field in the tailpipe of a turbofan engine

The results of a modal analysis of the pressure field in the tailpipe of a turbofan engine are presented. Modal amplitudes, at the tailpipe inlet and exit, are presented, as a function of frequency, for several operating conditions. The modal amplitudes were obtained using an optimization routine to obtain a best fit between measured cross spectra and an analytical expression for the cross spectra between pressures at circumferentially spaced locations. The measured pressure field was decomposed into a set of five modal amplitudes corresponding to the (0,0), (1,0), (2,0), (3,0), and (4,0) modes. The analysis was limited to frequencies below 1500 Hz where higher order modes are cutoff. The results of the analysis showed that at low frequencies, up to the cuton frequency of the (1,0) mode, the (0,0) mode (plane wave) dominated the pressure field. The frequency range from the cuton of the (1,0) mode to the cuton of the (2,0) mode was dominated by the (1,0) mode. The (2,0) mode dominated from its cuton frequency to the upper limit of the analysis, i.e., 1500 Hz. The contribution of modes other than the dominant mode was usually small.

Krejsa, E. A.↗

Experimental and analytical investigation of dynamic characteristics of extension-twist-coupled composite tubular spars

The results from a study aimed at improving the dynamic and aerodynamic characteristics of composite rotor blades through the use of extension-twist coupling are presented. A set of extension-twist-coupled composite spars was manufactured with four plies of graphite-epoxy cloth prepreg. These spars were noncircular in cross-section design and were therefore subject to warping deformations. Three different cross-sectional geometries were developed: D-shape, square, and flattened ellipse. Three spars of each type were fabricated to assess the degree of repeatability in the manufacturing process of extension-twist-coupled structures. Results from free-free vibration tests of the spars were compared with results from normal modes and frequency analyses of companion shell-finite-element models. Five global modes were identified within the frequency range from 0 to 2000 Hz for each spar. The experimental results for only one D-shape spar could be determined, however, and agreed within 13.8 percent of the analytical results. Frequencies corresponding to the five global modes for the three square spars agreed within 9.5, 11.6, and 8.5 percent of the respective analytical results and for the three elliptical spars agreed within 4.9, 7.7, and 9.6 percent of the respective analytical results.

Lake, Renee C.↗

Planar GaAs diodes for THz frequency mixing applications

Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.

Bishop, William L.↗

Frequency multipliers for millimeter and submillimeter wavelengths

All-solid-state local oscillators in the terahertz frequency range are especially needed for space-borne radio astronomy and remote sensing of the atmosphere. Because solid-state oscillators cannot yet produce the necessary local oscillator power at submillimeter wavelengths, frequency multipliers are needed. So far, submillimeter-wave frequency multipliers are mainly based on a whisker-contacted Schottky diode as the nonlinear element. This paper discusses the multiplier theory and tools for analysis and design of millimeter- and submillimeter-wave multipliers. Experimental work is reviewed. The Schottky diode model at submillimeter frequencies, use of Schottky multiplier chains versus direct higher-order multipliers, and the effect of cooling on Schottky diode multipliers are discussed. Alternative diodes such as the high electron mobility varactor, the barrier-intrinsic n(+) diode, the barrier-n-n(+) diode, the quantum well diode, and the single barrier varactor are discussed, with attention also given to their potential as submillimeter frequency multipliers.

Raisanen, Antti V.↗

A Low-Noise NbTiN Hot Electron Bolometer Mixer

Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.

Tong, C. Edward↗

Magnetic and Electrical Characteristics of Permalloy Thin Tape Bobbin Cores

The core loss, that is, the power loss, of a soft ferromagnetic material is a function of the flux density, frequency, temperature, excitation type (voltage or current), excitation waveform (sine, square, etc.) and lamination or tape thickness. In previously published papers we have reported on the specific core loss and dynamic B-H loop results for several polycrystalline, nanocrystalline, and amorphous soft magnetic materials. In this previous research we investigated the effect of flux density, frequency, temperature, and excitation waveform for voltage excitation on the specific core loss and dynamic B-H loop. In this paper, we will report on an experimental study to investigate the effect of tape thicknesses of 1, 1/2, 1/4, and 1/8-mil Permalloy type magnetic materials on the specific core loss. The test cores were fabricated by winding the thin tapes on ceramic bobbin cores. The specific core loss tests were conducted at room temperature and over the frequency range of 10 kHz to 750 kHz using sine wave voltage excitation. The results of this experimental investigation will be presented primarily in graphical form to show the effect of tape thickness, frequency, and magnetic flux density on the specific core loss. Also, the experimental results when applied to power transformer design will be briefly discussed.

