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Dielectric screening and vacancy formation for large neutral and charged Si n H m ( n > 1500 ) nanocrystals using real-space pseudopotentials
A commonly used procedure for computing the properties of defects in crystalline materials is to consider a large supercell that includes the defect of interest. This is a straightforward technique as standard energy band codes can be used for such computations. For neutral defects, the only impediment of such an approach is to avoid defect-defect interactions between adjoining cells. However, this procedure can be complex if the defect of interest is charged as the system at large contains Coulombic divergences. Moreover, some have recently argued that the conventional definition of formation energies for charged defects cannot be reconciled with statistical mechanics. Here, we focus on an alternative approach. We consider large nanocrystals wherein a charged defect can be placed. Since the system is confined, a charged defect within the nanocrystal does not result in a Coulombic divergence. The chief impediment is computational, i.e., while no defect-defect or Coulombic divergences are present, the nanocrystal must be sufficiently large to allow the system to properly replicate a bulklike configuration. With the development of new algorithms and hardware advances, computations for systems of sufficient size to address this issue are feasible. In particular, we solve the Kohn-Sham equation in real space using pseudopotential-density-functional theory for large silicon nanocrystals, which contain thousands of atoms. Further, we focus on (i) the screening of a point charge and (ii) the formation of a charged vacancy in hydrogen-terminated silicon nanocrystals. This approach allows us to examine the role of quantum confinement in addition to exploring the bulk limit. Comparisons to other methods confirm the viability of this approach.
Probing the electronic properties of gap states near the surface of n -SrTiO 3-δ / i -Si (001) heterojunctions with high sensitivity
We have measured soft x-ray resonant photoemission for the n–SrTiO 3–δ /i–Si(001) (δ=~0.0003) hybrid semiconductor heterojunction with the goal of probing occupied electronic states in the band gap near the surface. By utilizing both swept energy, angle-integrated and fixed-energy, and angle-resolved spectroscopies, we identify the atomic and orbital character of the in-gap state as well as the different electronic phases that contribute to it. Specifically, we isolate the state associated with trapped charge on the n–SrTiO 3–δ surface that causes surface depletion from the localized gap state resulting from electron correlation effects in the complex oxide. Using an x-ray energy close to select dipole allowed TiL 3 → 3d x-ray absorption resonances results in a 40-fold increase in sensitivity. Furthermore, this feature makes photoemission possible when probing electrons from dopants at concentrations as low as a few hundredths of a percent.
Nitro-sonium nitrate (NO[superscript +]NO[subscript 3 superscript -]) structure solution using in si
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Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
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The Role of Water on the Interfacial Adhesion in Si Solar Modules
Delamination of solar module interfaces often occurs in field-tested solar modules after decades of service due to environmental stressors such as humidity. As water diffuses into the module, failure mechanisms like corrosion and delamination are significantly affected. In the presence of water, the interfaces between EVA and the cell, glass, and backsheet all experience losses of adhesion exposing the module to accelerated degradation. Understanding the relation between interfacial adhesion and water content inside PV modules can help mitigate detrimental power losses. Water content measurements via short wave infrared reflectometry combined with 180 degrees peel tests were used to study and quantify the effect of water ingress and egress on adhesion. Changes in adhesion strength for different module interfaces are quantified, correlating spatial distribution of water content to adhesion for damp heat and dry heat exposed samples. After 1000 hours of damp heat exposure, decreases in adhesion strength of approximately 1 N/mm were noted for all interfaces.
Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si
High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.
