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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,207 records · Page 67
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Stable Supercapacity of Binder-Free TiO 2 (B) Epitaxial Electrodes for All-Solid-State Nanobatteries

Owing to its pseudocapacitive, unidimensional, rapid ion channels, TiO 2 (B) is a promising material for application to battery electrodes. In this study, we align these channels by epitaxially growing TiO 2 (B) films with the assistance of an isostructural VO 2 (B) template layer. In a liquid electrolyte, binder-free TiO 2 (B) epitaxial electrodes exhibit a supercapacity near the theoretical value of 335 mA h g –1 and an excellent charge–discharge reproducibility for ≥200 cycles, which outperform those of other TiO 2 (B) nanostructures. For the all-solid-state configuration employing the LiPON solid electrolyte, excellent stability persists. Our findings suggest excellent potential for miniaturizing all-solid-state nanobatteries in self-powered integrated circuits.

25 ENERGY STORAGE↗
DOE OSTI2016

Gigahertz acoustic vibrations of elastically anisotropic Indium–tin-oxide nanorod arrays [Gigahertz modulation of the full visible spectrum via acoustic vibrations of elastically anisotropic Indium-tin-oxide nanorod arrays]

Active control of light is important for photonic integrated circuits, optical switches,. and telecommunications. Coupling light with acoustic vibrations in nanoscale optical resonators offers optical modulation capabilities with high bandwidth and Small footprint Instead of using noble metals, here we introduce indium tin-oxide nanorod arrays (ITO-NRAs) as the operating media;and demonstrate optical modulation covering the visible spectral range (from 360 to 700 nm), with similar to 20 GHz bandwidth through the excitation of coherent acoustic vibrations in ITO-NRAs. This broadband modulation results from the collective optical diffraction by the dielectric ITO-NRAs, and a high differential transmission modulation up to 10% is achieved through efficient near-infrared, on-plasmon-resonance pumping. By combining the frequency signatures Of the vibrational modes with finite-element simulations, we,further determine the anisotropic elastic constants for single-crystalline ITO, which are not known-for the bulk phase. Furthermore, this technique to determine elastic constants using Coherent acoustic vibrations of uniform nanostructures can be generalized to the study of other inorganic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Porous Silicon Gradient Refractive Index Micro-Optics

We see the emergence and growth of transformation optics over the past decade has revitalized interest in how a gradient refractive index (GRIN) can be used to control light propagation. Two-dimensional demonstrations with lithographically defined silicon (Si) have displayed the power of GRIN optics and also represent a promising opportunity for integrating compact optical elements within Si photonic integrated circuits. Here, we demonstrate the fabrication of three-dimensional Si-based GRIN micro-optics through the shape-defined formation of porous Si (PSi). Conventional microfabrication creates Si square microcolumns (SMCs) that can be electrochemically etched into PSi elements with nanoscale porosity along the shape-defined etching pathway, which imparts the geometry with structural birefringence. Free-space characterization of the transmitted intensity distribution through a homogeneously etched PSi SMC exhibits polarization splitting behavior resembling that of dielectric metasurfaces that require considerably more laborious fabrication. Coupled birefringence/GRIN effects are studied by way of PSi SMCs etched with a linear (increasing from edge to center) GRIN profile. The transmitted intensity distribution shows polarization-selective focusing behavior with one polarization focused to a diffraction-limited spot and the orthogonal polarization focused into two laterally displaced foci. Optical thickness-based analysis readily predicts the experimentally observed phenomena, which strongly match finite-element electromagnetic simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Low Contact Barrier in 2H/1T' MoTe 2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe 2 ) planarly contacted by its metallic phase (1T' MoTe 2 ). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe 2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain engineering can modulate the material properties of two-dimensional (2D) sem- iconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS 2 , a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS 2 and MoS 2 transistors. Further, this approach experimentally achieves ~2× higher on-state current and mobility with ~0.3% applied biaxial strain in WS 2 , the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other opto-electronic applications.

2D materials↗
DOE OSTI2024

Unraveling Interdiffusion Phenomena and the Role of Nanoscale Diffusion Barriers in the Copper–Gold System

Diffusion is one of the most fundamental concepts in materials science, playing a pivotal role in materials synthesis, forming, and degradation. Of particular importance is solid state interdiffusion of metals which defines the usable parameter space for material combinations in the form of alloys. This parameter space can be explored on the macroscopic scale by using diffusion couples. However, this method reaches its limit when going to low temperatures, small scales, and when testing ultrathin diffusion barriers. Therefore, this work transfers the principle of the diffusion couples to small scales by using core–shell nanowires and in situ heating. This allows us to delve into the interdiffusion dynamics of copper and gold, revealing the interplay between diffusion and the disorder–order phase transition. Our in situ TEM experiments in combination with chemical mapping reveal the interdiffusion coefficients of Cu and Au at low temperatures and highlight the impact of ordering processes on the diffusion behavior. The formation of ordered domains within the solid-solution is examined using high-resolution imaging and nanodiffraction including strain mapping. In addition, we examine the effectiveness of ultrathin Al 2 O 3 barrier layers to control interdiffusion of the diffusion couple. Our findings indicate that a 5 nm thick layer serves as an efficient diffusion barrier. Furthermore, this research provides valuable insights into the interdiffusion behavior of Cu and Au on the nanoscale, offering potential applications in the development of miniaturized integrated circuits and nanodevices.