Schwarze, Gene E.↗

Noninductive plasma generation and current drive in the Globus-M spherical tokamak

Experimental results on the generation and maintenance of the toroidal current in the Globus-M spherical tokamak by using waves in the lower hybrid frequency range without applying an inductive vortex electric field are presented. For this purpose, the original ridge guide antennas forming a field distribution similar to that produced by multiwaveguide grills were used. The high-frequency field (900 MHz) was used for both plasma generation and current drive. The magnitude of the generated current reached 21 kA, and its direction depended on the direction of the vertical magnetic field. Analysis of the experimental results indicates that the major fraction of the current is carried by the suprathermal electron beam.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Electrical and structure properties for the alloy system Ce{sub x}La{sub 1−x}O{sub y} nanostructure thin films

Highlights: • Glassy Ce{sub x}La{sub 1−x}O{sub y} nanostructure films were grown on Si(1 0 0) substrate using the sol–gel method. • G{sub p} = ωϵ{sub 0}ϵ′ tan(δ) was calculated at different temperatures. • Electrical and structural the Ce{sub x}La{sub 1−x}O{sub y} samples were studied. • The conductivity-temperature study shows that the compound obeys the Arrhenius law. - Abstract: The Ce{sub x}La{sub 1−x}O{sub y} samples are synthesized, characterized and their electrical properties are reported at different molar ratios in the frequency range of 10{sup −1}–10{sup +5} Hz. Ac conductivity and permittivity data are analyzed by using conductivity formalism. The values of capacitance and tan(δ) were recorded with respect to different frequencies and temperatures. X-ray diffraction (XRD) patterns of the films show that the films posses crystalline phases. Surface morphology of the films is analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The energy dispersive X-ray (EDX) and X-ray photoelectron spectroscopy (XPS) analyses reveal that elemental composition is in right stoichiometry. Electrical characterizations of the Ce{sub x}La{sub 1−x}O{sub y} samples were done by capacitance–voltage (C–V) and current density–voltage (J–V) measurements of MOS structures. Investigation showed high value of k = 44.80 and low leakage current (∼1 × 10{sup −5} A/cm{sup 2}) of the Ce{sub 0.4}La{sub 0.6}O{sub y} film.

36 MATERIALS SCIENCE↗

Single-Barrier-Varactor 200-GHz Tripler

Single-barrier varactor in crossed waveguide serves as experimental frequency-tripling device with output at frequencies ranging from 186 to 207 GHz. Varactor has symmetrical capacitance-vs.-voltage characteristic and antisymmetrical dc current-vs.-voltage characteristic. As result, generates only odd-harmonic currents when radio-frequency voltage applied at zero dc bias.

Choudhury, Debabani↗

Surface Penetrating Radar Simulations for Europa

The space environment above the icy surface of Europa is a source of radio noise in this frequency range from natural sources in the Jovian magnetosphere. The ionospheric and magnetospheric plasma environment of Europa affects propagation of transmitted and return signals between the spacecraft and the solid surface in a frequency-dependent manner. The ultimate resolution of the subsurface sounding measurements will be determined, in part, by a capability to mitigate these effects. We discuss an integrated multi-frequency approach to active radio sounding of the Europa ionospheric and local magnetospheric environments, based on operational experience from the Radio Plasma Imaging @PI) experiment on the IMAGE spacecraft in Earth orbit, in support of the subsurface measurement objectives.

Markus, T.↗

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗

Adaptive Antenna Pattern Notching of Interference in Synthetic Aperture Radar Data Using Digital Beamforming