Recovery of Glass and Silicon Solar Cells from Si-Modules Through Laser Processing
This study demonstrates an innovative and environmentally friendly laser-based approach for the efficient recovery of glass and silicon solar cells, allowing the recycling of photovoltaic modules. The methodology involves the use of a high-power pulsed laser beam focusing at various interfaces within the modules. Specifically, the delivery of ultra-short pulse laser energy at the interfaces of glass and polymeric encapsulants, as well as at the encapsulants and silicon solar cells, facilitates the debonding of polymers from both glass and silicon cell surfaces. The debonding occurs through photothermal, ablation, chemical modification, and localized heat generation. The research successfully demonstrates the recovery of glass from commercial mini solar modules of size 11.5 x 6.8 cm 2 and a silicon wafer of size 3.0x1.6 cm 2 . Ongoing efforts aim to extend the effectiveness of this laser-based methodology to comprehensively recycle larger-size components. This innovative approach holds promise for addressing environmental concerns associated with the disposal of solar modules, contributing to sustainable practices in the renewable energy sector.
Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors
Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.
Properties of SiC-Si made via binder jet 3D printing of SiC powder, carbon addition, and silicon melt infiltration
In this work, we report the physical and mechanical properties of ceramic composite materials fabricated by binder jet 3D printing (BJ3DP) with silicon carbide (SiC) powders, followed by phenolic resin infiltration and pyrolysis (IP) to generate carbon, and a final reactive silicon melt infiltration step. After two phenolic resin infiltration and pyrolysis cycles; porosity was less than 2%, Young's modulus was close to 300 GPa, and the flexural strength was 517.6 ± 24.8 MPa. However, diminishing returns were obtained after more than two phenolic resin infiltration and pyrolysis cycles as surface pores in carbon were closed upon the formation of SiC, resulting in reaction choking and residual-free carbon and porosity. The instantaneous coefficient of thermal expansion of the composite was found to be independent of the number of phenolic IP cycles and had values of between 4.2 and 5.0 ppm/°C between 300 and 100°C, whereas the thermal conductivity was found to have a weak dependence on the number of phenolic IP cycles. While the manufacturing procedures described here yielded highly dense, gas impermeable, siliconized SiC composites with properties comparable to those of bulk siliconized silicon carbide processed according to conventional techniques, BJ3DP enables the manufacture of objects with complex shape, unlike conventional techniques.
Addressing amorphization and transgranular fracture of B 4 C through Si doping and TiB 2 microparticle reinforcing
Over the last two decades, many studies have contributed to improving our understanding of the brittle failure mechanisms of boron carbide and provided a road map for inhibiting the underlying mechanisms and improving the mechanical response of boron carbide. This paper provides a review of the design and processing approaches utilized to address the amorphization and transgranular fracture of boron carbide, which are mainly based on what we have found through 9 years of work in the field of boron carbides as armor ceramics.
Reliability comparisons between additively manufactured and conventional SiC–Si ceramic composites
Abstract An additively manufactured reaction‐bonded silicon carbide ceramic composite is fabricated using a bimodal powder feedstock and the binder‐jetting printing technique. On fabricating, the ceramic is investigated to report its composition, mechanical, and thermal properties at room temperature and high temperatures (up to 750). The ceramic has a density of 2.76 g/cc, and shows a hardness of 21.74 GPa, and a flexure strength of 207.5 MPa at room temperature. The mechanical property of flexure strength is used to estimate its failure probability under applied stress, using a Weibull distribution. The mechanical properties and failure probabilities are compared with those of conventionally fabricated reaction‐bonded silicon carbide ceramics reported in the literature. These ceramics were fabricated using methods such as slip‐casting, compacting, and tape‐casting. The comparison is used to elucidate the advantages and areas of improvement of the present additive manufacturing technique for reaction‐bonded ceramics.
Control-Oriented Modeling of Cycle-to-Cycle Combustion Variability at the Misfire Limit in SI Engines
A control-oriented model is presented that can capture the prior-cycle correlation of combustion cycles during conditions with high levels of exhaust gas recirculation (EGR). Combustion events are modeled in discrete time and the dynamic evolution is captured by the residual air, fuel, and inert gas trapped in the combustion chamber. The mathematical formulation of the model is presented together with the calibration procedure to emulate a particular engine operating condition. A cycle-to-cycle system identification methodology is described which allows regressing model parameters from experimental data. Simulations are presented and compared to real engine measurements to show the modeling potential for analysis and control of combustion events.