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At least 1,207 records · Page 67

Effects of ion and nanosecond-pulsed laser co-irradiation on the surface nanostructure of Au thin films on SiO{sub 2} glass substrates

Ion irradiation and short-pulsed laser irradiation can be used to form nanostructures on the surfaces of substrates. This work investigates the synergistic effects of ion and nanosecond-pulsed laser co-irradiation on surface nanostructuring of Au thin films deposited under vacuum on SiO{sub 2} glass substrates. Gold nanoparticles are randomly formed on the surface of the substrate after nanosecond-pulsed laser irradiation under vacuum at a wavelength of 532 nm with a repetition rate of 10 Hz and laser energy density of 0.124 kJ/m{sup 2}. Gold nanoparticles are also randomly formed on the substrate after 100-keV Ar{sup +} ion irradiation at doses of up to 3.8 × 10{sup 15} ions/cm{sup 2}, and nearly all of these nanoparticles are fully embedded in the substrate. With increasing ion irradiation dose (number of incident laser pulses), the mean diameter of the Au nanoparticles decreases (increases). However, Au nanoparticles are only formed in a periodic surface arrangement after co-irradiation with 6000 laser pulses and 3.8 × 10{sup 15} ions/cm{sup 2}. The periodic distance is ∼540 nm, which is close to the wavelength of the nanosecond-pulsed laser, and the mean diameter of the Au nanoparticles remains at ∼20 nm with a relatively narrow distribution. The photoabsorption peaks of the ion- or nanosecond-pulsed laser-irradiated samples clearly correspond to the mean diameter of Au nanoparticles. Conversely, the photoabsorption peaks for the co-irradiated samples do not depend on the mean nanoparticle diameter. This lack of dependence is likely caused by the periodic nanostructure formed on the surface by the synergistic effects of co-irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility of exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Freestanding single-crystalline magnetic structures fabricated by ion bombardment

Starting from an ultrathin Fe film grown epitaxially on top of a GaAs(001) substrate, we show that freestanding structures can be created by ion-beam treatment. These structures are single-crystalline blisters and only a few nanometers thick. Anisotropic stress in the rim of a blister induces magnetic domain states magnetized in the direction normal to the blister edge. Experimental evidence is provided that the lateral size can be confined by starting from a nanostructured template.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Néel walls between tailored parallel-stripe domains in IrMn/CoFe exchange bias layers

Tailored parallel-stripe magnetic domains with antiparallel magnetizations in adjacent domains along the long stripe axis have been fabricated in an IrMn/CoFe Exchange Bias thin film system by 10 keV He{sup +}-ion bombardment induced magnetic patterning. Domain walls between these domains are of Néel type and asymmetric as they separate domains of different anisotropies. X-ray magnetic circular dichroism asymmetry images were obtained by x-ray photoelectron emission microscopy at the Co/Fe L{sub 3} edges at the synchrotron radiation source BESSY II. They revealed Néel-wall tail widths of 1 μm in agreement with the results of a model that was modified in order to describe such walls. Similarly obtained domain core widths show a discrepancy to values estimated from the model, but could be explained by experimental broadening. The rotation senses in adjacent walls were determined, yielding unwinding domain walls with non-interacting walls in this layer system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optical studies of ion-beam synthesized metal alloy nanoparticles

Au{sub x}Ag{sub 1-x} alloy nanoparticles with tunable surface plasmon resonance (SPR) have been synthesized on a silica glass substrate. A small Au foil on an Ag foil is irradiated as target substrates such that ion beam falls on both Ag foil and Au foils. Silica slides are kept at an angle ∼45° with respect to the metallic foils. While irradiating the metallic foils with 100 keV Ar{sup +} ions, sputtered Au and Ag atoms get deposited on the silica-glass. In this configuration the foils have been irradiated by Ar{sup +} ions to various fluences at room temperature and the sputtered species are collected on silica slides. Formation of Au{sub x}Ag{sub 1-x} nanoparticles has been confirmed from the optical absorption measurements. With respect to the exposure area of Au and Ag foils to the ion beam, the SPR peak position varies from 450 to 500 nm. Green photoluminescence has been observed from these alloy metal nanoparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Void-interface wetting to crossing transition owing to bubble to void transformation

Understanding cavity-interface interaction is crucial in designing high-strength, radiation-tolerant nanocomposites. In this work, bubbles near the Cu–Nb interface in Nb could be absorbed by Cu voids wetting the interface due to the high system energy difference produced by the huge pressure difference between the bubbles and voids and high mobility of bubbles, and no bubble-denuded zone forms owing to fast Brownian motion of bubbles, which keeps bubbles distributed homogeneously. However, owing to the low system energy difference generated by the low internal pressure difference and low mobility, voids near the Cu–Nb interface in Nb would simply coalesce with Cu voids wetting the interface, leading to the void-interface wetting to crossing transition and the formation of void-denuded zones due to the negligible migration of internal Nb voids.