alloys↗
DOE OSTI2018

Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry

Three-dimensional thin-film solid-state batteries (3D TSSB) were proposed by Long et al. in 2004 as a structure-based approach to simultaneously increase energy and power densities. Here, we report experimental realization of fully conformal 3D TSSBs, demonstrating the simultaneous power-and-energy benefits of 3D structuring. All active battery components—electrodes, solid electrolyte, and current collectors—were deposited by atomic layer deposition (ALD) onto standard CMOS processable silicon wafers microfabricated to form arrays of deep pores with aspect ratios up to approximately 10. The cells utilize an electrochemically prelithiated LiV 2 O 5 cathode, a very thin (40–100 nm) Li 2 PO 2 N solid electrolyte, and a SnNx anode. The fabrication process occurs entirely at or below 250 °C, promising compatibility with a variety of substrates as well as integrated circuits. The multilayer battery structure enabled all-ALD solid-state cells to deliver 37 μAh/cm 2 ·μm (normalized to cathode thickness) with only 0.02% per-cycle capacity loss. Conformal fabrication of full cells over 3D substrates increased the areal discharge capacity by an order of magnitude while simulteneously improving power performance, a trend consistent with a finite element model. Furthermore, this work shows that the exceptional conformality of ALD, combined with conventional semiconductor fabrication methods, provides an avenue for the successful realization of long-sought 3D TSSBs which provide power performance scaling in regimes inaccessible to planar form factor cells.

25 ENERGY STORAGE↗
DOE OSTI2017

Transient Negative Optical Nonlinearity of Indium Oxide Nanorod Arrays in the Full-Visible Range

Dynamic control of the optical response of materials at visible wavelengths is key to future metamaterials and photonic integrated circuits. Here we demonstrate large amplitude, negative optical nonlinearity (Δ n from -0.05 to -0.09) of indium oxide nanorod arrays in the full-visible range. We experimentally quantify and theoretically calculate the optical nonlinearity, which arises from the modifications of interband optical transitions. Furthermore, the approach towards negative optical nonlinearity can be generalized to other transparent semiconductors and opens door to reconfigurable, sub-wavelength optical components.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Attentional Ptycho-Tomography (APT) for three-dimensional nanoscale X-ray imaging with minimal data acquisition and computation time

Abstract Noninvasive X-ray imaging of nanoscale three-dimensional objects, such as integrated circuits (ICs), generally requires two types of scanning: ptychographic, which is translational and returns estimates of the complex electromagnetic field through the IC; combined with a tomographic scan, which collects these complex field projections from multiple angles. Here, we present Attentional Ptycho-Tomography (APT), an approach to drastically reduce the amount of angular scanning, and thus the total acquisition time. APT is machine learning-based, utilizing axial self-Attention for Ptycho-Tomographic reconstruction. APT is trained to obtain accurate reconstructions of the ICs, despite the incompleteness of the measurements. The training process includes regularizing priors in the form of typical patterns found in IC interiors, and the physics of X-ray propagation through the IC. We show that APT with ×12 reduced angles achieves fidelity comparable to the gold standard Simultaneous Algebraic Reconstruction Technique (SART) with the original set of angles. When using the same set of reduced angles, then APT also outperforms Filtered Back Projection (FBP), Simultaneous Iterative Reconstruction Technique (SIRT) and SART. The time needed to compute the reconstruction is also reduced, because the trained neural network is a forward operation, unlike the iterative nature of these alternatives. Our experiments show that, without loss in quality, for a 4.48 × 93.2 × 3.92 µm 3 IC (≃6 × 10 8 voxels), APT reduces the total data acquisition and computation time from 67.96 h to 38 min. We expect our physics-assisted and attention-utilizing machine learning framework to be applicable to other branches of nanoscale imaging, including materials science and biological imaging.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Deep learning enables nanoscale X-ray 3D imaging with limited data

Deep neural network can greatly improve tomography reconstruction with limited data. A recent effort of combining ptycho-tomography model with the 3D U-net demonstrated a significant reduction in both the number of projections and computation time, and showed its potential for integrated circuit imaging that requires high-resolution and fast measurement speed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