Radio Frequency Interference (RFI) is a growing problem in Synthetic Aperture Radar (SAR)systems as scientific motivations push the radars to lower frequencies and as more wireless services share the frequency spectrum. New, advanced SAR instruments, such as NASA's EcoSAR, DBSAR and DLR's Tandem-L mission, employ a multichannel architecture capable of Digital Beamforming (DBF). Radars with DBF are capable of notching the antenna pattern in specific directions, which can be utilized to suppress RFI on board or in post-processing. A well-researched beamformer for this purpose is the Minimum Variance Distortionless Response (MVDR) Beamformer. However, the number of interferers that can be removed through notching is limited by the number of receive channels. It is therefore essential to adaptively change the antenna pattern notching throughout the image in time and frequency for the best results with a given number of receive channels. In this paper, we present several methods to achieve this notching by making use of the spatial SAR signal distribution in range time, range frequency, azimuth time and azimuth Doppler that is inherent to the SAR imaging geometry. Because this distribution is time-variable and yet predictable, it can be used to improve the angle of arrival estimation of the RFI and the adaptive notching. The presented methods can be applied to a Digital Beamforming (DBF) SAR signal with multiple channels in elevation and/or in azimuth. Simulations show that the proposed methods increase the ability to notch out-of-swath interference from multiple directions and lessen the impact on in-swath interference. The improvement of the interferometric coherence for a single-pass interferogram acquired by NASA's EcoSAR system (capable of DBF in elevation) is demonstrated. The removal of periodic RFI artifacts is achieved.

RFI↗

Dynamic-mechanical response of graphite/epoxy composite laminates and neat resin

Dynamic mechanical measurement results are presented for the case of carbon fiber-reinforced, epoxy matrix composite laminates subjected to loading perpendicular to the lamination plane, as well as for neat epoxy resin under the same conditions, where temperatures ranged between 20 and 200 C and deformation levels lie within the linear viscoelastic region. In-phase and out-of-phase stiffnesses are found to become superposed, forming master curves that cover a 12-decade frequency range. The application of a master curve scaling procedure shows that the in-phase stiffness has the same shape, and out-of-phase stiffness has the same dispersion, for all laminates irrespective of stacking sequence and are, in turn, nearly identical to those for the neat epoxy resin. An empirical function is found for the relaxation modulus which, when converted to a dynamic modulus, yields good overall agreement for both of the dynamic stiffness components as a function of frequency.

Yang, P.↗

Effect of manganese doping of BaSrTiO{sub 3} on diffusion and domain wall pinning

In the present paper, the influence of manganese doping on the dielectric properties of BaSrTiO{sub 3} thin films is presented. The real and imaginary parts of the material's permittivity have been measured in a large frequency range (100 Hz–1 MHz) and as a function of the electric field. The tunability and the figure of merit of the material have been obtained from the measurement of the permittivity under an applied DC bias electric field. For the undoped material, the dielectric losses become important for a large DC bias which leads to breakdown. At a suitable dopant rate, this effect disappears. In order to better understand the origin of the related phenomena, we measure the permittivity as a function of the AC excitation amplitude and we decompose the obtained permittivity with the hyperbolic law. This enables to extract the different contributions of the bulk (low frequency diffusion and high frequency lattice relaxation) and of the domain wall motions (vibration and pinning/unpinning) to the material's dielectric permittivity and to understand the effect of manganese doping on each contribution. Knowledge of the related mechanisms allows us to establish the optimum dopant rate (mainly conditioned by the lattice contribution) and to reduce the domain wall motion, which finally is beneficial for the desired properties of the ferroelectric thin film. A particular attention is paid to low frequency diffusion, an especially harmful effect when a DC biasing is mandatory (tunable electronic component in mobile telecommunication devices for example)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Characterization of transverse electron pulse trains using RF powered traveling wave metallic comb striplines

Advancements in ultrafast electron microscopy have allowed elucidation of spatially selective structural dynamics. However, as the spatial resolution and imaging capabilities have made progress, quantitative characterization of the electron pulse trains has not been reported at the same rate. In fact, inexperienced users have difficulty replicating the technique because only a few dedicated microscopes have been characterized thoroughly. Systems replacing laser driven photoexcitation with electrically driven deflectors especially suffer from a lack of quantified characterization because of the limited quantity. The primary advantages to electrically driven systems are broader frequency ranges, ease of use and simple synchronization to electrical pumping. Here, we characterize the technical parameters for electrically driven UEM including the shape, size and duration of the electron pulses using low and high frequency chopping methods. At high frequencies, pulses are generated by sweeping the electron beam across a chopping aperture. For low frequencies, the beam is continuously forced off the optic axis by a DC potential, then momentarily aligned by a countering pulse. Using both methods, we present examples that measure probe durations of 2 ns and 10 ps for the low and high frequency techniques, respectively. Here, we also discuss how the implementation of a pulsed probe affects STEM imaging conditions by adjusting the first condenser lens.

36 MATERIALS SCIENCE↗