36 MATERIALS SCIENCE↗

Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHI preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi 1D registers with average qubit spacing of a few nm and of order 100 color centers per micron along 10 to 30 micron long percolation chains.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Studying single-electron traps in newly fabricated Skipper-CCDs for the Oscura experiment using the pocket-pumping technique

Understanding and characterizing very low-energy (⁠ ∼eV) background sources is a must in rare-event searches. Oscura, an experiment aiming to probe electron recoils from sub-GeV dark matter using a 10 kg skipper-CCD detector, has recently fabricated its first two batches of sensors. In this work, we present the characterization of defects/contaminants identified in the buried-channel region of these newly fabricated skipper-CCDs. These defects/contaminants produce deferred charge from trap emission in the images next to particle tracks, which can be spatially resolved due to the sub-electron resolution achieved with these sensors. Using the trap-pumping technique, we measured the energy and cross section associated with these traps in three Oscura prototype sensors from different fabrication batches which underwent different gettering methods during fabrication. Results suggest that the type of defects/contaminants is more closely linked to the fabrication batch rather than to the gettering method used. The exposure-dependent single-electron rate (SER) of one of these sensors was measured ∼100 m underground, yielding (1.8±0.3)×10−3e−/pix/day at 131 K. The impact of the identified traps on the measured exposure-dependent SER is evaluated via a Monte Carlo simulation. Results suggest that the exposure-dependent SER of Oscura prototype sensors would be lower in lower background environments as expected.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Optimal periodic frequency combs for high-efficiency optical quantum memory based on rare-earth ion crystals

The possibility of enhancing the quantum efficiency of photon echo broadband quantum memory in rare-earth-ion-doped crystals with a frequency comb structure of optical transition inhomogeneous broadening is studied. We have found the optimal parameters of the frequency combs for implementing the pre-assigned quantum efficiency in the chosen spectral range of the optical transitions of rare-earth ions with real parameters. The obtained results allow the conditions to be formulated for increasing the efficiency of broadband quantum memory. The possibilities of experimental implementation of such memory are also discussed. (paper)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Beam-contamination-induced compositional alteration and its neutron-atypical consequences in ion simulation of neutron-induced void swelling

Although accelerator-based ion irradiation has been widely accepted to simulate neutron damage, neutron-atypical features need to be carefully investigated. In this study, we have shown that Coulomb force drag by ion beams can introduce significant amounts of carbon, nitrogen, and oxygen into target materials even under ultra-high vacuum conditions. The resulting compositional and microstructural changes dramatically suppress void swelling. By applying a beam-filtering technique, introduction of vacuum contaminants is greatly minimized and the true swelling resistance of the alloys is revealed and matches neutron behavior closely. These findings are a significant step toward developing standardized procedures for emulating neutron damage.

36 MATERIALS SCIENCE↗

Experimental studies on the formation of D{sub 2}O and D{sub 2}O{sub 2} by implantation of energetic D{sup +} ions into oxygen ices

The formation of water (H{sub 2}O) in the interstellar medium is intrinsically linked to grain-surface chemistry; thought to involve reactions between atomic (or molecular) hydrogen with atomic oxygen (O), molecular oxygen (O{sub 2}), and ozone (O{sub 3}). Laboratory precedent suggests that H{sub 2}O is produced efficiently when O{sub 2} ices are exposed to H atoms (∼100 K). This leads to the sequential generation of the hydroxyperoxyl radical (HO{sub 2}), then hydrogen peroxide (H{sub 2}O{sub 2}), and finally H{sub 2}O and a hydroxyl radical (OH); despite a barrier of ∼2300 K for the last step. Recent detection of the four involved species toward ρ Oph A supports this general scenario; however, the precise formation mechanism remains undetermined. Here, solid O{sub 2} ice held at 12 K is exposed to a monoenergetic beam of 5 keV D{sup +} ions. Products formed during the irradiation period are monitored through FTIR spectroscopy. O{sub 3} is observed through seven archetypal absorptions. Three additional bands found at 2583, 2707, and 1195 cm {sup –1} correspond to matrix isolated DO{sub 2} (ν{sub 1}) and D{sub 2}O{sub 2} (ν{sub 1}, ν{sub 5}), and D{sub 2}O (ν{sub 2}), respectively. During subsequent warming, the O{sub 2} ice sublimates, revealing a broad band at 2472 cm{sup –1} characteristic of amorphous D{sub 2}O (ν{sub 1}, ν{sub 3}). Sublimating D{sub 2}, D{sub 2}O, D{sub 2}O{sub 2}, and O{sub 3} products were confirmed through their subsequent detection via quadrupole mass spectrometry. Reaction schemes based on both thermally accessible and suprathermally induced chemistries were developed to fit the observed temporal profiles are used to elucidate possible reaction pathways for the formation of D{sub 2}-water. Several alternative schemes to the hydrogenation pathway (O{sub 2}→HO{sub 2}→H{sub 2}O{sub 2}→H{sub 2}O) were identified; their astrophysical implications are briefly discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Implantation of energetic D{sup +} ions into carbon dioxide ices and implications for our solar system: formation of D{sub 2}O and D{sub 2}CO{sub 3}