A tabletop X-ray tomography instrument for nanometer-scale imaging: reconstructions

Abstract We show three-dimensional reconstructions of a region of an integrated circuit from a 130 nm copper process. The reconstructions employ x-ray computed tomography, measured with a new and innovative high-magnification x-ray microscope. The instrument uses a focused electron beam to generate x-rays in a 100 nm spot and energy-resolving x-ray detectors that minimize backgrounds and hold promise for the identification of materials within the sample. The x-ray generation target, a layer of platinum, is fabricated on the circuit wafer itself. A region of interest is imaged from a limited range of angles and without physically removing the region from the larger circuit. The reconstruction is consistent with the circuit’s design file.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Deep learning at the edge enables real-time streaming ptychographic imaging

Abstract Coherent imaging techniques provide an unparalleled multi-scale view of materials across scientific and technological fields, from structural materials to quantum devices, from integrated circuits to biological cells. Driven by the construction of brighter sources and high-rate detectors, coherent imaging methods like ptychography are poised to revolutionize nanoscale materials characterization. However, these advancements are accompanied by significant increase in data and compute needs, which precludes real-time imaging, feedback and decision-making capabilities with conventional approaches. Here, we demonstrate a workflow that leverages artificial intelligence at the edge and high-performance computing to enable real-time inversion on X-ray ptychography data streamed directly from a detector at up to 2 kHz. The proposed AI-enabled workflow eliminates the oversampling constraints, allowing low-dose imaging using orders of magnitude less data than required by traditional methods.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Optomechanical ring resonator for efficient microwave-optical frequency conversion

Phonons traveling in solid-state devices are emerging as a universal excitation for coupling different physical systems. Phonons at microwave frequencies have a similar wavelength to optical photons in solids, enabling optomechanical microwave-optical transduction of classical and quantum signals. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), where co-resonant infrared photons and GHz phonons induce significantly enhanced interconversion. The platform is hybrid, using wide bandgap semiconductor gallium phosphide (GaP) for waveguiding and piezoelectric zinc oxide (ZnO) for phonon generation. The OMR features photonic and phononic quality factors of >1 × 10 5 and 3.2 × 10 3 , respectively. The optomechanical interconversion between photonic modes achieved an internal conversion efficiency $η_i$ = (2.1 ± 0.1)% and a total device efficiency $η_{tot}$ = 0.57 x 10 -6 at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for quantum information and microwave photonics applications.

42 ENGINEERING↗
DOE OSTI2025

Single-shot magnon interference in a magnon-superconducting-resonator hybrid circuit

Magnon interference is a hallmark of coherent magnon interactions. In this work, we demonstrate single-shot magnon interference using up to four magnon pulses in two remotely coupled yttrium iron garnet spheres mediated by a coplanar superconducting resonator. By exciting one YIG sphere with injected microwave pulses, we achieve coherent energy exchange between the two spheres, facilitating their interference processes, including Rabi-like oscillation with a single pulse, constructive and destructive interference with two pulses, and interference peak sharpening with up to four pulses—analogous to diffraction grating in optical interference. The resulting interference patterns can be precisely controlled by changing the frequency detuning and time delay of the magnon pulses. The demonstration of time-domain coherent control of remote magnon interference opens new pathways for advancing coherent information processing through multi-operation, circuit-integrated hybrid magnonic networks.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High-fidelity trapped-ion qubit operations with scalable photonic modulators

Abstract Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Light-field control of real and virtual charge carriers

We report light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, but photocurrent generation may stem from real as well as virtual charge carriers. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold–graphene–gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold–graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Searching for metastable particles using graph computing

The reconstruction of charged particle trajectories at the Large Hadron Collider and future colliders relies on energy depositions in sensors placed at distances ranging from a centimeter to a meter from the colliding beams. We propose a method of detecting charged particles that decay invisibly after traversing a short distance of about 25 cm inside the experimental apparatus. One of the decay products may constitute the dark matter known to be 84% of all matter at galactic and cosmological distance scales. Our method uses graph computing to cluster spacepoints recorded by two-dimensional silicon pixel sensors into mathematically-defined patterns. The algorithm may be implemented on silicon-based integrated circuits using field-programmable gate array technology to augment or replace traditional computing platforms.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power devices; however, defects in the substrate growth and manufacturing are preventing vertical devices from performing optimally. This paper explores the application of machine learning techniques utilizing data obtained from optical profilometry as input variables to predict the probability of a wafer meeting performance metrics, specifically the breakdown voltage (V bk ). By incorporating machine learning techniques, it is possible to reliably predict performance metrics that cause devices to fail at low voltage. For diodes that fail at a higher (but still below theoretical) breakdown voltage, alternative inspection methods or a combination of several experimental techniques may be necessary.

42 ENGINEERING↗