Carbon dioxide (CO{sub 2}) ices were irradiated with energetic D{sup +} ions to simulate the exposure of oxygen-bearing solar system ices to energetic protons from the solar wind and magnetospheric sources. The formation of species was observed online and in situ by exploiting FTIR spectroscopy. Molecular products include ozone (O{sub 3}), carbon oxides (CO{sub 3}(C {sub 2v}, D {sub 3h}), CO{sub 4}, CO{sub 5}, CO{sub 6}), D2-water (D{sub 2}O), and D2-carbonic acid (D{sub 2}CO{sub 3}). Species released into the gas phase were sampled via a quadrupole mass spectrometer, and possible minor contributions from D2-formaldehyde (D{sub 2}CO), D4-methanol (CD{sub 3}OD), and D2-formic acid (DCOOD) were additionally identified. The feasibility of several reaction networks was investigated by determining their ability to fit the observed temporal column densities of 10 key species that were quantified during the irradiation period. Directly relevant to the CO{sub 2}-bearing ices of comets, icy satellites in the outer solar system, and the ice caps on Mars, this work illustrates for the first time that D2-water is formed as a product of the exposure of CO{sub 2} ices to D{sup +} ions. These findings provide strong support for water formation from oxygen-bearing materials via non-thermal hydrogen atoms, and predict reaction pathways that are likely to be unfolding on the surfaces of asteroids and the Moon.

79 ASTRONOMY AND ASTROPHYSICS↗

Relationship between atomic and electronic structure in Ln-bearing oxides

Metastable states of matter are of great interest as they offer the promise of novel functionality. They are often a natural consequence of exposure to nonequilibrium environments. In oxides, metastability can take the form of new polymorphs, chemical disorder, and even amorphization. While significant attention has been given to the impact those changes have on the atomic properties of the material, the corresponding changes in the electronic structure have received less attention. Here, using density functional theory, we consider how the electronic structure varies with potential metastable structures in two classes of lanthanide-bearing oxides—pyrochlores and interlanthanide sesquioxides. We find that the changes depend strongly on both the crystal structure and crystal chemistry of the compound with, for example, disordering and amorphization either increasing or decreasing the bandgap depending on the chemistry. For the 𝐴 2 ⁢𝐵 2 ⁢O 7 pyrochlores, we find different dependencies of the bandgap on the 𝐴 = 𝐿⁢𝑛 cations as the 𝐵 cation is changed, which we relate to the nature of the density of states at the conduction band minimum for different 𝐵 chemistries. Our calculations are validated by electron energy loss spectroscopy measurements for two pyrochlore compounds in which amorphization does reduce the bandgap, consistent with our calculations on these two compounds. In conclusion, our results highlight the relationship between atomic and electronic structure and how radiation can be used to modify and potentially control the electronic properties of oxides.

36 MATERIALS SCIENCE↗

Effect of localization on photoluminescence and zero-field splitting of silicon color centers

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here, in this work, we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, band structures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is linearly interpolated from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the D zz component of the zero-field-splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect, which sheds light on its potential application as a spin-photon interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

β decay of He 6 into the α + d continuum

Here, the rare β-decay channel of 6 He into the α+d continuum was investigated at the REX-ISOLDE facility. Bunches of postaccelerated 6 He ions were implanted into the optical time projection chamber (OTPC), where the decays with emission of charged particles were recorded. This novel technique allowed us to extend the low-energy end of the spectrum down to 150 keV in α+d center of mass, corresponding to a deuteron energy of 100 keV. The branching ratio for this process amounts to [2.78±0.07(stat)±0.17(sys)]×10 –6 . The shape of the spectrum is found to be in a good agreement with a three-body model, while the total intensity is about 20% larger than the predicted one.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